MBR1045 [SYNSEMI]
SCHOTTKY BARRIER RECTIFIER DIODES; 肖特基势垒整流二极管
| 型号： | MBR1045 |
| 厂家： | 
SYNSEMI, INC. |
| 描述： | SCHOTTKY BARRIER RECTIFIER DIODES |
| 文件： | 总2页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SCHOTTKY BARRIER
RECTIFIER DIODES
MBR1035 ~ MBR1060
TO-220AC
PRV : 35~60 Volts
Io : 10 Amperes
0.154(3.91)DIA.
0.148(3.74)
0.185(4.70)
0.175(4.44)
0.415(10.54)MAX.
0.055(1.39)
0.045(1.14)
FEATURES :
0.113(2.87)
0.103(2.62)
* Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
* Metal silicon junction, majority carrier conduction
* Low power loss, high efficiency
0.145(3.68)
0.135(3.43)
0.603(15.32)
0.573(14.55)
0.635(16.13)
0.625(15.87)
0.350(8.89)
0.330(8.39)
1
2
* Guardring for overvoltage protection
* For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
* High temperature soldering : 250°C/10 seconds,
0.25" (6.35mm) from case
0.160(4.06)
0.140(3.56)
0.560(14.22)
0.530(13.46)
PIN 1
CASE
PIN 2
0.037(0.94)
0.027(0.68)
0.022(0.56)
0.014(0.36)
0.205(520)
0.195(4.95)
* Pb / RoHS Free
MECHANICAL DATA :
Dimensions in inches and ( millimeters )
* Case : JEDEC TO-220AC molded plastic body
* Terminals: Plated leads, solderable per
MIL-STD-750 Method 2026
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ( Tc = 25 °C unless otherwise noted)
RATINGS
SYMBOL MBR1035 MBR1045 MBR1050 MBR1060 UNIT
VRRM
VRWM
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
35
35
35
45
45
45
50
50
50
60
60
60
V
V
V
A
IF(AV)
Maximum Average Forward Rectified Current (See Fig. 1)
Peak Forward Surg Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage (Note 1)
at IF = 10 A, TC = 25 °C
10
IFSM
150
A
VF
-
0.80
0.70
V
0.57
at IF = 10 A, TC = 125 °C
0.10
15
Maximum Average Reverse Current at
Rate Peak Reverse Voltage
TC = 25 °C
IR
mA
T C = 125 °C
Typical Thermal Resistance
RθJC
TJ
2.0
°C/W
°C
Operating Junction Temperature Range
Storage Temperature Range
-65 to + 150
-65 to + 175
TSTG
°C
Note :
(1) Pulse test : 300 µs pluse width, 1% duty cycle
Rev. 01 : February 22, 2006
Page 1 of 2
RATING AND CHARACTERISTIC CURVES ( MBR1035 ~ MBR1060 )
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
10
150
8
6
4
2
0
120
90
MBR1035 & MBR1045
MBR1050 & MBR1060
60
TJ =TJmax
30
8.3 ms single half sine-wave
(JEDEC Method)
Resistive or Inductive Load
25 50 75
0
0
100
125
150
1
2
4
6
10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, (°C)
FIG.3 - TYPICAL INSTANTANEOUS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FORWARD CHARACTERISTICS
100
10
TJ = 125 °C
Pluse Width = 300 µs
1% Duty Cycle
TJ = 25 °C
1.0
10
MBR1035 & MBR1045
MBR1050 & MBR1060
0.1
MBR1035 & MBR1045
1.0
0.1
MBR1050 & MBR1060
0.01
TJ = 25 °C
0.01
0
0.001
0
20
40
60
80
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD
VOLTAGE, (V)
Rev. 01 : February 22, 2006
Page 1 of 2
相关型号：
MBR1045-G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
MBR1045-HE3/45
DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
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