SB2200 [SUNMATE]
2.0A Plug-in Schottky diode 200V DO-15 series;
| 型号： | SB2200 |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 2.0A Plug-in Schottky diode 200V DO-15 series |
| 文件： | 总2页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB2150 - SB2200
SCHOTTKY BARRIER RECTIFIER DIODE
VOLTAGE RANGE: 150 - 200V
CURRENT: 2.0 A
Features
Low forward voltage drop
!
High current capability
!
!
A
B
A
High reliability
High surge current capability
!
Epitaxial construction
!
C
Mechanical Data
D
!
!
!
Case : DO-15 Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
DO-15
Min
Dim
A
Max
—
25.40
5.50
!
!
Polarity : Color band denotes cathode end
Mounting position : Any
B
7.62
0.889
3.60
C
0.686
2.60
Weight : 0.465 gram
!
D
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol
Unit
SB2150
Characteristic
SB2200
Volts
Volts
Maximum repetitive peak reverse voltage
Maximum RMS voltage
150
105
100
200
140
200
VRRM
VRMS
VDC
Maximum DC blocking voltage
Volts
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
I(AV)
2.0
Amp
IFSM
60.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
0.85
0.95
Maximum instantaneous forward voltage at 2.0A
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.2
2.0
80
TA=100 C
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
50.0
-65 to +150
TJ
Storage temperature range
C
TSTG
-65 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
2 of 2
www.sunmate.tw
RATINGAND CHARACTERISTIC CURVES (SB2150 THRU SB2200)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
2.4
2.0
1.6
1.2
50
10
3.0
1.0
0.8
0.4
0
0
20
40
60
80
100
120
140
160
180
200
LEAD TEMPERATURE,( C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
.01
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
30
8.3ms Single Half
Tj=25 C
Sine Wave
20
10
0
JEDEC method
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
50
1
5
10
100
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
10
700
600
500
400
Tj=100 C
1.0
300
200
100
0
.1
Tj=25 C
.01
.01
.05
.1
.5
1
5
10
50
100
0
20 40 60 80 100 120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE
REVERSE VOLTAGE,(V)
2 of 2
www.sunmate.tw
相关型号：
SB2202-E-TN3-R
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN
UTC
SB2202-P-TN3-R
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN
UTC
SB2202-Q-TN3-R
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN
UTC
©2020 ICPDF网 联系我们和版权申明