TC4627EOE [TELCOM]
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER; 与电压三倍功率CMOS驱动器
| 型号： | TC4627EOE |
| 厂家： | 
TELCOM SEMICONDUCTOR, INC |
| 描述： | POWER CMOS DRIVERS WITH VOLTAGE TRIPLER |
| 文件： | 总7页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4
TC4626
TC4627
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
FEATURES
GENERAL DESCRIPTION
■ Power driver with on Board Voltage Booster
■ Low IDD ......................................................... < 4 mA
■ Small Package ........................................ 8-Pin PDIP
■ Under-Voltage Circuitry
■ Fast Rise-Fall Time .................. < 40nsec @ 1000pF
■ Below-Rail Input Protection
The TC4626/4627 are single CMOS high speed drivers
withanon-boardvoltageboostcircuit.Thesepartsworkwith
aninputsupplyvoltagefrom4to6volts. Theinternalvoltage
booster will produce a VBOOST potential up to 12 volts above
VIN.ThisVBOOST isnotregulated,soitsvoltageisdependent
on the input VDD voltage and output drive loading require-
ments. An internal undervoltage lockout circuit keeps the
output in a low state when VBOOST drops below 7.8 volts.
Output is enabled when VBOOST is above 11.3 volts.
APPLICATIONS
■ Raises 5V to drive higher-Vgs (ON) MOSFETs
■ Eliminates one system power supply
ORDERING INFORMATION
PIN CONFIGURATIONS
Part No.
Package
Temp. Range
16-Pin SOIC (Wide)
8-Pin Plastic DIP
TC4626COE
TC4626CPA
TC4626EOE
TC4626EPA
TC4626MJA
16-Pin SOIC (Wide)
8-Pin Plastic DIP
16-Pin SOIC (Wide)
8-Pin Plastic DIP
8-Pin CerDIP
– 55°C to +125°C
– 40°C to +85°C
– 40°C to +85°C
– 0°C to +70°C
– 0°C to +70°C
/CerDIP
–
+
–
C1
V
C1
1
2
3
4
5
6
7
8
16
V
1
2
3
4
8
7
6
5
DD
DD
NC
+
15 NC
14 NC
C1
IN
V
TC4626
TC4627
C1
C2
GND
BOOST
IN
13
NC
C2
OUT
TC4627COE
TC4627CPA
TC4627EOE
TC4627EPA
TC4627MJA
16-Pin SOIC (Wide)
8-Pin Plastic DIP
16-Pin SOIC (Wide)
8-Pin Plastic DIP
8-Pin CerDIP
– 55°C to +125°C
– 40°C to +85°C
– 40°C to +85°C
– 0°C to +70°C
– 0°C to +70°C
TC4626
TC4627
12 NC
V
11
NC
BOOST
10 NC
OUT
NC
GND
9
FUNCTIONAL BLOCK DIAGRAM
2
V
(UNREGULATED 3 x V
)
BOOST
6
C1+
DD
+
EXT
1
C
1
EXT
C
+
C1-
C2
3
3
VOLTAGE
BOOSTER
+
EXT
C
UV LOCK
V = 2 x V
DD
2
NON-
INVERTING
4627
5
OUTPUT
8
7
4
V
CLOCK
DD
IN
INVERTING
4626
GND
NOTE: Pin numbers correspond to 8-pin package
TC4626/7-7 10/21/96
TELCOM SEMICONDUCTOR, INC.
4-271
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
TC4626
TC4627
Supply Voltage ...........................................................6.2V
Input Voltage, Any Terminal...... VS + 0.3V to GND – 0.3V
Operating Temperature: M Version ...... – 55°C to +125°C
E Version ......... – 40°C to +85°C
C Version.............. 0°C to +70°C
Maximum Chip Temperature................................. +150°C
Storage Temperature ............................ – 65°C to +150°C
Lead Temperature (10 sec)................................... +300°C
ABSOLUTE MAXIMUM RATINGS
Package Power Dissipation (TA ≤ 70°C)
PDIP .................................................................730mW
CerDIP ..............................................................800mW
SOIC .................................................................760mW
Derating Factor
PDIP ....................................... 5.6 mW/°C Above 36°C
CerDIP ........................................................ 6.0 mW/°C
ELECTRICAL CHARACTERISTICS: TA = 25°C VDD = 5V C1 = C2 = C3 10µF unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Driver Input
VIH
Logic 1, Input Voltage
Logic 0, Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
1
V
V
VIL
IIN
0V ≤ VIN ≤ VDRIVE
– 1
µA
Driver Output
VOH
High Output Voltage
Low Output Voltage
VBOOST – 0.025
—
—
10
8
—
0.025
15
V
V
Ω
Ω
A
VOL
—
—
—
—
RO
Output Resistance, High
Output Resistance, Low
Peak Output Current
IOUT = 10 mA, VDD = 5V
IOUT = 10 mA, VDD = 5V
RO
10
IPK
1.5
—
Switching Time
tR
Rise Time
Test Figure 1,2
Test Figure 1,2
Test Figure 1,2
Test Figure 1,2
—
—
33
27
35
45
—
40
35
45
55
—
nsec
nsec
nsec
nsec
MHz
tF
Fall Time
tD1
tD2
FMAX
Delay Time
—
Delay Time
—
Maximum Switching Frequency
Test Figure 1
1.0
VDD = 5V, VBOOST > 8.5V
Voltage Booster
R3
Voltage Tripler Output
Source Resistance
IL = 10 mA, VDD = 5V
—
—
300
120
400
200
Ω
Ω
R2
Voltage Doubler Output
Source Resistance
FOSC
VOSC
Oscillator Frequency
12
—
—
28
10
kHz
V
Oscillator Amplitude
Measured at C1-
RLOAD = 10kΩ
4.5
UV
@ VBOOST
Undervoltage Threshold
Start Up Voltage
@VDD = 5V
7.0
7.8
11.3
—
8.5
12
—
V
V
V
VSTART
@ VBOOST
10.5
14.6
VBOOST
No Load
Power Supply
IDD
Power Supply Current
Supply Voltage
VIN = LOW or HIGH
—
—
—
2.5
6.0
mA
V
VDD
4.0
4-272
TELCOM SEMICONDUCTOR, INC.
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
4
TC4626
TC4627
ELECTRICAL CHARACTERISTICS: TA = Over Operating Temperature Range VDD = 5V C1 = C2 = C3 10µF
unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Driver Input
VIH
Logic 1, Input Voltage
Logic 0, Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
10
V
V
VIL
IIN
0V ≤ VIN ≤ VBOOST
– 10
µA
Driver Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
Output Resistance, High
VDRIVE – 0.025
—
—
—
—
V
V
0.025
IOUT = 10 mA, VDD = 5V
C & E Version (TA = 70°C or 85°C)
M Version (TA = 125°C)
—
—
15
15
20
25
Ω
RO
Output Resistance, Low
Peak Output Current
IOUT = 10 mA, VDD = 5V
C & E Version (TA = 70°C or 85°C)
M Version (TA = 125°C)
—
—
10
10
13
15
Ω
IPK
—
1.5
—
A
Switching Time
tR
Rise Time
Fall Time
Test Figure 1,2
Test Figure 1,2
Test Figure 1,2
Test Figure 1,2
—
—
—
—
—
—
—
55
50
60
70
—
nsec
nsec
nsec
nsec
kHz
tF
tD1
tD2
FMAX
Delay Time
Delay Time
—
—
Maximum Switching Frequency Test Figure 1
750
VDD = 5V, VBOOST > 8.5V
Voltage Booster
R3
Voltage Boost Output
Source Resistance
IL = 10 mA, VDD = 5V
—
—
400
170
500
300
Ω
Ω
R2
Voltage Doubler Output
Source Resistance
FOSC
VOSC
Oscillator Frequency
5
—
—
50
10
kHz
V
Oscillator Amplitude
Measured at C1-
RLOAD = 10kΩ
4.5
UV
@ VBOOST
Undervoltage Threshold
Start Up Voltage
@VDD = 5V
7.0
7.8
11.3
—
8.5
12
—
V
V
V
VSTART
@ VBOOST
10.5
14.6
VBOOST
No Load
Power Supply
IDD
Power Supply Current
Supply Voltage
VIN = LOW or HIGH
—
—
—
4
mA
V
VDD
4.0
6.0
TELCOM SEMICONDUCTOR, INC.
4-273
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
TC4626
TC4627
SWITCHING TIME TEST CIRCUITS
V
V
BOOST
BOOST
0.1 µF
Ceramic
0.1µF
Ceramic
C
C
3
3
10 µF
10 µF
6
6
7
2
5
7
2
5
INPUT
OUTPUT
INPUT
OUTPUT
C
= 1000 pF
C
= 1000 pF
L
L
C
C
1
1
C1+
C1-
C1+
C1-
10 µF
10 µF
1
3
1
3
8
8
TC4627
4
TC4626
4
V
= 5V
C
2
V
= 5V
C
2
DD
DD
C
2
10 µF
C
2
10 µF
+5V
90%
+5V
90%
INPUT*
INPUT*
10%
0V
10%
0V
t
t
D1
D2
t
t
F
R
V
BOOST
V
BOOST
90%
90%
90%
90%
t
t
D1
D2
t
t
F
OUTPUT
OUTPUT
0V
R
10%
10%
10%
10%
0V
* 100kHz SQUARE WAVE, tr = tf < 10nsec
* 100kHz SQUARE WAVE, tr = tf < 10nsec
Figure 1. Inverting Driver Switching Time
Figure 2. Non-Inverting Driver Switching Time
4-274
TELCOM SEMICONDUCTOR, INC.
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
4
TC4626
TC4627
BOOSTER FUNCTION
The voltage booster is an unregulated voltage tripler
Pin 1 & 2 Waveforms
circuit. The tripler consists of three sets of internal switches
and three external capacitors. S1a and S1b charge capaci-
tor C1 to VDD potential. S2a and S2b add C1 potential to VDD
input to charge C2 to 2 x VDD. S3a and S3b add C1 potential
to C2 to charge C3 to 3 x VDD. The position of the switches
is controlled by the internal 4 phase clock.
3 x V
DD
2 x V
V
DD
PIN 2
VOLTAGE
DD
2 x V
DD
PIN 1
3 x V , V
VOLTAGE
6
3
DD BOOST
V
DD
0
6
C3
C2
S3a
S3b
2 x V
DD
S2a
S2b
8
2
(4 To 6V)
V
DD
ON
S1a
S1b
S1
S2
OFF
C1
ON
1
4
OFF
GND
ON
S3
OFF
Voltage Booster
Position of Switches
TELCOM SEMICONDUCTOR, INC.
4-275
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
TC4626
TC4627
TYPICAL CHARACTERISTICS
TC4626 V
S
vs. Frequency
OH
= 5V, Temperature = –55°C
TC4626 V
S
vs. Frequency
OH
V
V
= 5V, Temperature = 25°C
16
14
14
12
10
470pF
470pF
12
10
8
8
6
2200pF
1000pF
6
2200pF
1000pF
4
2
0
4
2
0
5
10
500 1,000 1,500 2,000 2,500 3,000 3,500
FREQUENCY (kHz)
500 1,000 1,500 2,000 2,500 3,000 3,500
FREQUENCY (kHz)
Delay Time vs. Temperature
TC4626 V
S
vs. Frequency
OH
V
= 4V, C
LOAD
= 1000pF
S
V
= 5V, Temperature = 125°C
100
80
14
12
10
Input = 0-5V;
T
& T <10nsec;
F
R
@ <20 kHz
470pF
TD2
60
40
8
6
TD1
2200pF 1000pF
4
2
TR
TF
20
0
0
5
500 1,000 1,500 2,000 2,500 3,000 3,500
FREQUENCY (kHz)
100 120
40 60 80
-40 -20
0
20
TEMPERATURE (°C)
Delay Time vs. Temperature
Delay Time vs. Temperature
V
= 5V, C = 1000 pF
LOAD
V
= 6V, C
= 1000 pF
S
S
LOAD
60
50
50
40
40
TD2
TD1
TD2
TD1
30
20
10
30
20
TR
TR
TF
TF
Input = 0-5V;
Input = 0-5V;
10
0
T
& T <10nsec;
F
T
& T <10nsec;
F
R
R
@ <20 kHz
@ <20 kHz
0
100 120
40 60 80
100
120
-40 -20
0
20
40 60 80
-40 -20
0
20
TEMPERATURE (°C)
TEMPERATURE (°C)
4-276
TELCOM SEMICONDUCTOR, INC.
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
4
TC4626
TC4627
TYPICAL CHARACTERISTICS (Cont.)
TC4626 V
vs. Frequency
TC4626 V
vs. Frequency
OH
= 5V, Temperature = -55°C
OH
= 5V, Temperature = 25°C
V
V
S
S
16
15
16
15
14
13
12
14
13
12
470 pF
1,000 pF
2,200 pF
470 pF
1,000 pF
11
10
11
10
9
8
9
8
2,200 pF
0
1
2
3
4
5
6
7
8
9
10
0
1
3
4
5
6
7
8
9
10
2
FREQUENCY x 100 kHz
FREQUENCY x 100 kHz
TC4626 V
vs. Frequency
OH
V
= 5V, Temperature = 125°C
S
16
15
14
13
12
11
10
470 pF
1,000 pF
9
8
2,200 pF
0
1
3
4
5
6
7
8
9
10
2
FREQUENCY x 100 kHz
TELCOM SEMICONDUCTOR, INC.
4-277
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