TS420-700T-TR [STMICROELECTRONICS]
4A SCRs; 4A可控硅型号: | TS420-700T-TR |
厂家: | ST |
描述: | 4A SCRs |
文件: | 总8页 (文件大小:141K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TS420 Series
®
SENSITIVE
4A SCRs
MAIN FEATURES:
Symbol
A
Value
Unit
A
G
I
4
T(RMS)
K
A
V
/V
600 and 700
200
V
DRM RRM
A
I
µA
GT
K
A
G
DPAK
(TS420-B)
K
A
G
DESCRIPTION
IPAK
(TS420-H)
Thanks to highly sensitive triggering levels, the
TS420 series is suitable for all applications where
the available gate current is limited, such as motor
control for hand tools, kitchen aids, overvoltage
crowbar protection for low power supplies, ...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
A
K
A
G
TO-220AB
(TS420-T)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current (180° conduction angle)
T(RMS)
Tl = 115°C
4
A
A
IT
I
Average on-state current (180° conduction angle)
(AV)
Tl = 115°C
Tj = 25°C
2.5
Non repetitive surge peak on-state
current
tp = 8.3 ms
tp = 10 ms
33
30
TSM
A
2
²
²
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
4.5
50
A S
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
Tj = 125°C
A/µs
I
= 2 x I , tr ≤ 100 ns
G
GT
I
Peak gate current
Tj = 125°C
Tj = 125°C
1.2
0.2
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
Tj
September 2000 - Ed: 3
1/8
TS420 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
TS420
Unit
I
GT
MAX.
200
µA
V
V
= 12 V
R = 33 Ω
D
L
V
MAX.
MIN.
MIN.
0.8
0.1
8
GT
V
Tj = 125°C
V
I
= V
R = 3.3 kΩ
R = 220 Ω
GK
V
GD
D
DRM
L
V
= 10 µA
V
RG
RG
I
I = 50 mA
R
R
= 1 kΩ
= 1 kΩ
MAX.
MAX.
MIN.
5
mA
mA
V/µs
V
H
T
GK
I
I
= 1 mA
6
L
G
GK
V
I
= 67 % V
R
= 220 Ω
dV/dt
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
5
D
DRM
GK
V
= 8 A tp = 380 µs
MAX.
MAX.
MAX.
MAX.
1.6
0.85
90
5
TM
TM
V
Threshold voltage
V
t0
R
Dynamic resistance
mΩ
µA
mA
d
I
I
DRM
RRM
V
= V
RRM
R
= 220 Ω
GK
DRM
1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
R
Junction to case (DC)
°C/W
°C/W
3.0
th(j-c)
²
Junction to ambient (DC)
DPAK
70
S = 0.5 cm
th(j-a)
IPAK
100
60
TO-220AB
S = copper surface under tab
PRODUCT SELECTOR
Voltage (xxx)
Part Number
Sensitivity
Package
600 V
700 V
TS420-xxxB
TS420-xxxH
TS420-xxxT
X
X
X
X
X
X
200 µA
200 µA
200 µA
DPAK
IPAK
TO-220AB
ORDERING INFORMATION
SCR
SERIES
PACKING MODE
Blank:Tube
-TR: DPAK tape & reel
PACKAGE:
B: DPAK
H: IPAK
T:TO-220AB
CURRENT: 4A
SENSITIVITY:
20: 200µA
VOLTAGE:
600: 600V
700: 700V
2/8
TS420 Series
OTHER INFORMATION
Part Number
Marking
Weight
Base Quantity
Packing mode
TS420-x00B
TS420-x00B-TR
TS420-x00H
TS420-x00T
TS420x00
TS420x00
0.3 g
0.3 g
0.4 g
2.3 g
75
2500
75
Tube
Tape & reel
Tube
TS420x00
TS420x00T
50
Tube
Note: x = voltage
Fig. 1: Maximum average power dissipation
Fig. 2-1: Average and D.C. on-state current
versus average on-state current.
versus case temperature.
P(W)
IT(av)(A)
4.0
5.0
4.5
α = 180°
3.5
DC
4.0
3.5
3.0
2.5
2.0
1.5
3.0
α = 180°
2.5
2.0
1.5
1.0
0.5
0.0
360°
1.0
0.5
IT(av)(A)
α
Tcase(°C)
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (DPAK).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout, FR4 PC board) for
DPAK.
IT(av)(A)
2.0
1.8
DC
DPAK
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
(S = 0.5cm2
)
α = 180°
IPAK
DC
α = 180°
Tamb(°C)
50 75
0
25
100
125
3/8
TS420 Series
Fig. 4: Relative variation of gate trigger current
Fig. 5: Relative variation of holding current
and holding current versus junction temperature.
versus gate-cathode resistance (typical values).
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C]
IH[Rgk] / IH[Rgk = 1kΩ]
2.0
1.8
IGT
1.6
1.4
1.2
IH & IL
1.0
0.8
0.6
0.4
0.2
0.0
Rgk = 1kΩ
Tj(°C)
40 60
Rgk(kΩ)
-40 -20
0
20
80 100 120 140
Fig. 6: Relative variation of dV/dt immunity
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
versus gate-cathode resistance (typical values).
dV/dt[Cgk] / dV/dt [Rgk = 220 Ω]
dV/dt[Rgk] / dV/dt [Rgk = 220Ω]
10
10.00
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 220Ω
Tj=125°C
VD=0.67xVDRM
8
6
4
2
1.00
0.10
Cgk(nF)
Rgk(Ω)
0
0.01
0
2
4
6
8
10 12 14 16 18 20 22
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 8: Surge peak on-state current versus
number of cycles.
Fig. 9: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.
a
ITSM(A)
2
2
ITSM(A),I t(A s)
35
300
100
Tj initial = 25°C
30
ITSM
dI/dt
limitattion
tp = 10ms
Non repetitive
Tj initial = 25°C
25
One cycle
20
15
10
5
10
1
I2t
Repetitive
Tcase = 115 °C
tp(ms)
Number of cycles
0
0.01
0.10
1.00
10.00
1
10
100
1000
4/8
TS420 Series
Fig. 10: On-state characteristics (maximum
values).
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm)
(DPAK).
ITM(A)
Rth(j-a) (°C/W)
50.0
100
Tj max.:
Vto = 0.85V
Rd = 90mΩ
80
60
40
20
10.0
Tj = Tj max.
1.0
Tj = 25°C
2
S(cm )
VTM(V)
0
0.1
0
2
4
6
8
10 12 14 16 18 20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5/8
TS420 Series
PACKAGE MECHANICAL DATA
DPAK (Plastic)
DIMENSIONS
Millimeters
REF.
Inches
Min.
Max
Min.
Max.
A
A1
A2
B
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
0.086
0.035
0.001
0.025
0.204
0.017
0.018
0.236
0.251
0.173
0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
B2
C
R
C2
D
R
E
G
H
L2
L4
R
0.80 typ.
0.031 typ.
0.60
1.00
0.023
0.039
0.2 typ.
0.007 typ.
0°
V2
0°
8°
8°
FOOTPRINT DIMENSIONS (in millimeters)
DPAK (Plastic)
6.7
6.7
3
3
1.6
1.6
2.3 2.3
6/8
TS420 Series
PACKAGE MECHANICAL DATA
IPAK (Plastic)
DIMENSIONS
Millimeters
REF.
Inches
Min. Typ. Max. Min. Typ. Max.
A
A1
A3
B
2.2
0.9
2.4
1.1
1.3
0.9
5.4
0.85
0.086
0.035
0.027
0.025
0.204
0.094
0.043
0.051
0.035
0.212
0.033
A
E
C2
0.7
B2
0.64
5.2
L2
B2
B3
B5
B6
C
0.3
0.035
D
0.95
0.6
0.6
6.2
6.6
4.6
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
H
B3
C2
D
L1
B6
L
A1
B
V1
E
6.4
4.4
15.9
9
G
H
16.3 0.626
B5
C
L
9.4
1.2
1
0.354
0.031
G
A3
L1
L2
V1
0.8
0.8
0.031 0.039
10°
10°
7/8
TS420 Series
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
Millimeters
REF.
Inches
Max.
Min.
Max.
Min.
A
H2
A
C
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
Dia
C
D
L5
L7
E
F
L6
F1
F2
G
L2
F2
D
F1
L9
G1
H2
L2
L4
L5
L6
L7
L9
M
L4
16.4 typ.
0.645 typ.
F
13
14
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
M
2.65
15.25
6.20
3.50
2.95
15.75
6.60
3.93
G1
E
G
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2000 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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8/8
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