TC4429COA [TELCOM]
6A HIGH-SPEED MOSFET DRIVERS; 6A高速MOSFET驱动器
| 型号： | TC4429COA |
| 厂家： | 
TELCOM SEMICONDUCTOR, INC |
| 描述： | 6A HIGH-SPEED MOSFET DRIVERS |
| 文件： | 总5页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4
TC4420
TC4429
6A HIGH-SPEED MOSFET DRIVERS
FEATURES
GENERAL DESCRIPTION
■ Latch-Up Protected ............. Will Withstand > 1.5A
Reverse Output Current
■ Logic Input Will Withstand Negative Swing Up
to 5V
TheTC4420/4429are6A(peak),singleoutputMOSFET
drivers. The TC4429 is an inverting driver (pin-compatible
with the TC429), while the TC4420 is a non-inverting driver.
ThesedriversarefabricatedinCMOSforlowerpower, more
efficient operation versus bipolar drivers.
BothdeviceshaveTTL-compatibleinputs,whichcanbe
driven as high as VDD + 0.3V or as low as – 5V without upset
or damage to the device. This eliminates the need for
external level shifting circuitry and its associated cost and
size. The output swing is rail-to-rail ensuring better drive
voltage margin, especially during power up/power down
sequencing. Propagational delay time is only 55nsec (typ.)
and the output rise and fall times are only 25nsec (typ.) into
2500pF across the usable power supply range.
■ ESD Protected..................................................... 4kV
■ Matched Rise and Fall Times ......................25nsec
■ High Peak Output Current ......................... 6A Peak
■ Wide Operating Range ..........................4.5V to 18V
■ High Capacitive Load Drive .....................10,000 pF
■ Short Delay Time .................................. 55nsec Typ
■ Logic High Input, Any Voltage ............. 2.4V to VDD
■ Low Supply Current With Logic "1" Input ... 450µA
■ Low Output Impedance .................................... 2.5Ω
■ Output Voltage Swing to Within 25mV of Ground
or VDD
Unlike other drivers, the TC4420/4429 are virtually
latch-up proof. They replace three or more discrete compo-
nents saving PCB area, parts and improving overall system
reliability.
APPLICATIONS
■ Switch-Mode Power Supplies
■ Motor Controls
■ Pulse Transformer Driver
■ Class D Switching Amplifiers
ORDERING INFORMATION
Temp.
Range
Part No.
Logic
Package
FUNCTIONAL BLOCK DIAGRAM
TC4420CAT Noninverting 5-Pin TO-220
TC4420COA Noninverting 8-Pin SOIC
TC4420CPA Noninverting 8-Pin PDIP
TC4420EOA Noninverting 8-Pin SOIC
TC4420EPA Noninverting 8-Pin PDIP
0°C to +70°C
0°C to +70°C
V
DD
0°C to +70°C
TC4429
500 µA
300 mV
– 40°C to +85°C
– 40°C to +85°C
–25°C to +85°C
OUTPUT
TC4420IJA
Noninverting 8-Pin CerDIP
TC4420MJA Noninverting 8-Pin CerDIP – 55°C to +125°C
INPUT
GND
TC4429CAT Inverting
TC4429COA Inverting
TC4429CPA Inverting
TC4429EOA Inverting
TC4429EPA Inverting
5-Pin TO-220
8-Pin SOIC
8-Pin PDIP
8-Pin SOIC
8-Pin PDIP
0°C to +70°C
0°C to +70°C
TC4420
4.7V
0°C to +70°C
EFFECTIVE
INPUT
C = 38 pF
– 40°C to +85°C
– 40°C to +85°C
TC4429IJA
Inverting
8-Pin CerDIP – 25°C to +85°C
8-Pin CerDIP – 55°C to +125°C
PIN CONFIGURATIONS
TC4429MJA Inverting
TO-220-5
8-Pin DIP
8-Pin SOIC
V
V
V
V
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
DD
DD
DD
DD
INPUT
NC
OUTPUT INPUT
OUTPUT
OUTPUT
GND
TC4420
TC4429
TC4420
TC4429
TC4420
TC4429
OUTPUT
GND
NC
GND
GND
Tab is
Connected
to V
DD
NOTE: Duplicate pins must both be connected for proper operation.
TC4420/9-6 10/18/96
TELCOM SEMICONDUCTOR, INC.
4-225
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ............................................... – 5V to > VDD
Input Current (VIN > VDD) .........................................50mA
Power Dissipation, TA ≤ 70°C
PDIP ...............................................................730mW
SOIC ...............................................................470mW
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
Package Power Dissipation (TA ≤ 70°C)
Storage Temperature Range ................ – 65°C to +150°C
Operating Temperature (Chip) .............................. +150°C
Operating Temperature Range (Ambient)
C Version ............................................... 0°C to +70°C
I Version ........................................... – 25°C to +85°C
E Version .......................................... – 40°C to +85°C
M Version .......................................– 55°C to +125°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmay
affect device reliability.
5-Pin TO-220 (With Heat Sink) .........................1.60W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C
SOIC ............................................................. 4mW/°C
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedances (To Case)
5-Pin TO-220 RθJ-C ........................................ 10°C/W
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Voltage Range
Input Current
2.4
—
1.8
1.3
—
—
0.8
V
VIL
V
VIN (Max)
IIN
–5
VDD+0.3
10
V
0V ≤ VIN ≤ VDD
– 10
—
µA
Output
VOH
VOL
High Output Voltage
Low Output Voltage
See Figure 1
VDD – 0.025
—
—
2.1
1.5
6
—
0.025
2.8
2.5
—
V
V
Ω
Ω
A
A
See Figure 1
—
—
RO
Output Resistance, High
Output Resistance, Low
Peak Output Current
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
VDD = 18V (See Figure 5)
RO
—
IPK
—
IREV
Latch-Up Protection
Withstand Reverse Current
Duty Cycle ≤ 2%
t ≤ 300 µs
1.5
—
—
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1, CL = 2500 pF
Figure 1, CL = 2500 pF
Figure 1
—
—
—
—
25
25
55
55
35
35
75
75
nsec
nsec
nsec
nsec
tF
tD1
Delay Time
Delay Time
tD2
Figure 1
Power Supply
IS
Power Supply Current
Operating Input Voltage
VIN = 3V
VIN = 0V
—
—
0.45
55
1.5
150
mA
µA
VDD
4.5
—
18
V
4-226
TELCOM SEMICONDUCTOR, INC.
6A HIGH-SPEED MOSFET DRIVERS
4
TC4420
TC4429
ELECTRICAL CHARACTERISTICS:
Measured over operating temperature range with 4.5V ≤ VDD ≤ 18V,
unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Voltage Range
Input Current
2.4
—
—
—
—
—
—
0.8
V
VIL
V
VIN (Max)
IIN
– 5
– 10
VDD + 0.3
10
V
0V ≤ VIN ≤ VDD
µA
Output
VOH
High Output Voltage
Low Output Voltage
See Figure 1
VDD – 0.025
—
—
3
—
0.025
5
V
V
Ω
Ω
VOL
See Figure 1
—
—
—
RO
Output Resistance, High
Output Resistance, Low
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
RO
2.3
5
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1, CL = 2500 pF
Figure 1, CL = 2500 pF
Figure 1
—
—
—
—
32
34
50
65
60
60
nsec
nsec
nsec
nsec
tF
tD1
Delay Time
Delay Time
100
100
tD2
Figure 1
Power Supply
IS
Power Supply Current
Operating Input Voltage
VIN = 3V
VIN = 0V
—
—
0.45
60
3
400
mA
µA
VDD
4.5
—
18
V
NOTE: 1. Switching times guaranteed by design.
V
= 18V
DD
1µF
+5V
90%
1
8
INPUT
0.1µF
0.1µF
10%
0V
t
t
t
F
D1
D2
t
R
2
6
7
+18V
INPUT
OUTPUT
90%
90%
OUTPUT
0V
C
= 2500pF
10%
10%
L
TC4429
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10 nsec
4
5
Figure 1. Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
4-227
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
TC4420
TC4429
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
Fall Time vs. Supply Voltage
Rise and Fall Times vs. Temperature
120
100
80
60
40
20
0
50
C
= 2200 pF
L
V
DD
= 18V
100
40
30
20
10
0
C
= 10,000 pF
L
80
60
40
20
0
C
= 10,000 pF
L
t
FALL
t
RISE
C
C
= 4700 pF
= 2200 pF
C
C
= 4700 pF
= 2200 pF
L
L
L
L
5
7
9
11
(V)
13
15
5
7
9
V
11
(V)
13
15
–60
–20
20
60
(°C)
100
140
V
T
A
DD
DD
Propagation Delay Time
vs. Supply Voltage
Rise Time vs. Capacitive Load
Fall Time vs. Capacitive Load
100
80
65
60
55
50
45
40
35
100
80
60
40
60
40
V
= 5V
DD
V
= 5V
DD
t
t
D2
V
DD
= 12V
V
DD
= 12V
V
DD
= 18V
V
DD
= 18V
20
10
20
10
D1
1000
10,000
1000
10,000
4
6
8
10
12 14 16 18
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
SUPPLY VOLTAGE (V)
Propagation Delay Time
vs. Temperature
Supply Current vs. Capacitive Load
84
Supply Current vs. Frequency
50
40
30
20
10
0
1000
100
C
V
= 2200 pF
V
DD
= 15V
C = 2200 pF
L
L
= 18V
DD
18V
70
56
42
28
14
0
t
10V
5V
D2
t
D1
500 kHz
200 kHz
20 kHz
10
0
0
100
1000
10,000
0
100
1000
10,000
–60
–20
20
T
60
(°C)
100
140
CAPACITIVE LOAD (pF)
FREQUENCY (kHz)
A
4-228
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
4
TC4420
TC4429
TYPICAL CHARACTERISTICS (Cont.)
High-State Output Resistance
Low-State Output Resistance
5
2.5
2
100 mA
10 mA
4
100 mA
50 mA
50 mA
3
2
1.5
1
10 mA
5
7
9
11
(V)
13
15
5
7
9
11
(V)
13
15
V
V
DD
DD
Effect of Input Amplitude
on Propagation Delay
Total nA•S Crossover*
200
4
3
2
1
0
LOAD = 2200 pF
160
120
80
40
0
INPUT 2.4V
INPUT 3V
INPUT 5V
INPUT 8V AND 10V
5
6
7
8
9
10 11 12 13 14 15
(V)
5
6
7
8
9
10 11 12 13 14 15
V
SUPPLY VOLTAGE (V)
DD
The values on this graph represent
the loss seen by the driver during
one complete cycle. For a single
transition, divide the value by 2.
*
TELCOM SEMICONDUCTOR, INC.
4-229
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