TC1N4734CTR [TAK_CHEONG]
Zener Diode,;
| 型号： | TC1N4734CTR |
| 厂家： | 
Tak Cheong Electronics (Holdings) Co.,Ltd |
| 描述： | Zener Diode, |
| 文件： | 总5页 (文件大小：449K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
SEMICONDUCTOR
1 Watt DO-41 Hermetically
Sealed Glass Zener Voltage
Regulators
AXIAL LEAD
DO41
Absolute Maximum Ratings TA = 25°C unless otherwise noted
DEVICE MARKING DIAGRAM
Parameter
Value
Units
°C
Storage Temperature Range
-65 to +200
+200
1.0
L
1N
47
xx
T
Maximum Junction Operating Temperature
Total Device Dissipation
°C
Watt
Thermal Resistance Junction to Lead
Thermal Resistance Junction to Ambient
53.5
°C / W
°C / W
100
L
: Logo
Device Code
VZ Tolerance (T) : A = ±5%
: TC1N47xxT
These ratings are limiting values above which the serviceability of the diode may be impaired.
C = ±2%
Specification Features:
.
.
.
.
.
.
.
.
Zener Voltage Range 3.3 to 56 Volts
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
RoHS Compliant
Cathode
Anode
ELECTRICAL SYMBOL
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
Electrical Characteristics
TA = 25°C unless otherwise noted
ZZT @ IZT
()
Max
ZZK @ IZK
()
Max
IR @ VR
(A)
Max
VZ @ IZT
(Volts)
Nominal
IZT
(mA)
IZK
(mA)
VR
(Volts)
Device Type
TC1N4728A
TC1N4729A
TC1N4730A
TC1N4731A
TC1N4732A
TC1N4733A
TC1N4734A
TC1N4735A
TC1N4736A
TC1N4737A
TC1N4738A
TC1N4739A
TC1N4740A
TC1N4741A
TC1N4742A
TC1N4743A
TC1N4744A
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
10
10
9
1
1
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
100
100
50
10
10
10
10
10
10
10
10
10
10
5
1
1
1
1
9
1
1
8
1
1
7
1
1
5
1
2
2
1
3
3.5
4
1
4
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
5
4.5
5
6
7
7
7.6
8.4
9.1
9.9
11.4
11
8
12
9
5
13
10
14
5
15
5
Number: DB-031
July 2010/ G
Page 1
®
SEMICONDUCTOR
Electrical Characteristics
VZ @ IZT
TA = 25°C unless otherwise noted
ZZT @ IZT
()
ZZK @ IZK
()
Max
IR @ VR
(A)
Max
IZT
(mA)
IZK
VR
(Volts)
Device Type
(Volts)
(mA)
Nominal
Max
TC1N4745A
TC1N4746A
TC1N4747A
TC1N4748A
TC1N4749A
TC1N4750A
TC1N4751A
TC1N4752A
TC1N4753A
TC1N4754A
TC1N4755A
TC1N4756A
TC1N4757A
TC1N4758A
16
18
20
22
24
27
30
33
36
39
43
47
51
56
15.5
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
700
5
5
5
5
5
5
5
5
5
5
5
5
5
5
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
700
12.5
11.5
10.5
9.5
8.5
7.5
7
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
6.5
6
5.5
5
4.5
VF Forward Voltage = 1.2 V Maximum @ IF = 200 mA for all types
Notes:
1. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a standard tolerance on the nominal zener voltage of ± 5%. Device tolerance of 2% is indicated by a
“C” instead of an “A”.
2. SPECIALS AVAILABLE INCLUDE
Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery,
contact you nearest Tak Cheong representative.
3. ZENER VOLTAGE (VZ) MEASUREMENT
The zener voltage (VZ) is tested under pulse condition.
4. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from the 60 cycle AC voltage, which results when an AC current having an RMS value equal to 10%
of the DC zener current (IZT or IZK) is superimposed on IZT or IZK.
Number: DB-031
July 2010/ G
Page 2
®
SEMICONDUCTOR
Typical Characteristics
1000
100
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
f = 1MHz
VR = 0V
VR = 2V
Ta = 25
℃
VR = 5V
VR = 20V
VR = 30V
1
0
5
10 15 20 25 30 35 40 45 50 55 60
0
20
40
60
80
100
120
140
160
180
200
VZ - Reverse Voltage [V]
Temperature [
]
℃
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
1000
100
10
1000
Iz=1mA
Iz=2mA
Ta = 25
℃
Ta = 25
℃
Iz=5mA
Iz=10mA
100
10
1
1
0.1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
10
20
30
40
50
60
VZ - Reverse Voltage [V]
VF - Forward Voltage [V]
Figure 4. Forward Current vs. Forward Voltage
Figure 3. Differential Impedance vs. Zener Voltage
1000
100
100
10
Ta = 25
℃
Ta = 25
1
℃
10
1
0.1
0.01
0.1
10
20
30
40
50
60
70
0
3
6
9
12
15
VZ - Reverse Voltage [V]
VZ - Reverse Voltage [V]
Figure 6. Reverse Current vs. Reverse Voltage
Figure 5. Reverse Current vs. Reverse Voltage
Number: DB-031
July 2010/ G
Page 3
®
SEMICONDUCTOR
Package Outline
Package
Case Outline
D0-41
DO-41
DIM
Millimeters
Inches
Min
Max
Min
Max
0.68
3.70
0.81
4.25
---
0.027
0.146
1.000
0.083
0.032
0.167
---
A
B
C
D
25.40
2.10
2.60
0.102
Notes: .
1. DO41 polarity denoted by cathode band.
Number: DB-031
July 2010/ G
Page 4
TAK CHEONG ®
DISCLAIMER NOTICE
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
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