TS420-700T-TR [STMICROELECTRONICS]

4A SCRs; 4A可控硅
TS420-700T-TR
型号: TS420-700T-TR
厂家: ST    ST
描述:

4A SCRs
4A可控硅

可控硅
文件: 总8页 (文件大小:141K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TS420 Series  
®
SENSITIVE  
4A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
Unit  
A
G
I
4
T(RMS)  
K
A
V
/V  
600 and 700  
200  
V
DRM RRM  
A
I
µA  
GT  
K
A
G
DPAK  
(TS420-B)  
K
A
G
DESCRIPTION  
IPAK  
(TS420-H)  
Thanks to highly sensitive triggering levels, the  
TS420 series is suitable for all applications where  
the available gate current is limited, such as motor  
control for hand tools, kitchen aids, overvoltage  
crowbar protection for low power supplies, ...  
Available in through-hole or surface-mount  
packages, they provide an optimized performance  
in a limited space area.  
A
K
A
G
TO-220AB  
(TS420-T)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tl = 115°C  
4
A
A
IT  
I
Average on-state current (180° conduction angle)  
(AV)  
Tl = 115°C  
Tj = 25°C  
2.5  
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
33  
30  
TSM  
A
2
²
²
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
4.5  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
1.2  
0.2  
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
Tj  
September 2000 - Ed: 3  
1/8  
TS420 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
TS420  
Unit  
I
GT  
MAX.  
200  
µA  
V
V
= 12 V  
R = 33 Ω  
D
L
V
MAX.  
MIN.  
MIN.  
0.8  
0.1  
8
GT  
V
Tj = 125°C  
V
I
= V  
R = 3.3 kΩ  
R = 220 Ω  
GK  
V
GD  
D
DRM  
L
V
= 10 µA  
V
RG  
RG  
I
I = 50 mA  
R
R
= 1 kΩ  
= 1 kΩ  
MAX.  
MAX.  
MIN.  
5
mA  
mA  
V/µs  
V
H
T
GK  
I
I
= 1 mA  
6
L
G
GK  
V
I
= 67 % V  
R
= 220 Ω  
dV/dt  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
5
D
DRM  
GK  
V
= 8 A tp = 380 µs  
MAX.  
MAX.  
MAX.  
MAX.  
1.6  
0.85  
90  
5
TM  
TM  
V
Threshold voltage  
V
t0  
R
Dynamic resistance  
mΩ  
µA  
mA  
d
I
I
DRM  
RRM  
V
= V  
RRM  
R
= 220 Ω  
GK  
DRM  
1
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
R
Junction to case (DC)  
°C/W  
°C/W  
3.0  
th(j-c)  
²
Junction to ambient (DC)  
DPAK  
70  
S = 0.5 cm  
th(j-a)  
IPAK  
100  
60  
TO-220AB  
S = copper surface under tab  
PRODUCT SELECTOR  
Voltage (xxx)  
Part Number  
Sensitivity  
Package  
600 V  
700 V  
TS420-xxxB  
TS420-xxxH  
TS420-xxxT  
X
X
X
X
X
X
200 µA  
200 µA  
200 µA  
DPAK  
IPAK  
TO-220AB  
ORDERING INFORMATION  
SCR  
SERIES  
PACKING MODE  
Blank:Tube  
-TR: DPAK tape & reel  
PACKAGE:  
B: DPAK  
H: IPAK  
T:TO-220AB  
CURRENT: 4A  
SENSITIVITY:  
20: 200µA  
VOLTAGE:  
600: 600V  
700: 700V  
2/8  
TS420 Series  
OTHER INFORMATION  
Part Number  
Marking  
Weight  
Base Quantity  
Packing mode  
TS420-x00B  
TS420-x00B-TR  
TS420-x00H  
TS420-x00T  
TS420x00  
TS420x00  
0.3 g  
0.3 g  
0.4 g  
2.3 g  
75  
2500  
75  
Tube  
Tape & reel  
Tube  
TS420x00  
TS420x00T  
50  
Tube  
Note: x = voltage  
Fig. 1: Maximum average power dissipation  
Fig. 2-1: Average and D.C. on-state current  
versus average on-state current.  
versus case temperature.  
P(W)  
IT(av)(A)  
4.0  
5.0  
4.5  
α = 180°  
3.5  
DC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
3.0  
α = 180°  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
360°  
1.0  
0.5  
IT(av)(A)  
α
Tcase(°C)  
0.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
25  
50  
75  
100  
125  
Fig. 2-2: Average and D.C. on-state current  
versus ambient temperature (device mounted on  
FR4 with recommended pad layout) (DPAK).  
Fig. 3: Relative variation of thermal impedance  
junction to ambient versus pulse duration  
(recommended pad layout, FR4 PC board) for  
DPAK.  
IT(av)(A)  
2.0  
1.8  
DC  
DPAK  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
(S = 0.5cm2  
)
α = 180°  
IPAK  
DC  
α = 180°  
Tamb(°C)  
50 75  
0
25  
100  
125  
3/8  
TS420 Series  
Fig. 4: Relative variation of gate trigger current  
Fig. 5: Relative variation of holding current  
and holding current versus junction temperature.  
versus gate-cathode resistance (typical values).  
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C]  
IH[Rgk] / IH[Rgk = 1k]  
2.0  
1.8  
IGT  
1.6  
1.4  
1.2  
IH & IL  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Rgk = 1kΩ  
Tj(°C)  
40 60  
Rgk(kΩ)  
-40 -20  
0
20  
80 100 120 140  
Fig. 6: Relative variation of dV/dt immunity  
Fig. 7: Relative variation of dV/dt immunity  
versus gate-cathode resistance (typical values).  
versus gate-cathode resistance (typical values).  
dV/dt[Cgk] / dV/dt [Rgk = 220 ]  
dV/dt[Rgk] / dV/dt [Rgk = 220]  
10  
10.00  
VD = 0.67 x VDRM  
Tj = 125°C  
Rgk = 220  
Tj=125°C  
VD=0.67xVDRM  
8
6
4
2
1.00  
0.10  
Cgk(nF)  
Rgk()  
0
0.01  
0
2
4
6
8
10 12 14 16 18 20 22  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
Fig. 8: Surge peak on-state current versus  
number of cycles.  
Fig. 9: Non-repetitive surge peak on-state  
current for sinusoidal pulse with width  
tp < 10 ms, and corresponding values of I²t.  
a
ITSM(A)  
2
2
ITSM(A),I t(A s)  
35  
300  
100  
Tj initial = 25°C  
30  
ITSM  
dI/dt  
limitattion  
tp = 10ms  
Non repetitive  
Tj initial = 25°C  
25  
One cycle  
20  
15  
10  
5
10  
1
I2t  
Repetitive  
Tcase = 115 °C  
tp(ms)  
Number of cycles  
0
0.01  
0.10  
1.00  
10.00  
1
10  
100  
1000  
4/8  
TS420 Series  
Fig. 10: On-state characteristics (maximum  
values).  
Fig. 11: Thermal resistance junction to ambient  
versus copper surface under tab (Epoxy printed  
circuit board FR4, copper thickness: 35 µm)  
(DPAK).  
ITM(A)  
Rth(j-a) (°C/W)  
50.0  
100  
Tj max.:  
Vto = 0.85V  
Rd = 90mΩ  
80  
60  
40  
20  
10.0  
Tj = Tj max.  
1.0  
Tj = 25°C  
2
S(cm )  
VTM(V)  
0
0.1  
0
2
4
6
8
10 12 14 16 18 20  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
5/8  
TS420 Series  
PACKAGE MECHANICAL DATA  
DPAK (Plastic)  
DIMENSIONS  
Millimeters  
REF.  
Inches  
Min.  
Max  
Min.  
Max.  
A
A1  
A2  
B
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.018  
0.236  
0.251  
0.173  
0.368  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.259  
0.181  
0.397  
B2  
C
R
C2  
D
R
E
G
H
L2  
L4  
R
0.80 typ.  
0.031 typ.  
0.60  
1.00  
0.023  
0.039  
0.2 typ.  
0.007 typ.  
0°  
V2  
0°  
8°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
DPAK (Plastic)  
6.7  
6.7  
3
3
1.6  
1.6  
2.3 2.3  
6/8  
TS420 Series  
PACKAGE MECHANICAL DATA  
IPAK (Plastic)  
DIMENSIONS  
Millimeters  
REF.  
Inches  
Min. Typ. Max. Min. Typ. Max.  
A
A1  
A3  
B
2.2  
0.9  
2.4  
1.1  
1.3  
0.9  
5.4  
0.85  
0.086  
0.035  
0.027  
0.025  
0.204  
0.094  
0.043  
0.051  
0.035  
0.212  
0.033  
A
E
C2  
0.7  
B2  
0.64  
5.2  
L2  
B2  
B3  
B5  
B6  
C
0.3  
0.035  
D
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
H
B3  
C2  
D
L1  
B6  
L
A1  
B
V1  
E
6.4  
4.4  
15.9  
9
G
H
16.3 0.626  
B5  
C
L
9.4  
1.2  
1
0.354  
0.031  
G
A3  
L1  
L2  
V1  
0.8  
0.8  
0.031 0.039  
10°  
10°  
7/8  
TS420 Series  
PACKAGE MECHANICAL DATA  
TO-220AB (Plastic)  
DIMENSIONS  
Millimeters  
REF.  
Inches  
Max.  
Min.  
Max.  
Min.  
A
H2  
A
C
4.40  
1.23  
2.40  
0.49  
0.61  
1.14  
1.14  
4.95  
2.40  
10  
4.60  
1.32  
2.72  
0.70  
0.88  
1.70  
1.70  
5.15  
2.70  
10.40  
0.173  
0.048  
0.094  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.181  
0.051  
0.107  
0.027  
0.034  
0.066  
0.066  
0.202  
0.106  
0.409  
Dia  
C
D
L5  
L7  
E
F
L6  
F1  
F2  
G
L2  
F2  
D
F1  
L9  
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
M
L4  
16.4 typ.  
0.645 typ.  
F
13  
14  
0.511  
0.104  
0.600  
0.244  
0.137  
0.551  
0.116  
0.620  
0.259  
0.154  
M
2.65  
15.25  
6.20  
3.50  
2.95  
15.75  
6.60  
3.93  
G1  
E
G
2.6 typ.  
0.102 typ.  
Diam.  
3.75  
3.85  
0.147  
0.151  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2000 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom  
http://www.st.com  
8/8  

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