ER2DF [SUNMATE]
2.0A patch fast recovery diode 200V SMBF series;
| 型号： | ER2DF |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 2.0A patch fast recovery diode 200V SMBF series |
| 文件： | 总2页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ER2AF - ER2JF
SURFACE MOUNT SUPER FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 600V
CURRENT: 2.0 A
Features
!
!
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
!
!
!
Low Forward Voltage Drop, High Efficiency
Low Power Loss
Super-Fast Recovery Time
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
B
!
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
E
SMBF
Dim Min Max Typ
Mechanical Data
A
B
C
D
E
H
L
5.45 5.55 5.50
4.27 4.33 4.30
3.57 3.63 3.60
1.32 1.38 1.35
1.96 2.00 1.98
!
!
Case:SMBF , Molded Plastic
D
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
H
L
!
!
!
0.021 0.20
0.019
0.73 0.77 0.75
All Dimensions in mm
E
Weight: 0.0018 ounces,0.05grams
A
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol ER2AF ER2BF ER2CF ER2DF ER2EF ER2GF ER2JF Unit
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RWM
50
35
100
70
150
105
200
300
210
400
280
600
420
V
R
V
R(RMS)
RMS Reverse Voltage
V
140
2.0
V
A
O
Average Rectified Output Current
@TL = 75°C
I
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
FSM
I
50
A
FM
Forward Voltage
@IF = 2.0A
V
0.95
1.25
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
200
RM
I
µA
rr
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
t
35
62
nS
pF
j
C
JL
ꢀ
R
40
K/W
°C
j, STG
T T
Operating and Storage Temperature Range
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
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RATING AND CHARACTERISTIC CURVES ER2AF THRU ER2JF
trr
+0.5A
2.4
2.0
0
SINGLE PHASE HALF
WAVE 60Hz RESISTIVE
OR INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.3×0.3"(8.0×8.0mm)
COPPER PAD AREAS
1.6
1.2
0.8
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
0.4
0
-1.0
2.Rise Time = 10ns max.
1cm
0
20
40
60
80
100 120 140 160
SET TIME
BASE FOR
Source Impedance = 50 Ohms
¢J
LEAD TEMPERATURE,
50 ns/cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
TEST CIRCUIT DIAGRAM
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
50.0
1,000
ER2AF-ER2DF
¢J
10.0
TJ = 100
100
10
1
ER2EF-ER2GF
TJ = 75¢J
1.0
¢J
TJ = 25
ER2JF
0.1
¢J
TJ = 25
0.1
PULSE WIDTH = 300
s
£g
2% DUTY CYCLE
0.01
0
20
40
60
80
100
120
140
0.01
0.4 0.5
0.8 1.0 1.2 1.4
1.6 1.8
PERCENT OF RATED PEAK INVERSE VOLTAGE, VOLTS
REVERSE VOLTAGE, VOLTS
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
Fig. 4-TYPICAL FORWARD CHARACTERISTICS
60
50
60
50
40
30
8.3ms SINGLE HALF SINE WAVE
40
JEDEC METHOD
30
¢J
TJ = 25
20
10
f = 1.0MHz
20
10
Vsig = 50mVp-p
1
2
5
10
20
50
100
.1
.5
1
2
5
10 20
50
100 200
500 1000
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, VOLTS
Fig. 5-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
Fig. 6-TYPICAL JUNCTION CAPACITANCE
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