Z0410XE [STMICROELECTRONICS]
STANDARD TRIACS; 标准双向可控硅
| 型号： | Z0410XE |
| 厂家： | 
ST |
| 描述： | STANDARD TRIACS |
| 文件： | 总6页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
www.DataSheet4U.com
Z0410xE/F
STANDARD TRIACS
FEATURES
IT(RMS) = 4A
VDRM = 400V to 800V
I
GT ≤ 25mA
A1
A2
A1
A2
G
G
DESCRIPTION
TO202-1
TO202-2
The Z0410xE/F series of triacs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
switching and phase control applications.
(Plastic)
(Plastic)
Z0410xE
Z0410xF
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Z0410xE/F Tc= 75 °C
Value
Unit
IT(RMS)
RMS on-state current
4
0.95
22
20
2
A
(360° conductionangle)
Z0410xF
Ta= 25 °C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Non repetitivesurge peak on-state current
ITSM
A
(Tj initial = 25°C )
I2t
I2t Value for fusing
A2s
dI/dt
Critical rate of rise of on-state current
Repetitive
F = 50 Hz
10
A/µs
IG = 50 mA
diG /dt = 0.1 A/µs.
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range
- 40, + 150
- 40, + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10s at
4.5mm from case
260
Voltage
Symbol
Parameter
Unit
D
M
S
N
Repetitive peak off-state voltage
Tj = 125°C
VDRM
VRRM
400
600
700
800
V
January 1995
1/6
Z0410xE/F
THERMAL RESISTANCES
Symbol
Parameter
Value
80
Unit
Rth(j-a)
Junction to ambient
Z0410xE
Z0410xF
°C/W
100
10
Junction to case for D.C
Junction to case for A.C 360°conduction angle (F=50Hz)
Rth(j-c)
Rth(j-c)
°C/W
°C/W
7.5
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.2 W PGM = 3 W (tp = 20 µs)
IGM = 1.2 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Sensitivity
Symbol
Test Conditions
Quadrant
Unit
10
25
1.5
0.2
2
IGT
VGT
VGD
tgt
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
Tj= 25°C
Tj= 25°C
I-II-III-IV MAX
I-II-III-IV MAX
mA
V
Tj= 125°C I-II-III-IV
MIN
TYP
V
VD=VDRM IG = 40mA
IT = 5.5A
dIG/dt = 0.5A/µs
Tj= 25°C
I-II-III-IV
µs
IH *
IL
IT= 50 mA Gate open
IG= 1.2 IGT
Tj= 25°C
Tj= 25°C
MAX
TYP
TYP
MAX
MAX
MAX
MIN
TYP
MIN
25
25
50
2
mA
mA
I-III-IV
II
VTM
*
ITM= 5.5A tp= 380µs
Tj= 25°C
Tj= 25°C
Tj= 110°C
Tj= 110°C
V
IDRM
IRRM
VD = VDRM
VR = VRRM
5
µA
200
200
400
5
dV/dt *
VD=67%VDRM
Gate open
V/µs
V/µs
(dI/dt)c = 1.8 A/ms
(dV/dt)c *
Tj= 110°C
* Foreither polarity of electrode A2 voltage with reference to electrode A1
ORDERING INFORMATION
Z 04 10 M E
PACKAGES :
E=TO202-1 F=TO202-2
TRIAC TOP GLASS
CURRENT
VOLTAGE
SENSITIVITY
2/6
Z0410xE/F
Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
Fig.2 : Correlation betweenmaximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (TO202-1).
Tcase (oC)
P (W)
P(W)
7
7
180 O
Rth = 0 o C/W
180o
-75
5o C/W
10o C/W
15o C/W
=
6
5
4
3
2
1
0
6
5
4
3
2
1
0
o
-85
=
120
-95
=
90o
=
60o
-105
-115
-125
=
30o
I
(A)
Tamb (oC)
T(RMS)
0
1
2
3
4
0
20
40
60
80
100
120
140
Fig.3 : Maximum RMS power dissipation versus
RMS on-state current.
Fig.4 : Correlation betweenmaximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) (TO202-2).
P(W)
Tcase (oC)
P (W)
7
180 O
7
=
180o
-75
6
5
4
3
2
1
0
6
Rth(j-c)
o
=
120
-85
5
4
3
2
1
0
=
90o
-95
=
60o
-105
-115
-125
=
30o
I
(A)
Rth(j-a)
60
T(RMS)
Tamb (oC)
20 40
0
1
2
3
4
0
80
100
120
140
Fig.5 : RMSon-state current versuscase tempera-
ture (TO202-1).
Fig.6 : RMS on-statecurrent versus case tempera-
ture (TO202-2).
I
(A)
I
(A)
T(RMS)
T(RMS)
5
4
3
2
1
0
1
0.8
0.6
0.4
0.2
0
= 180o
= 180o
Tcase(oC)
10 20 30 40 50 60 70 80 90 100 110 120130
Tamb(oC)
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
3/6
Z0410xE/F
Fig.6 : Relative variation of thermal impedance
versus pulse duration (TO202-1).
Fig.7 : Relative variation of thermal impedance
junction to ambient versus pulse duration
(TO202-2).
Zth/Rth
1.00
Zth(j-a)/Rth(j-a)
1.00
Zth(j-c)
Zth(j-a)
0.10
0.10
tp(s)
1E+2 5E+2
tp(s)
1E+2 5E+2
0.01
1E-3
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E-2
1E-1
1E+0
1E+1
Fig.9 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.10 : Non repetitivesurge peak on-state current
versus number of cycles.
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 oC]
20
15
10
5
2.6
2.4
2.2
2.0
Tj initial = 25oC
Igt
1.8
1.6
1.4
1.2
1.0
Ih
0.8
0.6
0.4
Number of cycles
10
Tj(oC)
0
-40 -20
0
20
40
60
80 100 120 140
1
100
1000
Fig.11 : Non repetitive surge peak on-state cur-
rent for a sinusoidal pulse with width : tp ≤ 10ms,
and correspondingvalue of I2t.
Fig.12 : On-state characteristics (maximum val-
ues).
2
2
I
(A). I t (A s)
I
(A)
TSM
TM
100
10
1
100
10
1
Tj initial = 25oC
Tj initial
25oC
I
TSM
Tj max
Tj max
Vto =0.98V
Rt =0.180
2
I t
V
(V)
tp (ms)
TM
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
1
10
4/6
Z0410xE/F
PACKAGE MECHANICAL DATA
TO202-1 (Plastic)
DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
REF.
A
B
C
D
F
G
H
I
10.1
0.398
A
H
G
13.7
7.3
0.540
0.287
0.413
J
I
10.5
B
1.5
3.16 3.20
5.3
0.059
0.124 0.126
0.209
3.2
0.126
0.020
C
0.51
M
O
P
F
D
J
1.5
4.5
0.059
0.177
N1
N
M
N
N1 2.54
0.100
O
P
1.4
0.7
0.055
0.028
Marking : type number
Weight : 1.4 g
5/6
Z0410xE/F
PACKAGE MECHANICAL DATA
TO202-2 (Plastic)
DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
REF.
A
B
C
D
E
F
10.1
0.398
A
H
1.2
7.3
0.047
0.287
0.413
0.290
E
J
B
10.5
7.4
C
1.5
5.3
0.059
0.209
M
O
P
H
J
0.51
1.5
0.020
0.059
0.177
F
D
M
N
4.5
N1
N
N1 2.54
0.100
O
P
1.4
0.7
0.055
0.028
Marking : type number
Weight : 1.0 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized foruse as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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