TDSO316 [TEMIC]
13 mm Seven Segment Display; 13毫米七段显示器
| 型号： | TDSO316 |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | 13 mm Seven Segment Display |
| 文件： | 总9页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TDS.51..
TELEFUNKEN Semiconductors
13 mm Seven Segment Display
Color
Type
Circuitry
TDSR515.
TDSR516.
TDSO515.
TDSO516.
TDSY515.
TDSY516.
TDSG515.
TDSG516.
Common anode
Common cathode
Common anode
Common cathode
Common anode
Common cathode
Common anode
Common cathode
Red
Orange red
Yellow
Green
Description
The TDS.51.. series are 13 mm character seven segment
LED displays in a very compact package.
The displays are designed for a viewing distance up to 7
meters and available in four bright colors. The grey pack-
age surface and the evenly lighted untinted segments
provide an optimum on-off contrast.
All displays are categorized in luminous intensity groups.
That allows users to assemble displays with uniform ap-
pearence.
Typical applications include instruments, panel meters,
point-of-sale terminals and household equipment.
96 11508
Features
Evenly lighted segments
Grey package surface
Untinted segments
Luminous intensity categorized
Yellow and green categorized for color
Wide viewing angle
Suitable for DC and high peak current
Applications
Panel meters
Test- and measure- equipment
Point-of-sale terminals
Control units
TV sets
Rev. A1: 01.06.1995
1 (9)
TDS.51..
TELEFUNKEN Semiconductors
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
TDSR515. /TDSR516. , TDSO515. /TDSO516. , TDSY515. /TDSY516. , TDSG515. /TDSG516.
Parameter
Reverse voltage per segment or DP
DC forward current
per segment or DP
Test Conditions
Type
Symbol
Value
6
35
25
25
25
0.5
0.15
0.15
0.15
550
Unit
V
V
R
TDSR315./316.
TDSO315./316.
TDSY315./316.
TDSG315./316.
TDSR315./316.
TDSO315./316.
TDSY315./316.
TDSG315./316.
I
I
I
I
mA
mA
mA
mA
A
A
A
A
mW
C
F
F
F
F
Surge forward current
per segment or DP
t ≤ 10 s
(non repetitive)
I
I
I
I
p
FSM
FSM
FSM
FSM
Power dissipation
Junction temperature
T
≤ 45 C
P
V
amb
T
100
j
Operating temperature range
Storage temperature range
Soldering temperature
T
T
T
–40 to + 85
–40 to + 85
260
C
C
C
amb
stg
t ≤ 3 sec, 2mm be-
sd
low seating plane
Thermal resistance LED junction/
ambient
R
thJA
100
K/W
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Red (TDSR515. , TDSR516. )
Parameter
Test Condi-
tions
I = 10 mA TDSR5150/5160
F
Type
Symbol Min
Typ
Max
Unit
cd
Luminous intensity per segment
I
280
V
1)
(digit average)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per segment or DP I = 20 mA
Reverse voltage per segment or DP I = 10 A
I = 10 mA
655
660
±50
1.6
15
nm
nm
deg
V
F
d
p
I = 10 mA
F
I = 10 mA
F
ϕ
V
F
2
F
V
R
6
V
R
1)
I
and I groups are mean values of segments a to g
V
Vmin
2 (9)
Rev. A1: 01.06.1995
TDS.51..
TELEFUNKEN Semiconductors
Orange red (TDSO515. , TDSO516. )
Parameter
Test Condi-
tions
I = 10 mA TDSO5150/5160
F
Type
Symbol Min
Typ
Max
Unit
cd
Luminous intensity per segment
I
700
612
V
1)
(digit average)
Dominant wavelength
Peak wavelength
Angle of half intensity
I = 10 mA
625
3
nm
nm
deg
V
F
d
p
I = 10 mA
630
±50
2
F
I = 10 mA
F
ϕ
Forward voltage per segment or DP I = 20 mA
V
F
F
Reverse voltage per segment or DP I = 10 A
V
R
6
15
V
R
1)
I
and I groups are mean values of segments a to g
V
Vmin
Yellow (TDSY515. , TDSY516. )
Parameter
Test Condi-
tions
I = 10 mA TDSY5150/5160
F
Type
Symbol Min
Typ
Max
Unit
cd
Luminous intensity per segment
I
700
581
V
1)
(digit average)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per segment or DP I = 20 mA
Reverse voltage per segment or DP I = 10 A
I = 10 mA
594
3
nm
nm
deg
V
F
d
p
I = 10 mA
585
±50
2.4
15
F
I = 10 mA
F
ϕ
V
F
F
V
R
6
V
R
1)
I
and I groups are mean values of segments a to g
V
Vmin
Green (TDSG515. , TDSG516. )
Parameter
Test Condi-
tions
I = 10 mA TDSG5150/5160
F
Type
Symbol Min
Typ
Max
Unit
cd
Luminous intensity per segment
I
700
562
V
1)
(digit average)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per segment or DP I = 20 mA
Reverse voltage per segment or DP I = 10 A
I = 10 mA
575
3
nm
nm
deg
V
F
d
p
I = 10 mA
565
±50
2.4
15
F
I = 10 mA
F
ϕ
V
F
F
V
R
6
V
R
1)
I
and I groups are mean values of segments a to g
V
Vmin
Rev. A1: 01.06.1995
3 (9)
TDS.51..
TELEFUNKEN Semiconductors
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
1000
800
1000
100
10
Red
600
400
200
0
1
t /T=0.001
t =10 s
p
p
0.1
100
3
0
20
40
60
80
1
1.5
2
2.5
95 11481
T
amb
– Ambient Temperature ( °C )
95 10073
V – Forward Voltage ( V )
F
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
60
50
1.6
Red
1.2
0.8
0.4
40
Red
30
20
10
0
I =10mA
F
0
100
100
0
20
40
60
80
0
20
40
60
80
95 11482
T
amb
– Ambient Temperature ( °C )
95 10074
T
amb
– Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
0°
10
°
20
°
2.4
30°
40°
Red
2.0
1.6
1.2
0.8
0.4
1.0
0.9
50°
60°
0.8
0.7
70°
80°
I =10mA, const.
FAV
0
0.6
I (mA)
0.6
0.4
0.2
0
0.2
0.4
10
1
20
0.5
50
100 200
0.05
500
F
95 10082
95 10075
t /T
p
0.2 0.1
0.02
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
4 (9)
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Rev. A1: 01.06.1995
TDS.51..
TELEFUNKEN Semiconductors
10
1.6
1.2
0.8
0.4
0
Orange-Red
Red
1
0.1
I =10mA
F
0.01
100
100
1
10
0
20
40
60
80
95 10076
I
– Forward Current ( mA )
95 10087
T
amb
– Ambient Temperature ( °C )
F
Figure 7. Relative Luminous Intensity vs. Forward Current
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
1.2
2.4
Red
1.0
Orange-Red
2.0
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.4
I =10mA, const.
FAV
0
0
720
I (mA)
620
640
660
680
700
10
1
20
0.5
50
100 200
0.05
500
F
95 10077
– Wavelength ( nm )
95 10088
t /T
p
0.2 0.1
0.02
Figure 8. Relative Luminous Intensity vs. Wavelength
Figure 11. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10
1000
Orange-Red
Orange-Red
1
100
10
1
0.1
t /T=0.001
p
t =10 s
p
0.1
0.01
10
100
0
2
4
6
8
1
10
95 10086
V
– Forward Voltage ( V )
95 10089
I
– Forward Current ( mA )
F
F
Figure 9. Forward Current vs. Forward Voltage
Figure 12. Relative Luminous Intensity vs. Forward Current
Rev. A1: 01.06.1995
5 (9)
TDS.51..
TELEFUNKEN Semiconductors
1.2
2.4
2.0
1.6
1.2
0.8
0.4
0
Orange-Red
1.0
Yellow
0.8
0.6
0.4
0.2
0
690
I (mA)
590
610
630
650
670
10
1
20
50
100 200
0.05
500
F
95 10090
– Wavelength ( nm )
95 10260
t /T
p
0.5
0.2 0.1
0.02
Figure 13. Relative Luminous Intensity vs. Wavelength
1000
Figure 16. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10
Yellow
100
Yellow
1
t /T=0.001
p
t =10 s
p
10
1
0.1
0.1
0.01
10
100
0
2
4
6
8
1
10
95 10030
V
– Forward Voltage ( V )
95 10033
I
– Forward Current ( mA )
F
F
Figure 14. Forward Current vs. Forward Voltage
Figure 17. Relative Luminous Intensity vs. Forward Current
1.6
1.2
Yellow
Yellow
1.0
1.2
0.8
0.4
0.8
0.6
0.4
0.2
0
I =10mA
F
0
100
650
0
20
40
60
80
550
570
590
610
630
95 10031
T
amb
– Ambient Temperature ( °C )
95 10039
– Wavelength ( nm )
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
Figure 18. Relative Luminous Intensity vs. Wavelength
6 (9)
Rev. A1: 01.06.1995
TDS.51..
TELEFUNKEN Semiconductors
1000
10
1
Green
100
Green
10
t /T=0.001
t =10 s
p
p
0.1
0.01
1
0.1
10
100
0
2
4
6
8
1
10
I – Forward Current ( mA )
F
95 10034
V
– Forward Voltage ( V )
95 10037
F
Figure 22. Relative Luminous Intensity vs. Forward Current
Figure 19. Forward Current vs. Forward Voltage
1.2
1.6
Green
Green
1.0
1.2
0.8
0.4
0.8
0.6
0.4
0.2
I =10mA
F
0
0
620
100
520
540
560
580
600
0
20
40
60
80
95 10038
– Wavelength ( nm )
95 10035
T
amb
– Ambient Temperature ( °C )
Figure 23. Relative Luminous Intensity vs. Wavelength
Figure 20. Rel. Luminous Intensity vs. Ambient Temperature
2.4
Green
2.0
1.6
1.2
0.8
0.4
0
I (mA)
10
1
20
50
100 200
0.05
500
F
95 10263
t /T
p
0.5
0.2 0.1
0.02
Figure 21. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Rev. A1: 01.06.1995
7 (9)
TDS.51..
TELEFUNKEN Semiconductors
Dimensions in mm
95 11344
Pin connections
10
9
8
7
6
1
2
3
4
5
6
7
8
9
10
e
d
a
A (K)
c
DP
b
f
b
g
a
A (K)
f
g
e
c
DP
5
d
95 10896
1
2
3
4
8 (9)
Rev. A1: 01.06.1995
TDS.51..
TELEFUNKEN Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Rev. A1: 01.06.1995
9 (9)
相关型号：
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