VNP49N04FI [STMICROELECTRONICS]
“OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET; ？ OMNIFET ?:岗AUTOPROTECTED功率MOSFET
| 型号： | VNP49N04FI |
| 厂家： | 
ST |
| 描述： | “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| 文件： | 总14页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VNP49N04FI
/ VNB49N04 / VNV49N04
“OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
V
R
I
LIM
CLAMP
DS(ON)
VNP49N04FI
VNB49N04
VNV49N04
42 V
20 mΩ
49 A
ISOWATT220
n LINEAR CURRENT LIMITATION
n THERMAL SHUT DOWN
3
2
1
n SHORT CIRCUIT PROTECTION
n INTEGRATED CLAMP
10
3
1
n LOW CURRENT DRAWN FROM INPUT PIN
n DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
1
PowerSO-10TM
TO-263 (D2PAK)
ORDER CODES:
n ESD PROTECTION
n DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
ISOWATT220
PowerSO-10TM
VNP49N04FI
VNV49N04
VNB49N04
TO-263 (D2PAK)
n COMPATIBLE WITH STANDARD POWER
MOSFET
MOSFETS from DC up to 50KHz applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
DESCRIPTION
The VNP49N04FI, VNB49N04, VNV49N04 are
monolithic
devices
designed
in
STMicroelectronics VIPower M0 Technology,
intended for replacement of standard Power
BLOCK DIAGRAM
DRAIN
Overvoltage
Clamp
Gate
Control
INPUT
Linear
Current
Limiter
Over
Temperature
Status
SOURCE
October 1999
1/14
1
VNP49N04FI / VNB49N04 / VNV49N04
ABSOLUTE MAXIMUM RATING
Value
Symbol
Parameter
Unit
PowerSO-10TM
D2PAK
ISOWATT220
V
Drain-source Voltage (V =0V)
Internally Clamped
18
V
V
DS
IN
V
Input Voltage
IN
I
Drain Current
Internally Limited
-50
A
D
I
Reverse DC Output Current
Electrostatic Discharge (R=1.5KΩ, C=100pF)
A
R
V
2000
V
ESD
P
Total Dissipation at T =25°C
125
125
40
W
°C
°C
°C
tot
c
T
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
Internally limited
Internally limited
-55 to 150
j
T
c
T
stg
CONNECTION DIAGRAM (TOP VIEW)
SOURCE
SOURCE
N.C.
SOURCE
SOURCE
INPUT
INPUT
INPUT
INPUT
INPUT
5
4
3
6
7
SOURCE
DRAIN
3
2
1
8
9
2
1
10
INPUT
11
DRAIN
PowerSO-10TM
D2PAK
SOURCE
3
2
1
DRAIN
INPUT
ISOWATT220
2/14
1
VNP49N04FI / VNB49N04 / VNV49N04
THERMAL DATA
Symbol
Value
Parameter
Unit
PowerSO-10
D2PAK
1
ISOWATT220
3.12
R
Thermal Resistance Junction-case}}}
MAX
1
°C/W
°C/W
thj-case
R
Thermal Resistance Junction-ambient MAX
50
62.5
62.5
thj-amb
ELECTRICAL CHARACTERISTICS (-40°C < T < 125°C, unless otherwise specified)
j
OFF
Symbol
Parameter
Drain-source Clamp
Voltage
Test Conditions
I =200 mA; V =0
Min
Typ
Max
Unit
V
34
42
50
V
CLAMP
D
IN
Drain-source Clamp
Threshold Voltage
V
I =2mA; V =0
33
V
V
CLTH
D
IN
Input-Source Reverse
Clamp Voltage
V
I
= -1mA
-1.2
-0.1
INCL
DSS
IN
V
V
=13V; V =0V
70
µA
µA
Zero Input Voltage Drain
DS
IN
I
Current (V =0V)
=25V; V =0V
220
IN
DS
IN
Supply Current from Input
Pin
I
V
=0V; V =10V
250
550
µA
ISS
DS
IN
ON (*)
Symbol
Parameter
Test Conditions
=V I + I =1mA
Min
Typ
Max
3
Unit
V
V
Input Threshold Voltage
V
V
V
0.8
IN(th)
DS
IN; D
IN
=10V; I =25A
0.04
0.05
Ω
Static Drain-source On
Resistance
IN
D
R
DS(on)
=5V; I =25A
Ω
IN
D
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
=13V; I =25A; T =25°C
Min
Typ
30
Max
Unit
S
g
(*)
V
25
fs
DS
DS
D
c
Transconductance
Output Capacitance
C
V
=13V; f=1MHz; V =0V; T =25°C
1100
1500
pF
OSS
IN
c
SWITCHING (**)
Symbol
Parameter
Test Conditions
Min
Typ
200
1300
800
300
1.3
Max
600
3600
2400
900
3.8
Unit
ns
t
Turn-on Delay Time
Rise Time
d(on)
V
V
=15V; I =25A
D
DS
t
ns
r
=10V; R =10 Ω
gen
gen
t
Turn-off Delay Time
Fall Time
ns
d(off)
(see figure 3)
t
ns
f
t
Turn-on Delay Time
Rise Time
µs
µs
µs
µs
d(on)
V
V
=15V; I =25A
D
DS
t
3.8
10.4
24
r
=10V; R =1000Ω
gen
gen
t
Turn-off Delay Time
Fall Time
12
d(off)
(see figure 3)
t
6.1
17
f
V
V
V
=15V; I =25A
D
DS
(di/dt)
Turn-on Current Slope
Total Input Charge
25
A/µs
on
=10V; R =10 Ω
IN
gen
Q
=15V; I =25A; V =10V
100
nC
i
DS
D
IN
3/14
1
VNP49N04FI / VNB49N04 / VNV49N04
SOURCE DRAIN DIODE
Symbol
(*)
Parameter
Test Conditions
Min
Typ
Max
Unit
V
V
Forward On Voltage
I
I
=25A; V =0V
1.8
SD
SD
IN
t (**)
Reverse Recovery Time
Reverse Recovery Charge
=25A; di/dt=100A/µs
250
910
7.5
ns
nC
A
rr
SD
Q
(**)
V
=30V; T =25°C
rr
DS
j
I
(**) Reverse Recovery Current
(see test circuit, figure 5)
RRM
PROTECTIONS
Symbol
Parameter
Test Conditions
Min
28
Typ
49
Max
70
Unit
A
V
V
V
V
=10V; V =13V
DS
IN
IN
IN
IN
I
Drain Current Limit
LIM
=5V; V =13V
28
49
70
A
DS
=10V
=5V
35
50
µs
µs
Step Response Current
Limit
t
(**)
dlim
90
150
Overtemperature
T
(**)
(**)
(**)
150
135
°C
jsh
Shutdown
T
Overtemperature Reset
°C
mA
mA
jrs
V
V
=10V; V =13V
50
20
IN
DS
I
Fault Sink Current
gf
=5V; V =13V
IN
DS
Single Pulse
Starting T =25°C; V =20V
j DS
E
(**)
4
J
as
Avalanche Energy
V =10V; R =1KΩ; L=6mH
IN gen
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(**) Parameters guaranteed by design/characterization
4/14
2
VNP49N04FI / VNB49N04 / VNV49N04
PROTECTION FEATURES
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC up to 50KHz. The only difference
from the user’s standpoint is that a small DC
junction
temperature
may
jsh
reach
the
overtemperature threshold T
.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:
these are based on sensing the chip temperature
and are not dependent on the input voltage. The
location of the sensing element on the chip in the
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs at minimum 150°C. The device is
automatically restarted when the chip temperature
falls below 135°C.
current (I ) flows into the INPUT pin in order to
ISS
supply the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 42V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- STATUS FEEDBACK:
in the case of an overtemperature fault condition, a
status feedback is provided through the INPUT
pin. The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100Ω. The
failure can be detected by monitoring the voltage
at the INPUT pin, which will be close to ground
potential. Additional features of this device are
ESD protection according to the Human Body
model and the ability to be driven from a TTL Logic
circuit (with a small increase in RDS(ON)).
- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current I to I
whatever the
D
LIM
INPUT pin voltage. When the current limiter is
active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
5/14
1
VNP49N04FI / VNB49N04 / VNV49N04
Thermal Impedance for ISOWATT220
Thermal Impedance for D2PAK / PowerSO-10
Derating Curve
Output Characteristics
Transconductance
Static Drain-Source On Resistance vs Input
Voltage
6/14
1
VNP49N04FI / VNB49N04 / VNV49N04
Static Drain-Source On Resistance
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs Normalized On Resistance vs Temperature
Temperature
7/14
1
VNP49N04FI / VNB49N04 / VNV49N04
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
8/14
1
VNP49N04FI / VNB49N04 / VNV49N04
Switching Time Resistive Load
Switching Time Resistive Load
Current Limit vs Junction Temperature
Step Response Current Limit
Source Drain Diode Forward Characteristics
9/14
1
VNP49N04FI / VNB49N04 / VNV49N04
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Time Test Circuits for Resistive Fig. 4: Input Charge Test Circuit
Load
Fig. 5: Test Circuit for Inductive Load Switching Fig. 6: Waveforms
and Diode Recovery Times
10/14
1
VNP49N04FI / VNB49N04 / VNV49N04
ISOWATT220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.015
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.4
F
0.75
1.15
1.15
4.95
2.4
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
11/14
1
VNP49N04FI / VNB49N04 / VNV49N04
TO-263 (D2PAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.30
2.49
0.70
1.25
0.45
1.21
8.95
10
MAX.
4.60
2.69
0.93
1.4
MIN.
0.169
0.098
0.027
0.049
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
MAX.
0.181
0.106
0.036
0.055
0.023
0.053
0.368
0.404
0.208
0.625
0.055
0.068
A
A1
B
B2
C
0.6
C2
D
1.36
9.35
10.28
5.28
15.85
1.4
E
G
4.88
15
L
L2
L3
1.27
1.4
1.75
D
A
C
C2
DETAIL”A”
DETAIL”A”
A1
B
B2
E
G
L3
L2
L
12/14
VNP49N04FI / VNB49N04 / VNV49N04
PowerSO-10 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
3.35
0.00
0.40
0.35
9.40
7.40
9.30
7.20
7.20
6.10
5.90
MAX.
3.65
0.10
0.60
0.55
9.60
7.60
9.50
7.40
7.60
6.35
6.10
MIN.
0.132
0.000
0.016
0.013
0.370
0.291
0.366
0.283
0.283
0.240
0.232
MAX.
0.144
0.004
0.024
0.022
0.378
0.300
0.374
0.291
300
A
A1
B
c
D
D1
E
E1
E2
E3
E4
e
0.250
0.240
1.27
0.050
F
1.25
1.35
0.049
0.543
0.053
0.567
H
13.80
14.40
h
0.50
1.70
0.002
0.067
Q
α
0º
8º
B
0.10
A
B
10
6
H
E
E3 E1
E2
E4
1
5
SEATING
PLANE
DETAIL ”A”
e
B
A
C
M
0.25
Q
D
=
=
=
=
h
D1
SEATING
PLANE
A
F
A1
L
A1
DETAIL”A”
α
13/14
1
VNP49N04FI / VNB49N04 / VNV49N04
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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14/14
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