ND2020LTR [TEMIC]
Small Signal Field-Effect Transistor, 0.132A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,;
| 型号： | ND2020LTR |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Small Signal Field-Effect Transistor, 0.132A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, 晶体 晶体管 |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ND2012L/2020L
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
V(BR)DSV Min (V) rDS(on) Max (W)
VGS(off) (V)
ID (A)
ND2012L
ND2020L
12
20
–1.5 to –4
0.16
200
–0.5 to –2.5
0.132
Features
Benefits
Applications
D High Breakdown Voltage: 220 V
D Full-Voltage Operation
D Normally “On” Switching Circuits
D Current Sources/Limiters
D Power Supply, Converter Circuits
D Solid-State Relays
D Normally “On” Low rDS Switch: 9 W D Low Offset Voltage
D Low Input and Output Leakage
D Low-Power Drive Requirement
D Low Input Capacitance
D Low Error Voltage
D Easily Driven Without Buffer
D High-Speed Switching
D Telecom Switches
TO-226AA
(TO-92)
1
S
G
D
2
3
Top View
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
ND2012L
Unit
ND2020L
Drain-Source Voltage
Gate-Source Voltage
V
V
200
"30
0.16
0.1
200
"30
0.132
0.083
0.8
DS
GS
V
T = 25_C
A
Continuous Drain Current (T = 150_C)
I
J
D
T = 100_C
A
A
a
Pulsed Drain Current
I
DM
0.8
T = 25_C
0.8
0.8
A
Power Dissipation
P
W
D
T = 100_C
A
0.32
156
0.32
156
Maximum Junction-to-Ambient
R
thJA
_C/W
_C
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
stg
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197.
Applications information may also be obtained via FaxBack, request document #70612.
Siliconix
1
S-52426—Rev. C, 14-Apr-97
ND2012L/2020L
Specificationsa
Limits
ND2012L
ND2020L
Parameter
Symbol
Test Conditions
Typb Min Max Min Max Unit
Static
V
V
= –8 V, I = 10 mA
220
220
200
GS
GS
D
Drain-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Gate-Body Leakage
V
(BR)DSV
V
= –5 V, I = 10 mA
200
D
V
V
= 5 V, I = 10 mA
–1.5
–4
"10
"50
1
–0.5
–2.5
"10
"50
GS(off)
DS
D
V
= 0 V, V = "20 V
GS
DS
DS
DS
I
nA
GSS
T = 125_C
J
V
V
= 160 V, V = –8 V
GS
T = 125_C
200
J
Drain Cutoff Current
I
A
D(off)
= 160 V, V = –5 V
1
GS
T = 125_C
200
J
c
Drain-Saturation Current
I
V
= 10 V, V = 0 V
300
7
30
30
mA
DSS
DS
GS
GS
GS
V
V
= 2 V, I = 20 mA
D
c
= 0 V, I = 20 mA
8
12
30
20
50
Drain-Source On-Resistance
r
W
D
DS(on)
T = 125_C
12.6
55
75
J
c
Forward Transconductance
g
mS
fs
V
= 7.5 V, I = 20 mA
D
DS
c
Common Source Output Conductance
g
mS
os
Dynamic
Input Capacitance
C
C
35
10
2
100
20
5
100
20
5
iss
Output Capacitance
V
= 25 V, V = –5 V, f = 1 MHz
pF
oss
DS
GS
Reverse Transfer Capacitance
C
rss
Switchingd
t
20
20
10
10
d(on)
Turn-On Time
V
=25
V, =R 12W50
L
t
r
DD
I
^ 20 mA,V= --
ns
D
GEN
= W25
t
R
G
d(off)
Turn-Off Time
Notes
t
f
a.
T
A
= 25_C unless otherwise noted.
VDDQ20
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
2
Siliconix
S-52426—Rev. C, 14-Apr-97
ND2012L/2020L
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics (ND2012)
Output Characteristics (ND2020)
100
100
80
60
40
20
0
–0.5 V
0 V
0 V
V
= 2 V
0.2 V
–0.2 V
GS
–1 V
V
= 5 V
GS
–0.4 V
80
60
40
20
0
–1.5 V
–0.6 V
–0.8 V
–1.4 V
1.2
–1 V
–2 V
–2.5 V
1.6
–1.2 V
0
0.4
0.8
1.2
2
0
0.4
0.8
1.6
2
V
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
DS
Transfer Characteristics (ND2012)
Transfer Characteristics (ND2020)
500
200
160
120
80
T
C
= –55_C
V
= 10 V
V
= 10 V
DS
DS
400
300
200
100
0
25_C
125_C
T
25_C
= 125_C
C
40
–55_C
0
–4.5
–3.5
–2.5
–1.5
–0.5
0.5
–4.5
–3.5
–2.5
–1.5
–0.5
0.5
V
– Gate-Source Voltage (V)
V
– Gate-Source Voltage (V)
GS
GS
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. DrainCurrent
25
1000
25
V
= 0 V
GS
r
I
@ I = 20 mA, V = 0 V
D GS
DS
@ V = 7.5 V, V = 0 V
DSS
DS
GS
20
15
10
5
800
600
400
200
0
20
15
10
5
r
DS(on)
ND2020
I
DSS
ND2012
0
0
0
–1
–2
–3
–4
–5
10
100
I – Drain Current (mA)
D
1 K
V
– Gate-Source Cutoff Voltage (V)
GS(off)
Siliconix
S-52426—Rev. C, 14-Apr-97
3
ND2012L/2020L
Typical Characteristics (25_C Unless Otherwise Noted) (Cont’d)
Forward Transconductance and Output
Conductance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
350
300
250
200
150
100
50
700
600
500
400
2.25
2.00
1.75
1.50
1.25
1.00
0.75
V
= 7.5 V
DS
V
= 0 V
= 20 mA
GS
Pulse Test
80 ms, 1% Duty Cycle
I
D
300
200
100
0
g
fs
g
os
0
0.50
–50
–10
30
70
110
150
1
10
I – Drain Current (A)
D
100
1 K
T
J
– Junction Temperature (_C)
Capacitance
Load Condition Effects on Switching
120
100
80
60
40
20
0
100
10
1
V
V
R
= 25 V
= 0 to –5 V
= 25 W
DD
GS
t
d(on)
V
= –5 V
GS
f = 1 MHz
G
t
t
f
t
d(off)
r
Ciss
Coss
Crss
0
10
20
30
40
50
1
10
– Drain Current (A)
100
V
– Drain-to-Source Voltage (V)
I
D
DS
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.05
0.02
P
0.1
DM
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.01
2. Per Unit Base = R
= 156_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
0.01
0.1
1
10
100
1 K
10 K
t – Square Wave Pulse Duration (sec)
1
4
Siliconix
S-52426—Rev. C, 14-Apr-97
相关型号：
©2020 ICPDF网 联系我们和版权申明