TC20-1 [TAK_CHEONG]
Zener Diode;型号: | TC20-1 |
厂家: | Tak Cheong Electronics (Holdings) Co.,Ltd |
描述: | Zener Diode 二极管 |
文件: | 总6页 (文件大小:215K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TAK CHEONG ®
SEMICONDUCTOR
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
AXIAL LEAD
DO35
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Parameter
Value
Units
DEVICE MARKING DIAGRAM
Power Dissipation
500
-65 to +175
+175
mW
°C
X
XX
Storage Temperature Range
Operating Junction Temperature
°C
Voltage Code : TCXXX
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.0 to 36 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Cathode
Anode
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
RoHS Compliant and Halogen Free
ELECTRICAL SYMBOL
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
Electrical Characteristics (TA = 25°C unless otherwise noted)
Zener Voltage
Reverse Current
Dynamic Resistance
Test
Test
Test
Type
Grade
VZ(Volts)
IR (µA)
Max
ZZT @IZT (Ω )
Condition
IZ (mA)
Condition
Condition
Min
Max
VR (V)
Max
IZ (mA)
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
TC2
5
5
0.5
100
5
TC3
5
5
0.5
100
5
Number: DB-238
Jun.2013/B
Page 1
TAK CHEONG ®
SEMICONDUCTOR
Electrical Characteristics (TA = 25°C unless otherwise noted)
Zener Voltage
Reverse Current
Dynamic Resistance
Test
Condition
IZ (mA)
Test
Condition
Test
ZZT @IZT (Ω )
Type
Grade
VZ(Volts)
Min
IR (µA)
Max
Condition
Max
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.5
5.6
5.7
5.8
5.9
6
VR (V)
Max
IZ (mA)
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
TC4
5
5
5
5
5
5
5
5
1
1
1
1.5
2
100
5
TC5
TC6
TC7
TC9
100
5
5
5
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
6
40
6.1
6.3
6.4
6.6
6.7
6.9
7
6.1
6.3
6.4
6.6
6.7
6.9
7
3.5
15
7.2
7.3
7.6
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
7.2
7.3
7.5
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
5
20
Number: DB-238
Jun.2013/B
Page 2
TAK CHEONG ®
SEMICONDUCTOR
Electrical Characteristics (TA = 25°C unless otherwise noted)
Zener Voltage
Reverse Current
Dynamic Resistance
Test
Condition
IZ (mA)
Test
Condition
Test
ZZT @IZT (Ω )
Type
Grade
VZ(Volts)
IR (µA)
Max
Condition
Min
Max
9.9
VR (V)
Max
IZ (mA)
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
-1
9.5
9.7
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
12.1
12.4
12.7
12.9
13.1
13.4
13.7
14
9.9
10.2
10.4
10.7
10.9
11.1
11.4
11.6
11.9
12.2
12.4
12.6
12.9
13.2
13.5
13.8
14.1
14.5
14.9
15.3
15.7
16.3
16.9
17.5
18.1
18.8
19.5
20.2
20.9
21.6
22.3
22.9
23.6
24.3
25.2
26.2
27.2
28.2
29.2
30.2
31.2
32.2
33.2
TC11
5
1
7.5
25
5
TC12
5
1
9.5
35
5
14.3
14.7
15.1
15.5
15.9
16.5
17.1
17.7
18.3
19
TC15
TC16
TC18
TC20
TC22
TC24
TC27
TC30
TC33
5
5
5
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
11
12
13
15
17
19
21
23
25
40
45
5
5
5
2
2
2
2
2
2
-2
-3
-1
-2
-3
-1
55
-2
-3
-1
19.7
20.4
21.1
21.9
22.6
23.3
24
60
-2
-3
-1
65
-2
-3
-1
70
-2
24.7
25.5
26.6
27.6
28.6
29.6
30.6
31.6
32.6
33.6
34.6
-3
-1
80
-2
-3
-1
100
120
-2
-3
-1
-2
-3
Number: DB-238
Jun.2013/B
Page 3
TAK CHEONG ®
SEMICONDUCTOR
Electrical Characteristics (TA = 25°C unless otherwise noted)
Zener Voltage
Reverse Current
Dynamic Resistance
Test
Condition
IZ (mA)
Test
Condition
Test
ZZT @IZT (Ω )
Type
Grade
VZ(Volts)
IR (µA)
Max
Condition
Min
Max
35.7
36.8
38
VR (V)
Max
IZ (mA)
-1
-2
-3
34.2
35.3
36.4
TC36
2
1
27
140
2
VF Forward Voltage = 1.2 V Maximum @ IF = 200 mA for all types
Notes:
1. The zener voltage (VZ) is tested under pulse condition.
2. The dynamic resistance ZZT is measured by dividing the AC voltage drop across the device by the AC current
applied. The specified limits are for IZ(AC) = 0.1 IZ(DC) with AC frequency = 60Hz.
3. Type No. is as follows; TC2B1, TC2B2, TC36-3.
Number: DB-238
Jun.2013/B
Page 4
TAK CHEONG ®
SEMICONDUCTOR
Typical Characteristics
600
500
400
300
200
100
0
1000
100
10
f = 1MHz
Ta = 25
℃
VR = 0V
VR = 2V
VR = 5V
VR = 20V
1
0
5
10
15
20
25
30
35
40
0
40
80
120
160
200
Temperature [
]
VZ - Reverse Voltage [V]
℃
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
1000
100
10
10000
Ta = 25
℃
Iz=1mA
Iz=2mA
Ta = 25
℃
Iz=5mA
Iz=10mA
100
1
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0
5
10
15
20
25
30
35
40
VZ - Reverse Voltage [V]
VF - Forward Voltage [mV]
Figure 4. Forward Current vs. Forward Voltage
Figure 3. Differential Impedance vs. Zener Voltage
Figure 5. Zener Current vs. Zener Voltage
Number: DB-238
Jun.2013/B
Page 5
TAK CHEONG ®
SEMICONDUCTOR
Package Outline
Package
Case Outline
DO-35
DO-35
DIM
Millimeters
Inches
Min
Max
Min
Max
A
B
C
D
0.46
3.05
0.55
5.08
0.018
0.120
1.000
0.060
0.022
0.200
1.500
0.090
25.40
1.53
38.10
2.28
Notes:
1. All dimensions are within JEDEC standard.
2. DO35 polarity denoted by cathode band.
Number: DB-238
Jun.2013/B
Page 6
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