MURS36 [SUNMATE]
3.0A patch fast recovery diode 600V SMC series;
| 型号： | MURS36 |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 3.0A patch fast recovery diode 600V SMC series |
| 文件： | 总2页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURS305 - MURS360
SURFACE MOUNT SUPER FAST RECOVERY DIODES
VOLTAGE RANGE: 50 - 600V
CURRENT: 3.0 A
Features
!
Glass Passivated Die Construction
!
!
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
!
!
!
Low Power Loss
Super-Fast Recovery Time
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Plastic Case Material has UL Flammability
Classification Rating 94V-O
SMC/DO-214AB
B
Dim
Min
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
Max
Mechanical Data
A
B
C
D
E
G
H
J
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
A
J
C
!
!
Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
D
!
!
!
Weight: 0.21 grams (approx.)
G
H
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol MURS305 MURS310 MURS315 MURS320 MURS330 MURS340 MURS360 Unit
Characteristic
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RWM
50
35
100
70
150
105
200
140
300
210
400
280
600
420
V
R
V
R(RMS)
RMS Reverse Voltage
V
V
A
O
Average Rectified Output Current
@TL = 75°C
I
3.0
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
FSM
I
100
A
FM
Forward Voltage
@IF = 3.0A
V
0.95
1.25
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
500
RM
I
µA
rr
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
t
35
nS
pF
j
C
45
JL
ꢀ
R
16
°C/W
°C
j, STG
T T
Operating and Storage Temperature Range
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
www.sunmate.tw
1 of 2
100
MURS305-MURS320
10
MURS330-MURS340
MURS360
1.0
0.1
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0.01
0.6
1.0
1.4
1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
200
100
1000
8.3ms single half
sine-wave
100
10
10
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
0A
(+)
50V DC
Approx
-0.25A
(-)
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
2 of 2
www.sunmate.tw
相关型号：
MURS360-E3
DIODE 4 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rectifier Diode
VISHAY
MURS360-E3/57T
DIODE 4 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN, Rectifier Diode
VISHAY
MURS360-HE3
Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN
VISHAY
MURS360-HE3/9AT
4A, 600V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明