TS922AIYPT [STMICROELECTRONICS]

Rail-to-rail high output current dual operational amplifier; 轨至轨高输出电流双运算放大器
TS922AIYPT
型号: TS922AIYPT
厂家: ST    ST
描述:

Rail-to-rail high output current dual operational amplifier
轨至轨高输出电流双运算放大器

运算放大器 放大器电路 光电二极管 信息通信管理
文件: 总21页 (文件大小:481K)
中文:  中文翻译
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TS922  
Rail-to-rail high output current dual operational amplifier  
Features  
Rail-to-rail input and output  
Low noise: 9nV/Hz  
Low distortion  
J
(Flip-chip)  
High output current: 80mA  
(able to drive 32Ω loads)  
High-speed: 4MHz, 1V/μs  
Operating from 2.7V to 12V  
N
DIP8  
(Plastic package)  
Low input offset voltage: 900μV max (TS922A)  
ESD Internal protection: 2kV  
Latch-up immunity  
Macromodel included in this specification  
Dual version available in flip-chip package  
D
SO-8  
Description  
(Plastic micropackage)  
The TS922 is a rail-to-rail dual BiCMOS  
operational amplifier optimized and fully specified  
for 3V and 5V operation.  
The device’s high output current allows low-load  
impedances to be driven.  
P
TSSOP8  
(Thin shrink small outline package)  
Very low noise, low distortion, low offset and a  
high output current capability make this device an  
excellent choice for high quality, low voltage or  
battery operated audio systems.  
The device is stable for capacitive loads up to  
500pF.  
Applications  
Headphone amplifier  
Sound cards, multimedia systems  
Line driver, actuator driver  
Servo amplifier  
Mobile phone and portable equipment  
Instrumentation with low noise as key factor  
Piezoelectric speaker driver  
January 2007  
Rev 6  
1/21  
www.st.com  
21  
Contents  
TS922  
Contents  
1
2
3
4
Pin diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Macromodel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
4.1  
4.2  
4.3  
Important note concerning this macromodel . . . . . . . . . . . . . . . . . . . . . . 11  
Electrical characteristics from macromodelization . . . . . . . . . . . . . . . . . . 11  
Macromodel code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
5.1  
5.2  
5.3  
5.4  
Flip-chip package (8 bumps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
DIP8 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
SO-8 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
TSSOP8 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
6
7
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
2/21  
TS922  
Pin diagrams  
1
Pin diagrams  
Figure 1.  
Pin connections (top view)  
+
Output 1  
Inverting Input 1  
V
1
2
3
4
8
7
6
5
CC  
Output 2  
-
+
Non-inverting Input 1  
-
Inverting Input 2  
Non-inverting Input 2  
+
V
CC  
Figure 2.  
Pin-out for flip-chip package (top view)  
OUT2  
VCC+  
OUT1  
-IN2  
+IN2  
-
+
GND  
+
-
-IN1  
+IN1  
3/21  
Absolute maximum ratings and operating conditions  
TS922  
2
Absolute maximum ratings and operating conditions  
Table 1.  
Symbol  
Absolute maximum ratings (AMR)  
Parameter  
Value  
Unit  
VCC  
Vid  
Supply voltage (1)  
14  
±1  
V
V
Differential input voltage (2)  
Input voltage (3)  
Vin  
VDD-0.3 to VCC+0.3  
-65 to +150  
V
Tstg  
Storage temperature  
°C  
Thermal resistance junction to ambient (4)  
125  
120  
85  
SO8  
TSSOP8  
DIP8  
Rthja  
°C/W  
°C/W  
Flip-chip  
90  
Thermal resistance junction to case  
40  
37  
41  
SO8  
TSSOP8  
DIP8  
Rthjc  
Tj  
Maximum junction temperature  
150  
°C  
kV  
V
HBM: human body model(5)  
MM: machine model(6)  
2
ESD  
100  
1.5  
CDM: charged device model  
kV  
Output short circuit duration  
Latch-up immunity  
see note(7)  
200  
mA  
°C  
Soldering temperature (10sec), leaded version  
Soldering temperature (10sec), unleaded version  
250  
260  
1. All voltage values, except differential voltage are with respect to network ground terminal.  
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. If  
V
id > ±1V, the maximum input current must not exceed ±1mA. In this case (Vid > ±1V) an input series  
resistor must be added to limit input current.  
3. Do not exceed 14V.  
4. Rth are typical values.  
5. Human body model, 100pF discharged through a 1.5kΩ resistor into pin of device.  
6. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC  
with no external series resistor (internal resistor < 5Ω), into pin of device.  
7. There is no short-circuit protection inside the device: short-circuits from the output to VCC can cause  
excessive heating. The maximum output current is approximately 80mA, independent of the magnitude of  
V
CC. Destructive dissipation can result from simultaneous short-circuits on all amplifiers.  
Table 2.  
Symbol  
Operating conditions  
Parameter  
Value  
Unit  
VCC  
Vicm  
Supply voltage  
Common mode input voltage range  
2.7 to 12  
VDD -0.2 to VCC +0.2  
-40 to +125  
V
V
Toper Operating free air temperature range  
°C  
4/21  
TS922  
Electrical characteristics  
3
Electrical characteristics  
Table 3.  
Symbol  
Electrical characteristics measured at V = +3V, V = 0V, V  
= V /2,  
icm CC  
CC  
DD  
T
= 25°C, and R connected to V /2 (unless otherwise specified)  
amb  
L CC  
Parameter  
Test conditions  
Min.  
Typ. Max.  
Unit  
TS922, T=25°C  
3
TS922A, T=25°C  
TS922IJ (flip-chip), T=25°C  
0.9  
1.5  
Vio  
Input offset voltage  
mV  
Tmin Tamb Tmax TS922  
5
Tmin Tamb Tmax TS922A  
Tmin Tamb Tmax TS922IJ (flip-chip)  
1.8  
2.5  
DVio  
Iio  
Input offset voltage drift  
2
μV/°C  
Input offset current  
Vout = VCC/2  
1
30  
30  
T=25°C  
Tmin Tamb Tmax  
nA  
Input bias current  
Vout = VCC/2  
T=25°C  
15  
100  
100  
Iib  
nA  
V
Tmin Tamb Tmax  
RL= 10k, T=25°C  
Tmin Tamb Tmax  
2.90  
2.90  
VOH  
High level output voltage  
RL = 600Ω, T=25°C  
Tmin Tamb Tmax  
2.87  
2.87  
V
V
RL = 32Ω, T=25°C  
2.63  
RL= 10k, T=25°C  
Tmin Tamb Tmax  
50  
50  
mV  
VOL  
Low level output voltage  
Large signal voltage gain  
RL = 600Ω, T=25°C  
Tmin Tamb Tmax  
100  
100  
mV  
mV  
RL = 32Ω, T=25°C  
180  
200  
RL= 10k, T=25°C  
RL= 10k, Tmin Tamb Tmax  
70  
15  
Avd  
RL = 600Ω, T=25°C  
RL = 600Ω, Tmin Tamb Tmax  
35  
V/mV  
(Vout = 2Vp-p  
)
RL = 32Ω, T=25°C  
16  
2
Total supply current  
T=25°C  
3
ICC  
mA  
MHz  
dB  
No load, Vout = VCC/2,  
Tmin Tamb Tmax  
3.2  
GBP Gain bandwidth product  
RL = 600Ω  
4
T=25°C  
60  
56  
80  
CMR Common mode rejection ratio  
Tmin Tamb Tmax  
T=25°C  
60  
60  
85  
Supply voltage rejection ratio  
VCC = 2.7 to 3.3V  
SVR  
dB  
Tmin Tamb Tmax  
Io  
Output short circuit current  
Slew rate  
50  
80  
1.3  
68  
mA  
V/μs  
SR  
φm  
0.7  
Phase margin at unit gain  
RL = 600Ω, CL =100pF  
Degrees  
5/21  
Electrical characteristics  
TS922  
Table 3.  
Electrical characteristics measured at V = +3V, V = 0V, V  
= V /2,  
icm CC  
CC  
DD  
T
= 25°C, and R connected to V /2 (unless otherwise specified) (continued)  
amb  
L CC  
Symbol  
Parameter  
Gain margin  
Test conditions  
Min.  
Typ. Max.  
Unit  
Gm  
RL = 600Ω, CL =100pF  
12  
dB  
nV  
-----------  
en  
Equivalent input noise voltage f = 1kHz  
9
Hz  
THD Total harmonic distortion  
Cs Channel separation  
Vout= 2Vp-p, F= 1kHz, Av= 1, RL=600Ω  
0.005  
120  
%
dB  
6/21  
TS922  
Electrical characteristics  
Table 4.  
Symbol  
Electrical characteristics measured at V = 5V, V = 0V, V  
= Vcc/2,  
CC  
DD  
icm  
T
= 25°C, and R connected to V /2 (unless otherwise specified)  
amb  
L cc  
Parameter  
Conditions  
Min.  
Typ. Max.  
Unit  
TS922, T=25°C  
3
TS922A, T=25°C  
TS922IJ (flip-chip), T=25°C  
0.9  
1.5  
Vio  
Input offset voltage  
mV  
Tmin Tamb Tmax TS922  
5
Tmin Tamb Tmax TS922A  
Tmin Tamb Tmax TS922IJ (flip-chip)  
1.8  
2.5  
DVio  
Iio  
Input offset voltage drift  
2
μV/°C  
Input offset current  
Vout = VCC/2  
T=25°C  
1
30  
30  
nA  
Tmin Tamb Tmax  
Input bias current  
Vout = VCC/2  
T=25°C  
15  
100  
100  
Iib  
nA  
Tmin Tamb Tmax  
RL= 10k, T=25°C  
Tmin Tamb Tmax  
4.9  
4.9  
VOH  
High level output voltage  
RL = 600Ω, T=25°C  
Tmin Tamb Tmax  
4.85  
4.85  
V
RL = 32Ω, T=25°C  
4.4  
RL= 10k, T=25°C  
Tmin Tamb Tmax  
50  
50  
VOL  
Low level output voltage  
Large signal voltage gain  
RL = 600Ω, T=25°C  
Tmin Tamb Tmax  
120  
120  
mV  
RL = 32Ω, T=25°C  
300  
200  
RL= 10k, T=25°C  
V/mV  
RL= 10k, Tmin Tamb Tmax  
70  
20  
Avd  
RL = 600Ω, T=25°C  
RL = 600Ω, Tmin Tamb Tmax  
35  
(Vout = 2Vp-p  
)
RL = 32Ω, T=25°C  
16  
2
Total supply current  
T=25°C  
3
Icc  
mA  
MHz  
dB  
No load, Vout = VCC/2,  
Tmin Tamb Tmax  
3.2  
GBP Gain bandwidth product  
RL = 600Ω  
4
T=25°C  
60  
56  
80  
Common mode rejection  
CMR  
ratio  
Tmin Tamb Tmax  
T=25°C  
60  
60  
85  
Supply voltage rejection ratio  
VCC = 4.5 to 5.5V  
SVR  
dB  
Tmin Tamb Tmax  
Io  
Output short circuit current  
Slew rate  
50  
80  
1.3  
68  
12  
mA  
V/μs  
SR  
φm  
Gm  
0.7  
Phase margin at unit gain  
Gain margin  
RL = 600Ω, CL =100pF  
RL = 600Ω, CL =100pF  
Degrees  
dB  
Equivalent input noise  
voltage  
nV  
en  
f = 1kHz  
9
-----------  
Hz  
7/21  
Electrical characteristics  
TS922  
Table 4.  
Symbol  
Electrical characteristics measured at V = 5V, V = 0V, V  
= Vcc/2,  
CC  
DD  
icm  
T
= 25°C, and R connected to V /2 (unless otherwise specified) (continued)  
amb  
L cc  
Parameter  
Conditions  
Min.  
Typ. Max.  
Unit  
THD Total harmonic distortion  
Cs Channel separation  
Vout= 2Vp-p, F= 1kHz, Av= 1, RL=600Ω  
0.005  
120  
%
dB  
8/21  
TS922  
Electrical characteristics  
Figure 3.  
Output short circuit current vs.  
output voltage  
Figure 4.  
Total supply current vs. supply  
voltage  
100  
80  
60  
Sink  
40  
20  
Vcc=0/3V  
0
-20  
-40  
-60  
-80  
Source  
-100  
0
0,5  
1
1,5  
2
2,5  
3
Output Voltage (V)  
Figure 5.  
Voltage gain and phase vs.  
frequency  
Figure 6.  
Equivalent input noise voltage vs.  
frequency  
60  
180  
120  
60  
30  
25  
20  
15  
10  
5
phase  
40  
20  
0
V
=±1.5V  
Rl=10k  
Cl=100pF  
CC  
L
R =100Ω  
gain  
0
0
0.01  
0.1  
1
10  
100  
-20  
-60  
Frequency (kHz)  
1E+02  
1E+03  
1E+04  
1E+05  
1E+06  
1E+07  
1E+08  
Frequency (Hz)  
Figure 7.  
THD + noise vs. frequency  
Figure 8.  
THD + noise vs. frequency  
0.04  
0.032  
0.024  
0.016  
0.008  
0.02  
0.015  
0.01  
R =32Ω Vo=4Vpp  
CC  
L
R =2k Vo=10Vpp  
L
CC  
V
=±2.5V Av= 1  
V
=±6V Av= 1  
0.005  
0
0
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
Frequency (kHz)  
Frequency (kHz)  
9/21  
Electrical characteristics  
TS922  
Figure 9.  
THD + noise vs. frequency  
Figure 10. THD + noise vs. output voltage  
10,000  
1,000  
0,100  
0,010  
0,001  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
R =32Ω Vo=2Vpp  
CC  
L
R =600Ω f=1kHz  
CC  
V
=±1.5V Av= 10  
L
V
=0/3V Av= -1  
0
0.01  
0.1  
1
10  
100  
0
0,2  
0,4  
0,6  
0,8  
1
1,2  
Frequency (kHz)  
Vout (Vrms)  
Figure 11. THD + noise vs. output voltage  
Figure 12. THD + noise vs. output voltage  
10  
10  
1
1
R =32Ω f=1kHz  
CC  
L
V
=±1.5V Av= -1  
0.1  
R =2kΩ f=1kHz  
CC  
L
V
=±1.5V Av= -1  
0.1  
0.01  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1
0.001  
Vout (Vrms)  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
Vout (Vrms)  
Figure 13. Open loop gain and phase vs.  
frequency  
50  
40  
30  
180  
120  
60  
0
C =500pF  
L
20  
10  
0
1E+2  
1E+3  
1E+4  
1E+5  
Frequency (Hz)  
1E+6  
1E+7  
1E+8  
10/21  
TS922  
Macromodel  
4
Macromodel  
4.1  
Important note concerning this macromodel  
Please consider the following remarks before using this macromodel.  
All models are a trade-off between accuracy and complexity (i.e. simulation time).  
Macromodels are not a substitute to breadboarding; rather, they confirm the validity of  
a design approach and help to select surrounding component values.  
A macromodel emulates the nominal performance of a typical device within specified  
operating conditions (temperature, supply voltage, for example). Thus the  
macromodel is often not as exhaustive as the datasheet, its purpose is to illustrate the  
main parameters of the product.  
Data derived from macromodels used outside of the specified conditions (V , temperature,  
CC  
for example) or even worse, outside of the device operating conditions (V , V , for  
CC icm  
example), is not reliable in any way.  
Section 4.2 presents the electrical characteristics resulting from the use of these  
macromodels.  
4.2  
Electrical characteristics from macromodelization  
Table 5.  
Electrical characteristics resulting from macromodel simulation at V  
=
CC  
3V, V = 0V, R , C connected to V /2, T = 25°C (unless otherwise  
DD  
L
L
CC  
amb  
specified)  
Symbol  
Conditions  
Value  
Unit  
Vio  
Avd  
0
200  
1.2  
mV  
V/mV  
mA  
V
RL = 10kΩ  
ICC  
No load, per operator  
Vicm  
VOH  
VOL  
Isink  
Isource  
GBP  
SR  
-0.2 to 3.2  
2.95  
25  
RL = 10kΩ  
V
RL = 10kΩ  
mV  
mA  
mA  
MHz  
V/μs  
VO = 3V  
80  
VO = 0V  
80  
RL = 600kΩ  
RL = 10kΩ, CL = 100pF  
RL = 600kΩ  
4
1.3  
φm  
68  
Degrees  
11/21  
Macromodel  
TS922  
4.3  
Macromodel code  
** Standard Linear Ics Macromodels, 1996.  
** CONNECTIONS:  
* 1 INVERTING INPUT  
* 2 NON-INVERTING INPUT  
* 3 OUTPUT  
* 4 POSITIVE POWER SUPPLY  
* 5 NEGATIVE POWER SUPPLY  
*
.SUBCKT TS92X 1 2 3 4 5  
*
.MODEL MDTH D IS=1E-8 KF=2.664234E-16 CJO=10F  
*
* INPUT STAGE  
CIP 2 5 1.000000E-12  
CIN 1 5 1.000000E-12  
EIP 10 5 2 5 1  
EIN 16 5 1 5 1  
RIP 10 11 8.125000E+00  
RIN 15 16 8.125000E+00  
RIS 11 15 2.238465E+02  
DIP 11 12 MDTH 400E-12  
DIN 15 14 MDTH 400E-12  
VOFP 12 13 DC 153.5u  
VOFN 13 14 DC 0  
IPOL 13 5 3.200000E-05  
CPS 11 15 1e-9  
DINN 17 13 MDTH 400E-12  
VIN 17 5 -0.100000e+00  
DINR 15 18 MDTH 400E-12  
VIP 4 18 0.400000E+00  
FCP 4 5 VOFP 1.865000E+02  
FCN 5 4 VOFN 1.865000E+02  
FIBP 2 5 VOFP 6.250000E-03  
FIBN 5 1 VOFN 6.250000E-03  
* GM1 STAGE ***************  
FGM1P 119 5 VOFP 1.1  
FGM1N 119 5 VOFN 1.1  
RAP 119 4 2.6E+06  
RAN 119 5 2.6E+06  
* GM2 STAGE ***************  
G2P 19 5 119 5 1.92E-02  
G2N 19 5 119 4 1.92E-02  
R2P 19 4 1E+07  
R2N 19 5 1E+07  
**************************  
VINT1 500 0 5  
GCONVP 500 501 119 4 19.38  
VP 501 0 0  
GCONVN 500 502 119 5 19.38  
VN 502 0 0  
12/21  
TS922  
Macromodel  
********* orientation isink isource *******  
VINT2 503 0 5  
FCOPY 503 504 VOUT 1  
DCOPYP 504 505 MDTH 400E-9  
VCOPYP 505 0 0  
DCOPYN 506 504 MDTH 400E-9  
VCOPYN 0 506 0  
***************************  
F2PP 19 5 poly(2) VCOPYP VP 0 0 0 0 0.5  
F2PN 19 5 poly(2) VCOPYP VN 0 0 0 0 0.5  
F2NP 19 5 poly(2) VCOPYN VP 0 0 0 0 1.75  
F2NN 19 5 poly(2) VCOPYN VN 0 0 0 0 1.75  
* COMPENSATION ************  
CC 19 119 25p  
* OUTPUT ***********  
DOPM 19 22 MDTH 400E-12  
DONM 21 19 MDTH 400E-12  
HOPM 22 28 VOUT 6.250000E+02  
VIPM 28 4 5.000000E+01  
HONM 21 27 VOUT 6.250000E+02  
VINM 5 27 5.000000E+01  
VOUT 3 23 0  
ROUT 23 19 6  
COUT 3 5 1.300000E-10  
DOP 19 25 MDTH 400E-12  
VOP 4 25 1.052  
DON 24 19 MDTH 400E-12  
VON 24 5 1.052  
.ENDS;TS92X  
13/21  
Package mechanical data  
TS922  
5
Package mechanical data  
In order to meet environmental requirements, STMicroelectronics offers these devices in  
®
ECOPACK packages. These packages have a Lead-free second level interconnect. The  
category of second level interconnect is marked on the package and on the inner box label,  
in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an STMicroelectronics  
trademark. ECOPACK specifications are available at: www.st.com.  
5.1  
Flip-chip package (8 bumps)  
Figure 14. Top view and dimensions of 8-bump flip-chip  
1600 µm  
Die size: 1600µm x 1600µm ±30µm  
Die height: 350µm ±20µm  
1600 µm  
Die height (including bumps):  
500µm  
600µm  
Bumps diameter: 315µm ±50µm  
Bumps height: 250µm ±40µm  
Pitch: 500µm ±10µm  
500µm  
315µm  
600 µm  
Figure 15. Flip-chip footprint recommendation  
TS922IJ Footprint  
75µm min.  
100μm max.  
500μm  
500μm  
Φ=250μm  
Φ=400μm  
Track  
150μm min.  
Solder mask opening  
Pad in Cu 18μm with Flash NiAu (6μm, 0.15μm)  
14/21  
TS922  
Package mechanical data  
Figure 16. Flip-chip marking (top view)  
BUMP 1A CORNER  
n
n
n
n
Logo: ST  
Part Number: 922  
Date Code: YWW  
The dot is for marking the bump  
1A corner  
LEADFREE  
E
922  
YWW  
1
1
A
A
User direction of feed  
Note:  
Device orientation: the devices are oriented in the carrier pocket with bump number A1  
adjacent to the sprocket holes.  
15/21  
Package mechanical data  
TS922  
5.2  
DIP8 package  
Dimensions  
Ref.  
Millimeters  
Inches  
Min.  
Typ.  
Max.  
Min.  
Typ.  
Max.  
A
a1  
B
3.3  
0.130  
0.7  
0.028  
0.055  
0.036  
1.39  
0.91  
1.65  
1.04  
0.065  
0.041  
B1  
b
0.5  
0.020  
b1  
D
E
0.38  
0.5  
9.8  
0.015  
0.020  
0.386  
8.8  
0.346  
0.100  
0.300  
0.300  
e
2.54  
7.62  
7.62  
e3  
e4  
F
7.1  
4.8  
0.280  
0.189  
I
L
3.3  
0.130  
Z
0.44  
1.6  
0.017  
0.063  
16/21  
TS922  
Package mechanical data  
5.3  
SO-8 package  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Min.  
Max.  
Min.  
Typ.  
Max.  
A
A1  
A2  
B
1.35  
0.10  
1.10  
0.33  
0.19  
4.80  
3.80  
1.75  
0.25  
1.65  
0.51  
0.25  
5.00  
4.00  
0.053  
0.04  
0.069  
0.010  
0.065  
0.020  
0.010  
0.197  
0.157  
0.043  
0.013  
0.007  
0.189  
0.150  
C
D
E
e
1.27  
0.050  
H
5.80  
0.25  
0.40  
6.20  
0.50  
1.27  
0.228  
0.010  
0.016  
0.244  
0.020  
0.050  
h
L
k
8° (max.)  
ddd  
0.1  
0.04  
17/21  
Package mechanical data  
TS922  
5.4  
TSSOP8 package  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
1.2  
0.047  
0.006  
0.041  
0.012  
0.008  
0.122  
0.260  
0.177  
0.05  
0.80  
0.19  
0.09  
2.90  
6.20  
4.30  
0.15  
1.05  
0.30  
0.20  
3.10  
6.60  
4.50  
0.002  
0.031  
0.007  
0.004  
0.114  
0.244  
0.169  
1.00  
0.039  
c
D
3.00  
6.40  
4.40  
0.65  
0.118  
0.252  
0.173  
0.0256  
E
E1  
e
K
0°  
8°  
0°  
8°  
L
0.45  
0.60  
1
0.75  
0.018  
0.024  
0.039  
0.030  
L1  
18/21  
TS922  
Ordering information  
6
Ordering information  
Table 6.  
Order codes  
Temperature  
Part number  
Package  
DIP8  
Packaging  
Marking  
range  
TS922IN  
TS922IN  
TS922AIN  
922I  
Tube  
TS922AIN  
TS922ID/IDT  
TS922AID/AIDT  
TS922IPT  
Tube or tape &  
reel  
SO-8  
922AI  
922I  
TSSOP8  
(Thin shrink outline package)  
Tape & reel  
Tape & reel  
TS922AIPT  
-40°C, +125°C  
922AI  
922  
TS922IJT/EIJT  
TS922IYD/IYDT  
TS922AIYD/AIYDT  
TS922IYPT  
Flip-chip  
922IY  
922AIY  
922IY  
922AY  
SO-8  
Tube or tape &  
reel  
(automotive grade level)  
TSSOP8  
(automotive grade level)  
Tape & reel  
TS922AIYPT  
19/21  
Revision history  
TS922  
7
Revision history  
Table 7.  
Date  
Document revision history  
Revision  
Changes  
1-Feb-2001  
1-Jul-2004  
1
2
First release.  
Flip-chip package inserted in the document.  
Modifications in AMR Table 1 on page 4 (explanation of Vid and Vi  
limits, ESD MM and CDM values added, Rthja added).  
2-May-2005  
1-Aug-2005  
1-Mar-2006  
3
4
5
PPAP references inserted in the datasheet, see Table 6 on page 19.  
TS922EIJT part number inserted in the datasheet, see  
Table 6 on page 19.  
Modifications in AMR Table 1 on page 4 (Rthjc added), parameter  
limits on full temperature range added in Table 3 on page 5 and  
Table 4 on page 7.  
26-Jan-2007  
6
20/21  
TS922  
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21/21  

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