W12NK90Z [STMICROELECTRONICS]
N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET; N沟道900V - 0.72欧姆 - 11A TO- 247齐纳保护超网功率MOSFET
| 型号： | W12NK90Z |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET |
| 文件： | 总14页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW12NK90Z
N-channel 900V - 0.72Ω - 11A - TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
pW
STW12NK90Z
900V
<0.88Ω
11A 230W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
TO-247
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STW12NK90Z
W12NK90Z
TO-247
Tube
October 2006
Rev 5
1/14
www.st.com
14
Contents
STW12NK90Z
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STW12NK90Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
900
30
V
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
11
A
ID
7
A
(1)
IDM
Ptot
44
A
Total dissipation at TC = 25°C
Derating Factor
230
1.85
6000
4.5
W
W/°C
V
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Single pulse avalanche energy
Storage temperature
(2)
EAS
mJ
Tstg
Tj
-55 to 150
°C
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤11A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Table 2.
Thermal data
Rthj-case Thermal resistance junction-case max
0.54
50
°C/W
°C/W
°C
Rthj-amb Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering purpose
300
Table 3.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAR
11
A
Single pulse avalanche energy
EAS
500
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Table 4.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min.
Typ.
Max. Unit
Gate-source breakdown
voltage
BVGSO
Igs= 1mA (open drain)
30
V
3/14
Electrical ratings
STW12NK90Z
1.1
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
4/14
STW12NK90Z
Electrical characteristics
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source
V(BR)DSS
ID = 1mA, VGS =0
900
V
breakdown voltage
V
DS = max rating
Zero gate voltage
1
µA
µA
IDSS
VDS = max rating,
TC = 125°C
drain current (VGS = 0)
50
Gate-body leakage
current (VDS = 0)
IGSS
VGS
VDS = VGS, ID = 100µA
GS = 10V, ID = 5.5A
=
20V
10
4.5
µA
V
VGS(th)
RDS(on)
Gate threshold voltage
3
3.75
0.72
Static drain-source on
resistance
V
0.88
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Forward
transconductance
(1)
gfs
VDS = 15V I = 5.5A
11
S
, D
Input capacitance
Output capacitance
Ciss
Coss
Crss
3500
280
58
pF
pF
pF
VDS = 25V, f = 1MHz,
VGS = 0
Reverse transfer
capacitance
VGS = 0V, VDS = 0V
to 800V
Equivalent output
capacitance
(2)
Coss eq
117
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
31
20
88
55
ns
ns
ns
ns
VDD = 450V, ID = 5A
RG = 4.7Ω VGS = 10V
(see Figure 13)
Turn-off delay time
Fall time
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 720V, ID = 10A,
VGS = 10V, RG = 4.7Ω
(see Figure 14)
113
19
152
nC
nC
nC
60
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
.
5/14
Electrical characteristics
STW12NK90Z
Max. Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Source-drain current
ISD
11
44
A
A
Source-drain current
(pulsed)
(1)
ISDM
(2)
VSD
trr
Forward on voltage
ISD = 11A, VGS = 0
1.6
V
Reverse recovery time
ISD = 10A, di/dt = 100A/µs,
728
7.8
ns
µC
A
Qrr
Reverse recovery charge VDD = 50V, Tj = 25°C
IRRM
Reverse recovery current (see Figure 15)
21.6
trr
Reverse recovery time
ISD = 10A, di/dt = 100A/µs,
964
11
ns
µC
A
Qrr
Reverse recovery charge VDD = 50V, Tj = 150°C
IRRM
Reverse recovery current (see Figure 15)
23
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
6/14
STW12NK90Z
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
7/14
Electrical characteristics
STW12NK90Z
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized breakdown voltage vs
temperature
8/14
STW12NK90Z
Test circuit
3
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
9/14
Test circuit
STW12NK90Z
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
10/14
STW12NK90Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/14
Package mechanical data
STW12NK90Z
TO-247 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
TYP
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
12/14
STW12NK90Z
Revision history
5
Revision history
Table 8.
Date
Revision history
Revision
Changes
21-Jun-2004
17-Oct-2006
4
5
Complete version
New template, no content change
13/14
STW12NK90Z
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