BR1004 [SYNSEMI]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
BR1004
型号: BR1004
厂家: SYNSEMI, INC.    SYNSEMI, INC.
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

文件: 总2页 (文件大小:27K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON BRIDGE RECTIFIERS  
BR10  
BR1000 - BR1010  
PRV : 50 - 1000 Volts  
Io : 10 Amperes  
0.520 (13.20)  
0.480 (12.20)  
0.158 (4.00)  
AC  
0.142 (3.60)  
FEATURES :  
0.77 (19.56)  
0.73 (18.54)  
* High current capability  
* High surge current capability  
* High reliability  
0.290 (7.36)  
0.210 (5.33)  
AC  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
0.052 (1.32)  
0.048 (1.22)  
* Pb / RoHS Free  
0.75 (19.1)  
Min.  
MECHANICAL DATA :  
0.30 (7.62)  
0.25 (6.35)  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per  
MIL - STD 202 , Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 6.1 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherwise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010 UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
10  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC Blocking Voltage  
100  
1000  
IF(AV)  
Maximum Average Forward Current Tc=55°C  
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Current Squared Time at t < 8.3 ms.  
IFSM  
300  
A
I2t  
VF  
A2S  
V
160  
1.0  
Maximum Forward Voltage per Diode at IF = 5 A  
IR  
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Typical Thermal Resistance (Note 1)  
Ta = 25 °C  
mA  
mA  
IR(H)  
200  
Ta = 100 °C  
2.5  
°C/W  
°C  
RqJC  
TJ  
Operating Junction Temperature Range  
Storage Temperature Range  
- 40 to + 150  
- 40 to + 150  
TSTG  
°C  
Notes :  
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.  
Page 1 of 2  
Rev. 02 : March 24, 2005  
RATING AND CHARACTERISTIC CURVES ( BR1000 - BR1010 )  
FIG.1 - DERATING CURVE FOR OUTPUT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
RECTIFIED CURRENT  
FORWARD SURGE CURRENT  
300  
12  
10  
8
250  
200  
TJ = 50 °C  
6
150  
100  
4
8.3 ms SINGLE HALF SINE WAVE  
50  
HEAT-SINK MOUNTING, Tc  
3.2" x 3.2" x 0.12" THK.  
2
JEDEC METHOD  
(8.2cm x8.2cm x 0.3cm) Al.-PLATE  
0
0
0
25  
50  
75  
100  
125  
150  
175  
1
4
6
10  
20  
40  
60 100  
2
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE, ( C)  
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
PER DIODE  
PER DIODE  
10  
100  
Pulse Width = 300 ms  
1 % Duty Cycle  
TJ = 100 °C  
1.0  
10  
0.1  
1.0  
TJ = 25 °C  
TJ = 25 °C  
0.1  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  
0.01  
0.4  
0.8  
1.0  
1.2  
1.4  
1.6  
0.6  
1.8  
FORWARD VOLTAGE, VOLTS  
Page 2 of 2  
Rev. 02 : March 24, 2005  

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