20MQ100NPBF [SUNMATE]

2.1A Patch Schottky diode 100V SMA series;


型号：	20MQ100NPBF
厂家：	SUNMATE electronic Co., LTD
描述：	2.1A Patch Schottky diode 100V SMA series 二极管
文件：	总3页 (文件大小：415K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

20MQ100NPBF

SURFACE MOUNT SCHOTTKY BARRIER DIODES

Features

Small foot print, surface mountable

Low forward voltage drop

High frequency operation

Guard ring for enhanced ruggedness

and long term

reliability

Lead (Pb)-free (“PbF” suffix)

SMA(DO-214AC)

Designed and qualified for industrial level

Dim

MinMax

Mechanical Data

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

2.1

UNITS

Rectangular waveform

100

t_p= 5 µs sine

2 Apk, T_J= 125 °C

Range

120

V_F

0.72

T_J

- 55 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

20MQ100NPbF

UNITS

Maximum DC reverse voltage

V_R

100

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 4

50 % duty cycle at T_C= 113 °C, rectangular waveform

On PC board 9 mm²island (0.013 mm thick copper pad area)

I_F(AV)

2.1

Maximum peak one cycle

non-repetitive surge current

See fig. 6

Followingany rated load

condition and with rated

5 µs sine or 3 µs rect. pulse

120

I_FSM

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 0.5 A, L = 8 mH

_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

1.0

0.5

1 of 3

www.sunmate.tw

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

0.91

0.85

0.78

0.72

0.68

0.63

0.1

UNITS

2 A

1.5 A

1 A

T_J= 25 °C

Maximum forward voltage drop

See fig. 1

(1)

V_FM

2 A

1.5 A

1 A

T_J= 125 °C

T_J= 25 °C

T_J= 125 °C

Maximum reverse leakage current

See fig. 2

(1)

I_RM

V_R= Rated V_R

Threshold voltage

V_F(TO)

r_t

0.52

78.4

T_J= T_Jmaximum

Forward slope resistance

Typical junction capacitance

Typical series inductance

Maximum voltage rate of change

mΩ

C_T

V_R= 10 V_DC, T_J= 25 °C, test signal = 1 MHz

Measured lead to lead 5 mm from package body

Rated V_R

L_S

2.0

dV/dt

10 000

V/µs

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

T_J⁽¹⁾, T_Stg

- 55 to 150

°C

Maximum thermal resistance,

junction to ambient

R_thJA

DC operation

°C/W

0.07

Approximate weight

Marking device

0.002

oz.

Case style SMA (similar D-64)

V2J

Note

dP_tot

(1)

------------- < -------------- thermal runaway condition for a diode on its own heatsink

dT_JR_thJA

2 of 3

www.sunmate.tw

100

T = 25° C

T = 150°C

100

Reverse Voltage - V (V)

T = 125°C

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

T = 25° C

160

150

140

130

120

110

100

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

Square wave (D=0.50)

rated Vr applied

see note (1)

0.1

0.4

0.6

0.8

1.2

1.4

1.6

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Averageforwardcurrent-I_F(AV)(A)

Forward Voltage Drop - V (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Fig. 4 - Maximum Average Forward Current vs.

Allowable Lead Temperature

T = 150°C

D = 0.20

D = 0.25

125°C

100°C

75°C

2.5

0.1

0.01

D = 0.33

D = 0.50

D = 0.75

1.5

2.5

RMS Limit

0.001

0.0001

50°C

25°C

0.5

100

0.5

1.5

Reverse Voltage - V (V)

Averageforwardcurrent-I_F(AV)(A)

Fig. 2 - Typical Peak Reverse Current vs.

Reverse Voltage

Fig. 5 - Maximum Average Forward Dissipation vs.

Average Forward Current

3 of 3

www.sunmate.tw

相关型号：

20MQ100NPBF_10

Schottky Rectifier, 2.1 A

VISHAY

20MQ100NTRPBF

Schottky Rectifier, 2.1 A

VISHAY