US2K [TAYCHIPST]
SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS; 表面装载高效整流二极管
| 型号： | US2K |
| 厂家： | 
SHENZHEN TAYCHIPST ELECTRONIC CO., LTD |
| 描述： | SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS |
| 文件： | 总2页 (文件大小：1872K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US2A THRU US2M
50V-1000V 2.0A
SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS
Features
·
Plastic package has UL flammability
Classification 94V-0
·
·
·
·
Glass Passivated chip junction
Built in strain relief
Fast switching speed for high efficiency
High temperature soldering guaranteed:
250 /10 seconds
Mechanical Data
·
·
Case: JEDED DO-214AA transfer molded plastic
Terminals: Solder plated, Solderable per
MIL-STD-750, Method 2026
·
·
Polarity: Color band denotes cathode end
Weight: 0.003 ounce, 0.093 gram
Maximum Ratings & Thermal Characteristics Ratings at 25
℃
ambient temperature unless otherwise specified.
US2A US2B US2D US2G US2J US2K US2M
Symbols
VRRM
Unit
V
50
35
50
100
70
200
140
200
400
280
600
420
600
800
560
800
1000
700
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRMS
V
V
A
A
VDC
IF(AV)
IFSM
100
400
2.0
50
1000
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
Typical thermal resistance
℃/W
50
RθJA
Tj, TSTG
-55 --- +150
℃
Operating junction and storage temperature range
Electrical Characteristics Ratings at 25
℃ambient temperature unless otherwise specified.
US2A US2B US2D US2G US2J US2K US2M
Symbols
Unit
V
IF =2.0A
1.0
1.3
1.7
VF
Maximum forward voltage
Maximum reverse current
MAX. Reverse Recovery Time
Type junction capacitance
TA= 25
℃
10
IR
trr
Cj
μA
TA= 125
℃
500
IF=0.5A IR=1.0A IRR=0.25A
50
75
nS
pF
VR = 4.0V, f = 1MHz
15
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
1 of 2
US2A THRU US2M
50V-1000V 2.0A
SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS
Fig.1
10
TYPICAL FORWARD CHARACTERISTIC
FORWARD CURRENT DERATING CURVE
Fig.2
2.4
2.0
1.6
1.2
0.8
US2A thru
US2D
2
1
US2G
0.2
0.1
US2J thru US2M
0.4
0
Tj = 25 °C
0.01
1.8
1.6
1.4
0.8
1.0
1.2
0
25 50 75 100 125 150 175
°C
F
VF Instantaneous Forward Voltage (V)
Tamb, ambient temperature (°C)
FIG.4-TYPICAL JUNCTION CAPACITANCE
FigI.3 -TYPICAL REVERSE
CHARACTERISTICS
100
100
10
10
TJ=100
C
1.0
J
T
=25
f=1MHz
Vsig=50mVp-p
C
TJ=25
1
0.1
1.0
10
100
0.1
100
120
140
60
80
0
20
40
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
F1G.5-TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
Trr
50Ω
10Ω
+0.5A
NONINDUCTIVE NONINDUCTIVE
(-)
0
PULSE
GENERATIOR
(NOTE 2)
D.U.T.
(+)
-0.25A
25 Vdc
(approx.)
(-)
(+)
1Ω
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-1.0A
1cm
SET TIME BASE FOR
50/100ns/cm
NOTES : 1.Rise Time=7ns max. Input Impedance=
1 magohm. 22pF
2.Rise time=10ns max. Source Impedance=
50 ohms
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
2 of 2
相关型号：
US2K-TP
Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
MCC
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