DG541DY [TEMIC]
Wideband/Video “T” Switches; 宽带/视频“ T”开关
| 型号： | DG541DY |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Wideband/Video “T” Switches |
| 文件： | 总10页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG540/541/542
Wideband/Video “T” Switches
Features
Benefits
Applications
D Wide Bandwidth: 500 MHz
D Flat Frequency Response
D RF and Video Switching
D Low Crosstalk: –85 dB
D High Color Fidelity
D RGB Switching
D High Off-Isolation: –80 dB @ 5 MHz D Low Insertion Loss
D Local and Wide Area Networks
D Video Routing
D “T” Switch Configuration
D TTL Logic Compatible
D Fast Switching—tON: 45 ns
D Low rDS(on): 30 W
D Improved System Performance
D Reduced Board Space
D Fast Data Acquisition
D ATE
D Reduced Power Consumption
D Improved Data Throughput
D Radar/FLR Systems
D Video Multiplexing
Description
The DG540/541/542 are high performance monolithic To achieve TTL compatibility, low channel capacitances
wideband/video switches designed for switching RF, video and fast switching times, the DG540 family is built on the
and digital signals. By utilizing a “T” switch configuration Siliconix proprietary D/CMOS process. Each switch
on each channel, these devices achieve exceptionally low conducts equally well in both directions when on.
crosstalk and high off-isolation. The crosstalk and
off-isolation of the DG540 are further improved by the
introduction of extra GND pins between signal pins.
Functional Block Diagrams and Pin Configurations
DG540
Dual-In-Line
DG540
PLCC
IN
D
IN
D
1
2
20
19
18
17
16
15
14
13
12
11
1
1
2
2
3
2
1 20 19
Truth Table
GND
GND
3
Logic
Switch
4
5
6
7
8
18
17
16
15
14
S
GND
1
S
S
2
4
1
V–
S
2
0
1
OFF
ON
V–
V+
5
GND
V+
GND
GND
6
S
4
GND
Logic “0” v 0.8 V
Logic “1” w 2 V
GND
S
3
S
S
3
7
4
GND
GND
8
9
10 11 12 13
Top View
D
D
9
4
3
IN
IN
10
4
3
Top View
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70055.
Siliconix
1
S-53694—Rev. E, 28-May-97
DG540/541/542
Functional Block Diagrams and Pin Configurations (Cont’d)
DG541
DualĆInĆLine and SOIC
DG542
Dual-In-Line and SOIC
IN
D
IN
2
1
1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
IN
D
S
IN
2
1
1
1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
D
2
D
2
GND
GND
S
2
S
S
2
1
V–
V+
V–
V+
GND
GND
S
S
3
4
S
D
S
3
4
4
4
GND
GND
D
3
D
D
3
4
IN
IN
3
Top View
Top View
Truth Table
-
DG541
Truth Table
-
DG542
Logic
Switch
Logic
SW1, SW
2
SW3, SW
4
0
1
OFF
ON
0
1
OFF
ON
ON
OFF
Logic “0” v 0.8 V
Logic “1” w 2 V
Logic “0” v 0.8 V
Logic “1” w 2 V
Ordering Information
Temp Range
DG540
Package
Part Number
20-Pin Plastic DIP
20-Pin PLCC
DG540DJ
to85_C
DG540DN
DG540AP
–55 to 125_C
20-Pin Sidebraze
DG540AP/883
DG541
16-Pin Plastic DIP
DG541DJ
–40 to 85_C
16-Pin Narrow SOIC
DG541DY
DG541AP
–55 to 125_C
16-Pin Sidebraze
DG541AP/883
DG542
16-Pin Plastic DIP
DG542DJ
–40 to 85_C
16-Pin Narrow SOIC
DG542DY
DG542AP
–55 to 125_C
16-Pin Sidebraze
DG542AP/883
2
Siliconix
S-53694—Rev. E, 28-May-97
DG540/541/542
Absolute Maximum Ratings
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 21 V
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 21 V
V– to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –19 V to +0.3 V
Power Dissipation (Package)a
b
16-Pin Plastic DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
c
20-Pin Plastic DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mW
d
16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
Digital Inputs . . . . . . . . . . . . . . . . . . . . . . . . (V–) –0.3 V to (V+) +0.3 V
or 20 mA, whichever occurs first
d
20-Pin PLCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mW
e
16-, 20-Pin Sidebraze DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
V , V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –0.3 V to (V–) +14 V
S
D
or 20 mA, whichever occurs first
Notes:
a. All leads welded or soldered to PC Board.
b. Derate 6.5 mW/_C above 25_C
c. Derate 7 mW/_C above 25_C
d. Derate 10 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . 20 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle max) . . . . . . . . . . 40 mA
Storage Temperature
(AP Suffix) . . . . . . . . . . . . . . –65 to 150_C
(DJ, DN, DY Suffixes) . . . . . –65 to 125_C
Schematic Diagram (Typical Channel)
V+
GND
V
REF
S
–
+
IN
D
V–
Figure 1.
Siliconix
S-53694—Rev. E, 28-May-97
3
DG540/541/542
Specificationsa
Test Conditions
Unless Specified
A Suffix
D Suffixes
–55 to 125_C
–40 to 85_C
V+ = 15 V, V– = –3 V
f
V
= 2 V, V
= 0.8 V
Parameter
Analog Switch
Symbol
Tempb Typc Mind Maxd Mind Maxd Unit
INH
INL
Analog Signal Range
V
V– = –5 V, V+ = 12 V
Full
–5
5
–5
5
V
ANALOG
Drain-Source
On-Resistance
Room
Full
30
60
100
60
75
r
DS(on)
I
= –10 mA, V = 0 V
W
S
D
r
Match
Dr
Room
2
6
6
DS(on)
DS(on)
S(off)
Source Off
Leakage Current
Room
Full
–0.05
–10
–500
10
500
–10
–100
10
100
I
I
V
= 0 V, V = 10 V
S
S
D
Drain Off
Leakage Current
Room
Full
–0.05
–0.05
–10
–500
10
500
–10
–100
10
100
V
= 10 V, V = 0 V
nA
D(off)
D
Channel On
Leakage Current
Room
Full
–10
–1000
10
1000
–10
–100
10
100
I
V
= V = 0 V
D(on)
S
D
Digital Control
Input Voltage High
Input Voltage Low
V
Full
Full
2
2
INH
V
V
0.8
0.8
INL
Room
Full
0.05
–1
–20
1
20
–1
–20
1
20
Input Current
I
V
= GND or V+
IN
mA
IN
Dynamic Characteristics
e
On State Input Capacitance
C
V
= V = 0 V
Room
Room
Room
Room
14
2
20
4
20
4
S(on)
S(off)
D(off)
S
D
e
pF
Off State Input Capacitance
C
V
= 0 V
= 0 V
S
e
Off State Output Capacitance
Bandwidth
C
V
2
4
4
D
BW
R
= 50 W, See Figure 5
500
45
MHz
L
DG540
DG541
Room
Full
70
130
70
130
Turn On Time
Turn Off Time
t
ON
Room
Full
55
20
25
100
160
100
160
R
C
= 1 kW
= 35 pF
50% to 90%
See Figure 2
L
DG542
L
ns
DG540
DG541
Room
Full
50
85
50
85
t
OFF
Room
Full
60
85
60
85
DG542
C
= 1000 pF, V = 0 V
See Figure 3
L
S
Charge Injection
Off Isolation
Q
Room
–25
pC
dB
DG540
DG541
DG542
Room
Room
Room
–80
–60
–75
R
R
= 75 W
= 75 W
IN
L
OIRR
f = 5 MHz
See Figure 4
R
= 10 W, R = 75 W
L
IN
All Hostile Crosstalk
Power Supplies
X
Room
–85
TALK(AH)
f = 5 MHz, See Figure 6
Room
Full
3.5
6
9
6
9
Positive Supply Current
I+
I–
All Channels On or Off
mA
Room
Full
–3.2
–6
–9
–6
–9
Negative Supply Current
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
= input voltage to perform proper function.
IN
4
Siliconix
S-53694—Rev. E, 28-May-97
DG540/541/542
Typical Characteristics
Supply Curent vs. Temperature
ID(off), IS(off) vs. Temperature
6
100 nA
10 nA
1 nA
5
4
I+
3
2
1
100 pA
10 pA
I
GND
0
–1
–2
–3
–4
–5
I–
1 pA
0.1 pA
–55 –35 –15
5
25 45 65 85 105 125
–55
–25
0
25
50
75
100 125
Temperature (_C)
Temperature (_C)
r
DS(on) vs. Drain Voltage
V+ Constant
V– Constant
160
140
120
100
80
42
40
38
36
34
32
30
20
18
42
40
38
36
34
32
30
20
18
V+ = 10 V
V+ = 15 V
V– = –3 V
125_C
V– = –5 V
V+ = 12 V
V+ = 15 V
25_C
V– = –3 V
60
–55_C
40
20
V– = –1 V
0
–3
–1
1
3
5
7
9
11
–5 –4 –3 –2 –1
0
10 11 12 13 14 15 16
V+ – Positive Supply (V)
V
– Drain Voltage (V)
V– – Negative Supply (V)
D
On Capacitance
Off Isolation
22
20
18
16
14
12
10
8
–110
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
DG540
DG542
DG541
6
10
100
1
0
2
4
6
8
10
12
14
V
– Drain Voltage (V)
f – Frequency (MHz)
D
Siliconix
S-53694—Rev. E, 28-May-97
5
DG540/541/542
Typical Characteristics (Cont’d)
Off Isolation vs. Frequency and Load Resistance
All Hostile Crosstalk
(DG540)
–100
–110
–100
–90
R
L
= 75 W
DG540
–80
–70
–60
–50
–40
–30
–20
–10
0
–90
–80
–70
–60
–50
–40
–30
–20
–10
180 W
1 kW
DG542
10 kW
DG541
10
100
1
10
100
1
f – Frequency (MHz)
f – Frequency (MHz)
Switching Times vs. Temperature
(DG540/541)
Charge Injection vs. VS
40
30
90
80
70
60
50
40
30
20
20
10
t
ON
0
–10
–20
–30
–40
t
OFF
C
L
= 1000 pF
10
0
–3 –2 –1
0
1
2
3
4
5
6
7
8
–55 –25
0
25
50
75
100 125
V
– Source Voltage (V)
Temperature (_C)
S
Switching and Break-Before-Make Time
vs. Temperature (DG542)
Operating Supply Voltage Range
20
18
16
14
12
10
90
80
t
ON
70
60
50
40
30
20
t
BBM
Operating
Voltage
Area
t
OFF
10
0
–55 –25
0
25
50
75
100 125
0
–1
–2
–3
–4
–5
–6
Temperature (_C)
V– – Negative Supply (V)
6
Siliconix
S-53694—Rev. E, 28-May-97
DG540/541/542
Test Circuits
+15 V
t <20 ns
t <20 ns
f
r
3 V
V+
Logic
Input
50%
S
D
3
V
V
O
IN
C
35 pF
L
Switch
Input
R
1 kW
L
V
S
GND
V–
90%
Switch
Output
0
–3 V
(includes fixture and stray capacitance)
t
t
OFF
ON
C
L
R
L
V
= V
S
O
R
L
+ r
DS(on)
Figure 2. Switching Time
+15 V
DV
O
V+
R
g
V
O
S
D
V
O
IN
GND
C
V
L
g
1000 pF
3 V
IN
ON
OFF
ON
X
V–
DV = measured voltage error due to charge injection
–3 V
O
The charge injection in coulombs is DQ = C x DV
L
O
Figure 3. Charge Injection
+15 V
+15 V
C
C
V+
V+
V
R
V
O
O
S
D
V
S
D
S
V
S
R = 50 W
g
R = 75 W
g
R
L
L
IN
75 W
IN
50 W
0 V, 2.4 V
0 V, 2.4 V
GND
V–
GND
V–
C
C
–3 V
–3 V
V
S
Off Isolation = 20 log
C = RF Bypass
V
O
Figure 4. Off Isolation
Figure 5. Bandwidth
Siliconix
S-53694—Rev. E, 28-May-97
7
DG540/541/542
Test Circuits (Cont’d)
C
+15 V
V+
S
1
D
1
V
O
R
75 W
L
10 W
2.4 V
IN
X
S
D
D
2
2
3
S
3
R
L
S
4
D
4
R
L
GND
V–
R
L
C
–15 V
VOUT
VIN
XTALK(AH) + 20 log10
Figure 6. All Hostile Crosstalk
Applications
an attenuation effect on the analog signal – which is
frequency dependent (like an RC low-pass filter). The
–3-dB bandwidth of the DG540 is typically 500 MHz (into
50 W). This measured figure of 500 MHz illustrates that
the switch channel can not be represented by a two stage RC
combination. The on capacitance of the channel is
distributed along the on-resistance, and hence becomes a
more complex multi stage network of R’s and C’s making
Device Description
The DG540/541/542 family of wideband switches offers
true bidirectional switching of high frequency analog or
digital signals with minimum signal crosstalk, low insertion
loss, and negligible non-linearity distortion and group
delay.
Built on the Siliconix D/CMOS process, these “T” switches
provide excellent off-isolation with a bandwidth of around
500 MHz (350 MHz for DG541). Silicon-gate D/CMOS
processing also yields fast switching speeds.
up the total r
and C
. See Application Note AN502
DS(on)
S(on)
for more details.
An on-chip regulator circuit maintains TTL input
compatibility over the whole operating supply voltage
range, easing control logic interfacing.
Off-Isolation and Crosstalk
Off-isolation and crosstalk are affected by the load
resistance and parasitic inter-electrode capacitances.
Higher off-isolation is achieved with lower values of R .
Circuit layout is facilitated by the interchangeability of
source and drain terminals.
L
However, low values of R increase insertion loss requiring
L
gain adjustments down the line. Stray capacitances, even a
fraction of 1 pF, can cause a large crosstalk increase. Good
Frequency Response
A single switch on-channel exhibits both resistance layout and ground shielding techniques can considerably
[r ] and capacitance [C ]. This RC combination has improve your ac circuit performance.
DS(on)
S(on)
8
Siliconix
S-53694—Rev. E, 28-May-97
DG540/541/542
Applications (Cont’d)
3. Capacitors
characteristics
should
-
have
good
high
frequency
Power Supplies
tantalum bead and/or monolithic
A useful feature of the DG54X family is its power supply
flexibility. It can be operated from a single positive supply
(V+) if required (V– connected to ground).
ceramic types are adequate.
Suitable decoupling capacitors are m1FĆ
to 10Ć
tantalum bead, plus 10Ć to 100ĆnF ceramic.
Note that the analog signal must not exceed V– by more
than –0.3 V to prevent forward biasing the substrate p-n
junction. The use of a V– supply has a number of
advantages:
+15 V
+
C
1
C
2
1. It allows flexibility in analog signal handling, i.e.,
with V-
=
-5
V
and V+ ="51Ć2V Va;c up to
V+
signals can be controlled.
S
D
D
D
D
1
1
2
3
4
2. The value of on capacitance ] [Cmay be
S(on)
reduced.
A
property known as `the bodyĆeffect' on
S
2
the DMOS
switch
devices
causes
various
DG540
parametric effects to occur. One of these effects is
S
3
the
reduction
in
C
for
an
increasing
V
S(on)
S
body-source. Note, however, that to increase V-4
normally requires V+ to be reduced (since V+ to
GNDs
V-
=
21
V
max.). Reduction in V+ causes an
hence compromise has to be
achieved. It is also useful to note that optimum
V–
increase in
r
,
a
DS(on)
C
1
C
2
C = 10 mF Tantalum
1
video linearity performance (e.g., differential phase
+
C = 0.1 mF Ceramic
2
and gain) occurs when V- is around -3 V.
–3 V
3. V- eliminates the need to bias the analog signal
using
potential
dividers
and
large
coupling
capacitors.
Figure 7. Supply Decoupling
Decoupling
Board Layout
PCB layout rules for good high frequency performance
must be observed to achieve the performance boasted by the
DG540. Some tips for minimizing stray effects are:
It is an established RF design practice to incorporate
sufficient bypass capacitors in the circuit to decouple the
power supplies to all active devices in the circuit. The
dynamic performance of the DG54X is adversely affected
by poor decoupling of power supply pins. Also, of even
more significance, since the substrate of the device is
connected to the negative supply, adequate decoupling of
this pin is essential.
1. Use extensive ground planes on double sided PCB,
separating adjacent signal paths. Multilayer PCB is
even better.
2. Keep signal paths as short as practically possible,
with all channel paths of near equal length.
Rules:
3. Careful arrangement of ground connections is also
1. Decoupling capacitors should be incorporated on
very important. Star connected system grounds
(See Figure 7.)
eliminate signal current flowing through ground
all power supply pins (V+, V-).
2. They should be mounted as close as possible patoth thpearasitic resistance from coupling between
device pins. channels.
Siliconix
S-53694—Rev. E, 28-May-97
9
DG540/541/542
Applications (Cont’d)
Figure 8 shows a 4-channel video multiplexer using a DG540.
+15 V
V+
CH
1
CH
2
Si582
+
75 W
CH
75 W
3
A = 2
75 W
CH
–
4
DIS
250 W
75 W
DG540
V–
250 W
75 W
–3 V
TTL Channel Select
Figure 8. 4 by 1 Video Multiplexing Using the DG540
Figure 9 shows an RGB selector switch using two DG542s.
+15 V
V+
R
1
Red Out
75 W
75 W
R
2
75 W
75 W
G
1
Green Out
G
2
DG542
V–
–3 V
+15 V
Si584
V+
B
1
Blue Out
Sync Out
75 W
75 W
B
2
75 W
75 W
Sync 1
Sync 2
DG542
RGB Source Select
V–
–3 V
Figure 9. RGB Selector Using Two DG542s
10
Siliconix
S-53694—Rev. E, 28-May-97
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