A5030UB6 [TECCOR]

Silicon Surge Protector, 30A, MODIFIED MS-013, SOIC-6;
A5030UB6
型号: A5030UB6
厂家: TECCOR ELECTRONICS    TECCOR ELECTRONICS
描述:

Silicon Surge Protector, 30A, MODIFIED MS-013, SOIC-6

光电二极管
文件: 总70页 (文件大小:698K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2 Data Sheets  
This section presents complete electrical specifications for Teccor’s SIDACtor solid state  
overvoltage protection devices.  
DO-214AA Package Symbolization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3  
DO-214AA  
SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4  
MicroCapacitance (MC) SC SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-6  
MicroCapacitance (MC) SA SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-8  
High Surge Current (D-rated) SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10  
Compak Two-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-12  
Ethernet/10BaseT/100BaseT Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-14  
TO-92  
SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-16  
MicroCapacitance (MC) SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-18  
Modified MS-013 (Six-pin Surface Mount)  
Balanced Three-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-20  
Multiport SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-22  
Multiport Balanced SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-24  
Modified TO-220  
SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-26  
Two-chip SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-28  
Two-chip MicroCapacitance (MC) SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-30  
Balanced Three-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-32  
Balanced Three-chip MicroCapacitance (MC) SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . 2-34  
LCAS  
LCAS Asymmetrical Multiport Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-36  
LCAS Asymmetrical Discrete Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-38  
SIP Hybrid Overvoltage and Overcurrent Protector  
Four-Port Balanced Three-chip Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-40  
Four-Port Longitudinal Two-chip Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-42  
Four-Port Metallic Line Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-44  
SLICs  
Fixed Voltage SLIC Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-46  
Twin SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-48  
Multiport SLIC Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-50  
Battrax  
Battrax SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-52  
Battrax Dual Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-54  
Battrax Dual Positive/Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-56  
Battrax Quad Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-58  
CATVs  
CATV and HFC SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-60  
High Surge Current SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-62  
CATV Line Amplifiers/Power Inserters SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-64  
TeleLink Fuse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-66  
Acronyms: CATV  
Community Antenna TV  
Hybrid Fiber Coax  
HFC  
LCAS  
SIP  
Line Circuit Access Switch  
Single In-line Package  
Subscriber Line Interface Circuit  
SLIC  
© 2002 Teccor Electronics  
2-1  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
DO-214AA Package Symbolization  
DO-214AA Package Symbolization  
Part Number  
Part Number  
Part Number  
Catalog  
Symbolized  
P-8A  
Catalog  
Symbolized  
P11B  
Catalog  
P2300SD  
P2300SC MC  
P2500SA  
P2500SB  
P2500SC  
P2500SD  
P2500SC MC  
P2600SA  
P2600SB  
P2600SC  
P2600SD  
P2600SC MC  
P3002CB  
P3002SB  
P3100SA  
P3100SB  
P3100SC  
P3100SD  
P3100SC MC  
P3500SA  
P3500SB  
P3500SC  
P3500SD  
P3500SC MC  
P6002CB  
B1100CA  
B1100CC  
B1160CA  
B1160CC  
B1200CA  
B1200CC  
B2050CA  
B2050CC  
Symbolized  
P23D  
P23CM  
P25A  
P0080SA  
P0080SB  
P0080SC  
P0080SD  
P0080SC MC  
P0300SA  
P0300SB  
P0300SC  
P0300SD  
P0300SC MC  
P0640SA  
P0640SB  
P0640SC  
P0640SD  
P0640SC MC  
P0641CA2  
P0641SA  
P0641SC  
P0720SA  
P0720SB  
P0720SC  
P0720SD  
P0720SC MC  
P0721CA2  
P0721SA  
P0721SC  
P0900SA  
P0900SB  
P0900SC  
P0900SD  
P0900SC MC  
P0901CA2  
P0901SA  
P0901SC  
P1100SA  
P1100SB  
P1100SC  
P1100SD  
P1100SC MC  
P1101CA2  
P1101SA  
P-8B  
P-8C  
P-8D  
P11C  
P11D  
P11CM  
P02A  
P01A  
P01C  
P12A  
P12B  
P12C  
P12D  
P12CM  
P13A  
P25B  
P-8CM  
P03A  
P03B  
P03C  
P03D  
P03CM  
P06A  
P06B  
P06C  
P06D  
P06CM  
P62A  
P61A  
P61C  
P07A  
P07B  
P07C  
P07D  
P07CM  
P72A  
P71A  
P71C  
P09A  
P09B  
P09C  
P09D  
P09CM  
P92A  
P91A  
P91C  
P11A  
P25C  
P25D  
P25CM  
P26A  
P1101SC  
P1200SA  
P1200SB  
P1200SC  
P1200SD  
P1200SC MC  
P1300SA  
P1300SB  
P1300SC  
P1300SD  
P1300SC MC  
P1500SA  
P1500SB  
P1500SC  
P1500SD  
P1500SC MC  
P1800SA  
P1800SB  
P1800SC  
P1800SD  
P1800SC MC  
P2000SA  
P2000SB  
P2000SC  
P2000SD  
P2000SC MC  
P2300SA  
P2300SB  
P2300SC  
P26B  
P26C  
P26D  
P26CM  
P30B  
P30B  
P31A  
P13B  
P13C  
P13D  
P13CM  
P15A  
P31B  
P31C  
P31D  
P31CM  
P35A  
P15B  
P15C  
P15D  
P15CM  
P18A  
P35B  
P35C  
P35D  
P35CM  
P60B  
B10A  
B10C  
B16A  
B16C  
B12A  
B20C  
B20A  
P18B  
P18C  
P18D  
P18CM  
P20A  
P20B  
P20C  
P20D  
P20CM  
P23A  
P23B  
P23C  
B20C  
Note: Date code is located below the symbolized part number.  
© 2002 Teccor Electronics  
2 - 3  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
SIDACtor Device  
SIDACtor Device  
DO-214AA SIDACtor solid state protection devices protect telecommunications equipment  
such as modems, line cards, fax machines, and other CPE.  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(formerly known as FCC Part 68).  
Electrical Parameters  
Part  
VDRM  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P0080S_  
P0300S_  
P0640S_  
P0720S_  
P0900S_  
P1100S_  
P1300S_  
P1500S_  
P1800S_  
P2300S_  
P2600S_  
P3100S_  
P3500S_  
6
25  
58  
65  
75  
90  
120  
140  
170  
190  
220  
275  
320  
25  
40  
77  
88  
98  
130  
160  
180  
220  
260  
300  
350  
400  
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
50  
50  
100  
110  
50  
50  
50  
40  
40  
40  
30  
30  
30  
30  
30  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
* For individual “SA”, “SB”, and “SC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB” product. “SC” capacitance is  
approximately 2x the listed value. The off-state capacitance of the P0080SB is equal to the “SC” device.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 4  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
SIDACtor Device  
Thermal Considerations  
Package  
DO-214AA  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t – Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 5  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
MicroCapacitance (MC) SC SIDACtor Device  
MicroCapacitance (MC) SC SIDACtor Device  
The DO-214AA SC MC SIDACtor series is intended for applications sensitive to load  
values. Typically, high speed connections require a lower capacitance. CO values for the  
MicroCapacitance device are 40% lower than a standard SC part.  
This MC SIDACtor series is used to enable equipment to meet various regulatory  
requirements including GR 1089, IEC 60950, UL 60950, and TIA/EIA-IS-968 (formerly  
known as FCC Part 68). Contact factory regarding ITU K.20, K.21, and K.45.  
Electrical Parameters  
Part  
VDRM  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P0080SC MC **  
P0300SC MC **  
P0640SC MC  
P0720SC MC  
P0900SC MC  
P1100SC MC  
P1300SC MC  
P1500SC MC  
P1800SC MC  
P2300SC MC  
P2600SC MC  
P3100SC MC  
P3500SC MC  
6
25  
58  
65  
75  
90  
120  
140  
170  
190  
220  
275  
320  
25  
40  
77  
88  
98  
130  
160  
180  
220  
260  
300  
350  
400  
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
50  
50  
55  
35  
60  
60  
60  
50  
50  
50  
40  
40  
40  
40  
40  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
* For surge ratings, see table below.  
** Contact factory for release date.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
VDRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
C
500  
400  
200  
150  
100  
50  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 6  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
MicroCapacitance (MC) SC SIDACtor Device  
Thermal Considerations  
Package  
DO-214AA  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
I
S  
I
H
Waveform = tr x td  
I
DRM  
50  
0
-V  
+V  
Half Value  
VDRM  
VT  
VS  
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 7  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
MicroCapacitance (MC) SA SIDACtor Device  
MicroCapacitance (MC) SA SIDACtor Device  
The DO-214AA SA MC SIDACtor series is intended for applications sensitive to load  
values. Typically, high speed connections require a lower capacitance. CO values for the  
MicroCapacitance device are 40% lower than a standard SA part.  
This MC SIDACtor series is used to enable equipment to meet various regulatory  
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/  
EIA-IS-968 (formerly known as FCC Part 68).  
Electrical Parameters  
Part  
VDRM  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P0080SA MC  
P0300SA MC  
6
25  
25  
40  
4
4
5
5
800  
800  
2.2  
2.2  
50  
50  
45  
25  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
150  
150  
90  
50  
45  
20  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 8  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
MicroCapacitance (MC) SA SIDACtor Device  
Thermal Considerations  
Package  
DO-214AA  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
I
S  
I
H
Waveform = tr x td  
I
DRM  
50  
0
-V  
+V  
Half Value  
VDRM  
VT  
VS  
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 9  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
High Surge Current (D-rated) SIDACtor Device  
High Surge Current (D-rated) SIDACtor Device  
DO-214AA SIDACtor solid state protection devices with a D surge rating protect  
telecommunications equipment such as modems, line cards, fax machines, and other CPE.  
These SIDACtor devices withstand simultaneous surges incurred in GR 1089 lightning  
tests. (See "First Level Lightning Surge Test" on page 4-5.) Surge ratings are twice that of a  
device with a C surge rating. This allows a discrete surface mount version of Teccor’s  
patented “Y” configuration. (US Patent 4,905,119)  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(formerly known as FCC Part 68).  
Electrical Parameters  
Part  
VDRM  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P0080SD **  
P0300SD **  
P0640SD **  
P0720SD **  
P0900SD **  
P1100SD  
P1300SD  
P1500SD  
P1800SD  
P2300SD  
P2600SD  
P3100SD  
P3500SD  
6
25  
58  
65  
75  
90  
120  
140  
170  
190  
220  
275  
320  
25  
40  
77  
88  
98  
130  
160  
180  
220  
260  
300  
350  
400  
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
200  
220  
100  
100  
100  
80  
80  
80  
60  
60  
60  
60  
60  
* For surge ratings, see table below.  
** Contact factory for release date.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
D
1000  
800  
400  
300  
200  
50  
1000  
http://www.teccor.com  
+1 972-580-7777  
2 - 10  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
High Surge Current (D-rated) SIDACtor Device  
Thermal Considerations  
Package  
DO-214AA  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 11  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Compak Two-chip SIDACtor Device  
Compak Two-chip SIDACtor Device  
The modified DO-214AA SIDACtor device provides low-cost, longitudinal protection.  
1
(T)  
2
(G)  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
3
including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(R)  
(formerly known as FCC Part 68).  
Electrical Parameters  
VDRM  
VS  
VDRM  
Volts  
VS  
CO  
pF  
Volts  
Volts  
Volts  
Part  
VT  
IDRM  
IS  
IT  
IH  
Number  
Pins1-2, 2-3  
Pins 1-3  
Volts  
µAmps  
mAmps Amps mAmps Pins 1-3  
P3002CA  
P6002CA  
140  
275  
180  
350  
280  
550  
360  
700  
4
4
5
5
800  
800  
1
1
120  
120  
15  
15  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured between Pins 1-3 at 1 MHz with a 2 V bias.  
UL 60950 creepage requirements must be considered.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
150  
150  
90  
50  
45  
20  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 12  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Compak Two-chip SIDACtor Device  
Thermal Considerations  
Package  
Modified DO-214AA  
Pin 3  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
85  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
Pin 1  
Pin 2  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 13  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Ethernet/10BaseT/100BaseT Protector  
Ethernet/10BaseT/100BaseT Protector  
The DO-214AA SIDACtor Ethernet protection series is intended for applications sensitive to  
load values. Typically, high speed connections require a lower capacitance. CO values are  
40% lower than standard devices.  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(formerly known as FCC Part 68).  
Electrical Parameters  
Part  
VDRM  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P0642S_  
P0722S_  
P0902S_  
P1102S_  
P3002S_  
58  
65  
75  
90  
280  
77  
88  
98  
130  
360  
4
4
4
4
4
5
5
5
5
5
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
150  
150  
150  
150  
150  
25  
25  
25  
20  
15  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
A
B**  
Amps/µs  
150  
250  
150  
250  
90  
150  
50  
100  
45  
80  
20  
30  
500  
500  
** Contact factory for release date of B-rated devices.  
http://www.teccor.com  
+1 972-580-7777  
2 - 14  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Ethernet/10BaseT/100BaseT Protector  
Thermal Considerations  
Package  
DO-214AA  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 15  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
SIDACtor Device  
SIDACtor Device  
TO-92 SIDACtor solid state protection devices protect telecommunications equipment such  
as modems, line cards, fax machines, and other CPE.  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(formerly known as FCC Part 68)  
.
Electrical Parameters  
Part  
VDRM  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
6
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P0080E_  
P0300E_  
P0640E_  
P0720E_  
P0900E_  
P1100E_  
P1300E_  
P1500E_  
P1800E_  
P2300E_  
P2600E_  
P3100E_  
P3500E_  
25  
40  
77  
88  
98  
130  
160  
180  
220  
260  
300  
350  
400  
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
50  
50  
100  
110  
50  
50  
50  
40  
40  
40  
30  
30  
30  
30  
30  
25  
58  
65  
75  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
90  
120  
140  
170  
190  
220  
275  
320  
* For individual “EA”, “EB”, and “EC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “EA” and “EB” product. “EC” capacitance is  
approximately 2x the listed value. The off-state capacitance of the P0080EB is equal to the “EC” device.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 16  
© 2002 Teccor Electronics  
SIDACtor Data Book and Design Guide  
®
SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
TO-92  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 17  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
MicroCapacitance (MC) SIDACtor Device  
MicroCapacitance (MC) SIDACtor Device  
The TO-92 MC SIDACtor series is intended for applications sensitive to load values.  
Typically, high speed connections require a lower capacitance. CO values for MC devices  
are 40% lower than a standard EC part.  
This MC SIDACtor series is used to enable equipment to meet various regulatory  
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/  
EIA-IS-968 (formerly known as FCC Part 68) without the need of series resistors.  
Electrical Parameters  
Part  
VDRM  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P0640EC MC  
P1500EC MC  
P2600EC MC  
P3100EC MC  
58  
77  
4
4
4
4
5
5
5
5
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
150  
150  
150  
150  
60  
50  
40  
40  
140  
220  
275  
180  
300  
350  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
C
500  
400  
200  
150  
100  
50  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 18  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
MicroCapacitance (MC) SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
TO-92  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 19  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Balanced Three-chip SIDACtor Device  
Balanced Three-chip SIDACtor Device  
This balanced protector is a surface mount alternative to the modified TO-220 package.  
1
2
3
6
5
4
Based on a six-pin surface mount SOIC package, it uses Teccor’s patented “Y”  
(US Patent 4,905,119) configuration. It is available in surge current ratings up to 500 A.  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(formerly known as FCC Part 68).  
Electrical Parameters  
VDRM  
VS  
VDRM  
Volts  
VS  
Volts  
Volts  
Volts  
Part  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Pins 1-3, 1-4  
Pins 3-4  
Volts  
µAmps mAmps Amps mAmps  
P1553U_  
P1803U_  
P2103U_  
P2353U_  
P2703U_  
P3203U_  
P3403U_  
P5103U_  
A2106U_ **  
A5030U_ **  
130  
150  
170  
200  
230  
270  
300  
420  
170  
400  
180  
210  
250  
270  
300  
350  
400  
600  
250  
550  
130  
150  
170  
200  
230  
270  
300  
420  
50  
180  
210  
250  
270  
300  
350  
400  
600  
80  
8
8
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
150  
150  
150  
150  
150  
150  
150  
150  
120  
150  
40  
40  
40  
40  
30  
30  
30  
30  
40  
30  
270  
350  
* For individual “UA”, “UB”, and “UC” surge ratings, see table below.  
** Asymmetrical  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured between Pins 1-3 and 1-4 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”  
and “UC” capacitance is approximately 2x higher.  
Device is designed to meet balance requirements of GTS 8700 and GR 974.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 20  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Balanced Three-chip SIDACtor Device  
Thermal Considerations  
Package  
Modified MS-013  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +125  
-65 to +150  
60  
Unit  
°C  
°C  
6
5
4
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
1
2
3
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 21  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Multiport SIDACtor Device  
Multiport SIDACtor Device  
The multiport line protector is an integrated multichip solution for protecting multiple  
twisted pair from overvoltage conditions. Based on a six-pin surface mount SOIC  
package, it is equivalent to four discrete DO-214AA or two TO-220 packages. Available  
in surge current ratings up to 500 A, the multiport line protector is ideal for densely  
populated, high-speed line cards that cannot afford PCB inefficiencies or the use of  
series power resistors.  
1
(R )  
6
(T )  
1
2
5
(G )  
2
(G )  
2
1
3
(T )  
4
(R )  
1
2
SIDACtor devices are used to enable equipment to meet various regulatory  
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and  
TIA/EIA-IS-968 (formerly known as FCC Part 68).  
Electrical Parameters  
VDRM  
VS  
VDRM  
Volts  
Pins 1-3, 4-6  
12  
50  
116  
130  
150  
180  
240  
280  
340  
380  
440  
550  
640  
VS  
Volts  
Part  
Volts  
Volts  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
P0084U_  
P0304U_  
P0644U_  
P0724U_  
P0904U_  
P1104U_  
P1304U_  
P1504U_  
P1804U_  
P2304U_  
P2604U_  
P3104U_  
P3504U_  
Pins 1-2, 3-2, 4-5, 6-5  
6
25  
58  
65  
75  
90  
120  
140  
170  
190  
220  
275  
320  
Volts  
µAmps  
mAmps Amps mAmps  
25  
40  
77  
88  
98  
130  
160  
180  
220  
260  
300  
350  
400  
50  
80  
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
50  
50  
100  
110  
50  
50  
50  
40  
40  
40  
30  
30  
30  
30  
30  
154  
176  
196  
260  
320  
360  
440  
520  
600  
700  
800  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
* For individual “UA”, “UB”, and “UC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
IPP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
VDRM is measured at IDRM, and VS is measured at 100 V/µs.  
Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”  
and “UC” capacitance is approximately 2x higher.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 22  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Multiport SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
60  
Unit  
°C  
°C  
Modified MS-013  
6
5
4
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
1
2
3
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 23  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Multiport Balanced SIDACtor Device  
Multiport Balanced SIDACtor Device  
This multiport balanced protector is a surface mount alternative to the modified TO-220  
1
2
3
6
5
4
package. It is based on a six-pin surface mount SOIC package and uses Teccor’s  
patented “Y” (US Patent 4,905,119) configuration. It is available in surge current ratings up  
to 500 A.  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(formerly known as FCC Part 68).  
Electrical Parameters — Symmetrical  
VDRM  
VS  
VDRM  
VS  
CO  
pF  
Volts  
Volts  
Volt  
Volts  
Part  
VT  
IDRM  
IS  
IT  
IH  
Number *  
Pins 1-2, 2-3, 1-3 Pins 4-5, 5-6, 4-6  
Volts  
µAmps  
mAmps Amps mAmps Pins 3-2, 6-5, 1-2, 4-5  
P1556U_  
P1806U_  
P2106U_  
P2356U_  
P2706U_  
P3206U_  
P3406U_  
P5106U_  
130  
150  
170  
200  
230  
270  
300  
420  
180  
210  
250  
270  
300  
350  
400  
600  
130  
150  
170  
200  
230  
270  
300  
420  
180  
210  
250  
270  
300  
350  
400  
600  
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
150  
150  
150  
150  
150  
150  
150  
150  
50  
50  
40  
40  
40  
40  
40  
40  
Electrical Parameters — Asymmetrical  
VDRM  
VS  
VDRM  
VS  
Volts  
Volts  
Volt  
Volts  
Part  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Pins 1-2, 2-3  
Pins 4-6, 1-3  
Volts  
µAmps  
mAmps Amps mAmps  
A2106U_6  
A5030U_6  
170  
400  
250  
550  
50  
270  
80  
350  
3.5  
3.5  
5
5
800  
800  
2.2  
2.2  
120  
150  
40  
30  
* For individual “UA”, “UB”, and “UC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”  
and “UC” capacitance is approximately 10 pF higher.  
Device is designed to meet balance requirements of GTS 8700 and GR 974.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 24  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Multiport Balanced SIDACtor Device  
Thermal Considerations  
Package  
Modified MS-013  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +125  
-65 to +150  
60  
Unit  
°C  
°C  
6
5
4
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
1
2
3
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 25  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
SIDACtor Device  
SIDACtor Device  
The modified TO-220 Type 61 SIDACtor solid state protection device can be used in  
telecommunication protection applications that do not reference earth ground.  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(formerly known as FCC Part 68).  
Electrical Parameters  
Part  
VDRM  
Volts  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P2000AA61  
P2200AA61  
P2400AA61  
P2500AA61  
P3000AA61  
P3300AA61  
180  
200  
220  
240  
270  
300  
220  
240  
260  
290  
330  
360  
4
4
4
4
4
4
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
150  
150  
150  
150  
150  
150  
30  
30  
30  
30  
30  
30  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
0.2x310 µs  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
5x320 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
20  
150  
150  
90  
50  
75  
45  
20  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 26  
© 2002 Teccor Electronics  
SIDACtor Data Book and Design Guide  
®
SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
50  
Unit  
°C  
°C  
Modified  
TO-220  
Type 61  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 27  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Two-chip SIDACtor Device  
Two-chip SIDACtor Device  
The two-chip modified TO-220 SIDACtor solid state device protects telecommunication  
equipment in applications that reference Tip and Ring to earth ground but do not require  
balanced protection.  
1
(T)  
2
(G)  
3
(R)  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(formerly known as FCC Part 68).  
Electrical Parameters  
VDRM  
VS  
VDRM  
Volts  
VS  
Volts  
Part  
Volts  
Volts  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
P0602A_  
P1402A_  
P1602A_  
P2202A_  
P2702A_  
P3002A_  
P3602A_  
P4202A_  
P4802A_  
P6002A_  
Pins 1-2, 3-2  
25  
58  
65  
90  
120  
140  
170  
190  
220  
275  
Pins 1-3  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
40  
77  
95  
130  
160  
180  
220  
250  
300  
350  
50  
80  
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
50  
110  
50  
50  
40  
40  
40  
40  
30  
30  
30  
116  
130  
180  
240  
280  
340  
380  
440  
550  
154  
190  
260  
320  
360  
440  
500  
600  
700  
150  
150  
150  
150  
150  
150  
150  
150  
150  
* For individual “AA”, “AB”, and “AC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “AA” and “AB”  
product. “AC” capacitance is approximately 2x the listed value.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 28  
© 2002 Teccor Electronics  
SIDACtor Data Book and Design Guide  
®
Two-chip SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
50  
Unit  
°C  
°C  
Modified  
TO-220  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
PIN 1  
PIN 3  
PIN 2  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 29  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Two-chip MicroCapacitance (MC) SIDACtor Device  
Two-chip MicroCapacitance (MC)  
SIDACtor Device  
The two-chip modified TO-220 MC SIDACtor solid state device protects telecommunication  
1
equipment in applications that reference Tip and Ring to earth ground but do not require  
(T)  
2
(G)  
balanced protection.  
3
(R)  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(formerly known as FCC Part 68).  
Electrical Parameters  
VDRM  
VS  
VDRM  
Volts  
VS  
Volts  
Volts  
Volts  
Part  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Pins 1-2, 3-2  
Pins 1-3  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P0602AC MC  
P1402AC MC  
P1602AC MC  
P2202AC MC  
P2702AC MC  
P3002AC MC  
P3602AC MC  
P4202AC MC  
P4802AC MC  
P6002AC MC  
25  
58  
65  
40  
77  
95  
130  
160  
180  
220  
250  
300  
350  
50  
80  
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
50  
60  
60  
60  
50  
50  
50  
40  
40  
40  
40  
116  
130  
180  
240  
280  
340  
380  
440  
550  
154  
190  
260  
320  
360  
440  
500  
600  
700  
150  
150  
150  
150  
150  
150  
150  
150  
150  
90  
120  
140  
170  
190  
220  
275  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
C
500  
400  
200  
150  
100  
50  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 30  
© 2002 Teccor Electronics  
SIDACtor Data Book and Design Guide  
®
Two-chip MicroCapacitance (MC) SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
50  
Unit  
°C  
°C  
Modified  
TO-220  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
PIN 1  
PIN 3  
PIN 2  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 31  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Balanced Three-chip SIDACtor Device  
Balanced Three-chip SIDACtor Device  
The three-chip modified TO-220 SIDACtor balanced solid state device is designed for  
1
3
telecommunication protection systems that reference Tip and Ring to earth ground.  
Applications include any piece of transmission equipment that requires balanced protection.  
This device is built using Teccor’s patented “Y” (US Patent 4,905,119) configuration.  
2
The SIDACtor device is used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20,K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(formerly known as FCC Part 68).  
Electrical Parameters  
VDRM  
VS  
VDRM  
Volts  
VS  
Volts  
Volts  
Volts  
Part  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Pins 1-2, 2-3  
Pins 1-3  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P1553A_  
P1803A_  
P2103A_  
P2353A_  
P2703A_  
P3203A_  
P3403A_  
P5103A_  
A2106A_ **  
A5030A_ **  
130  
150  
170  
200  
230  
270  
300  
420  
170  
400  
180  
210  
250  
270  
300  
350  
400  
600  
250  
550  
130  
150  
170  
200  
230  
270  
300  
420  
50  
180  
210  
250  
270  
300  
350  
400  
600  
80  
8
8
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
150  
150  
150  
150  
150  
150  
150  
150  
120  
150  
40  
40  
40  
40  
30  
30  
30  
30  
40  
30  
270  
350  
* For individual “AA”, “AB”, and “AC” surge ratings, see table below.  
** Asymmetrical  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “AA” product. “AB”  
and “AC” capacitance is approximately 2x the listed value.  
Device is designed to meet balance requirements of GTS 8700 and GR 974.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 32  
© 2002 Teccor Electronics  
SIDACtor Data Book and Design Guide  
®
Balanced Three-chip SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
50  
Unit  
°C  
°C  
Modified  
TO-220  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
PIN 1  
PIN 3  
PIN 2  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 33  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Balanced Three-chip MicroCapacitance (MC) SIDACtor Device  
Balanced Three-chip MicroCapacitance (MC)  
SIDACtor Device  
The balanced three-chip TO-220 MC SIDACtor solid state device protects telecommunica-  
tion equipment in high-speed applications that are sensitive to load values and that require  
a lower capacitance. CO values for the MC are 40% lower than a standard AC part.  
1
3
2
This MC SIDACtor series is used to enable equipment to meet various regulatory  
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and  
TIA/EIA-IS-968 (formerly known as FCC Part 68) without the need of series resistors.  
Electrical Parameters  
VDRM  
VS  
VDRM  
Volts  
VS  
Volts  
Volts  
Volts  
Part  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Pins 1-2, 2-3  
Pins 1-3  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P1553AC MC  
P1803AC MC  
P2103AC MC  
P2353AC MC  
P2703AC MC  
P3203AC MC  
P3403AC MC  
P5103AC MC  
130  
150  
170  
200  
230  
270  
300  
420  
180  
210  
250  
270  
300  
350  
400  
600  
130  
150  
170  
200  
230  
270  
300  
420  
180  
210  
250  
270  
300  
350  
400  
600  
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
150  
150  
150  
150  
150  
150  
150  
150  
40  
40  
40  
40  
30  
30  
30  
30  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.  
Device is designed to meet balance requirements of GTS 8700 and GR 974.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
C
500  
400  
200  
150  
100  
50  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 34  
© 2002 Teccor Electronics  
SIDACtor Data Book and Design Guide  
®
Balanced Three-chip MicroCapacitance (MC) SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
50  
Unit  
°C  
°C  
Modified  
TO-220  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
PIN 1  
PIN 3  
PIN 2  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 35  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
LCAS Asymmetrical Multiport Device  
LCAS Asymmetrical Multiport Device  
This is an integrated multichip solution for protecting multiple twisted pair from  
1
(R )  
6
(T )  
overvoltage conditions. Based on a six-pin surface mount SOIC package, it is  
equivalent to four discrete DO-214AA or two TO-220 packages. Available in surge  
current ratings up to 500 A, the multiport line protector is ideal for densely populated  
line cards that cannot afford PCB inefficiencies or the use of series power resistors.  
1
2
5
(G )  
2
(G )  
2
1
3
(T )  
4
(R )  
For a diagram of an LCAS (Line Circuit Access Switch) application, see Figure 3.21.  
1
2
Electrical Parameters  
VDRM  
VS  
VDRM  
Volts  
Pins 1-2, 4-5  
180  
230  
VS  
CO  
pF  
Volts  
Part  
Volts  
Volts  
VT  
IDRM  
IS  
IT  
IH  
Number *  
A1220U_4  
A1225U_4  
Pins 3-2, 6-5  
100  
100  
Volts  
µAmps  
mAmps Amps mAmps  
Pins 3-2, 6-5, 1-2, 4-5  
130  
130  
220  
290  
4
4
5
5
800  
800  
2.2  
2.2  
120  
120  
30  
30  
* For individual “UA”, “UB”, and “UC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”  
and “UC” capacitance is approximately 2x higher.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 36  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
LCAS Asymmetrical Multiport Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +125  
-65 to +150  
60  
Unit  
°C  
°C  
Modified MS-013  
6
5
4
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
1
2
3
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 37  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
LCAS Asymmetrical Discrete Device  
LCAS Asymmetrical Discrete Device  
These DO-214AA SIDACtor devices are intended for LCAS (Line Circuit Access Switch)  
applications that require asymmetrical protection in discrete (individual) packages. They  
enable the protected equipment to meet various regulatory requirements including  
GR 1089, ITU K.20, K.21, K.45, IEG 60950, UL 60950, and TIA/EIA-IS-968.  
Electrical Parameters  
Part  
VDRM  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P1200S_  
P2000S_  
P2500S_  
100  
180  
230  
130  
220  
290  
4
4
4
5
5
5
800  
800  
800  
2.2  
2.2  
2.2  
120  
120  
120  
40  
30  
30  
* For individual “SA”, “SB”, and “SC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB”  
product. “SC” capacitance is approximately 10 pF higher.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 38  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
LCAS Asymmetrical Discrete Device  
Thermal Considerations  
Package  
DO-214AA  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +125  
-65 to +150  
60  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 39  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Four-Port Balanced Three-chip Protector  
Four-Port Balanced Three-chip Protector  
This hybrid Single In-line Package (SIP) protects four twisted pairs from overcurrent and  
overvoltage conditions. Comprised of twelve discrete DO-214AA SIDACtor devices and  
eight TeleLink surface mount fuses, it is ideal for densely populated line cards that cannot  
afford PCB inefficiencies or the use of series power resistors. Surge current ratings up to  
500 A are available.  
F2  
Z3  
F4  
Z6  
F6  
Z9  
F8  
Tip  
Gnd  
Ring  
2
3
4
5
Tip  
Gnd  
Ring  
7
8
9
10  
Tip  
12  
15  
Tip  
17  
20  
Z12  
Z11  
Z2  
Z5  
Z8  
Gnd 13  
Ring 14  
Gnd 18  
Ring 19  
Z10  
F7  
Z7  
F5  
Z1  
F1  
Z4  
F3  
1
6
11  
16  
Electrical Parameters  
VDRM  
VS  
Volts  
VDRM  
Volts  
VS  
Volts  
CO  
pF  
Volts  
Part  
Pins 2-3, 4-3, 7-8, 9-8,  
Pins 2-4, 7-9,  
VT  
IDRM  
IS  
IT  
IH  
Number *  
12-13, 14-13, 17-18, 19-18  
12-14, 17-19  
Volts  
µAmps mAmps  
Amps  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
mAmps Pins 1-3  
P1553Z_  
P1803Z_  
P2103Z_  
P2353Z_  
P2703Z_  
P3203Z_  
P3403Z_  
A2106Z_ **  
A5030Z_ **  
130  
150  
170  
200  
230  
270  
300  
170  
400  
180  
210  
250  
270  
300  
350  
400  
250  
550  
130  
150  
170  
200  
230  
270  
300  
50  
180  
210  
250  
270  
300  
350  
400  
80  
8
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
150  
150  
150  
150  
150  
150  
150  
120  
150  
40  
40  
40  
40  
30  
30  
30  
40  
30  
270  
350  
* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below.  
** Asymmetrical  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured between Pins 4-3 and Pins 2-3 at 1 MHz with a 2 V bias and is a typical value for “ZA” product.  
“ZB” and “ZC” capacitance is approximately 10 pF higher.  
Device is designed to meet balance requirements of GTS 8700 and GR 974.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 40  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Four-Port Balanced Three-chip Protector  
Thermal Considerations  
Package  
SIP  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
IS  
I
Waveform = tr x td  
H
I
DRM  
-V  
50  
0
+V  
Half Value  
VDRM  
VT  
VS  
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Waveform  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
-8  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 41  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Four-Port Longitudinal Two-chip Protector  
Four-Port Longitudinal Two-chip Protector  
This hybrid Single In-line Package (SIP) protects four twisted pairs from overcurrent and  
overvoltage conditions. Comprised of eight discrete DO-214AA SIDACtor devices and eight  
TeleLink surface mount fuses, it is ideal for densely populated line cards that cannot afford  
PCB inefficiencies or the use of series power resistors. Surge current ratings up to 500 A  
are available.  
F2  
F4  
Z4  
F6  
Z6  
F8  
Tip  
Gnd  
Ring  
2
3
4
5
Tip  
Gnd  
Ring  
7
8
9
10  
Tip 12  
Gnd 13  
Ring 14  
15  
Tip 17  
Gnd 18  
Ring 19  
20  
Z2  
Z8  
Z1  
Z3  
Z5  
Z7  
1
6
11  
16  
F1  
F3  
F5  
F7  
Electrical Parameters  
VDRM  
VS  
VDRM  
Volts  
VS  
CO  
pF  
Volts  
Volts  
Volts  
Part  
Pins 2-3, 4-3, 7-8, 9-8,  
Pins 2-4, 7-9,  
VT  
IDRM  
IS  
IT  
IH  
Pins  
Number * 12-13, 14-13, 17-18, 19-18  
12-14, 17-19  
Volts  
µAmps  
mAmps  
800  
Amps  
mAmps 2-3, 3-4  
P0602Z_  
P1402Z_  
P1602Z_  
P2202Z_  
P2702Z_  
P3002Z_  
P3602Z_  
P4202Z_  
P4802Z_  
P6002Z_  
25  
58  
40  
77  
50  
80  
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
50  
110  
50  
50  
40  
40  
40  
40  
30  
30  
30  
116  
130  
180  
240  
280  
320  
380  
440  
550  
154  
190  
260  
320  
360  
440  
500  
600  
700  
800  
800  
800  
800  
800  
800  
800  
800  
150  
150  
150  
150  
150  
150  
150  
150  
150  
65  
95  
90  
130  
160  
180  
220  
250  
300  
350  
120  
140  
160  
190  
220  
275  
800  
* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured between Pins 4-3 and Pins 2-3 at 1 MHz with a 2 V bias and is a typical value for “ZA” product.  
“ZB” and “ZC” capacitance is approximately 2x higher.  
Device is designed to meet balance requirements of GTS 8700 and GR 974.  
Lower capacitance MC versions may be available. Contact factory for further information.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 42  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Four-Port Longitudinal Two-chip Protector  
Thermal Considerations  
Package  
SIP  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
IS  
I
Waveform = tr x td  
H
I
DRM  
-V  
50  
0
+V  
Half Value  
VDRM  
VT  
VS  
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Waveform  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
-8  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 43  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Four-Port Metallic Line Protector  
Four-Port Metallic Line Protector  
The four-port hybrid Single In-line Package (SIP) line protector protects multiple twisted pair  
from overcurrent and overvoltage conditions. Based on a SIP, it is equivalent to four  
discrete DO-214AA SIDACtor devices and four surface mount fuses. Available in surge  
current ratings up to 500 A, this four-port SIP line protector is ideal for densely populated  
line cards that cannot afford PCB inefficiencies or the use of series power resistors.  
F2  
F3  
F4  
F1  
5
7
8
10  
11  
Tip  
1
2
Tip  
4
Tip  
Tip  
Z1  
Z2  
Z3  
Z4  
Ring  
3
Ring  
6
Ring  
9
Ring 12  
Electrical Parameters  
Part  
VDRM  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
Amps  
mAmps  
P0080Z_  
P0300Z_  
P0640Z_  
P0720Z_  
P0900Z_  
P1100Z_  
P1300Z_  
P1500Z_  
P1800Z_  
P2300Z_  
P2600Z_  
P3100Z_  
P3500Z_  
6
25  
58  
65  
75  
90  
120  
140  
170  
190  
220  
275  
320  
25  
40  
77  
88  
98  
130  
160  
180  
220  
260  
300  
350  
400  
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
50  
50  
100  
110  
50  
50  
50  
40  
40  
40  
30  
30  
30  
30  
30  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
IPP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
V
DRM is measured at IDRM  
.
S is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “ZA” and “ZB” product. “ZC” capacitance is  
approximately 2x the listed value.  
Lower capacitance MC versions may be available. Contact factory for further information.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 44  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Four-Port Metallic Line Protector  
Thermal Considerations  
Package  
SIP  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
IS  
I
Waveform = tr x td  
H
I
DRM  
-V  
50  
0
+V  
Half Value  
VDRM  
VT  
VS  
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Waveform  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
-8  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 45  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Fixed Voltage SLIC Protector  
Fixed Voltage SLIC Protector  
These DO-214AA unidirectional protectors are constructed with a SIDACtor device and an  
(T/R)  
integrated diode. They protect SLICs (Subscriber Line Interface Circuits) from damage  
during transient voltage activity and enable line cards to meet various regulatory  
requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/  
EIA-IS-968 (formerly known as FCC Part 68).  
(G)  
For specific design criteria, see details in Figure 3.21.  
Cathode  
Electrical Parameters  
Part  
VDRM  
VS  
VT  
VF  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P0641S_  
P0721S_  
P0901S_  
P1101S_  
58  
65  
75  
95  
77  
88  
98  
4
4
4
4
5
5
5
5
5
5
5
5
800  
800  
800  
800  
1
1
1
1
120  
120  
120  
120  
70  
70  
70  
70  
130  
* For individual “SA” and “SC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
V
DRM is measured at IDRM.  
VS and VF are measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB” product. “SC” capacitance is  
approximately 2x the listed value.  
Parallel capacitive loads may affect electrical parameters.  
Surge Ratings (Preliminary Data)  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
C
150  
500  
150  
400  
90  
200  
50  
120  
45  
100  
20  
50  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 46  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Fixed Voltage SLIC Protector  
Thermal Considerations  
Package  
DO-214AA  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
VF  
Peak  
Value  
100  
Waveform = tr x td  
VDRM  
VS  
VT  
-V  
50  
+V  
Half Value  
IDRM  
IH  
IS  
0
tr  
0
td  
IT  
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 47  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Twin SLIC Protector  
Twin SLIC Protector  
Subscriber Line Interface Circuits (SLIC) are highly susceptible to transient voltages, such  
as lightning and power cross conditions. To minimize this threat, Teccor provides this dual-  
chip, fixed-voltage SLIC protector device.  
1
(T)  
2
(G)  
3
For specific design criteria, see details in Figure 3.23.  
(R)  
Electrical Parameters  
VDRM  
VS  
VDRM  
Volts  
VS  
Volts  
Volts  
Volts  
Part  
VT  
VF  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Pins 1-2, 2-3  
Pins 1-3  
Volts  
Volts  
µAmps mAmps Amps mAmps  
P0641CA2  
P0721CA2  
P0901CA2  
P1101CA2  
58  
65  
75  
95  
77  
88  
98  
58  
65  
75  
95  
77  
88  
98  
4
4
4
4
5
5
5
5
5
5
5
5
800  
800  
800  
800  
1
1
1
1
120  
120  
120  
120  
60  
60  
60  
60  
130  
130  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
V
DRM is measured at IDRM.  
VS and VF are measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured across pins 1-2 or 2-3 at 1 MHz with a 2 V bias. Capacitance across pins 1-3 is approximately  
half.  
Parallel capacitive loads may affect electrical parameters.  
Compliance with GR 1089 or UL 60950 power cross tests may require special design considerations. Contact the factory for further  
information.  
Surge Ratings (Preliminary Data)  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
150  
150  
90  
50  
45  
20  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 48  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Twin SLIC Protector  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
Unit  
°C  
°C  
Modified DO-214AA  
-40 to +150  
-65 to +150  
85  
Pin 3  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
Pin 1  
Pin 2  
+I  
tr = rise time to peak value  
td = decay time to half value  
VF  
Peak  
Value  
100  
Waveform = tr x td  
VDRM  
VS  
VT  
-V  
+V  
50  
0
Half Value  
IDRM  
IH  
IS  
tr  
td  
IT  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 49  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Multiport SLIC Protector  
Multiport SLIC Protector  
This multiport line protector is designed as a single-package solution for protecting  
1
(T1)  
6
(T2)  
multiple twisted pair from overvoltage conditions. Based on a six-pin SOIC package, it  
is equivalent to four discrete DO-214AA packages. Available in surge current ratings  
up to 500 A for a 2x10 µs event, the multiport line protector is ideal for densely  
populated line cards that cannot afford PCB inefficiencies or the use of series power  
resistors.  
2
(G1)  
5
(G2)  
3
(R1)  
4
(R2)  
For specific design criteria, see details in Figure 3.24.  
Electrical Parameters  
VDRM  
VS  
VDRM  
Volts  
VS  
Volts  
Volts  
Volts  
Pins  
Part  
1-2, 2-3,  
Pins  
1-3, 4-6  
VT  
VF  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
4-5, 5-6  
Volts  
Volts  
µAmps mAmps Amps mAmps  
P0641U_  
P0721U_  
P0901U_  
P1101U_  
58  
77  
88  
98  
58  
65  
75  
95  
77  
88  
98  
4
4
4
4
5
5
5
5
5
5
5
5
800  
800  
800  
800  
1
1
1
1
120  
120  
120  
120  
70  
70  
70  
70  
65  
75  
95  
130  
130  
* For individual “UA” and “UC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
V
DRM is measured at IDRM.  
VS and VF are measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured across pins 1-2, 2-3, 4-5, or 5-6 at 1 MHz with a 2 V bias and is a typical value. Capacitance  
across pins 1-3 or 4-6 is approximately half. “UC” capacitance is approximately 2x the listed value for “UA” product.  
Parallel capacitive loads may affect electrical parameters.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
C
150  
500  
150  
400  
90  
200  
50  
120  
45  
100  
20  
50  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 50  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Multiport SLIC Protector  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
60  
Unit  
°C  
°C  
Modified MS-013  
6
5
4
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
1
2
3
+I  
tr = rise time to peak value  
td = decay time to half value  
VF  
Peak  
Value  
100  
Waveform = tr x td  
VDRM  
VS  
VT  
-V  
+V  
50  
0
Half Value  
IDRM  
IH  
IS  
tr  
td  
IT  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 51  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Battrax SLIC Protector  
Battrax SLIC Protector  
This solid state protection device can be referenced to either a positive or negative voltage  
source. The B1xx0C_ is for a -VREF and the B2050C_ is for a +VREF. Designed using an  
SCR and a gate diode, the B1xx0C_ Battrax begins to conduct at |-VREF| + |-1.2 V| while the  
B2050C_ Battrax begins to conduct at |+VREF| + |1.2 V|.  
For a diagram of a Battrax application, see Figure 3.29.  
Pin 3  
(+V  
Pin 2  
(Ground)  
)
Pin 1  
REF  
(Line)  
Pin 3  
(-V  
)
REF  
Gate  
Pin 1  
Pin 2  
(Ground)  
(Line)  
-Battrax  
+Battrax  
B2050C_  
B1xx0C_  
Electrical Parameters  
Part  
VDRM  
Volts  
VS  
VT  
IDRM  
IGT  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
B1100C_  
B1160C_  
B1200C_  
B2050C_  
|-VREF| + |-1.2 V|  
|-VREF| + |-1.2 V|  
|-VREF| + |-1.2 V|  
|+VREF| + |1.2 V|  
|-VREF| + |-10 V|  
|-VREF| + |-10 V|  
|-VREF| + |-10 V|  
|+VREF| + |10 V|  
4
4
4
4
5
5
5
5
100  
100  
100  
50  
1
1
1
1
100  
160  
200  
5
50  
50  
50  
50  
* For individual “CA” and “CC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
PP ratings assume VREF = ±48 V.  
I
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “CC” product is approximately 2x the listed value.  
Positive Battrax information is preliminary data.  
V
V
REF maximum value for the negative Battrax is -200 V.  
REF maximum value for the positive Battrax is 110 V.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
C
150  
500  
150  
400  
90  
200  
60  
150  
50  
100  
40  
50  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 52  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Battrax SLIC Protector  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
Unit  
°C  
°C  
Modified DO-214AA  
-40 to +150  
-65 to +150  
85  
Pin 3  
(VREF  
)
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
Pin 1  
(Line)  
Pin 2  
(Ground)  
+I  
+I  
IT  
IS  
IH  
VDRM  
VS  
VT  
IDRM  
-V  
-V  
+V  
+V  
IDRM  
IH  
VS  
VDRM  
VT  
IS  
IT  
-I  
-I  
V-I Characteristics for Negative Battrax  
V-I Characteristics for Positive Battrax  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
6
25 ˚C  
25 ˚C  
1.2  
4
1.0  
0.8  
0.6  
0.4  
2
0
-4  
-6  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 53  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Battrax Dual Negative SLIC Protector  
Battrax Dual Negative SLIC Protector  
This solid state Battrax protection device is referenced to a negative voltage source. Its  
dual-chip package also includes internal diodes for transient protection from positive  
surge events.  
(G)  
5
For a diagram of a Battrax application, see Figure 3.27.  
1
2
3
(R)  
(T) (-VREF  
)
Electrical Parameters  
Part  
VDRM  
VS  
VT  
VF  
IDRM  
IGT  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
B1101U_  
B1161U_  
B1201U_  
|-VREF| + |-1.2V|  
|-VREF| + |-1.2V|  
|-VREF| + |-1.2V|  
|-VREF| + |-10V|  
|-VREF| + |-10V|  
|-VREF| + |-10V|  
4
4
4
5
5
5
5
5
5
100  
100  
100  
1
1
1
100  
160  
200  
50  
50  
50  
* For individual “UA” and “UC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
PP ratings assume a VREF = -48 V.  
I
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.  
REF maximum value for the B1101, B1161, and/or B1201 is -200 V.  
V
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
A
C**  
Amps/µs  
150  
500  
150  
400  
90  
200  
50  
120  
45  
100  
20  
50  
500  
500  
** Call factory for release date.  
http://www.teccor.com  
+1 972-580-7777  
2 - 54  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Battrax Dual Negative SLIC Protector  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +125  
-65 to +150  
60  
Unit  
°C  
°C  
Modified MS-013  
6
5
4
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
1
2
3
+I  
tr = rise time to peak value  
td = decay time to half value  
VF  
Peak  
Value  
100  
Waveform = tr x td  
VDRM  
VS  
VT  
-V  
+V  
50  
0
Half Value  
IDRM  
IH  
IS  
tr  
td  
IT  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 55  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Battrax Dual Positive/Negative SLIC Protector  
Battrax Dual Positive/Negative SLIC Protector  
(+VREF  
)
This Battrax device protects Subscriber Line Interface Circuits (SLIC) that use both a  
4
positive and negative Ring voltage. It limits transient voltages with rise times of 100 V/  
µs to V  
±10 V.  
REF  
Ground  
2, 5  
Teccor’s six-pin Battrax devices are constructed using four SCRs and four gate diodes.  
The SCRs conduct when a voltage that is more negative than -V (and/or more  
REF  
positive than +V  
) is applied to the cathode (Pins 1 and 3) of the SCR. During  
conduction, the SCRs appear as a low-resistive path which forces all transients to be  
REF  
6
3
(R)  
1
(T)  
(-VREF  
)
shorted to ground.  
For a diagram of a Battrax application, see Figure 3.30.  
Electrical Parameters  
Part  
VDRM  
Volts  
VS  
VT  
IDRM  
IGT  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
B3104U_  
B3164U_  
B3204U_  
|-VREF| + |±1.2V|  
|-VREF| + |±1.2V|  
|-VREF| + |±1.2V|  
|-VREF| + |±10V|  
|-VREF| + |±10V|  
|-VREF| + |±10V|  
4
4
4
5
5
5
100  
100  
100  
1
1
1
100  
160  
200  
50  
50  
50  
* For individual “UA” and “UC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
PP ratings assume a VREF = ±48 V.  
I
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.  
Positive Battrax information is preliminary data.  
V
V
REF maximum value for the negative Battrax is -200 V.  
REF maximum value for the positive Battrax is 110 V.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
A
C**  
Amps/µs  
150  
500  
150  
400  
90  
200  
50  
120  
45  
100  
20  
50  
500  
500  
** Call factory for release date.  
http://www.teccor.com  
+1 972-580-7777  
2 - 56  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Battrax Dual Positive/Negative SLIC Protector  
Thermal Considerations  
Package  
Modified MS-013  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +125  
-65 to +150  
60  
Unit  
°C  
°C  
6
5
4
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
1
2
3
+I  
tr = rise time to peak value  
td = decay time to half value  
Positive Battrax  
Characteristics  
IT
Peak  
Value  
100  
IS
I
H  
Waveform = tr x td  
I
DRM  
-V  
+V  
50  
0
Half Value  
V
DRM  
V
T  
V
S  
Negative Battrax  
Characteristics  
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 57  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
Battrax Quad Negative SLIC Protector  
Battrax Quad Negative SLIC Protector  
(+VREF  
)
This Battrax device is an integrated overvoltage protection solution for SLIC-based  
(Subscriber Line Interface Circuit) line cards. This six-pin device is constructed using  
four SCRs and four gate diodes.  
4
Ground  
2, 5  
The device is referenced to V  
and conducts when a voltage that is more negative  
BAT  
than -V  
is applied to the cathode (pins 1, 3, 4, or 6) of the SCR. During conduction,  
REF  
all negative transients are shorted to Ground. All positive transients are passed to  
Ground by steering diodes.  
6
3
(R)  
1
(T)  
(-VREF  
)
For specific diagrams showing these Battrax applications, see Figure 3.28.  
Electrical Parameters  
Part  
VDRM  
Volts  
VS  
VT  
IDRM  
IGT  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
B1101U_4  
B1161U_4  
B1201U_4  
|-VREF| + |-1.2V|  
|-VREF| + |-1.2V|  
|-VREF| + |-1.2V|  
|-VREF| + |-10V|  
|-VREF| + |-10V|  
|-VREF| + |-10V|  
4
4
4
5
5
5
100  
100  
100  
1
1
1
100  
160  
200  
50  
50  
50  
* For individual “UA” and “UC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
PP ratings assume a VREF = ±48 V.  
I
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.  
REF maximum value for the negative Battrax is -200 V.  
V
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
C
150  
500  
150  
400  
90  
200  
50  
120  
45  
100  
20  
50  
500  
500  
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+1 972-580-7777  
2 - 58  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
Battrax Quad Negative SLIC Protector  
Thermal Considerations  
Package  
Modified MS-013  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +125  
-65 to +150  
60  
Unit  
°C  
°C  
6
5
4
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
1
2
3
+I  
tr = rise time to peak value  
td = decay time to half value  
Positive Battrax  
Characteristics  
IT
Peak  
Value  
100  
IS
I
H  
Waveform = tr x td  
I
DRM  
-V  
+V  
50  
0
Half Value  
V
DRM  
V
T  
V
S  
Negative Battrax  
Characteristics  
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 59  
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+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
CATV and HFC SIDACtor Device  
CATV and HFC SIDACtor Device  
This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package.  
It protects equipment located in the severe surge environment of Community Antenna TV  
(CATV) applications.  
1
3
Used in Hybrid Fiber Coax (HFC) applications, this device replaces the gas tube  
traditionally used for station protection, because a SIDACtor device has a much tighter  
voltage tolerance.  
Electrical Parameters  
CO  
pF  
Pins 1-3  
200  
Part  
VDRM  
Volts  
120  
170  
VS  
VT  
IDRM  
IS  
IT  
IH  
Number *  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P1400AD  
P1800AD  
160  
220  
3
5.5  
5
5
800  
800  
2.2  
2.2  
50  
50  
150  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.  
Surge Ratings  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
8x20 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps/µs  
D
1000  
250  
120  
500  
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2 - 60  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
CATV and HFC SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
60  
Unit  
°C  
°C  
Modified  
TO-220  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
3
1
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
IS  
IH  
Waveform = tr x td  
IDRM  
-V  
50  
0
+V  
Half Value  
VDRM  
VT  
VS  
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
25 ˚C  
25 ˚C  
4
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 61  
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®
SIDACtor Data Book and Design Guide  
High Surge Current SIDACtor Device  
High Surge Current SIDACtor Device  
This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package.  
1
(T)  
It protects equipment located in the severe surge environment of Community Antenna TV  
2
(G)  
(CATV) applications.  
3
(R)  
This device can replace the gas tubes traditionally used for station protection because  
SIDACtor devices have much tighter voltage tolerances.  
Electrical Parameters  
CO  
pF  
Pins 1-3  
Part  
VDRM  
Volts  
VS  
VT  
IDRM  
IS  
IT  
IH  
Number *  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P6002AD  
550  
700  
5.5  
5
800  
2.2  
50  
60  
* For surge ratings, see table below.  
Electrical Parameters  
CO  
pF  
Pins 1-3  
Part  
VDRM  
Volts  
VS  
VT  
IDRM  
IS  
IT  
IH  
Number *  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P3100AD  
280  
360  
5.5  
5
800  
2.2  
120  
115  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.  
Surge Ratings  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
8x20 µs  
10x1000 µs  
di/dt  
Series  
Amps  
Amps  
Amps/µs  
D
1000  
250  
120  
1000  
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2 - 62  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
High Surge Current SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
60  
Unit  
°C  
°C  
Modified  
TO-220  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
PIN 1  
PIN 3  
PIN 2  
Note: P6002AD is shown. P3100AD has no center lead.  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
0
IS  
IH  
Waveform = tr x td  
IDRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 63  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
CATV Line Amplifiers/Power Inserters SIDACtor Device  
CATV Line Amplifiers/Power Inserters  
SIDACtor Device  
This SIDACtor device is a 5000 A solid state protection device offered in a non-isolated  
TO-218 package. It protects equipment located in the severe surge environment of CATV  
(Community Antenna TV) applications.  
1
2
In CATV line amplifiers and power inserters, this device can replace the gas tubes  
traditionally used for station protection because SIDACtor devices have much tighter  
voltage tolerances.  
Electrical Parameters  
Part  
VDRM  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
Amps **  
mAmps  
P1900ME  
P2300ME  
140  
180  
220  
260  
4
4
5
5
800  
800  
2.2/25  
2.2/25  
50  
50  
750  
750  
* For surge ratings, see table below.  
** IT is a free air rating; heat sink IT rating is 25 A.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.  
Surge Ratings  
IPP  
ITSM  
60 Hz  
Amps  
8x20 µs  
di/dt  
Series  
Amps  
Amps/µs  
E
5000  
400  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 64  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
CATV Line Amplifiers/Power Inserters SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
100  
Unit  
°C  
°C  
2
TO-218  
TC  
Maximum Case Temperature  
°C  
RJC *  
RJA  
Thermal Resistance: Junction to Case  
Thermal Resistance: Junction to Ambient  
1.7  
56  
°C/W  
°C/W  
3
(No  
2
1
Connection)  
* RJC rating assumes the use of a heat sink and on state mode for extended time at 25 A, with average power dissipation of 29.125 W.  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
0
IS  
IH  
Waveform = tr x td  
IDRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
tr  
td  
0
t Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 65  
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+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
TeleLink Fuse  
TeleLink Fuse  
The TeleLink Surface Mount (SM) surge resistant fuse offers circuit protection without  
requiring a series resistor. When used in conjunction with the SIDACtor Transient Voltage  
Suppressor (TVS), the TeleLink SM fuse and the SIDACtor TVS provide a complete  
regulatory-compliant solution for standards such as GR 1089, TIA/EIA-IS-968, UL 60950,  
and ITU K.20 and K.21 (formerly known as FCC Part 68). No series resistor is required for  
the F1250T and F1251T to comply with these standards.  
Contact factory for enhanced K.20 and K.21 details.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
2x10 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
TeleLink SM Fuse  
F0500T  
F1250T  
F1251T  
not rated  
500  
500  
75  
160  
160  
45  
115  
115  
35  
100  
100  
Interrupting Values  
I2t Measured  
Interrupting Rating  
TeleLink SM  
Voltage  
Rating  
250 V  
250 V  
250 V  
Current  
Rating  
500 mA  
1.25 A  
2 A  
at DC Rated  
Voltage  
Fuse  
Voltage, Current  
600 V, 40 A  
600 V, 60 A *  
600 V, 60 A *  
MIN  
1 s  
1 s  
1 s  
TYP  
MAX  
60 s  
60 s  
60 s  
F0500T  
F1250T  
F1251T  
1.3 A2s  
22.2 A2s  
30 A2s  
2 s  
2 s  
2 s  
* Interrupt test characterized at 50° to 70° phase angle. Phase angles approximating 90° may result in damage to the body of the fuse.  
Notes:  
The TeleLink SM fuse is designed to carry 100% of its rated current for four hours and 250% of its rated current for one second  
minimum and 120 seconds maximum. Typical time is four to 10 seconds. For optimal performance, an operating current of 80% or  
less is recommended.  
I2t is a non-repetitive RMS surge current rating for a period of 16.7 ms.  
Resistance Ratings  
DC Cold Resistance  
Typical Voltage Drop  
@ Rated Current  
TeleLink SM Fuse  
F0500T  
MIN  
MAX  
0.471 V  
0.205 V  
0.110 V  
0.420  
0.107 ꢁ  
0.050 ꢁ  
0.640 ꢁ  
0.150 ꢁ  
0.100 ꢁ  
F1250T  
F1251T  
Notes:  
Typical inductance 4 µH up to 500 MHz.  
Resistance changes 0.5% for every °C.  
Resistance is measured at 10% rated current.  
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© 2002 Teccor Electronics  
SIDACtor Data Book and Design Guide  
®
TeleLink Fuse  
Qualification Data  
The F1250T and F1251T meet the following test conditions per GR 1089 without additional series resistance.  
However, in-circuit test verification is required. Note that considerable heating may occur during Test 4 of the  
Second Level AC Power Fault Test.  
First Level Lightning Surge Test  
Surge Voltage  
Wave-form  
µs  
Surge Current  
Amps  
Repetitions Each  
Polarity  
Test  
Volts  
1
2
3
4
5
±600  
±1000  
±1000  
±2500  
±1000  
10x1000  
10x360  
10x1000  
2x10  
100  
100  
100  
500  
25  
25  
25  
25  
10  
5
10x360  
Second Level Lightning Surge Test  
Surge Voltage  
Wave-form  
µs  
Surge Current  
Amps  
Repetitions Each  
Polarity  
Test  
Volts  
1
±5000  
2x10  
500  
1
First Level AC Power Fault Test  
Applied Voltage, 60 Hz  
VRMS  
Short Circuit Current  
Test  
1
Amps  
Duration  
15 min  
50  
0.33  
2
100  
0.17  
15 min  
3
4
5
6
7
8
9
200, 400, 600  
1 at 600 V  
60 applications, 1 s each  
60 applications, 1 s each  
60 applications, 5 s each  
30 s each  
1000  
*
600  
600  
600  
1000  
1
*
0.5  
2.2  
3
2 s each  
1 s each  
0.5 s each  
5
* Test 5 simulates a high impedance induction fault. For specific information, please contact Teccor Electronics.  
Second Level AC Power Fault Test for Non-Customer Premises Equipment  
Applied Voltage, 60 Hz  
Short Circuit Current  
Test  
VRMS  
Amps  
Duration  
30 min  
5 s  
5 s  
30 min  
1
2
3
4
120, 277  
600  
600  
30  
60  
7
100-600  
2.2 at 600 V  
Notes:  
Power fault tests equal or exceed the requirements of UL 60950 3rd edition.  
Test 4 is intended to produce a maximum heating effect. Temperature readings can exceed 150 °C.  
Test 2 may be dependent on the closing angle of the voltage source. Fuse is characterized at 50° to 70°. Closing angles  
approximating 90° may result in damage to the body of the fuse.  
Use caution when routing internal traces adjacent to the F1250T and F1251T.  
© 2002 Teccor Electronics  
2 - 67  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
TeleLink Fuse  
1000  
800  
700  
600  
500  
400  
300  
200  
100  
90  
80  
70  
60  
50  
40  
30  
20  
F0500T  
F1250T  
F1251T  
10  
9
8
7
6
5
4
3
2
1
.9  
.8  
.7  
.6  
.5  
.4  
.3  
.2  
.1  
.09  
.08  
.07  
.06  
.05  
.04  
.03  
.02  
.01  
.1  
.2  
.4  
.5  
.7 .8 .9  
1
5
10  
20  
30  
50 60 70 80 90100  
Current in Amperes  
Time Current Curve  
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2 - 68  
© 2002 Teccor Electronics  
SIDACtor Data Book and Design Guide  
®
TeleLink Fuse  
Temperature Derating Curve  
Operating temperature is -55 °C to +125 °C with proper correction factor applied.  
150  
140  
130  
120  
110  
100  
90  
80  
70  
60  
Effect on  
Current Rating  
50  
40  
30  
-55 -60 -40 -20  
0
20 40 60 80 100 125  
Ambient ˚C  
Chart of Correction Factor  
Maximum Temperature Rise  
TeleLink Fuse  
F0500T  
Temperature Reading  
?75 °C (167 °F) *  
?75 °C (167 °F) *  
?75 °C (167 °F) *  
F1250T  
F1251T  
* Higher currents and PCB layout designs can affect this parameter.  
Notes:  
Readings are measured at rated current after temperature stabilizes  
The F1250T meets the requirements of UL 248-14. However, board layout, board trace widths, and ambient  
temperature values can cause higher than expected rises in temperature. During UL testing, the typical  
recorded heat rise for the F1250T at 2.2 A was 120 °C.  
Package Symbolization  
Manufactured in  
USA  
Manufactured in  
Taiwan  
Marking  
FU  
FT  
JU  
JT  
F0500T  
F
F
F1250T  
F1251T  
U
U
U
T
T
T
J
J
NU  
NT  
N
N
© 2002 Teccor Electronics  
2 - 69  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  
TeleLink Fuse  
http://www.teccor.com  
+1 972-580-7777  
2 - 70  
© 2002 Teccor Electronics  
SIDACtor Data Book and Design Guide  
®

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