X0203BN [STMICROELECTRONICS]
1A, 200V, SCR;
ST 
X02xxxN
SENSITIVE GATE SCR
FEATURES
IT(RMS) = 1.4A
VDRM = 200V to 800V
Low IGT < 200 µA
A
K
A
G
DESCRIPTION
The X02xxxN series of SCRs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose high
SOT223
(Plastic)
volume
applications using surface mount
technology.
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
Parameter
Value
1.4
Unit
A
*
RMS on-state current
Ttab= 90°C
Ta=75°C
(180° conductionangle)
1.0
A
IT(AV)
*
Mean on-state current
(180° conductionangle)
Ttab= 90°C
Ta=75°C
0.9
A
0.64
25
A
ITSM
Non repetitive surge peak on-state current
(T initial = 25°C )
j
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
A
22.5
2.5
A
I2t
I2t Value for fusing
A2s
dI/dt
Critical rate of rise of on-state current
30
A/µs
IG = 10 mA
diG /dt = 0.1 A/µs.
Tstg
Tj
Storage and operating junction temperature range
- 40, + 150
- 40, + 125
°C
°C
Maximum lead temperature for soldering during 10s
Tl
260
2
* : With 5cm copper (e=35µm) surface under tab.
Voltage
Symbol
Parameter
Unit
B
D
M
N
Repetitive peak off-state voltage
Tj = 125°C RGK = 1KΩ
VDRM
VRRM
200
400
600
800
V
1/5
January 1995
X02xxxN
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
°C/W
°C/W
Rth(j-a)
Rth(j-t)
Junction to ambient *
Junction to tab for DC
25
2
* : With 5cm copper (e=35µm) surface under tab.
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.2 W PGM = 3 W (tp = 20 µs)
IGM = 1.2 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Sensitivity
Symbol
Test Conditions
Unit
02
03
20
05
20
50
IGT
VD=12V (DC) RL=140Ω
Tj= 25°C
MIN
µA
MAX
200
200
0.8
0.1
VGT
VGD
VD=12V (DC) RL=140Ω
Tj= 25°C MAX
Tj= 125°C MIN
V
V
VD=VDRM RL=3.3kΩ
RGK = 1 KΩ
VRGM
tgd
IRG =10µA
Tj= 25°C
MIN
8
V
VD=VDRM ITM= 3 x IT(AV
)
Tj= 25°C TYP
0.5
µs
dIG/dt = 0.1A/µs IG = 10mA
IT= 50mA RGK = 1 KΩ
IG=1mA RGK = 1 KΩ
IH
IL
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 110°C MAX
Tj= 110°C TYP
Tj= 110°C MAX
5
6
mA
mA
V
ITM= 2.8A tp= 380µs
VTM
1.5
5
IDRM
IRRM
VD = VDRM RGK = 1 KΩ
VR = VRRM
µA
µA
V/µs
µs
200
20
100
dV/dt
tq
VD=67%VDRM RGK = 1 KΩ
15
15
ITM= 3 x IT(AV) VR=35V
dI/dt=10A/µs tp=100µs
dV/dt=2V/µs
VD= 67%VDRM RGK = 1 KΩ
ORDERING INFORMATION
X 02 03 M N
PACKAGE :
N = SOT223
SCR TOP GLASS
CURRENT
VOLTAGE
SENSITIVITY
2/5
X02xxxN
Fig.1 : Maximum average power dissipation ver-
sus averageon-state current.
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Ttab).
Ttab (oC)
P (W)
P (W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-85
1.4
O
360
Rth(j-t)
1.2
DC
-95
1.0
= 180o
Rth(j-a)
0.8
=
120o
-105
-115
-125
= 90o
0.6
0.4
0.2
0.0
=
60o
=
30o
I
(A)
Tamb (oC)
40
T(AV)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
20
60
80
100 120 140
Fig.3 : Average on-state current versus tab tem-
perature.
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a)
1.00
I
(A)
T(AV)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
DC
0.10
= 180o
Standard foot print , e(Cu)=35
m
Ttab (oC)
tp(s)
0.01
1E-3
0
10 20 30 40 50 60 70 80 90 100 110 120 130
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 o C]
25
20
15
10
5
Tj initial = 25oC
10.0
9.0
8.0
7.0
6.0
5.0
4.0
Igt
3.0
2.0
Ih
1.0
0.0
Number of cycles
10
Tj(oC)
0
-40 -20
0
20
40
60
80 100 120 140
1
100
1000
3/5
X02xxxN
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp ≤ 10ms, and
correspondingvalue of I2t.
Fig.8 : On-statecharacteristics(maximum values).
2
2
I
(A). I t (A s)
I
(A)
TSM
TM
100
10
1
100
10
1
Tj initial = 25oC
Tj initial
25oC
I
TSM
Tj max
Tj max
Vto =1.05V
Rt =0.150
2
I
t
V
(V)
tp(ms)
TM
0.1
1
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
4/5
X02xxxN
PACKAGE MECHANICAL DATA
SOT223 (Plastic)
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
B
C
D
E
F
G
H
I
6.30
6.70
3.30
6.50
7.00
3.50
4.60
2.30
3.00
0.70
1.60
0.45
0.60
0.65
0.05
6.70 0.248 0.256 0.264
7.30 0.264 0.275 0.287
3.70 0.130 0.139 0.146
0.181
B
A
C
15°(4x)
H
0°/7°
J
I
L
M
E
K
D
0.090
F
2.90
0.60
1.50
0.43
0.50
0.63
3.10 0.114 0.118 0.122
0.80 0.023 0.027 0.031
1.70 0.059 0.063 0.067
0.47 0.017 0.018 0.019
0.70 0.019 0.023 0.027
0.67 0.024 0.025 0.026
0.002
J
K
L
G
M
0.32
0.012
MARKING
Type
Weight : 0.11 g
Marking
X2B
FOOT PRINT
X0202BN
X0202DN
X0202MN
X0202NN
X0203BN
X0203DN
X0203MN
X0203NN
X0205BN
X0205DN
X0205MN
X0205NN
X2D
X2M
X2N
X3B
3.3
1.5
X3D
X3M
X3N
X5B
6.4
1.2
(3x)
2.3
1.5
4.6
X5D
X5M
X5N
Recommended soldering pattern SOT223
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized foruse as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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5/5
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