VNW35NV04 [STMICROELECTRONICS]
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET; “ OMNIFET II ” ：全AUTOPROTECTED功率MOSFET
| 型号： | VNW35NV04 |
| 厂家： | 
ST |
| 描述： | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| 文件： | 总19页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VNB35NV04 / VNP35NV04
/ VNV35NV04 / VNW35NV04
®
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
R
I
V
clamp
DS(on)
lim
VNB35NV04
VNP35NV04
VNV35NV04
VNW35NV04
10
10 mΩ (*)
30 A
40 V
3
1
1
2
PowerSO-10™
D PAK
(*) For PowerSO-10 only
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
3
3
2
1
2
1
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
TO-220
TO-247
ORDER CODES:
2
VNB35NV04
VNP35NV04
VNV35NV04
VNW35NV04
D PAK
TO-220
PowerSO-10™
TO-247
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
intended for replacement of standard Power
MOSFETS from DC up to 25KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments. Fault feedback can be detected by
monitoring the voltage at the input pin.
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB35NV04, VNP35NV04, VNV35NV04,
VNW35NV04 are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
BLOCK DIAGRAM
DRAIN
2
Overvoltage
Clamp
INPUT
Gate
Control
1
Linear
Current
Limiter
Over
Temperature
3
SOURCE
FC01000
July 2003
1/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
ABSOLUTE MAXIMUM RATING
Value
Unit
Symbol
Parameter
2
PowerSO-10™ D PAK
TO-220
TO-247
V
Drain-source Voltage (V =0V)
Internally Clamped
V
V
DS
IN
V
Input Voltage
Internally Clamped
IN
I
Input Current
+/-20
mA
Ω
IN
R
Minimum Input Series Impedance
Drain Current
4.7
Internally Limited
-30
IN MIN
I
I
A
D
R
Reverse DC Output Current
Electrostatic Discharge (R=1.5KΩ, C=100pF)
A
V
4000
V
ESD1
Electrostatic Discharge on output pin only
(R=330Ω, C=150pF)
V
16500
V
ESD2
P
Total Dissipation at T =25°C
125
125
125
208
W
°C
°C
°C
tot
c
T
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
Internally limited
Internally limited
-55 to 150
j
T
c
T
stg
CONNECTION DIAGRAM (TOP VIEW)
5
4
3
SOURCE
SOURCE
N.C.
6
7
INPUT
INPUT
INPUT
INPUT
INPUT
8
9
SOURCE
SOURCE
2
1
10
11
DRAIN
2
(*) For the pins configuration related to TO-220, TO-247, D PAK, see outlines at page 1.
CURRENT AND VOLTAGE CONVENTIONS
ID
VDS
DRAIN
RIN
IIN
INPUT
SOURCE
VIN
2/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
THERMAL DATA
Symbol
Value
PowerSO-10™ D2PAK
Parameter
Unit
TO-220 TO-247
R
Thermal Resistance Junction-case}}} MAX
1
1
1
0.6
°C/W
°C/W
thj-case
R
ThermalResistanceJunction-ambient MAX
50(*)
50(*)
50
30
thj-amb
2
(*) When mounted on a standard single-sided FR4 board with 50mm of Cu (at least 35 µm thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF
Symbol
Parameter
Drain-source Clamp
Voltage
Test Conditions
=0V; I =15A
Min
Typ
Max
Unit
V
V
40
45
55
V
CLAMP
IN
D
Drain-source Clamp
Threshold Voltage
V
V
V
V
=0V; I =2mA
36
V
V
CLTH
IN
D
V
Input Threshold Voltage
=V ; I =1mA
0.5
2.5
INTH
DS
DS
IN
D
Supply Current from Input
Pin
I
=0V; V =5V
100
6.8
150
µA
ISS
IN
Input-Source Clamp
Voltage
I
I
=1mA
6
8
IN
IN
V
V
INCL
=-1mA
-1.0
-0.3
30
V
V
=13V; V =0V; T =25°C
Zero Input Voltage Drain
DS
DS
IN
j
I
µA
DSS
Current (V =0V)
=25V; V =0V
75
IN
IN
ON
Max
2
D PAK
Symbol
Parameter
Test Conditions
=5V; I =15A; T =25°C
Unit
PowerSO-10
TO-220 / TO-247
V
V
10
20
13
24
Static Drain-source On
Resistance
IN
D
j
R
mΩ
DS(on)
=5V; I =15A; T =150°C
IN
D
j
3/19
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
=13V; I =15A
Min
Typ
35
Max
Unit
S
g
(*)
V
V
fs
DD
D
Transconductance
Output Capacitance
C
=13V; f=1MHz; V =0V
1300
pF
OSS
DS
IN
SWITCHING
Symbol
Parameter
Test Conditions
Min
Typ
150
840
980
600
4
Max
500
Unit
ns
t
t
t
t
Turn-on Delay Time
Rise Time
d(on)
V
V
=15V; I =15A
D
DD
t
2500
3000
1500
12
ns
r
=5V; R =R =4.7Ω
IN MIN
gen
gen
Turn-off Delay Time
Fall Time
ns
d(off)
(see figure 1)
t
ns
f
Turn-on Delay Time
Rise Time
µs
µs
µs
µs
d(on)
V
V
=15V; I =15A
D
DD
t
27
100
r
=5V; R =2.2KΩ
gen
gen
Turn-off Delay Time
Fall Time
34
120
d(off)
(see figure 1)
t
31
110
f
V
V
V
=15V; I =15A
D
DD
(di/dt)
Turn-on Current Slope
Total Input Charge
18
A/µs
on
=5V; R =R =4.7Ω
IN MIN
gen
gen
=12V; I =15A; V =5V
DD
D
IN
Q
118
nC
i
I
=2.13mA (see figure 5)
gen
SOURCE DRAIN DIODE
Symbol
(*)
Parameter
Test Conditions
Min
Typ
0.8
400
1.4
7
Max
Unit
V
V
Forward On Voltage
I
=15A; V =0V
SD
SD
SD
IN
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
=15A; dI/dt=100A/µs
=30V; L=200µH
ns
µC
A
rr
Q
V
rr
DD
I
(see test circuit, figure 2)
RRM
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
V =6V; V =13V
Min
Typ
Max
Unit
I
Drain Current Limit
30
45
60
A
lim
IN
DS
V =6V; V =13V
Step Response Current
Limit
IN
DS
t
50
µs
dlim
Overtemperature
Shutdown
T
150
175
200
°C
jsh
T
Overtemperature Reset
Fault Sink Current
135
10
°C
jrs
I
V
=5V; V =13V; T =T
jsh
15
20
mA
gf
IN
DS
j
starting T =25°C; V =24V
j
DD
Single Pulse
E
V
=5V; R =R
=4.7Ω; L=24mH
1.7
J
as
IN
gen
IN MIN
Avalanche Energy
(see figures 3 & 4)
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
4/19
2
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
PROTECTION FEATURES
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
these are based on sensing the chip temperature
and are not dependent on the input voltage. The
location of the sensing element on the chip in the
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 °C, a typical
value being 170 °C. The device is automatically
restarted when the chip temperature falls of about
15°C below shut-down temperature.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC up
to 25KHz. The only difference from the user’s
standpoint is that a small DC current IISS (typ.
100µA) flows into the INPUT pin in order to supply
the internal circuitry.
The device integrates:
- STATUS FEEDBACK:
- OVERVOLTAGE CLAMP PROTECTION:
in the case of an overtemperature fault condition
(Tj > Tjsh), the device tries to sink a diagnostic
current Igf through the INPUT pin in order to
indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive impedance is high enough
so that the INPUT pin driver is not able to supply
the current Igf, the INPUT pin will fall to 0V. This
will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
internally set at 45V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current ID to Ilim whatever the
INPUT pin voltages is. When the current limiter is
active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
supply the normal operation drive current IISS
.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
junction
temperature
may
reach
the
overtemperature threshold Tjsh
.
5/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Fig.1: Switching Time Test Circuit for Resistive Load
V
D
R
gen
V
gen
ID
90%
10%
tf
tr
t
td(on)
td(off)
Vgen
t
Fig.2: Test Circuit for Diode Recovery Times
A
A
B
D
I
FAST
DIODE
L=100uH
OMNIFET
S
B
25 Ω
D
S
V
DD
R
gen
I
OMNIFET
V
gen
8.5 Ω
6/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Fig. 3: Unclamped Inductive Load Test Circuits
Fig. 4: Unclamped Inductive Waveforms
R
GEN
V
IN
P
W
Fig. 5: Input Charge Test Circuit
Fig 6 : Thermal Impedance for TO-220
GEN
IN
V
ND8003
Fig. 7:Thermal Impedance for TO-247
7/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Source-Drain Diode Forward Characteristics
Static Drain Source On Resistance
Vsd (mV)
950
Rds(on) (mOhm)
50
Vin=2.5V
900
Tj=-40ºC
Vin=0V
40
30
20
10
850
Tj=25ºC
Tj=150ºC
800
750
700
650
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
Id (A)
Id (A)
D2PAK, TO-220 & TO-247 Static Drain-Source On
resistance Vs. Input Voltage
PowerSO-10 Static Drain-Source On resistance Vs.
Input Voltage
Rds(on) (mOhm)
30
Rds(on) (mOhm)
27.5
25
Id=15A
25
Id=7.5A
22.5
Tj=150ºC
Id=15A
Id=7.5A
20
15
10
5
20
Id=15A
Tj=150°C
Id=7.5A
17.5
Tj=25ºC
Tj=-40ºC
15
Id=15A
Id=7.5A
Id=15A
Id=7.5A
12.5
Id=15A
Id=7.5A
Tj=25°C
10
7.5
Tj=-40°C
0
5
2.5
3
3.5
4
4.5
Vin (V)
5
5.5
6
6.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
Vin (V)
PowerSO-10 Static Drain-Source On Resistance
Vs. Id
D2PAK, TO-220 & TO-247 Static Drain-Source On
Resistance Vs. Id
Rds(on) (mOhm)
24
Rds(on) (mOhm)
30
21
25
Tj=150ºC
18
Vin=5V
20
15
12
Tj=150ºC
15
Tj=25ºC
9
10
Tj=25ºC
Tj=-40ºC
6
Tj=-40ºC
Vin=5V
5
3
0
0
0
4
8
12
16
20
24
28
32
0
5
10
15
20
25
30
35
Id (A)
Id (A)
8/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Transconductance
Transfer Characteristics
Gfs (S)
54
Idon (A)
50
Tj=-40ºC
45
40
35
30
25
20
15
10
5
48
Vds=13.5V
Vds=13V
Tj=25ºC
42
Tj=-40ºC
Tj=150ºC
36
30
24
18
12
6
Tj=150ºC
Tj=25ºC
0
0
0
4
8
12
16
20
24
28
32
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
Id (A)
Vin (V)
Output Characteristics
Normalized On Resistance Vs. Temperature
Rds(on) (mOhm)
Id (A)
55
4
50
3.5
Vin=4V
Vin=5V
45
Id=15A
Vin=4.5V
Vin=3.5V
3
40
35
30
25
20
15
10
5
Vin=3V
2.5
2
1.5
1
Vin=2.5V
0.5
0
0
-50
-25
0
25
50
75
100
125
150
175
0
0.25 0.5 0.75
1
1.25 1.5 1.75
Vds (V)
2
2.25 2.5
Tc (ºC)
Turn On Current Slope
Turn On Current Slope
di/dt (A/us)
10
di/dt (A/us)
20
9
17.5
Vin=3.5V
Vdd=15V
8
Vin=5V
15
12.5
10
Vdd=15V
Id=15A
Id=15A
7
6
5
4
3
2
1
0
7.5
5
2.5
0
0
125
250
375
500
625
750
875 1000 1125
0
150
300
450
600
750
900
1050
Rg (Ohm)
Rg (Ohm)
9/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Turn off drain source voltage slope
Input Voltage Vs. Input Charge
dV/dt (V/us)
160
Vin (V)
8
140
120
100
80
7
Vds=12V
Id=15A
Vin=5V
Vdd=15V
Id=15A
6
5
4
3
2
1
0
60
40
20
0
0
150
300
450
600
750
900
1050
0
25
50
75
100
125
150
175
Rg (Ohm)
Qg (nC)
Switching Time Resistive Load
Turn Off Drain-Source Voltage Slope
T (us)
40
dV/dt (V/us)
160
td(off)
tf
tr
35
140
Vdd=15V
Id=15A
Rg=4.7ohm
Vin=3.5V
Vdd=15V
Id=15A
30
25
20
15
10
5
120
100
80
60
40
20
0
td(on)
0
0
300
600
900
1200 1500 1800 2100 2400
Rg (Ohm)
0
150
300
450
600
750
900
1050
Rg (Ohm)
Normalized Input Threshold Voltage Vs.
Temperature
Switching Time Resistive Load
Vinth (V)
T (ns)
1750
2
Vdd=15V
tr
1.75
1500
Id=15A
Vds=Vin
Id=1mA
Rg=4.7ohm
1.5
td(off)
1250
1.25
1
1000
750
0.75
0.5
0.25
0
tf
500
250
0
td(on)
-50
-25
0
25
50
75
100 125 150
175
3
3.5
4
4.5
5
5.5
6
6.5
7
Tc (ºC)
Vin (V)
10/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Current Limit Vs. Junction Temperature
Step Response Current Limit
Tdlim (us)
180
Ilim (A)
100
90
160
Vin=6V
Vds=13V
80
70
60
50
40
30
20
10
0
Vin=6V
140
120
100
80
60
40
0
5
10
15
20
25
30
35
-50
-25
0
25
50
75
100 125
150
175
Vdd (V)
Tc (ºC)
Derating Curve
11/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.4
TYP
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.7
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.260
3.5
3.93
0.154
0.102
2.6
DIA.
3.75
3.85
0.147
0.151
12/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
TO-247 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.7
2.2
0.4
1
MAX.
5.3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
A
D
2.6
E
0.8
F
1.4
F3
F4
G
2
2.4
3
3.4
10.9
0.429
H
15.3
19.7
14.2
15.9
20.3
14.8
0.602
0.776
0.559
0.626
0.779
0.582
L
L3
L4
L5
M
34.6
5.5
1.362
0.217
2
3
0.079
0.140
0.118
0.144
Dia.
3.55
3.65
13/19
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
PowerSO-10™ MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
MAX.
MIN.
MAX.
A
A (*)
A1
B
B (*)
C
C (*)
D
D1
E
E2
E2 (*)
E4
E4 (*)
e
F
F (*)
H
3.35
3.4
3.65
3.6
0.132
0.134
0.000
0.016
0.014
0.013
0.009
0.370
0.291
0.366
0.283
0.287
0.232
0.232
0.144
0.142
0.004
0.024
0.021
0.022
0.0126
0.378
0.300
0.374
300
0.00
0.40
0.37
0.35
0.23
9.40
7.40
9.30
7.20
7.30
5.90
5.90
0.10
0.60
0.53
0.55
0.32
9.60
7.60
9.50
7.60
7.50
6.10
6.30
0.295
0.240
0.248
1.27
0.50
0.050
0.002
1.25
1.20
13.80
13.85
1.35
1.40
14.40
14.35
0.049
0.047
0.543
0.545
0.053
0.055
0.567
0.565
H (*)
h
L
L (*)
α
1.20
0.80
0º
1.80
1.10
8º
0.047
0.031
0º
0.070
0.043
8º
α (*)
2º
8º
2º
8º
(*) Muar only POA P013P
B
0.10
E
A B
10
H
E
E2
E4
1
SEATING
PLANE
DETAIL "A"
e
B
A
C
0.25
D
=
=
=
=
h
D1
SEATING
PLANE
A
F
A1
L
A1
DETAIL "A"
α
P095A
14/19
1
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
2
D PAK MECHANICAL DATA
mm.
DIM.
MIN.
4.4
TYP
MAX.
4.6
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
10
10.4
E1
G
8.5
4.88
15
5.28
15.85
1.4
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
V2
0º
8º
P011P6
15/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
TO-220 TUBE SHIPMENT (no suffix)
A
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
50
1000
532
5.5
B
B
31.4
0.75
C (± 0.1)
All dimensions are in mm.
C
16/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
PowerSO-10™ SUGGESTED PAD LAYOUT
TUBE SHIPMENT (no suffix)
14.6 - 14.9
CASABLANCA
MUAR
B
10.8- 11
6.30
C
A
C
A
0.67 - 0.73
0.54 - 0.6
B
1
2
3
10
9
All dimensions are in mm.
Base Q.ty Bulk Q.ty Tube length (± 0.5)
8
9.5
7
4
5
1.27
A
B
C (± 0.1)
0.8
6
Casablanca
Muar
50
50
1000
1000
532
532
10.4 16.4
4.9 17.2
0.8
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
600
600
330
1.5
13
20.2
24.4
60
G (+ 2 / -0)
N (min)
T (max)
30.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
P0 (± 0.1)
P
24
4
Tape Hole Spacing
Component Spacing
Hole Diameter
24
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
11.5
6.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
All dimensions are in mm.
End
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
17/19
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)
A
16.90
C
Base Q.ty
50
500
532
6
Bulk Q.ty
Tube length (± 0.5)
12.20
5.08
A
1.60
B
B
21.3
0.6
3.50
C (± 0.1)
9.75
All dimensions
are in millimeters
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
1000
1000
330
1.5
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
13
20.2
24.4
60
G (+ 2 / -0)
N (min)
T (max)
30.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
P0 (± 0.1)
P
24
4
Tape Hole Spacing
Component Spacing
Hole Diameter
16
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
11.5
6.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
All dimensions are in mm.
End
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
18/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2003 STMicroelectronics - Printed in ITALY- All Rights Reserved.
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19/19
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