TCMTZJ4V7BT.TB [TAK_CHEONG]
Zener Diode, 4.68V V(Z), 2.8%, 0.5W, Silicon, Unidirectional;型号: | TCMTZJ4V7BT.TB |
厂家: | Tak Cheong Electronics (Holdings) Co.,Ltd |
描述: | Zener Diode, 4.68V V(Z), 2.8%, 0.5W, Silicon, Unidirectional 测试 二极管 |
文件: | 总8页 (文件大小:148K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMICONDUCTOR
500 mW DO-34 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Parameter
Value
Units
Power Dissipation
500
-65 to +200
+175
mW
°C
Storage Temperature Range
Operating Junction Temperature
°C
AXIAL LEAD
DO34
Lead Temperature (1/16” from case for 10 seconds)
230
°C
DEVICE MARKING DIAGRAM
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.0 to 39 Volts
DO-34 Package (JEDEC DO-204)
L
xxx
=Tak Cheong Logo
=Device Code TCMTZJxxx
T (tolerance) =A, B, C or D
Band color =Black
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
Anode
Cathode
ELECTRICAL SYMBOL
Electrical Characteristics TA = 25°C unless otherwise noted
Izt
Zzt@Izt
(Ohms)
Max
Zzk@Izk
IR @VR
VZ@IZT
T
Izk
(mA)
VR
(V)
(Ohms)
(uA)
Device Type
(mA)
Tolerance
Min
Nom
Max
Max
Max
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
C
5.5% 1.880
4.3% 2.020
4.0% 2.120
4.1% 2.220
3.9% 2.330
4.0% 2.430
4.0% 2.540
3.9% 2.690
3.7% 2.850
3.4% 3.010
3.4% 3.160
3.1% 3.320
3.6% 3.455
3.3% 3.600
3.5% 3.740
3.3% 3.890
3.0% 4.040
3.0% 4.170
3.0% 4.300
1.990
2.110
2.210
2.315
2.425
2.530
2.645
2.800
2.960
3.115
3.270
3.425
3.575
3.723
3.875
4.025
4.165
4.300
4.435
2.100
2.200
2.300
2.410
2.520
2.630
2.750
2.910
3.070
3.220
3.380
3.530
3.695
3.845
4.010
4.160
4.290
4.430
4.570
TCMTZJ2V0
TCMTZJ2V2
TCMTZJ2V4
TCMTZJ2V7
TCMTZJ3V0
TCMTZJ3V3
TCMTZJ3V6
TCMTZJ3V9
5
5
5
5
5
5
5
5
100
100
100
110
120
120
100
100
1000
0.5
0.5
0.5
0.5
0.5
0.5
1
120
100
120
100
50
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
1000
1000
1000
1000
1000
1000
1000
20
10
1
5
TCMTZJ4V3
5
100
1000
1
5
1.0
November 2004 / Original
1
SEMICONDUCTOR
Electrical Characteristics TA = 25°C unless otherwise noted
Izt
Zzt@Izt
(Ohms)
Max
Zzk@Izk
IR@VR
(uA)
Max
VZ@Izt
T
Izk
(mA)
VR
(V)
(Ohms)
Device Type
(mA)
5
Tolerance
Min
Nom
Max
Max
A
2.6%
2.8%
2.7%
2.6%
2.6%
2.7%
2.4%
2.5%
2.6%
2.7%
2.6%
2.5%
2.6%
2.6%
2.6%
2.7%
2.6%
2.5%
2.6%
2.6%
2.5%
2.6%
2.5%
2.6%
2.6%
2.6%
2.5%
2.5%
4.44
4.55
4.68
4.81
4.94
5.09
5.28
5.45
5.61
5.78
5.96
6.12
6.29
6.49
6.66
6.85
7.07
7.29
7.53
7.78
8.03
8.29
8.57
8.83
9.12
9.41
9.70
9.94
4.56
4.68
4.81
4.94
5.07
5.23
5.41
5.59
5.76
5.94
6.12
6.28
6.46
6.66
6.84
7.04
7.26
7.48
7.73
7.99
8.24
8.51
8.79
9.07
9.36
9.66
9.95
4.68
4.80
4.93
5.07
5.20
5.37
5.55
5.73
5.91
6.09
6.27
6.44
6.63
6.83
7.01
7.22
7.45
7.67
7.92
8.19
8.45
8.73
9.01
9.30
9.59
9.90
10.20
TCMTZJ4V7
TCMTZJ5V1
TCMTZJ5V6
TCMTZJ6V2
TCMTZJ6V8
TCMTZJ7V5
TCMTZJ8V2
TCMTZJ9V1
80
80
60
60
20
20
20
25
900
800
500
300
150
120
120
120
1
1
5
5
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
5
5
5
5
5
5
5
1
5
1
5
0.5
0.5
0.5
0.5
2
0.5
0.5
0.5
TCMTZJ10V
5
30
120
0.5
0.2
7.0
10.19 10.44
10.45 10.71
10.78 11.05
11.10 11.38
11.42 11.71
11.74 12.03
12.05 12.35
12.43 12.75
12.88 13.21
13.33 13.66
13.79 14.13
14.26 14.62
14.72 15.09
15.19 15.57
15.65 16.04
16.10 16.51
16.64 17.06
17.26 17.70
17.88 18.33
18.49 18.96
19.11 19.59
19.73 20.22
20.22 20.72
2.6% 10.18
2.6% 10.50
2.5% 10.82
2.5% 11.13
2.6% 11.44
2.6% 11.74
2.6% 12.11
2.6% 12.55
2.6% 12.99
2.5% 13.44
2.6% 13.89
2.5% 14.35
2.6% 14.80
2.6% 15.25
2.5% 15.69
2.5% 16.22
2.5% 16.82
2.6% 17.42
2.5% 18.02
2.5% 18.63
2.5% 19.23
2.5% 19.72
TCMTZJ11V
TCMTZJ12V
TCMTZJ13V
TCMTZJ15V
TCMTZJ16V
TCMTZJ18V
5
5
5
5
5
5
30
30
35
40
40
45
120
110
110
110
150
150
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
0.2
8.0
9.0
10
11
12
13
TCMTZJ20V
5
55
200
0.5
0.2
15
November 2004 / Original
2
SEMICONDUCTOR
Electrical Characteristics TA = 25°C unless otherwise noted
Izt
Zzt@Izt
(Ohms)
Max
Zzk@Izk
IR@VR
(uA)
Max
VZ@Izt
Izk
(mA)
VR
(V)
T
(Ohms)
Device Type
(mA)
Tolerance
Min
Nom
Max
Max
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
2.2% 20.15
2.5% 20.64
2.5% 21.08
2.5% 21.52
2.5% 22.05
2.5% 22.61
2.5% 23.12
2.5% 23.63
2.5% 24.26
2.5% 24.97
2.5% 25.63
2.5% 26.29
2.5% 26.99
2.5% 27.70
2.5% 28.36
2.5% 29.02
2.5% 29.68
2.5% 30.32
2.5% 30.90
2.5% 31.49
2.5% 32.14
2.5% 32.79
2.5% 33.40
2.5% 34.01
2.5% 34.68
2.5% 35.36
2.5% 36.00
2.5% 36.63
21.68 21.20
21.18 21.71
21.63 22.17
22.08 22.63
22.62 23.18
23.19 23.77
23.72 24.31
24.24 24.85
24.89 25.52
25.62 26.26
26.29 26.95
26.97 27.64
27.69 28.39
28.42 29.13
29.09 29.82
29.77 30.51
30.45 31.22
31.10 31.88
31.70 32.50
32.30 33.11
32.97 33.79
33.64 34.49
34.27 35.13
34.89 35.77
35.58 36.47
36.28 37.19
36.93 37.85
37.58 38.52
TCMTZJ22V
TCMTZJ24V
TCMTZJ27V
TCMTZJ30V
TCMTZJ33V
TCMTZJ36V
TCMTZJ39V
5
5
5
5
5
5
5
30
35
45
55
65
75
85
200
200
250
250
250
250
250
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
17
19
21
23
25
27
30
VF (forward voltage) = 1.2 V maximum @ IF = 200mA for all types
Note:
1. The zener voltage subdivision (VZ) is measured 40mS after diode is powered up.
2. The operating resistance (Zzt and Zzk) is measured by superimposing a minute alternation current
in the regulated current (Iz).
3. When ordering, please specify tolerance A, B, C or D.
Electrical Symbol Definition
Typical Characteristics
I
Symbol
Parameter
(mA)
Reverse Zener Voltage @ Izt
Reverse Current
VZ
Izt
IF
Zzt
Izk
Zzk
IR
Maximum Zener Impedance @ Izt
Reverse Current
(mV)
BV
VR
V
IR
IR
V
(V)
Maximum Zener Impedance @ Izk
Reverse Current @ VR
Breakdown Voltage
VR
IF
Forward Current
(nA)
(µA)
Forward Voltage @ IF
VF
November 2004 / Original
3
SEMICONDUCTOR
Ordering Information
Device
Package
Bulk
Quantity
10,000
5,000
TCMTZJXXXT
TCMTZJXXXT.TB
TCMTZJXXXT.TR
TCMTZJXXXT
Tape and Ammo
Tape and Reel
10,000
Others (…contact Tak Cheong sales representatives)
Axial-Lead Tape Packaging Standards
This axial-lead component’s packaging requirements use in automatic testing and assembly equipment. And this standard practices for
lead-tape packaging of axial-lead components meets the requirements of EIA Standard RS-296-D “Lead-taping of Components on Axial
Lead Configuration for Automatic Insertion”.
November 2004 / Original
4
SEMICONDUCTOR
Tape & Reel Packaging Information
Label
Corrugated outer liner
Write (Anode)
Tape & Reel
Outline
Red or Blue (Cathode)
Kraft paper wound
between layers
DIM
Millimeters
D1
D2
D3
D4
356
30
Reel
Dimensions
84
77.5
Package Type
DO-34
Quantity Per Reel
Quantity Per
Reel
10,000
November 2004 / Original
5
SEMICONDUCTOR
Tape & Ammo Packaging Information
Tape & Ammo Outline
250mm x 80mm x 80mm
Package Type
DO-34
Quantity Per Reel
Quantity Per Ammo Box
5,000
Taping Dimension
Desceription
Millimeters
Standard Width
52
26
26+0. 5/ - 0
5.08±0. 4
±0. 69
Tape Spacing (B)
Component Pitch (C)
Untaped Lead (L1-L2)
Glass Offset (F)
52±0.69
5.08±0. 4
±0. 69
±0. 69
±0. 69
Bent (D)
1. 2 Max
1. 2 Max
6.138±0. 576
0.55 Max
3.2 Min
Tape Width (G)
6.138±0. 576
0.55 Max
3.2 Min
0
Tape Mismatch (E)
Taped Lead (G)
Lead Beyond Tape (H)
0
November 2004 / Original
6
SEMICONDUCTOR
Bulk Packaging Information
190mm x 150mm x 65mm
Quantity Per Plastic Bag
DO-34
500 x 20 plastic bags
Bulk Outline
Plastic bag
Package Type
DO-34
Quantity Per Reel
Quantity Per
Box
10,000
November 2004 / Original
7
SEMICONDUCTOR
Package Outline
Package
Case Outline
DO-34
DO-34
Dimension
Millimeters
Inches
Min
0.46
2.16
25.40
1.27
Max
0.55
3.04
38.10
1.90
Min
Max
A
B
C
D
0.018
0.085
1.000
0.050
.0022
0.120
1.500
0.075
Note:
1.0 All dimensions are within JEDEC standard.
2.0 DO-34 polarity denoted by cathode band.
November 2004 / Original
8
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