11EQS06 概述
1A Plug-in Schottky diode 60V R-1 series
11EQS06 数据手册
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PDF下载11EQS03 - 11EQS10
SCHOTTKY BARRIER RECTIFIER DIODES
VOLTAGE RANGE: 30 - 100V
CURRENT: 1.0 A
R-1
Features
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
!
1.0 (25.4)
MIN.
!
!
!
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
0.102 (2.6)
0.091 (2.3)
DIA.
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
0.140(3.50)
0.114(2.90)
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Protection Applications
Mechanical Data
1.0 (25.4)
MIN.
Case: R-1 molded plastic body
Terminals: Plated axial leads, solderable
per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.007 ounce, 0.20 grams
!
!
0.025 (0.60)
0.021 (0.50)
DIA.
!
!
!
!
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol
11EQS03
11EQS04
11EQS06
11EQS10
100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
21
40
28
60
42
V
RMS Reverse Voltage
VR(RMS)
IO
70
V
A
Average Rectified Output Current @TL = 100°C
(Note 1)
1.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
40
A
Forward Voltage
@IF = 1.0A
VFM
IRM
Cj
0.50
0.70
0.85
V
mA
pF
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
10
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
110
80
RꢀJL
RꢀJA
15
50
°C/W
°C
Tj, TSTG
-65 to +150
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1 of 2
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RATINGS AND CHARACTERISTIC CURVES 11EQS03 THRU 11EQS10
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
40
32
24
16
1
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
11EQS03-11EQS04
11EQS06-11EQS10
8
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
1,000
100
10
20
10
TJ=100 C
TJ=75 C
1
0.1
TJ=25 C
PULSE WIDTH=300 ms
1%DUTY CYCLE
1
11EQS03-11DQS04
11EQS06
11EQS10
TJ=25 C
0.1
0.01
0.01
0.2
0.4
0.6
0.8
1.0 1.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5-TYPICAL JUNCTION CAPACITANCE
100
10
1
2000
1000
11EQS03-11EQS04
11EQS06-11EQS10
100
TJ=25 C
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
2 of 2
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11EQS06 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
11EQS06TA1B2 | NIEC | Rectifier Diode, Schottky, 1 Element, 0.8A, 60V V(RRM), Silicon, | 获取价格 | |
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11EQS10 | NIEC | SBD | 获取价格 | |
11EQS10 | SUNMATE | 1A Plug-in Schottky diode 100V R-1 series | 获取价格 | |
11EQS10 | KYOCERA AVX | Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between s | 获取价格 |
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