GS1008F [SUNMATE]

SURFACE MOUNT SILICON RECTIFIER DIODES;
GS1008F
型号: GS1008F
厂家: SUNMATE electronic Co., LTD    SUNMATE electronic Co., LTD
描述:

SURFACE MOUNT SILICON RECTIFIER DIODES

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GS1000F - GS1010F  
SURFACE MOUNT SILICON RECTIFIER DIODES  
VOLTAGE RANGE: 50 - 1000V  
CURRENT: 1.0 A  
Features  
For surface mounted applications  
Low profile package  
!
!
!
!
Ideal for automated placement  
High temperaturesoldering : 260°C /10  
seconds at terminals  
B
!
Glass Passivated Chip Junction  
C
E
Mechanical Data  
SMAF  
Dim Min Max Typ  
!
!
Case: SMAF,Molded Plastic  
Terminals: Solder Plated, Solderable  
D
A
B
C
D
E
H
L
4.75 4.85  
3.68 3.72  
4.80  
3.70  
2.60  
1.00  
H
per MIL-STD-750, Method 2026  
Polarity:Color band denotes cathode end  
Mounting Position:Any  
2.57  
2.63  
!
!
!
L
0.097 1.03  
1.38 1.42 1.40  
0.13 0.17 0.15  
0.63 0.67 0.65  
Weight:0.0018 ounce, 0.064 grams  
E
All Dimensions in mm  
A
TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Symbol  
GS1000F GS1002F GS1003F GS1004F GS1006F GS1008F GS1010F  
Characteristic  
Unit  
Marking  
FA  
FB  
FD  
FG  
FJ  
FK  
FM  
Maximum repetitive peak reverse voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
700  
V
V
Maximum RMS voltage  
VRMS  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
Maximum DC blocking voltage  
1000  
100  
VDC  
V
A
Maximum average forward rectified current  
I(AV)  
1.0  
25.0  
1.1  
at TA=65 C (NOTE 1)  
Peak forward surge current  
8.3ms single half sine-wave superimposed on  
IFSM  
A
V
rated load (JEDEC Method)  
TL=25 C  
VF  
IR  
Maximum instantaneous forward voltage at 1.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
10.0  
50.0  
µ
A
TA=125 C  
pF  
Typical junction capacitance (NOTE 2)  
Typical thermal resistance (NOTE 3)  
4
CJ  
RθJA  
K/W  
65  
Operating junction and storage temperature range  
TJ,TSTG  
-50 to +150  
C
Note:  
1.Averaged over any 20ms period.  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
3.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted  
1 of 2  
www.sunmate.tw  
100  
RATINGANDCHARACTERISTICCURVES  
40  
20  
10  
3.0  
2.5  
2.0  
4.0  
1.5  
1.0  
2.0  
1.0  
0.5  
0
0.4  
0.2  
0
50  
100  
150  
0.1  
0.4  
LEAD TEMPERATURE, OC  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
Fig.1FORWARDCURRENTDERATINGCURVE  
Fig.2-TYPICALINSTANTANEOUSFORWARD  
CHARACTERISTICS  
100  
100  
50  
10  
TJ  
= 25OC  
O
=125 C  
T
J
20  
10  
1.0  
O
TJ=75 C  
0.1  
5
2
1
O
TJ=25 C  
0.01  
10  
1000  
0.1  
1.0  
100  
REVERSE VOLTAGE, VOLTS  
0.001  
0
20  
40  
60  
80  
100  
PERCENT OF PEAK REVERSE VOLTAGE,%  
Fig.4TYPICALJUNCTIONCAPACITANCE  
Fig.3TYPICALREVERSECHARACTERISTICS  
2 of 2  
www.sunmate.tw  

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