BC856A [TAITRON]
SMD General Purpose Transistor (PNP); SMD通用晶体管（ PNP ）
| 型号： | BC856A |
| 厂家： | 
TAITRON COMPONENTS INCORPORATED |
| 描述： | SMD General Purpose Transistor (PNP) |
| 文件： | 总4页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BC856 SERIES
PNP GENERAL PURPOSE TRANSISTORS
Unit: inch (mm)
SOT- 23
225 mW
POWER
65/45/30 Volts
VOLTAGE
FEATURES
General Purpose Amplifier Applications
NPN Epitaxial Silicon, Planar Design
Collector Current IC = -100mA
.119(3.00)
.110(2.80)
Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series
Pb free product are available : 99% Sn above can meet RoHS environment
substance directive request
.083(2.10)
.066(1.70)
.006(.15)
.002(.05)
MECHANICAL DATA
.006(.15)MAX
Case: SOT-23
.020(.50)
.014(.35)
Terminals : Solderable per MIL-STD-750,Method 2026
Approx Weight: 0.008 grams
Device Marking :
BC856A=56A
BC856B=56B
BC857A=57A
BC857B=57B
BC857C=57C
BC858A=58A
BC858B=58B
BC858C=58C
BC859B=59B
BC859C=59C
3
COLLECTOR
Top View
3
Collector
1
BASE
1
Base
2
Emitter
2
EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL BC856
BC857
BC858
BC859 UNITS
V
Collector-Emitter Voltage
V
CEO
CBO
EBO
-65
-80
-45
-50
-30
Collector-Base Voltage
V
V
-30
V
V
Emitter-Base Voltage
-5
Collector Current-Continuous
Max Power Dissipation (Note 1)
Operating Junction and Storage Temperature Range
I
C
-100
225
mA
mW
P
TOT
T
J
,TSTG
-50 TO +150
OC
PAGE . 1
STAD-JUL.11.2005
BC856 SERIES
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Value
UNIT
Thermal Resistance , Junction to Ambient
RΘJA
556
OC /W
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout.
ELECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted)
PARAMETER
Collector - Emitter Breakdown Voltage
(IC=-10mA, IB=0)
SYMBOL
MIN.
TYP.
MAX.
UNIT
BC856A,B
BC857A,B,C
-65
-45
-30
-80
-50
-30
-5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V CE0
(BR)
V
BC858A,B,C, BC859B,C
BC856A,B
Collector - Base Breakdown Voltage
(IC=-1 0 µA, IE=0)
BC857A,B,C
V
V
CB0
V
(BR)
BC858A,B,C, BC859B,C
Emitter - Base Breakdown Voltage (IE=-1µA, IC=0)
Emitter-Base Cutoff Current (VEB=-5V)
EB0
(BR)
V
IEBO
-
-
-100
nA
Collector-Base Cutoff Current (VCB=-30V, IE=0 )
-
-
-
-
-
-
-
-15
nA
uA
ICBO
TJ=150 OC
BC856A, BC857A, BC858A
-4.0
DC Current Gain
90
150
270
-
-
-
(IC=-1 0 µA, VCE=-5V)
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
hFE
-
(IC=-2.0mA, VCE=-5V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
110
180
290
520
-
220
450
800
-0.3
-0.65
-
200
420
Collector – Emitter Saturation Voltage (IC=-10mA, IB=-0.5mA)
(IC=-100mA, IB=-5.0mA)
-
VCE(SAT)
V
V
-
-
Base – Emitter Saturation Voltage
(IC=-10mA, IB=-0.5mA)
(IC=-100mA, IB=-5.0mA)
(IC=-2.0mA, VCE=-5.0V)
(IC=-10mA, VCE=-5.0V)
-
-0.7
-0.9
-
VBE(SAT)
-
-0.60
-
-
Base – Emitter On Voltage
-0.75
-0.82
VBE(ON)
V
-
CCB
Collector - Base Capacitance
(VCB=-10V, IE=0, f=1MHz)
-
-
-
4.5
-
pF
Current-Gain - Bandwidth Product
(IC=-10mA, VCE=-5.0V, f=100MHz)
FT
200
MHz
PAGE . 2
STAD-JUL.11.2005
BC856 SERIES
ELECTRICAL CHARACTERISTICS CCUURRVVEESS
600
0.9
0.8
TJ=150OC
500
TJ=25OC
0.7
0.6
0.5
0.4
0.3
0.2
TJ=100OC
400
E
F
TJ=100OC
h
300
TJ=25OC
200
TJ=15 OC
VCE = -5V
10
VCE=-5V
100
0.1
0
0
0.01
0.1
1
10
100
0.01
0.1
1
100
CCoolllleeccttoorr CCuurrrreenntt,,IIC((mmAA))
CCoolllleeccttoorr CCuurrrreenntt,, IIC((mmAA))
Fig.2- TYPICAL VBE(ON) vs. Collector Current
Fig.1- TYPICAL hFE vs. Collector Current
14
0.3
12
10
0.25
0.2
CIB (EB)
(
V
)
T
)
8
6
4
TJ=100OC
C
E
(
A
0.15
0.1
V
TJ=150OC
COB (BC)
TJ=25OC
0.05
0
2
0
0.01
0.1
1
10
100
0.1
1
10
100
CCoolllleeccttoorr CCuurrrreenntt,,IIC((mmAA))
Reverse Voltage,VR(V)
Fig.4- TYPICAL CAPACITANCES vs. REVERSE VOLTAGE
Fig.3- TYPICAL VCE(SAT) vs. Collector Current
PAGE . 3
STAD-JUL.11.2005
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation
of the device in the application. The information will help the customer's technical experts determine that the device is
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products
and improvements in products and product characterization are constantly in process. Therefore, the factory should be
consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract. The information presented is
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
STAD-JUN.29.2005
PAGE . 4
相关型号：
BC856A-GS08
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
VISHAY
BC856A-TAPE-13
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC856A-TAPE-7
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明