11EQS06

更新时间:2024-09-18 12:57:53
品牌:SUNMATE
描述:1A Plug-in Schottky diode 60V R-1 series

11EQS06 概述

1A Plug-in Schottky diode 60V R-1 series

11EQS06 数据手册

通过下载11EQS06数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
11EQS03 - 11EQS10  
SCHOTTKY BARRIER RECTIFIER DIODES  
VOLTAGE RANGE: 30 - 100V  
CURRENT: 1.0 A  
R-1  
Features  
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
!
!
1.0 (25.4)  
MIN.  
!
!
!
High Current Capability  
Low Power Loss, High Efficiency  
High Surge Current Capability  
0.102 (2.6)  
0.091 (2.3)  
DIA.  
!
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
0.140(3.50)  
0.114(2.90)  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Protection Applications  
Mechanical Data  
1.0 (25.4)  
MIN.  
Case: R-1 molded plastic body  
Terminals: Plated axial leads, solderable  
per MIL-STD-750,  
Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight:0.007 ounce, 0.20 grams  
!
!
0.025 (0.60)  
0.021 (0.50)  
DIA.  
!
!
!
!
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics TA = 25C unless otherwise specified  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Characteristic  
Symbol  
11EQS03  
11EQS04  
11EQS06  
11EQS10  
100  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
30  
21  
40  
28  
60  
42  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
70  
V
A
Average Rectified Output Current @TL = 100°C  
(Note 1)  
1.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
40  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
Cj  
0.50  
0.70  
0.85  
V
mA  
pF  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.5  
10  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 1)  
Operating and Storage Temperature Range  
110  
80  
RJL  
RJA  
15  
50  
°C/W  
°C  
Tj, TSTG  
-65 to +150  
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
1 of 2  
www.sunmate.tw  
RATINGS AND CHARACTERISTIC CURVES 11EQS03 THRU 11EQS10  
FIG. 1- FORWARD CURRENT DERATING CURVE  
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
40  
32  
24  
16  
1
0.8  
0.6  
0.4  
0.2  
0
Single Phase  
Half Wave 60Hz  
Resistive or  
inductive Load  
11EQS03-11EQS04  
11EQS06-11EQS10  
8
0
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
AMBIENT TEMPERATURE, C  
NUMBER OF CYCLES AT 60 Hz  
FIG. 4-TYPICAL REVERSE CHARACTERISTICS  
FIG. 3-TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
1,000  
100  
10  
20  
10  
TJ=100 C  
TJ=75 C  
1
0.1  
TJ=25 C  
PULSE WIDTH=300 ms  
1%DUTY CYCLE  
1
11EQS03-11DQS04  
11EQS06  
11EQS10  
TJ=25 C  
0.1  
0.01  
0.01  
0.2  
0.4  
0.6  
0.8  
1.0 1.1  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLEAGE,  
VOLTS  
PERCENT OF PEAK REVERSE VOLTAGE,%  
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE  
FIG. 5-TYPICAL JUNCTION CAPACITANCE  
100  
10  
1
2000  
1000  
11EQS03-11EQS04  
11EQS06-11EQS10  
100  
TJ=25 C  
0.1  
0.01  
0.1  
1
10  
100  
10  
0.1  
1.0  
10  
100  
REVERSE VOLTAGE,VOLTS  
t,PULSE DURATION,sec.  
2 of 2  
www.sunmate.tw  

11EQS06 相关器件

型号 制造商 描述 价格 文档
11EQS06TA1B2 NIEC Rectifier Diode, Schottky, 1 Element, 0.8A, 60V V(RRM), Silicon, 获取价格
11EQS06TA2B5 NIEC Rectifier Diode, Schottky, 1 Element, 0.8A, 60V V(RRM), Silicon 获取价格
11EQS06_15 NI SBD 获取价格
11EQS06_2015 NI SBD 获取价格
11EQS09 NIEC SBD 获取价格
11EQS09TA1B2 NIEC Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, 获取价格
11EQS09TA2B5 NIEC Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, 获取价格
11EQS10 NIEC SBD 获取价格
11EQS10 SUNMATE 1A Plug-in Schottky diode 100V R-1 series 获取价格
11EQS10 KYOCERA AVX Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between s 获取价格

11EQS06 相关文章

  • Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
    2024-09-20
    6
  • Bourns 精密环境传感器产品选型手册(英文版)
    2024-09-20
    9
  • Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
    2024-09-20
    8
  • Bourns GMOV 混合过压保护组件产品选型手册(英文版)
    2024-09-20
    6