TC4428ACPA [TELCOM]
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS; 1.5A双高速功率MOSFET驱动器
| 型号： | TC4428ACPA |
| 厂家： | 
TELCOM SEMICONDUCTOR, INC |
| 描述： | 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS |
| 文件： | 总5页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4
TC4426A
TC4427A
TC4428A
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
GENERAL DESCRIPTION
FEATURES
The TC4426A/4427A/4428A are improved versions of
the earlier TC426/427/428 family of buffer/drivers (with
which they are pin compatible). They will not latch up under
any conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise spiking (of
either polarity) occurs on the ground pin. They can accept,
without damage or logic upset, up to 500 mA of reverse
current (of either polarity) being forced back into their
outputs. All terminals are fully protected against up to 4 kV
of electrostatic discharge.
As MOSFET drivers, the TC4426A/4427A/4428A can
easily switch 1000 pF gate capacitances in under 30 ns, and
provide low enough impedances in both the ON and OFF
states to ensure the MOSFET's intended state will not be
affected, even by large transients.
■ High Peak Output Current ............................... 1.5A
■ Wide Operating Range ..........................4.5V to 18V
■ High Capacitive Load
Drive Capability ................. 1000 pF in 25 nsec Typ
■ Short Delay Time ................................. 30 nsec Typ
■ Matched Rise, Fall and Delay Times
■ Low Supply Current
— With Logic “1” Input ............................ 1 mA Typ
— With Logic “0” Input ......................... 100 µA Typ
■ Low Output Impedance ................................ 7Ω Typ
■ Latch-Up Protected: Will Withstand 0.5A
Reverse Current
■ Input Will Withstand Negative Inputs Up to 5V
■ ESD Protected....................................................4 kV
■ Pinout Same as TC426/TC427/TC428
ORDERING INFORMATION
PIN CONFIGURATIONS
Part No.
Package
Temp. Range
NC
1
2
3
4
NC
IN A
GND
IN B
1
2
3
4
NC
IN A
GND
IN B
1
2
3
4
8
7
6
5
8
7
6
5
NC
8
7
6
5
NC
NC
IN A
GND
TC4426ACOA
TC4426ACPA
TC4426AEOA
TC4426AEPA
TC4426AMJA
8-Pin SOIC
0°C to +70°C
0°C to +70°C
OUT A
OUT A
OUT A
TC4426A
TC4427A
TC4428A
V
V
V
DD
DD
8-Pin Plastic DIP
8-Pin SOIC
DD
OUT B
OUT B
IN B
OUT B
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
2
7
5
8-Pin Plastic DIP
8-Pin CerDIP
2,4
7,5
2,4
7,5
4
INVERTING
NONINVERTING
TC4427ACOA
TC4427ACPA
TC4427AEOA
TC4427AEPA
TC4427AMJA
8-Pin SOIC
0°C to +70°C
0°C to +70°C
DIFFERENTIAL
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
8-Pin Plastic DIP
8-Pin SOIC
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
8-Pin Plastic DIP
8-Pin CerDIP
FUNCTIONAL BLOCK DIAGRAM
V
DD
TC4428ACOA
TC4428ACPA
TC4428AEOA
TC4428AEPA
TC4428AMJA
8-Pin SOIC
0°C to +70°C
0°C to +70°C
INVERTING
OUTPUTS
8-Pin Plastic DIP
8-Pin SOIC
2 mA
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
8-Pin Plastic DIP
8-Pin CerDIP
300 mV
OUTPUT
NONINVERTING
OUTPUTS
INPUT
4.7V
TC4426A/TC4427A/TC4428A
GND
EFFECTIVE INPUT
C = 12 pF
NOTES: 1. TC4426A has 2 inverting drivers; TC4427A has 2 noninverting drivers.
2. TC4428A has one inverting and one noninverting driver.
3. Ground any unused driver input.
TC4426A/7A/8A-9 10/21/96
TELCOM SEMICONDUCTOR, INC.
4-251
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426A
TC4427A
TC4428A
Operating Temperature Range
ABSOLUTE MAXIMUM RATINGS*
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B .. (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmay
affect device reliability.
ELECTRICAL CHARACTERISTICS:
Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless
otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
—
—
—
—
V
VIL
0.8
V
IIN
– 0V ≤ VIN ≤ VDD
TA = 25°C
– 40°C ≤ TA ≤ 85°C
– 1
– 10
—
—
1
10
µA
Output
VOH
High Output Voltage
Low Output Voltage
Output Resistance
DC Test
DC Test
VDD – 0.025
—
—
—
—
V
V
Ω
VOL
0.025
RO
VDD = 18V, IO = 10mA TA = 25°C
0°C ≤ TA ≤ 70°C
—
—
—
7
7
8
9
10
11
– 40° ≤ TA ≤ 85°C
IPK
Peak Output Current
Latch-Up Protection
Withstand Reverse Current t ≤ 300µsec
VDD = 18V
—
1.5
—
—
—
A
A
IREV
Duty Cycle ≤ 2%
VDD = 18V
0.5
Switching Time (Note 1)
tR
Rise Time
Figure 1
Figure 1
Figure 1
Figure 1
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
25
27
29
35
40
40
nsec
nsec
nsec
nsec
tF
Fall Time
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
25
27
29
35
40
40
tD1
Delay Time
Delay Time
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
30
33
35
35
40
45
tD2
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
30
33
35
35
40
45
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs) VDD = 18V
VIN = 0V (Both Inputs)
—
—
1.0
0.1
2.0
0.2
mA
NOTE: 1. Switching times are guaranteed by design.
4-252
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
4
TC4426A
TC4427A
TC4428A
+5V
90%
INPUT
10%
0V
t
t
V
= 18V
DD
D1
D2
t
F
t
R
V
DD
90%
90%
4.7 µF
0.1 µF
OUTPUT
0V
6
10%
10%
7
5
2
4
INPUT
OUTPUT
= 1000 pF
Inverting Driver
C
L
+5V
90%
INPUT
10%
3
0V
V
DD
90%
90%
t
t
D1
D2
INPUT: 100 kHz, square wave,
= t ≤ 10nsec
t
t
F
OUTPUT
0V
R
t
RISE FALL
10%
10%
Noninverting Driver
Figure 1. Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
4-253
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426A
TC4427A
TC4428A
TYPICAL CHARACTERISTICS
Fall Time vs. Supply Voltage
Temperature = 25°C
Rise Time vs. Supply Voltage
Temperature = 25°C
100
80
100
80
C
C
= 2200pF
L
C
= 2200pF
= 1500pF
L
= 1500pF
L
C
L
60
40
60
40
C
= 1000pF
C
= 1000pF
L
L
C
= 470pF
L
C
= 470pF
L
20
0
20
0
C
= 100pF
L
C
= 100pF
L
5.0
5.0
7.5
10.0
12.5
(Volts)
15.0
17.5
7.5
10.0
12.5
(Volts)
15.0
17.5
V
V
DD
DD
Effect of Input Amplitude on Delay
= 10V C = 1000pF
Propagation Delay Time vs. Supply Voltage
V
C = 1000pF
L
DD
L
110
60
55
50
45
40
35
t
D1
100
90
80
70
60
50
40
30
20
t
D1
t
D2
t
D2
30
25
20
1
2
4
5
6
7
8
9
3
10
5
15
20
0
V
(Volts)
V
(Volts)
DD
DD
Rise and Fall Times vs. Temperature
= 18V C = 1000pF
Propagation Delay Time vs.Temperature
= 18V C = 1000pF
V
V
DD
DD
L
L
28
26
24
22
20
18
40
35
30
25
t
D2
t
t
20
15
R
16
14
D1
t
F
-100
-50
0
150
100
-100
-50
0
150
50
100
50
TEMPERATURE (°C)
TEMPERATURE (°C)
High-State Output Resistance
Low State Output Resistance
30
25
20
30
25
20
T
A
= 125°C
= 125°C
T
A
= 125°C
= 125°C
TA
15
10
15
10
TA
5
0
5
0
10
10
(Volts)
5
15
20
5
15
20
0
0
V
(Volts)
DD
V
DD
4-254
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
4
TC4426A
TC4427A
TC4428A
TYPICAL CHARACTERISTICS (Cont.)
Supply Current vs. Frequency
Supply Current vs. Capacitance Load
= 18v
V
= 18v
V
DD
DD
60
50
60
50
2MHz
C
= 2200pF
L
C
= 1500pF
900MHz
L
40
30
20
40
30
20
10
0
C
= 1000pF
C
= 100pF
600MHz
L
L
200MHz
20MHz
10
0
0
0
500
1000
1500
2000
2500
500
1000
1500
2000
2500
C (pF)
L
FREQUENCY (KHz)
Supply Current vs. Frequency
Supply Current vs.Capacitance Load
V
DD
= 12v
V
= 12v
DD
80
70
60
50
40
80
C
C
C
= 2200pF
= 1500pF
L
70
60
2MHz
L
50
40
30
20
10
0
= 1000pF
= 100pF
L
900MHz
600MHz
30
C
L
20
10
0
200MHz
20MHz
0
1000
1500
2000
2500
500
0
1000
500
1500
2000
2500
FREQUENCY (KHz)
C (pF)
L
Supply Current vs. Capacitance Load
= 6v
Supply Current vs. Frequency
= 6v
V
V
DD
DD
40
35
30
25
40
35
30
25
2MHz
C
C
= 2200pF
= 1500pF
L
L
20
15
10
C
= 1000pF
L
900MHz
600MHz
15
10
5
C
= 100pF
L
5
0
200MHz
20MHz
0
0
1000
1500
2000
2500
0
1000
1500
2000
2500
500
500
FREQUENCY (KHz)
C (pF)
L
Quiescent Supply Current vs. Voltage
Quiescent Supply Current vs. Temperature
TEMPERATURE = 25°C
V
= 18v
DD
900
800
700
600
1100
1000
900
Both inputs = 0
Both inputs = 1
800
700
600
500
400
300
200
500
400
300
200
100
0
Both inputs = 0
100
0
Both inputs = 0
5
15
20
0
50
100
150
10
-100
-50
0
V
(Volts)
TEMPERATURE = (°C)
DD
TELCOM SEMICONDUCTOR, INC.
4-255
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