5962-8956801ZC [TEMIC]
FIFO, 4KX9, 120ns, Asynchronous, CMOS, CQCC32;
| 型号： | 5962-8956801ZC |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | FIFO, 4KX9, 120ns, Asynchronous, CMOS, CQCC32 先进先出芯片 |
| 文件： | 总35页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
REVISIONS
LTR
C
DESCRIPTION
DATE (YR-MO-DA)
93-11-15
APPROVED
M. A. Frye
Update boilerplate of document. Add devices 06 and 07. Add vendor
CAGE 61772 as source of supply for devices 06 and 07. Editorial
changes throughout.
D
E
Changes in accordance with NOR 5962-R187-95
95-08-14
00-01-21
M. A. Frye
Updated boilerplate to one-part, one-part number format. Added
provisions for the inclusion of radiation-hardened devices. - glg
Raymond Monnin
F
G
H
Drawing updated to reflect current requirements. - glg
Updated boilerplate paragraphs. Added 08 device. ksr
01-01-17
01-07-27
02-02-04
Raymond Monnin
Raymond Monnin
Raymond Monnin
Added packages T and N. Dose rate and total dose numbers were
changed; vendor had not previously shipped radhard devices. ksr
THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.
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PREPARED BY
Kenneth Rice
PMIC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
STANDARD MICROCIRCUIT
DRAWING
CHECKED BY
Ray Monnin
http://www.dscc.dla.mil
APPROVED BY
Michael. A. Frye
MICROCIRCUITS, MEMORY,
DIGITAL, CMOS, 4K X 9 FIFO,
MONOLITHIC SILICON
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
DRAWING APPROVAL DATE
08 Nov 1989
AMSC N/A
REVISION LEVEL
H
SIZE
CAGE CODE
5962-89568
A
67268
SHEET
1 OF 31
DSCC FORM 2233
APR 97
5962-E221-02
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN shall be as shown in the following example:
For device classes M and Q not using class designator in the PIN:
5962
-
|
89568
01
|
X
|
X
|
|
|
|
|
|
|
|
|
|
|
|
Federal
stock class
designator
RHA
designator
(see 1.2.1)
Device
type
(see 1.2.2)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\
/
\/
Drawing number
For device classes Q and V where class designator is included in the PIN:
5962
D
|
89568
01
|
Q
|
X
|
C
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Federal
stock class
designator
RHA
designator
(see 1.2.1)
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\
/
\/
Drawing number
1.2.1 (RHA) designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
Generic number
7204
Circuit function
Access time
120 ns
80 ns
01
02
03
04
05
06
07
08
4K X 9-bit parallel FIFO
4K X 9-bit parallel FIFO
4K X 9-bit parallel FIFO
4K X 9-bit parallel FIFO
4K X 9-bit parallel FIFO
4K X 9-bit parallel FIFO
4K X 9-bit parallel FIFO
4K X 9-bit parallel FIFO (very low power)
7204
7204
7204
7204
7204
7204
7204
65 ns
50 ns
40 ns
30 ns
20 ns
15 ns
1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as
listed below.
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for non-JAN class B microcircuits in
accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
2
DSCC FORM 2234
APR 97
1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835, and as follows:
Outline letter
Descriptive designator
Terminals
Package style
X
Y
Z
U
T
N
GDIP1-T28 or CDIP2-T28
GDFP2-F28
CQCC1-N32
GDIP4-T28 or CDIP3-T28
See figure 1
28
28
32
28
28
28
dual-in-line package
flat package
rectangular chip carrier
dual-in-line package
dual-in-line package
flat package
See figure 1
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.
1.3 Absolute maximum ratings.
Terminal voltage with respect to ground.................................... -0.5 V dc to +7.0 V dc
DC output current ...................................................................... 50 mA
Storage temperature range ....................................................... -65°C to +155°C
Maximum power dissipation ...................................................... 1.0 W
Lead temperature (soldering, 10 seconds)................................ +260°C
Thermal resistance, junction-to-case (θJC) ................................ See MIL-STD-1835
Junction temperature (TJ).......................................................... +150°C 1/
1.4 Recommended operating conditions.
Supply voltage range (VCC)........................................................ +4.5 V dc to +5.5 V dc
Minimum high level input voltage (VIH) ...................................... 2.2 V dc minimum 2/
Input low voltage (VIL)................................................................ 0.8 V dc maximum 3/
Case operating temperature range (TC) .................................... -55°C to +125°C
1.5 Radiation features.
Maximum total dose available (dose rate = 0.1 rad/s) --------------------------- 10 K Rads(Si)
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the
issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883
-
Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
1/ Maximum junction temperature may be increased to +175°C during burn-in and steady state life.
2/ VIH is 2.2 V minimum for all input pins except XI which is 3.5 V minimum.
3/ 1.5 V undershoots are allowed for 10 ns once per cycle.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
3
DSCC FORM 2234
APR 97
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD's).
MIL-HDBK-780 - Standard Microcircuit Drawings.
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of the documents which are DoD adopted are those listed in the issue of the DODISS
cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the DODISS are the issues of the
documents cited in the solicitation.
AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)
ASTM Standard F1192M-95
-
Standard Guide for the Measurement of Single Event Phenomena from
Heavy Ion Irradiation of Semiconductor Devices.
(Applications for copies of ASTM publications should be addressed to the American Society for Testing and Materials,
1916 Race Street, Philadelphia, PA 19103).
ELECTRONICS INDUSTRIES ASSOCIATION (EIA)
JEDEC Standard EIA/JESD78
-
IC Latch-Up Test.
(Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA
22201.)
(Non-Government standards and other publications are normally available from the organizations that prepare or distribute
the documents. These documents also may be available in or through libraries or other informational services.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations unless
a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-
38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in
the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M
shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
4
DSCC FORM 2234
APR 97
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required
in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535
and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or
for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain
the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 41 (see MIL-PRF-38535, appendix A).
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be
in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical
parameters of method 5004 and substitute lines 1 through 6 of table IIA herein.
b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made
available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and
power dissipation, as applicable, in accordance with the intent specified in test method 1015.
(1) Dynamic burn-in (method 1015 of MIL-STD-883, test condition C or D; for circuit, see 4.2.1b herein).
c. Interim and final electrical parameters shall be as specified in table IIA herein.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
5
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions
Group A
subgroups
Device
type
Limits
Min Max
Unit
-55°C ≤ T ≤ +125°C
C
VSS = 0 V
4.5 V ≤ V
≤ 5.5 V
CC
unless otherwise specified
Input leakage current
0.0 V ≤VIN ≤ VCC
1, 2, 3
1 1/
All
All
All
All
-10
10
2/
10
2/
µA
µA
V
ILI
M, D
2/
-10
2/
0.0 V ≤VIN ≤ VCC
≥ VIH
R
Output leakage
current
1, 2, 3
1 1/
ILO
M, D
Output low voltage
Output High voltage
1, 2, 3
1 1/
0.4
2/
VOL
VCC = 4.5 V, IOL = 8 mA
VIL = 0.8,
VIH = 2.2 V
M, D
I
OH= -2 mA
VCC = 4.5 V,
1, 2, 3
2.4
2/
V
VOH
VIL = 0.8, VIH = 2.2 V
M, D
1 1/
01-04,
06,07
Operating supply
current
ICC1
f = fS, outputs open, VCC = 5.5 V
f = 15.3 MHz outputs open
150
120
1, 2, 3
08
mA
mA
05
150
VCC = 5.5 V
M, D
2/
1 1/
01-07
08
25
Standby current
ICC2
1, 2, 3
R = W = RS =FL /RT = VIH
5
outputs open
M, D
1 1/
2/
4
01-07
08
Power down current
Input Capacitance
ICC3
All inputs = VCC -0.2 V,
outputs open
1, 2, 3
mA
pF
pF
0.4
2/
M, D
1 1/
4
01-05,
08
CIN
VI = 0.0 V, f = 1 MHz
TA = +25°C, See 4.4.1e
8
06,07
All
10
12
Output Capacitance
Functional tests
COUT
4
See 4.4.1c
M, D
7,8A,8B
7
1/
2/
2/
See footnotes at end of table.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
6
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics Continued.
Test
Symbol
Conditions
-55°C ≤ T ≤ +125°C
Group A
subgroups
Device
type
Limits
Unit
C
Min
Max
VSS = 0 V
4.5 V ≤ V ≤ 5.5 V
CC
unless otherwise specified
01
02
03
04
05
06
07
08
7.0
10
fS
CL = 30 pF,
See figures 4 and 5
9,10,11
Shift frequency
MHz
12.5
15
20
25
33.3
40
M, D
9 1/
2/
01
02
03
04
05
06
07
08
140
100
80
tRC
CL = 30 pF,
9,10,11
Read cycle time
See figures 4 and 5
ns
ns
ns
65
50
40
30
25
M, D
9 1/
2/
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
tA
CL = 30 pF,
9,10,11
Access time
See figures 4 and 5
M, D
9 1/
2/
01,02
03,04
05-08
20
15
10
tRR
CL = 30 pF,
9,10,11
Read recovery time
See figures 4 and 5
M, D
9 1/
2/
See footnotes at end of table.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
7
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics Continued.
Test
Symbol
Conditions
-55°C ≤ T ≤ +125°C
Group A
subgroups
Device
type
Limits
Min Max
Unit
C
VSS = 0 V
4.5 V ≤ V ≤ 5.5 V
CC
unless otherwise specified
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
CL = 30 pF,
See figures 4 and 5
9,10,11
Read pulse width
tRPW
ns
M, D
9 1/
2/
01-04
05-07
08
10
5.0
0
Read pulse low to
data bus at low Z
tRLZ
3/
CL = 30 pF,
9,10,11
See figures 4 and 5
ns
ns
M, D
9 1/
2/
01-04
06,07
05
Write pulse low to
data bus at low Z
tWLZ
CL = 30 pF,
9,10,11
5.0
10
3
3/ 4/
See figures 4 and 5
08
M, D
9 1/
2/
tDV
CL = 30 pF,
9,10,11
All
5.0
Data valid from read
pulse high
See figures 4 and 5
ns
M, D
9 1/
2/
See footnotes at end of table.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-89568
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
8
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics Continued.
Test
Symbol
Conditions
Group A
subgroups
Device
type
Limits
Unit
-55°C ≤ T ≤ +125°C
C
VSS = 0 V
Min
Max
4.5 V ≤ V
≤ 5.5 V
CC
unless otherwise specified
01
35
CL = 30 pF,
See figures 4 and 5
9,10,11
02-04
05
30
25
20
15
Read pulse high to
data bus high Z
tRHZ
3/
ns
06
07,08
M, D
9 1/
2/
01
02
03
04
05
06
07
08
140
100
80
Write cycle time
tWC
CL = 30 pF,
See figures 4 and 5
9,10,11
ns
65
50
40
30
25
M, D
9 1/
2/
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
tWPW
CL = 30 pF,
See figures 4 and 5
9,10,11
Write pulse width
ns
M, D
9 1/
2/
01-02
03-04
20
15
Write recovery time
tWR
CL = 30 pF,
9,10,11
See figures 4 and 5
ns
ns
05-08
10
M, D
9 1/
2/
01,02
03,04
05
40
30
20
18
12
9
tDS
CL = 30 pF,
See figures 4 and 5
9,10,11
Data setup time
06
07
08
M, D
9 1/
2/
See footnotes at end of table.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
9
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics Continued.
Test
Symbol
Conditions
-55°C ≤ T ≤ +125°C
Group A
subgroups
Device
type
Limits
Min Max
Unit
ns
C
VSS = 0 V
4.5 V ≤ V ≤ 5.5 V
CC
unless otherwise specified
01-03
10
Data hold time
tDH
CL = 30 pF,
See figures 4 and 5
9,10,11
04
5.0
0
05-08
M, D
9 1/
2/
01
02
03
04
05
06
07
08
140
100
80
65
50
40
30
25
Reset cycle time
tRSC
CL = 30 pF,
See figures 4 and 5
9,10,11
ns
M, D
9 1/
2/
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
tRS
CL = 30 pF,
See figures 4 and 5
9,10,11
Reset pulse width
ns
M, D
9 1/
2/
01,02
20
Reset recovery time
Reset setup time
tRSR
CL = 30 pF,
See figures 4 and 5
9,10,11
ns
ns
03,04
05-08
15
10
M, D
9 1/
2/
01
02
03
04
05
06
07,08
120
80
65
50
40
30
20
tRSS
3/
CL = 30 pF,
See figures 4 and 5
9,10,11
M, D
9 1/
2/
See footnotes at end of table.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
10
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics Continued.
Test
Symbol
Conditions
-55°C ≤ T ≤ +125°C
Group A
subgroups
Device
type
Limits
Unit
C
Min
Max
VSS = 0 V
4.5 V ≤ V ≤ 5.5 V
CC
unless otherwise specified
01
02
03
04
05
06
07
08
140
100
80
Retransmit cycle time
tRTC
CL = 30 pF,
See figures 4 and 5
9,10,11
ns
65
50
40
30
25
M, D
9 1/
2/
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
Retransmit pulse
width
tRT
3/
CL = 30 pF,
See figures 4 and 5
9,10,11
ns
M, D
9 1/
2/
01,02
20
Retransmit recovery
time
tRTR
CL = 30 pF,
9,10,11
ns
ns
03,04
05-08
15
10
See figures 4 and 5
M, D
9 1/
2/
01
02
03
04
05
06
07
08
140
100
80
Reset to empty flag
low
tEFL
CL = 30 pF,
See figures 4 and 5
9,10,11
65
50
40
30
25
M, D
9 1/
2/
See footnotes at end of table.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-89568
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
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11
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics Continued.
Test
Symbol
Conditions
-55°C ≤ T ≤ +125°C
Group A
subgroups
Device
type
Limits
Min Max
Unit
C
VSS = 0 V
4.5 V ≤ V ≤ 5.5 V
CC
unless otherwise specified
01-03
04
05
06
07
60
Read low to empty
flag low
tREF
CL = 30 pF,
See figures 4 and 5
9,10,11
45
35
30
20
15
ns
08
M, D
9 1/
2/
01-03
04
05
06
07
60
45
35
30
20
25
Read high to full flag
high
tRFF
tWEF
tWFF
CL = 30 pF,
9,10,11
See figures 4 and 5
ns
ns
08
M, D
9 1/
2/
01-03
04
05
06
07
60
45
35
30
20
15
Write high to empty
flag high
CL = 30 pF,
See figures 4 and 5
9,10,11
08
M, D
9 1/
2/
01-03
04
05
06
07,08
60
45
35
30
20
Write low to full flag
low
CL = 30 pF,
See figures 4 and 5
9,10,11
ns
ns
M, D
9 1/
2/
01
02
03
04
05
06
07
08
140
100
80
65
50
40
30
25
Reset to half-full and
full-flag high
tHFH
tFFH
CL = 30 pF,
See figures 4 and 5
9,10,11
M, D
9 1/
2/
See footnotes at end of table.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
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DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics Continued.
Test
Symbol
Conditions
-55°C ≤ T ≤ +125°C
Group A
subgroups
Device
type
Limits
Unit
C
Min
Max
VSS = 0 V
4.5 V ≤ V ≤ 5.5 V
CC
unless otherwise specified
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
Expansion out low
delay from clock
tXOL
CL = 30 pF,
See figures 4 and 5
9,10,11
ns
M, D
9 1/
2/
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
Expansion out high
delay from clock
tXOH
CL = 30 pF,
See figures 4 and 5
9,10,11
ns
M, D
9 1/
2/
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
tXI
CL = 30 pF,
See figures 4 and 5
9,10,11
XI pulse width
ns
M, D
9 1/
2/
tXIR
CL = 30 pF,
9,10,11
All
10
XI recovery time
See figures 4 and 5
ns
M, D
9 1/
2/
See footnotes at end of table.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-89568
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
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13
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics Continued.
Test
Symbol
Group A
subgroups
Device
type
Limits
Unit
Conditions
-55°C ≤ T ≤ +125°C
C
Min
Max
VSS = 0 V
4.5 V ≤ V ≤ 5.5 V
CC
unless otherwise specified
01-05
06-08
15
10
tXIS
CL = 30 pF,
See figures 4 and 5
9,10,11
XI set-up time
ns
ns
M, D
9 1/
2/
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
Retransmit setup time
tRTS
tRPE
tWHF
CL = 30 pF,
9,10,11
See figures 4 and 5
M, D
9 1/
2/
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
CL = 30 pF,
9,10,11
See figures 4 and 5
ns
Read pulse width after
EF high
M, D
9 1/
2/
01
140
100
80
Write low to half-full
flag low
CL = 30 pF,
9,10,11
02
See figures 4 and 5
ns
03
04
65
05
50
06
40
07-08
30
M, D
9 1/
2/
See footnotes at end of table.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
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14
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics Continued.
Test
Symbol
Group A
subgroups
Device
type
Limits
Unit
Conditions
-55°C ≤ T ≤ +125°C
C
Min
Max
VSS = 0 V
4.5 V ≤ V ≤ 5.5 V
CC
unless otherwise specified
01
140
100
85
Read high to half-full
flag high
tRHF
CL = 30 pF,
See figures 4 and 5
9,10,11
02
ns
03
04
65
05
50
06
40
07,08
30
M, D
9 1/
2/
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
tWPF
CL = 30 pF,
See figures 4 and 5
9,10,11
ns
Write pulse width after
FF high
M, D
9 1/
2/
1/ When performing postirradiation electrical measurements for any RHA level TA = +25°C. Limits shown are guaranteed
at TA = +25°C. The M and D in the test condition column are the postirradiation limits for the device types specified in the
device types column.
2 Preirradiation values for RHA marked devices shall also be the postirradiation values, unless otherwise specified.
3/ If not tested, shall be guaranteed to the limits specified in table I.
4/ Only applies to read data flow through mode.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
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Case outline T
Note:
Lead finishes are in accordance with MIL-PRF-38535.
FIGURE 1. Case outlines.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
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APR 97
Case outline T - Continued.
Symbol
Millimeters
Inches
Min
3.30
0.38
0.36
0.96
0.20
-
Max
5.84
2.54
0.58
1.65
0.38
37.72
-
Min
.130
.015
.014
.038
.008
-
Max
.230
.100
.023
.065
.015
1.485
-
A
Q
b
b1
c
D
S1
E
0.13
6.10
2.92
-
.005
.240
.115
-
7.87
5.08
2.54
8.13
.310
.200
.100
.320
L
S
E1
e
7.37
.290
2.54 BSC
.100 BSC
S2
α
0.13
0°
-
15°
-
.005
0°
-
15°
-
−
−
L1
3.30
.130
28
N
NOTE: Although dimensions are in inches, the US government preferred system of measurement is the metric SI system.
However, since this item was originally designed using inch-pound units of measurement, in the event of conflict
between the two, the inch-pound units shall take precedence. Metric equivalents are for general information only.
FIGURE 1. Case outlines - continued.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
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DSCC FORM 2234
APR 97
Case outline N.
Note:
Lead finishes are in accordance with MIL-PRF-38535.
FIGURE 1. Case outlines - continued.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-89568
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REVISION LEVEL
H
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DSCC FORM 2234
APR 97
Case outline N - Continued.
Symbol
Millimeters
Inches
Min
Max
3.30
0.48
0.15
18.80
10.67
---
Min
.090
.015
.003
---
Max
.130
.019
.006
.740
.420
---
A
b
2.29
0.38
0.08
---
c
D
E
9.65
4.57
0.76
.380
.180
.030
E2
E3
e
---
---
1.27 BSC
.050 BSC
L
6.35
0.66
---
9.40
---
.250
.026
---
.370
---
Q
S
1.30
---
.051
---
S1
N
0.00
.000
28
FIGURE 1. Case outlines - continued.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
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DSCC FORM 2234
APR 97
Device types
All
Case outlines
X,Y,U,T,N
Z
Terminal number
Terminal symbol
1
2
NC
W
D8
W
D8
D3
D2
D1
D0
3
4
5
6
7
D3
D2
D1
D0
XI
8
9
FF
Q0
XI
FF
Q1
Q2
Q0
10
11
12
13
14
15
Q1
NC
Q2
Q3
Q8
Q3
Q8
GND
R
Q4
GND
NC
16
17
18
Q5
Q6
R
Q7
Q4
19
20
Q5
Q6
Q7
XO / HF
EF
21
22
23
24
25
26
RS
FL/RT
D7
XO / HF
EF
D6
D5
RS
FL/RT
D4
NC
27
28
29
30
31
VCC
D7
D6
D5
D4
VCC
32
NC = no connection
FIGURE 2. Terminal connections.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
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DSCC FORM 2234
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Reset and retransmit
Single device configuration/width expansion mode
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Mode
Inputs
|
Internal status
|
Outputs
|
|
|
|
| RS | RT | XI | Read pointer
| Write pointer
| EF | FF | HF |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| Reset
| Retransmit
| Read/write
|
| 0
| 1
| 1
|
| X
| 0
| 1
|
| 0
| 0
| 0
|
| Location zero | Location zero
| Location zero | Unchanged
| Increment 1/
|
| 0
| X
| X
|
| 1
| X
| X
|
| 1
| X
| X
|
| Increment 1/
|
1/ Pointer will increment if flag is high.
Reset and first load
Depth expansion/compound expansion mode
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Inputs
Internal status
|
| Outputs
|
|
|
|
|
| Mode
|
|
| Reset first device
| Reset all other devices
| Read/write
| RS | FL | XI | Read pointer
| Write pointer
|
|
| EF | FF
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 0
| 0
| 1
|
| 0
| 1
| X
|
| 1/
| 1/
| 1/
|
| Location zero | Location zero
| Location zero | Location zero
| 0
| 0
| X
|
| 1
| 1
| X
|
|
|
X
|
|
X
|
1/ XI is connected to XO of previous device.
NOTES: RS = Reset input, FL /RT = First load/retransmit, EF = Empty flag output,
FF = Full flag output, XI = Expansion input, and HF = Half-full flag output
0 = Low level voltage
1 = High level voltage
X = Don't care
FIGURE 3. Truth tables.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
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21
DSCC FORM 2234
APR 97
NOTE: CL includes scope and jig capacitance.
AC test conditions
|
|
|
|
|
|
|
|
| Input pulse levels
| Input rise and fall times
| Input timing reference levels
| Output reference levels
|
| GND to 3.0 V
|
|
|
|
5 ns
1.5 V
1.5 V
FIGURE 4. Output load circuit and ac test conditions.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
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DSCC FORM 2234
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Notes:
1. EF , FF, and HF may change status during RESET but flags will be valid at tRSC
2. W and R = VIH around the rising edge of RS .
.
FIGURE 5. Timing waveforms - continued.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
APR 97
FIGURE 5. Timing waveforms - continued.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
APR 97
Note 3: EF , FF, and HF may change status during RETRANSMIT but flags will be valid to tRTC
.
FIGURE 5. Timing waveforms - continued.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
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FIGURE 5. Timing waveforms - continued.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
26
DSCC FORM 2234
APR 97
FIGURE 5. Timing waveforms.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
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DSCC FORM 2234
APR 97
TABLE IIA. Electrical test requirements. 1/ 2/ 3/ 4/ 5/ 6/ 7/
Line
no.
Test
requirements
Subgroups
(per method
5005, table I)
Subgroups
(per MIL-PRF-38535,
table III)
Device class M Device class Q
Device class V
1
2
Interim electrical
parameters (see 4.2)
1,7,9
1,7,9
Static burn-in I
method 1015
Not
required
Not
required
Not
required
3
4
Same as line 1
1*,7* ∆
Dynamic burn-in
(method 1015)
Required
Required
Required
5
6
Same as line 1
1*,7* ∆
Final electrical
parameters
1*,2,3,7*,
8A,8B,9,10,11
1*,2,3,7*,
1*,2,3,7*,
8A,8B,9,10,11 8A,8B,9,10,11
7
Group A test
requirements
1,2,3,4**,7,8A,
8B,9,10,11
1,2,3,4**,7,
8A,8B,9,10,11
1,2,3,4**,7,
8A,8B,9,10,11
8
9
Group C end-point
electrical parameters
2,3,7,
8A,8B
2,3,7,
8A,8B
1,2,3,7,
8A,8B,9,10,11 ∆
Group D end-point
electrical parameters
2,3,7,
8A,8B
2,3,7,
8A,8B
2,3,7
8A,8B
10
Group E end-point
1,7,9
1,7,9
1,7,9
electrical parameters
1/ Blank spaces indicate tests are not applicable.
2/ Any or all subgroups may be combined when using high-speed testers.
3/ Subgroups 7 and 8 functional tests shall verify the truth table.
4/ * indicates PDA applies to subgroups 1 and 7.
5/ ** see 4.4.1e.
6/ ∆ indicates delta limit (see table IIB) shall be required where specified, and the delta values shall be
computed with reference to the previous interim electrical parameters (see line 1).For device classes Q and
V performance of delta limits shall be as specified in the manufacturer's QM plan.
7/ See 4.4.1d.
4.2.2 Additional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device
manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-
PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1015 of MIL-STD-883.
b.Interim and final electrical test parameters shall be as specified in table IIA herein.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-
38535, appendix B.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
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DSCC FORM 2234
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4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-
38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits
alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535,
appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of
MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a. Tests shall be as specified in table IIA herein.
b. Subgroups 5 and 6 of table I of method 5005 of MIL-STD-883 shall be omitted.
c. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V,
subgroups 7 and 8 shall include verifying the functionality of the device.
d. O/V (latch-up) tests shall be measured only for initial qualification and after any design or process changes which may
affect the performance of the device. For device class M, procedures and circuits shall be maintained under document
revision level control by the manufacturer and shall be made available to the preparing activity or acquiring activity
upon request. For device classes Q and V, the procedures and circuits shall be under the control of the device
manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the preparing activity or
acquiring activity upon request. Testing shall be on all pins, on five devices with zero failures. Latch-up test shall be
considered destructive. Information contained in JEDEC Standard EIA/JESD78 may be used for reference.
e. Subgroup 4 (C and C
IN OUT
measurements) shall be measured only for initial qualification and after any process or
design changes which may affect input or output capacitance. Capacitance shall be measured between the
designated terminal and GND at a frequency of 1 MHz. Sample size is 15 devices with no failures, and all input and
output terminals tested.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M.
a. Steady-state life test conditions, method 1005 of MIL-STD-883:
(1) Test condition C. The test circuit shall be maintained by the manufacturer under document revision level control and
shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005.
(2) TA = +125°C, minimum.
(3) Test duration: 1,000 hours, except as specified in method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-
PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
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DSCC FORM 2234
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TABLE IIB. Delta limits at +25°C.
|
|
|
|
Device types
All
|
|
|
| Parameter 1/
|
| I
|
| I , I
LI LO
,I
CC2 CC3
| +10% of specified value
| in table I.
| +10% of specified value
|
|
|
|
| in table I.
|
1/ The above parameter shall be recorded
before and after the required burn-in and
life tests to determine the delta.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point
electrical parameters shall be as specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition B and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater
than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall be the
pre-irradiation end-point electrical parameter limit at 25°C ± 5°C. Testing shall be performed at initial qualification and after any
design or process changes which may affect the RHA response of the device.
4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test
method 1020 of MIL-STD-883 and as specified herein. Test shall be performed on devices, SEC, or approved test structures at
technology qualification and after any design or process changes which may affect the RHA capability of the process.
4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1021 of MIL-
STD-883 and herein.
a.Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes
which may affect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified.
b.Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved radiation
hardness assurance plan and MIL-PRF-38535.
4.4.4.4 Single event phenomena (SEP). SEP testing shall be required on class V devices. SEP testing shall be performed
on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial
qualification and after any design or process changes which may affect the upset or latchup characteristics. Test four devices
with zero failures. ASTM standard F1192 may be used as a guideline when performing SEP testing. The test conditions for
SEP are as follows:
a.The ion beam angle of incidence shall be normal to the die surface and 60 degrees to the normal, inclusive (i.e., 0° <
angle < 60°). No shadowing of the ion beam due to fixturing or package related effects is allowed.
b.The fluence shall be greater than 100 errors or > 107 ions/cm2.
c. The flux shall be between 102 and 105 ion/cm2/s. The cross section shall be verified to be flux independent by measuring
the cross section at two flux rates which differ by at least an order of magnitude.
d.The particle range shall be > 20 microns in silicon.
e.The test temperature shall be +25°C and the maximum rated operating temperature +10°C.
f. Bias conditions shall be VDD = 3.14 V dc for the upset measurements and VDD = 3.46 V dc for the latchup measurements.
g.Test four devices with zero failures.
h.SEP test limits shall be maintained by the manufacturer under document revision level control and shall be made
available to the preparing or acquiring activity upon request.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
30
DSCC FORM 2234
APR 97
4.5 Delta measurements for device class V. Delta measurements, as specified in table IIA, shall be made and recorded
before and after the required burn-in screens and steady-state life tests to determine delta compliance. The electrical
parameters to be measured, with associated delta limits are listed in table IIB. The device manufacturer may, at his option,
either perform delta measurements or within 24 hours after life test perform final electrical parameter tests, subgroups 1, 7, 9.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device
classes Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users shall inform Defense Supply Center Columbus when a system application
requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list
will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronics devices
(FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43216-5000, or telephone
(614) 692-0547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-
PRF-38535 and MIL-STD-1331, and as follows.
CIN...................................................Input terminal capacitance.
COUT ................................................Output and bidirectional output terminal capacitance.
GND................................................Ground zero voltage potential.
ICC ...................................................Supply current.
ILI.....................................................Input leakage current.
ILO ...................................................Output leakage current.
TC....................................................Case temperature.
VCC..................................................Positive supply voltage.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
31
DSCC FORM 2234
APR 97
6.5.2 Waveforms.
Waveform
symbol
Input
Output
MUST BE
WILL BE
VALID
VALID
CHANGE FROM
H TO L
WILL CHANGE
FROM
H TO L
CHANGE FROM
L TO H
WILL CHANGE
FROM
L TO H
DON'T CARE
ANY CHANGE
PERMITTED
CHANGING
STATE
UNKNOWN
HIGH
IMPEDANCE
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-
38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have
agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
32
DSCC FORM 2234
APR 97
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 02-02-04
Approved sources of supply for SMD 5962-89568 are listed below for immediate acquisition only and shall be added
to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to
include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of
compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated
revision of MIL-HDBK-103 and QML-38535 .
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| Standardized
| military drawing
| PIN 1/
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|Vendor | Vendor
| CAGE similar
|number | PIN 3/
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| 5962-8956801XA
| 61772 | IDT7204L120DB
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2/
| MM1I-67204-55MB
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| 5962-8956801YA
| 61772 | IDT7204L120XEB
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| 5962-8956801ZA
| 61772 | IDT7204L120LB
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2/
| MM4J-67204-55MB
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| 5962-8956802XA
| 61772 | IDT7204L80DB
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2/
| MM1I-67204-55MB
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| 5962-8956802YA
| 61772 | IDT7204L80XEB
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| 5962-8956802ZA
| 61772 | IDT7204L80LB
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2/
| MM4J-67204-55MB
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| 5962-8956803XA
| 61772 | IDT7204L65DB
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2/
| MM1I-67204-55MB
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| 5962-8956803YA
| 61772 | IDT7204L65XEB
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| 5962-8956803ZA
| 61772 | IDT7204L65LB
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2/
| MM4J-67204-55MB
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| 5962-8956804XA
| 61772 | IDT7204L50DB
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2/
2/
| MM1I-67204-45MB
| AM7204A-50BXA
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| 5962-8956804UA
| 61772 | IDT7204L50TDB
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| 5962-8956804YA
| 61772 | IDT7204L50XEB
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| 5962-8956804ZA
| 61772 | IDT7204L50LB
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2/
2/
| MM4J-67204-45MB
| AM7204A-50BUA
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| 5962-8956804QUC
2/
|MMCP-67204EV-50MQ
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| 5962-8956804VUC
2/
2/
2/
|SMCP-67204EV-50SV
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| 5962-8956804QYC
|MMDP-67204EV-50MQ
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| 5962-8956804VYC
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|SMDP-67204EV-50SV
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| 5962-8956804QTC |F7400 |MMCP-67204EV-50MQ
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| 5962-8956804VTC
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|F7400 |SMCP-67204EV-50SV
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| 5962-8956804QNC |F7400 |MMDP-67204EV-50MQ
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| 5962-8956804VNC |F7400 |SMDP-67204EV-50SV
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See footnote at end of list.
1 of 3
STANDARDIZED MILITARY DRAWING SOURCE APPROVAL BULLETIN - Continued.
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| Standardized
| military drawing
| PIN 1/
|Vendor | Vendor
| CAGE similar
|number | PIN 3/
2/
| 61772 | IDT7204L40DB
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| 5962-8956805XA
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2/
2/
| MM1I-67204-35MB
| AM7204A-40BXA
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| 5962-8956805UA
| 61772 | IDT7204L40TDB
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| 5962-8956805YA
| 61772 | IDT7204L40XEB
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| 5962-8956805ZA
| 61772 | IDT7204L40LB
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2/
2/
| MM4J-67204-35MB
| AM7204A-40BUA
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| 5962-8956805QUC
2/
|MMCP-67204EV-40MQ
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| 5962-8956805VUC
2/
2/
2/
|SMCP-67204EV-40SV
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| 5962-8956805QYC
|MMDP-67204EV-40MQ
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| 5962-8956805VYC
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|SMDP-67204EV-40SV
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| 5962-8956805QTC |F7400 |MMCP-67204EV-40MQ
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| 5962-8956805VTC
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|F7400 |SMCP-67204EV-40SV
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| 5962-8956805QNC |F7400 |MMDP-67204EV-40MQ
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| 5962-8956805VNC |F7400 |SMDP-67204EV-40SV
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| 5962-8956806XA
| 61772 | IDT7204L30DB
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| 5962-8956806YA
| 61772 | IDT7204L30XEB
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| 5962-8956806ZA
| 61772 | IDT7204L30LB
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| 5962-8956806UA
| 61772 | IDT7204L30TDB
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| 5962-8956806QUC
2/
2/
2/
2/
|MMCP-67204FV-30MQ
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| 5962-8956806VUC
|SMCP-67204FV-30SV
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| 5962-8956806QYC
|MMDP-67204FV-30MQ
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| 5962-8956806VYC
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|SMDP-67204FV-30SV
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| 5962-8956806QTC |F7400 |MMCP-67204FV-30MQ
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| 5962-8956806VTC
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|F7400 |SMCP-67204FV-30SV
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| 5962D8956806VTC |F7400 |SMCP-67204FV-30SR
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| 5962-8956806QNC |F7400 |MMDP-67204FV-30MQ
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| 5962-8956806VNC |F7400 |SMDP-67204FV-30SV
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| 5962D8956806VNC |F7400 |SMDP-67204FV-30SR
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See footnote at end of list.
2 of 3
STANDARDIZED MILITARY DRAWING SOURCE APPROVAL BULLETIN - Continued.
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| Standardized
| military drawing
| PIN 1/
|Vendor | Vendor
| CAGE similar
|number | PIN 3/
2/
| 61772 | IDT7204L20DB
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| 5962-8956807XA
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| 5962-8956807YA
| 61772 | IDT7204L20XEB
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| 5962-8956807ZA
| 61772 | IDT7204L20LB
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| 5962-8956807UA
| 61772 | IDT7204L20TDB
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| 5962-8956808QUC
2/
2/
2/
2/
|MMCP-67204FV-15MQ
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| 5962-8956808VUC
|SMCP-67204FV-15SV
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| 5962-8956808QYC
|MMDP-67204FV-15MQ
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| 5962-8956808VYC
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|SMDP-67204FV-15SV
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| 5962-8956808QTC |F7400 |MMCP-67204FV-15MQ
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| 5962-8956808VTC
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|F7400 |SMCP-67204FV-15SV
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| 5962D8956808VTC |F7400 |SMCP-67204FV-15SR
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| 5962-8956808QNC |F7400 |MMDP-67204FV-15MQ
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| 5962-8956808VNC |F7400 |SMDP-67204FV-15SV
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| 5962D8956808VNC |F7400 |SMDP-67204FV-15SR
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1/ The lead finish shown for each PIN representing a hermetic
package is the most readily available from the manufacturer
listed for the part. If the desired lead finish is not listed,
contact the Vendor to determine its availability.
2/ No longer available from an approved source.
3/ Caution. Do not use this number for item acquisition. Items
acquired to this number may not satisfy the performance
requirements of this drawing.
Vendor CAGE
Vendor name
and address
number
61772
Integrated Device Technology, Incorporated
2975 Stender Way
Santa Clara, CA 95054-8015
F7400
Atmel Nantes
La Chantrerie BP 70602
44306 NANTES CEDEX 03
FRANCE
The information contained herein is disseminated for convenience only and
the Government assumes no liability whatsoever for any inaccuracies in this
information bulletin.
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