BA159 [SYNSEMI]
FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管
| 型号： | BA159 |
| 厂家： | 
SYNSEMI, INC. |
| 描述： | FAST RECOVERY RECTIFIER DIODES |
| 文件： | 总2页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FAST RECOVERY
RECTIFIER DIODES
BA157 - BA159
PRV : 400 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
1.00 (25.4)
* High current capability
* High surge current capability
* High reliability
0.107 (2.7)
MIN.
0.080 (2.0)
* Low reverse current
* Low forward voltage drop
0.205 (5.2)
0.166 (4.2)
* Fast switching for high efficiency
* Pb / RoHS Free
1.00 (25.4)
MECHANICAL DATA :
0.034 (0.86)
MIN.
0.028 (0.71)
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
VRRM
BA157
400
BA158
600
BA159
1000
700
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRMS
280
420
Maximum DC Blocking Voltage
Maximum Average Forward Current
VDC
400
600
1000
IF(AV)
1.0
A
0.375"(9.5mm) Lead Length
Peak Forward Surge Current,
Ta = 45 °C
IFSM
35
A
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 Amp.
VF
IR
1.3
5.0
100
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
mA
mA
ns
pf
IR(H)
Trr
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
150
250
CJ
20
TJ
- 65 to + 150
- 65 to + 150
°C
°C
Storage Temperature Range
TSTG
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( BA157 - BA159 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50W
10W
+ 0.5 A
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
+
- 0.25 A
50 Vdc
(approx.)
OSCILLOSCOPE
( NOTE 1 )
1 W
- 1.0 A
SET TIME BASE FOR 50-100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
35
28
1.0
0.8
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
0.6
0.4
0.2
21
14
7
RESISTIVE OR INDUCTIVE LOAD
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( C)
°
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
20
10
10
Pulse Width = 300 ms
TJ = 100 °C
2% Duty Cycle
1.0
1.0
TJ = 25 °C
0.1
0.1
TJ = 25 °C
0.01
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
40
60
80
100
120
140
20
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 24, 2005
相关型号：
BA159-E2
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
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