TC1N4755A.TR
更新时间：2024-09-18 17:43:44
品牌：TAK_CHEONG
描述：Zener Diode, 43V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
概述
规格参数
数据手册TC1N4755A.TR 概述
Zener Diode, 43V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2 齐纳二极管
TC1N4755A.TR 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | DO-41 |
| 包装说明： | O-LALF-W2 | 针数： | 2 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.50 | 风险等级： | 5.24 |
| 外壳连接： | ISOLATED | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | ZENER DIODE |
| 最大动态阻抗： | 70 Ω | JEDEC-95代码： | DO-41 |
| JESD-30 代码： | O-LALF-W2 | JESD-609代码： | e3 |
| 元件数量： | 1 | 端子数量： | 2 |
| 最高工作温度： | 200 °C | 封装主体材料： | GLASS |
| 封装形状： | ROUND | 封装形式： | LONG FORM |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性： | UNIDIRECTIONAL |
| 最大功率耗散： | 1 W | 认证状态： | Not Qualified |
| 标称参考电压： | 43 V | 子类别： | Voltage Reference Diodes |
| 表面贴装： | NO | 技术： | ZENER |
| 端子面层： | Tin (Sn) | 端子形式： | WIRE |
| 端子位置： | AXIAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 最大电压容差： | 5% | 工作测试电流： | 6 mA |
| Base Number Matches： | 1 |
TC1N4755A.TR 数据手册
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TAK CHEONG
SEMICONDUCTOR
1 Watt DO-41 Hermetically
Sealed Glass Zener Voltage
Regulators
AXIAL LEAD
DO41
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Parameter
Value
Units
DEVICE MARKING DIAGRAM
°C
Storage Temperature Range
-65 to +200
+200
1.0
L
Maximum Junction Operating Temperature
Total Device Dissipation
°C
Watt
°C / W
°C / W
°C
1N
47
xx
T
Thermal Resistance Junction to Lead
Thermal Resistance Junction to Ambient
Lead Temperature (1/16” from case for 10 seconds)
53.5
100
L
: Logo
Device Code
: TC1N47xxT
+230
VZ Tolerance (T) : A = ±5%
These ratings are limiting values above which the serviceability of the diode may be impaired.
C = ±2%
Specification Features:
Zener Voltage Range 3.3 to 56 Volts
DO-41 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Cathode
Anode
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
ELECTRICAL SYMBOL
Electrical Characteristics
TA = 25°C unless otherwise noted
Z
ZT @ IZT
(Ω)
Max
Z
ZK @ IZK
(Ω)
Max
IR @ VR
(µA)
Max
VZ @ IZT
IZT
(mA)
IZK
VR
(Volts)
Device Type
(Volts)
(mA)
Nominal
TC1N4728A
TC1N4729A
TC1N4730A
TC1N4731A
TC1N4732A
TC1N4733A
TC1N4734A
TC1N4735A
TC1N4736A
TC1N4737A
TC1N4738A
TC1N4739A
TC1N4740A
TC1N4741A
TC1N4742A
TC1N4743A
TC1N4744A
TC1N4745A
TC1N4746A
TC1N4747A
TC1N4748A
TC1N4749A
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
76
69
10
10
9
1
1
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
700
750
750
750
100
100
50
10
10
10
10
10
10
10
10
10
10
5
1
1
64
1
1
58
9
1
1
53
8
1
1
49
7
1
1
45
5
1
2
41
2
1
3
37
3.5
4
1
4
34
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
5
31
4.5
5
6
28
7
25
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
11
23
8
12
21
9
5
13
19
10
14
16
20
22
23
25
5
15
17
5
16
15.5
14
5
18
5
20
12.5
11.5
10.5
5
22
5
24
5
November 2005 / C
Neil Solano
Page 1
®
TAK CHEONG
SEMICONDUCTOR
Electrical Characteristics
TA = 25°C unless otherwise noted
ZZT @ IZT
(Ω)
Max
ZZK @ IZK
(Ω)
Max
IR @ VR
(µA)
Max
VZ @ IZT
(Volts)
Nominal
Device
Type
IZT
(mA)
IZK
(mA)
VR
(Volts)
TC1N4750A
TC1N4751A
TC1N4752A
TC1N4753A
TC1N4754A
TC1N4755A
TC1N4756A
TC1N4757A
TC1N4758A
27
30
33
36
39
43
47
51
56
9.5
8.5
7.5
7
35
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
750
5
5
5
5
5
5
5
5
5
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
40
1000
1000
1000
1000
1500
1500
1500
2000
45
50
6.5
6
60
70
5.5
5
80
95
4.5
110
VF Forward Voltage = 1.2 V Maximum @ IF = 200 mA for all types
Notes:
1. The device numbers listed have a standard tolerance on the nominal zener voltage of ±5%. Device tolerance of ±2% is
indicated by a “C” instead of an “A”.
2. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter
voltage tolerances, contact your nearest Tak Cheong’s representative.
3. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to
10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK.
Electrical Symbol Definition
Typical Characteristics
I
Symbol
Parameter
(mA)
VZ
IZT
ZZT
IZK
ZZK
IR
Reverse Zener Voltage @ IZT
Reverse Current
IF
Maximum Zener Impedance @ IZT
Reverse Current
(mV)
V
Z VR
V
IR
IZT
VF
(V)
Maximum Zener Impedance @ IZK
Reverse Leakage Current @ VR
Breakdown Voltage
VR
IF
Forward Current
(nA)
(mA)
VF
Forward Voltage @ IF
Ordering Information
Device
Package
Bulk
Quantity
5,000
TC1N47xxA
TC1N47xxA.TB
Tape and Ammo
Tape and Reel
3,000
TC1N47xxA.TR
TC1N47xxA
5,000
Others (…contact Tak Cheong sales representatives)
Axial-Lead Tape Packaging Standards
This axial-lead component’s packaging requirements use in automatic testing and assembly equipment. And this standard practices for
lead-tape packaging of axial-lead components meets the requirements of EIA Standard RS-296-D “Lead-taping of Components on Axial
Lead Configuration for Automatic Insertion”.
November 2005 / C
Neil Solano
Page 2
®
TAK CHEONG
SEMICONDUCTOR
Tape & Reel Packaging Information
Tape & Reel
Outline
DIM
D1
Millimeters
356
30
D2
Reel Dimensions
D3
84
W1
77.5
PKG Type
DO-41
Quantity Per Reel
Quantity Per Reel
5,000
November 2005 / C
Neil Solano
Page 3
®
TAK CHEONG
SEMICONDUCTOR
Tape & Ammo Packaging Information
Tape & Ammo
Outline
250mm x 80mm x 80mm
PKG Type
DO-41
Quantity Per Box
Quantity Per Ammo
Box
3,000
Taping Dimensions
Description
Standard Width
Millimeters
26
52
Tape Spacing (B)
Component Pitch (C)
Untaped Lead (L1 – L2)
Glass Offset (F)
52 ± 0.69
5.08 ± 0.4
± 0.69
26 +0.5 / -0
5.08 ± 0.4
± 0.69
± 0.69
± 0.69
Bent (D)
1.2 Max
1.2 Max
Tape Width (G)
6.138 ± 0.576
0.55 Max
3.2 Min
0
6.138 ± 0.576
0.55 Max
3.2 Min
0
Tape Mismatch (E)
Taped Lead (G)
Lead Beyond Tape (H)
November 2005 / C
Neil Solano
Page 4
®
TAK CHEONG
SEMICONDUCTOR
Bulk Packaging Information
190mm x 150mm x 65mm
Quantity Per Plastic Bag
DO-41
500 x 10 Plastic Bag
Bulk Outline
Plastic Bag
PKG Type
DO-41
Quantity Per Box
Quantity Per Box
5,000
November 2005 / C
Neil Solano
Page 5
®
TAK CHEONG
SEMICONDUCTOR
Package Outline
Package
Case Outline
D0-41
DO-41
DIM
Millimeters
Inches
Min
Max
Min
Max
0.72
4.07
0.86
5.20
---
0.028
0.160
1.000
0.080
0.034
0.205
---
A
B
C
D
25.40
2.04
2.71
0.107
Notes:
1. All dimensions are within JEDEC standard.
2. DO41 polarity denoted by cathode band.
November 2005 / C
Neil Solano
Page 6
TC1N4755A.TR 相关器件
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| TC1N4755ARL | TAK_CHEONG | Zener Diode, | 获取价格 |
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| TC1N4755ATA | TAK_CHEONG | 暂无描述 | 获取价格 |
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| TC1N4755ATA2 | TAK_CHEONG | Zener Diode, | 获取价格 |
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| TC1N4755ATB | TAK_CHEONG | Zener Diode, | 获取价格 |
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| TC1N4755C | TAK_CHEONG | Zener Diode, 43V V(Z), 2%, 1W, Silicon, Unidirectional, DO-41, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | 获取价格 |
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| TC1N4755C.TB | TAK_CHEONG | Zener Diode, 43V V(Z), 2%, 1W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2 | 获取价格 |
|
| TC1N4755C.TR | TAK_CHEONG | Zener Diode, 43V V(Z), 2%, 1W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2 | 获取价格 |
|
| TC1N4755CTA2 | TAK_CHEONG | Zener Diode, | 获取价格 |
|
| TC1N4755CTB | TAK_CHEONG | Zener Diode, | 获取价格 |
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| TC1N4755CTR | TAK_CHEONG | Zener Diode, | 获取价格 |
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