X0205MN-5BA4_技术文档

X02 Series

®

SENSITIVE

1.25A SCRs

MAIN FEATURES:

Symbol

A

Value

1.25

Unit

A

G

I

T(RMS)

K

V

/V

600 and 800

50 to 200

V

DRM RRM

I

µA

GT

DESCRIPTION

Thanks to highly sensitive triggering levels, the

X02 SCR series is suitable for all applications

where the available gate current is limited, such as

ground fault circuit interruptors, overvoltage

crowbar protection in low power supplies,

capacitive ignition circuits, ...

TO-92

(X02xxA)

SOT-223

(X02xxN)

Available in though-hole or surface-mount

packages, these devices are optimized in forward

voltage drop and inrush current capabilities, for

reduced power losses and high reliability in harsh

environments.

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

I

RMS on-state current

(180° conduction angle)

TO-92

SOT-223

TO-92

TI = 55°C

T(RMS)

1.25

0.8

A

Ttab = 95°C

TI = 55°C

IT

Average on-state current

(180° conduction angle)

(AV)

A

SOT-223

tp = 8.3 ms

tp = 10 ms

Ttab = 95°C

I

Non repetitive surge peak on-state

current

25

TSM

Tj = 25°C

22.5

²

2

tp = 10 ms

F = 60 Hz

tp = 20 µs

Tj = 25°C

2.5

50

A S

I t

I t Value for fusing

Critical rate of rise of on-state current

dI/dt

Tj = 125°C

A/µs

I

= 2 x I , tr ≤ 100 ns

G

GT

I

Peak gate current

Tj = 125°C

1.2

0.2

A

GM

P

Average gate power dissipation

W

G(AV)

T

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

Tj

September 2000 - Ed: 3

1/6

X02 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

X02xx

Symbol

Test Conditions

Unit

02

05

I

MIN.

MAX.

MIN.

-

20

GT

µA

200

50

V

= 12 V

R = 140 Ω

D

L

V

0.8

0.1

8

V

GT

V

Tj = 125°C

V

I

= V

R = 3.3 kΩ

R = 1 kΩ

GK

GD

D

DRM

L

V

MIN.

= 10 µA

RG

I = 50 mA

R

= 1 kΩ

MAX.

5

6

mA

V/µs

V

I

T

GK

H

I

= 1 mA

R

= 1 kΩ

G

GK

L

dV/dt

V

I

= 67 % V

R

= 1 kΩ

Tj = 110°C

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

MIN.

MAX.

10

15

D

DRM

GK

V

= 2.5 A tp = 380 µs

1.45

0.9

200

5

TM

V

Threshold voltage

V

to

R

Dynamic resistance

mΩ

d

I

DRM

RRM

V

= V

RRM

R

= 1 kΩ

GK

µA

DRM

500

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

°C/W

R

Junction to leads (DC)

Junction to tab (DC)

Junction to ambient (DC)

TO-92

60

25

th(j-l)

th(j-t)

th(j-a)

SOT-223

TO-92

R

150

60

²

SOT-223

S = 5 cm

S = Copper surface under tab

PRODUCT SELECTOR

Voltage

Part Number

Sensitivity

Package

600 V

800 V

X0202MA

X0202MN

X0202NA

X0202NN

X0205MA

X0205MN

X0205NA

X0205NN

X

200 µA

50 µA

TO-92

SOT-223

TO-92

X

SOT-223

TO-92

X

50 µA

SOT-223

TO-92

X

50 µA

SOT-223

2/6

X02 Series

ORDERING INFORMATION

Blank

X 02 02 M A

1BA2

SENSITIVE

SCR

SERIES

PACKING MODE:

1BA2:TO-92 Bulk

2BL2:TO-92 Ammopack

VOLTAGE:

M: 600V

N: 800V

PACKAGE:

A:TO-92

CURRENT: 1.25A

5BA4: SOT-223 Tape & Reel

SENSITIVITY:

N: SOT-223

02: 200µA

05: 50µA

OTHER INFORMATION

Part Number

Marking

Weight

Base Quantity

Packing mode

X02xxyA 1BA2

X02xxyA 2BL2

X0202yN 5BA4

X0205yN 5BA4

X02xxyA

0.2 g

2500

2000

1000

Bulk

Ammopack

Tape & reel

X2y

X5y

0.12 g

Note: xx = sensitivity, y = voltage

Fig. 1: Maximum average power dissipation

Fig. 2-1: Average and D.C. on-state current

versus average on-state current.

versus lead temperature (SOT-223/TO-92).

P(W)

IT(av)(A)

1.2

1.4

SOT-223

1.2

1.0

0.8

0.6

0.4

TO-92

1.0

SOT-223

0.8

0.6

TO-92

0.4

0.2

IT(av)(A)

0.2 0.3 0.4 0.5 0.6 0.7

Tlead or Tlab(°C)

0.0

0.0 0.1

0.0

0

25

50

75

100

125

0.8 0.9

3/6

X02 Series

Fig. 2-2: Average and D.C. on-state current

versus ambient temperature (device mounted on

FR4 with recommended pad layout) (SOT-223/

TO-92).

Fig. 3: Relative variation of thermal impedance

junction to ambient versus pulse duration

(SOT-223/TO-92).

K = [Zth(j-a)/Rth(j-a)]

IT(av)(A)

1.4

1.00

1.2

SOT-223

TO-92

1.0

SOT-223

0.8

SOT-223

0.10

TO-92

0.6

0.4

TO-92

0.2

Tamb(°C)

tp(s)

1E+0

0.0

0.01

1E-2

0

25

50

75

100

125

1E-1

1E+1

1E+2 5E+2

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical values).

Fig. 5: Relative variation of holding current

versus gate-cathode resistance (typical values).

IH[Rgk] / IH[Rgk = 1 kΩ]

IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]

4.0

Tj = 25°C

1.50

3.5

3.0

2.5

2.0

1.5

1.0

1.25

1.00

0.75

0.50

0.25

0.00

Ω

Tj(°C)

0.5

Rgk(kΩ)

0.0

-40 -20

0

20

40 60

80 100 120 140

1E-2

1E-1

1E+0

1E+1

Fig. 6: Relative variation of dV/dt immunity

Fig. 7: Relative variation of dV/dt immunity

versus gate-cathode resistance (typical values).

versus gate-cathode capacitance (typical values).

dV/dt[Cgk] / dV/dt[Rgk = 1kΩ]

dV/dt[Rgk]/dV/dt [

Rgk=1kΩ]

10.0

20

Tj = 125°C

VD = 0.67xVDRM

18

16

14

12

10

8

1.0

6

4

2

0

Cgk(nF)

Rgk(kΩ)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

0

2

4

6

8

10 12 14 16 18 20 22

4/6

X02 Series

Fig. 8: Surge peak on-state current versus

Fig. 9: Non-repetitive surge peak on-state

number of cycles.

current for

a

sinusoidal pulse with width

tp < 10 ms, and corresponding value of I²t.

ITSM(A), I²t(A²S)

ITSM(A)

25

300

100

20

tp=10ms

Onecycle

Nonrepetitive

Tjinitial=25°C

15

10

5

Number of cycles

10

Repetitive

Tamb=25°C

tp(ms)

0

1

0.01

1

10

100

1000

0.10

1.00

10.00

Fig. 10: On-state characteristics (maximum

values).

Fig. 11: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, copper thickness: 35 µm)

(SOT-223).

ITM(A)

Rth(j-a) (°C/W)

3E+1

130

120

110

100

90

80

70

60

1E+1

1E+0

50

40

30

20

VTM(V)

10

0

S(cm²)

1E-1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

0.5

1.0 1.5

2.0 2.5

3.0

3.5

4.0

4.5

PACKAGE MECHANICAL DATA

TO-92 (Plastic)

DIMENSIONS

REF.

Millimeters

Inches

A

Min.

Typ. Max. Min. Typ. Max.

a

A

B

C

D

E

F

a

1.35

2.54

0.053

0.100

B

C

4.70

0.185

4.40

0.173

0.500

12.70

F

D

E

3.70

0.50

0.146

0.019

5/6

X02 Series

PACKAGE MECHANICAL DATA

SOT-223 (Plastic)

DIMENSIONS

A

c

REF.

Millimeters

Inches

V

A1

Min. Typ. Max. Min. Typ. Max.

B

A

A1

B

1.80

0.071

0.004

e1

D

0.02

0.60

2.90

0.24

6.30

0.1 0.0008

0.70 0.85 0.024 0.027 0.034

3.00 3.15 0.114 0.118 0.124

0.26 0.35 0.009 0.010 0.014

6.50 6.70 0.248 0.256 0.264

B1

c

D

H

e

2.3

4.6

0.090

0.181

E

e1

E

3.30

6.70

3.50 3.70 0.130 0.138 0.146

7.00 7.30 0.264 0.276 0.287

10° max

H

e

V

FOOTPRINT DIMENSIONS (in millimeters)

SOT-223 (Plastic)

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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6/6


型号：	X0205MN-5BA4
厂家：	ST
描述：	1.25A SCRs 1.25A可控硅可控硅
文件：	总6页 (文件大小：150K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

X0205MN-5BA4 [STMICROELECTRONICS]

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