SPP8637 [SYNC-POWER]
P-Channel Enhancement Mode MOSFET;
| 型号： | SPP8637 |
| 厂家： | 
SYNC POWER CROP. |
| 描述： | P-Channel Enhancement Mode MOSFET |
| 文件： | 总6页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP8637
P-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
MB/VGA/Vcore/PD Application
DC/DC Power System
Load Switch
The SPP8637 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology. The SPP8637 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
FEATURES
PIN CONFIGURATION
PPAK3X3
-30V/-30A, RDS(ON)=8.5mΩ@VGS=-10V
-30V/-20A, RDS(ON)=14.5mΩ@VGS=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
PPAK3X3 package design
PART MARKING
2017/1/05 Ver.1
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SPP8637
P-Channel Enhancement Mode MOSFET
PPAK3X3 PIN DESCRIPTION
Pin
Symbol
Description
Source
Source
Source
Gate
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Part Number
Package
Part Marking
SPP8637DN8RGB
PPAK3X3
SPP8637
※ SPP8637DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-30
V
Gate –Source Voltage
VGSS
ID
±20
V
A
TA=25℃
Continuous Drain Current
-50
-32
TA=100℃
Pulsed Drain Current
IDM
-200
59
A
W
℃
Power Dissipation
TC=25℃
PD
TJ
Operating Junction Temperature
Storage Temperature Range
150
TSTG
-55/150
62
℃
Thermal Resistance-Junction to Ambient (t≦10s)
RθJA
℃/W
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SPP8637
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
-30
-1.0
V
-2.5
IGSS
VDS=0V,VGS=±20V
±100 nA
VDS=-30V,VGS=0V
-1
Zero Gate Voltage Drain Current
IDSS
uA
-10
VDS=-24V,VGS=0V, TJ=100℃
On-State Drain Current
ID(on)
VDS≥-5V,VGS =-10V
-100
A
VGS= -10V,ID=-30A
VGS=-4.5V,ID=-20A
7
11.4
8.5
14.5
Drain-Source On-Resistance
RDS(on)
mΩ
Gate Resistance
Rg
gfs
VDS=0V, VGS=0V, f=1MHz
VDS=-10V,ID=-3A
8.5
14
12
Forward Transconductance
Diode Forward Voltage
S
VSD
IS=-1A,VGS =0V
-1
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
35
11
VDS=-15V, VGS=-4.5V
ID= -10A
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
nC
pF
10.5
3300
410
280
24.5
10.5
156
50
VDS=-15VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
VDD=-15V,
ID=-1A,VGS=-10V, RG=6Ω
nS
td(off)
tf
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SPP8637
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP8637
P-Channel Enhancement Mode MOSFET
PPAK3X3 PACKAGE OUTLINE
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SPP8637
P-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.
© The SYNC Power logo is a registered trademark of SYNC Power Corporation
© 2016 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
© http://www.syncpower.com
2017/1/05 Ver.1
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