LND250K1-G [SUPERTEX]
Small Signal Field-Effect Transistor, 0.013A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SAME AS SOT-23, 3 PIN;
| 型号： | LND250K1-G |
| 厂家： | 
Supertex, Inc |
| 描述： | Small Signal Field-Effect Transistor, 0.013A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SAME AS SOT-23, 3 PIN 输入元件 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LND250
N-Channel Depletion-Mode
MOSFET
Ordering Information
Order Number / Package
TO-236AB*
Product marking for SOT-23:
BVDSX
/
RDS(ON)
(max)
IDSS
(min)
BVDGX
NDE❋
500V
1.0KΩ
1.0mA
LND250K1
where ❋ = 2-week alpha date code
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Features
Advanced DMOS Technology
❏
❏
❏
❏
❏
❏
❏
ESD gate protection
TheLND2isahighvoltageN-channeldepletionmode(normally-
on) transistor utilizing Supertex’s lateral DMOS technology. The
gate is ESD protected.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
The LND2 is ideal for high voltage applications in the areas of
normally-on switches, precision constant current sources, volt-
age ramp generation and amplification.
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
Applications
❏
❏
❏
❏
❏
❏
Solid state relays
Package Options
Normally-on switches
Converters
Power supply circuits
Constant current sources
Input protection circuits
Source
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSX
BVDGX
±20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Gate
Drain
Operating and Storage Temperature
-55°C to +150°C
300°C
TO-236AB
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
(SOT-23)
top view
Note: See Package Outline section for dimensions.
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
LND250
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
°C/W
θja
°C/W
IDR
IDRM
*
@TA = 25°C
TO-236AB
13mA
30mA
0.36W
200
350
13mA
30mA
* ID (continuous) is limited by max rated Tf.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
500
-1.0
Typ
Max
Unit
V
Conditions
BVDSX
Drain-to-Source Breakdown Voltage
VGS = -10V, ID = 1.0mA
VDS = 25V, ID = 100nA
VDS = 25V, ID = 100nA
VGS = ±20V, VDS = 0V
VGS = -10V, VDS = 450V
VGS(OFF) Gate-to-Source OFF Voltage
-3.0
5.0
V
∆VGS(OFF) Change in VGS(OFF) with Temperature
mV/°C
nA
IGSS
Gate Body Leakage Current
100
100
100
ID(OFF)
Drain-to-Source Leakage Current
nA
µA
VGS = -10V, VDS = 0.8V max rating
TA =125°C
IDSS
Saturated Drain-to-Source Current
1.0
1.0
3.0
1K
1.2
mA
Ω
VGS = 0V, VDS = 25V
VGS = 0V, ID = 0.5mA
VGS = 0V, ID = 0.5mA
VGS = 0V, ID = 1.0mA
RDS(ON) Static Drain-to-Source ON-State Resistance
850
∆RDS(ON) Change in RDS(ON) with Temperature
%/°C
m
Ω
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward Transconductance
Input Capacitance
2.0
7.5
10
3.5
1.0
VGS = -10V, VDS = 25V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
2.0
pF
0.5
0.09
0.45
0.1
VDD = 25V, ID = 1.0mA,
RGEN = 25Ω
µs
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
1.3
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
0.9
V
VGS = -10V, ISD = 1.0mA
VGS = -10V, ISD = 1.0mA
200
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
0V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
-10V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
12/13/010
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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