ES3BB [SUNMATE]
3.0A patch fast recovery diode 100V SMB series;
| 型号： | ES3BB |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 3.0A patch fast recovery diode 100V SMB series 二极管 |
| 文件： | 总2页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES3AB - ES3JB
SURFACE MOUNT SUPER FAST RECOVERY DIODES
VOLTAGE RANGE: 50 - 600V
CURRENT: 3.0 A
Features
!
Glass Passivated Die Construction
!
!
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
!
!
Low Power Loss
Super-Fast Recovery Time
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
!
Plastic Case Material has UL Flammability
Classification Rating 94V-O
SMB(DO-214AA)
B
Dim
Min
3.30
4.06
1.91
0.15
5.00
0.10
0.76
2.00
Max
Mechanical Data
A
B
C
D
E
G
H
J
3.94
4.70
2.21
0.31
5.59
0.20
1.52
2.62
A
J
C
!
!
Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
D
!
!
!
Marking: Type Number
Weight: 0.093 grams (approx.)
G
H
All Dimensions in mm
E
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol ES3AB ES3BB ES3CB ES3DB ES3EB ES3GB ES3JB Unit
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RWM
50
35
100
70
150
105
200
300
210
400
280
600
420
V
R
V
R(RMS)
RMS Reverse Voltage
V
140
3.0
V
A
O
Average Rectified Output Current
@TL = 75°C
I
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
FSM
I
100
A
FM
Forward Voltage
@IF = 3.0A
V
0.95
1.25
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
500
RM
I
µA
rr
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
t
35
45
nS
pF
j
C
JL
ꢀ
R
16
°C/W
°C
j, STG
T T
Operating and Storage Temperature Range
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
1 of 2
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RATINGS AND CHARACTERISTIC CURVES ES3AB THRU ES3JB
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
3.0
2.4
1.8
1.2
0.6
0
80
60
Single Phase
Half Wave 60Hz
Resistive or
40
inductive Load
20
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
TJ=100 C
TJ=25 C
1
ES3AB-ES3DB
ES3EB-ES3GB
ES3JB
0.1
0.01
0.01
0
0.4
0.8
1.2
1.6
1.8
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
10
TJ=25 C
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
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