TS1220 [STMICROELECTRONICS]
SENSITIVE SCR; 敏感SCR
ST 
®
TS1220-600B
SENSITIVE SCR
FEATURES
IT(RMS) = 12A
A
VDRM/VRRM = 600V
µ
IGT < 200 A
HIGH ITSM = 110A (tp = 10ms)
A
G
K
DESCRIPTION
The TS1220-600B is using a high performance
TOPGLASS PNPN technology and is intended for
applications requiring high surge capability (like
power tools, crowbar protection, capacitive dis-
charge ignition...).
DPAK
(Plastic)
ABSOLUTE RATINGS
Symbol
(limiting values)
Parameter
Value
Unit
VDRM
VRRM
Repetitive peak off-state voltage
600
V
Ω
RGK = 220
Tj = 125°C
°
IT(RMS)
IT(AV)
ITSM
RMS on-state current
Tc= 105 C
12
8
A
A
A
°
(180 conduction angle)
Average on-state current
°
Tc= 105 C
°
(180 conduction angle)
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 10 ms
tp = 8.3 ms
tp = 10 ms
110
115
I2t Value for fusing
I2t
40
50
A2s
µ
A/ s
dI/dt
Critical rate of rise of on-state current
µ
dIG /dt = 0.1 A/ s.
IG = 10 mA
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Maximum temperature for soldering during 10s
°
C
T
260
May 1998 - Ed: A3
1/5
TS1220-600B
THERMAL RESISTANCES
Symbol
Parameter
Value
1.5
Unit
Junction to case for D.C
°
C/W
Rth(j-c)
Rth(j-a)
Junction to ambient (S = 0.5 cm2)
70
°C/W
GATE CHARACTERISTICS
(maximum values)
µ
µ
IGM = 1.2 A (tp = 20 s)
PG (AV)= 0.2W
PGM = 3 W (tp = 20 s)
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
Type
Tj= 25 C MAX
Value
200
0.8
0.1
8
Unit
Ω
VD=12V RL=140
°
µ
A
Ω
VGT
VD=12V RL=140
VD=12V(DC) RL=33
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
MAX
MAX
MIN
V
Ω
VGD
VRG
IH
V
V
µ
IRG = 10 A
Ω
IT=50mA IG=5mA RGK = 1k
MAX
5
mA
V
µ
°
VTM
IDRM
IRRM
dV/dt
ITM= 24A tp= 380 s
Tj= 25 C MAX
Tj= 25°C MAX
Tj= 125°C MAX
1.6
10
2
Ω
Ω
VD= VDRM
VR= VRRM
RGK = 220
µ
A
RGK = 220
mA
Ω
°
µ
V/ s
VD=67%VDRM RGK = 220
Tj= 125 C MIN
5
ORDERING INFORMATION
Add "-TR" suffix for Tape and Reel shipment
TS 12 20 - 600 B
THYRISTOR
SENSITIVE
VOLTAGE
PACKAGE
B = DPAK
CURRENT
SENSITIVITY
2/5
TS1220-600B
Fig 1:
Fig 2:
Correlation between maximum average
power dissipation and maximum allowable tem-
peratures (Tamb and Tcase).
Maximum average power dissipation versus
average on-state current.
Note: Rth=0°C/W is infinite heatsink.
P(W)
Tcase (°C)
P(W)
14
14
13
12
11
10
9
α
α
Rth=0°C/W
α
12
105
α
α
10
110
115
α
8
8
7
6
6
4
2
5
Rth(j-a)=37°C/W
4
Rth(j-a)=80°C/W
120
125
3
180°
2
α
1
α
0
I
T(AV)(A)
0
25
50
75
Tamb(°C)
100
125
0
0
1
2
3
4
5
6
7
8
9 10 11 12
Fig 3-1:
case temperature.
Fig 3-2:
Average and D.C. on-state current versus
ambient temperature (device mounted on FR4 with
recommended pad layout).
Average and D.C. on-state current versus
I
T(AV)(A)
I
T(AV)(A)
13
12
11
10
9
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
D.C.
8
α
7
α
6
5
4
3
2
1
Tcase(°C)
Tamb(°C)
0
0
25
50
75
100
125
0
25
50
75
100
125
Fig 4:
Fig 4-2:
Relative variation of thermal impedance
junction to ambient versus pulse duration (re-
comended pad layout).
Relative variation of thermal impedance
junction to case versus pulse duration.
K=[Zth(j-a)/Rth(j-a)]
K=[Zth(j-c)/Rth(j-c)]
1.0
1.00
0.5
0.2
0.10
tp(s)
tp(s)
0.1
0.01
1E-3
1E-2
1E-1
1E+0
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
3/5
TS1220-600B
Fig 5:
Fig 6:
Relative variation of gate trigger current and
Relative variation of holding current versus
holding current versus junction temperature.
gate-cathode resistance (typical values).
IH[RGK] / IH [RGK=1k ]
Ω
I
GT,I
H
[Tj]/IGT,IH[Tj=25°C]
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj=25°C
I
GT
I
H
Tj(°C)
20 40 60 80 100 120 140
RGK(Ω)
-40 -20
0
1E+1
1E+2
1E+3
1E+4
Fig 7:
versus number of cycles.
Fig 8:
Non repetitive surge peak on-state current
Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I2t.
I
TSM(A),I²t(A²s)
I
TSM(A)
120
110
100
90
80
70
60
50
40
30
20
10
0
500
100
Tj initial=25°C
F=50Hz
Tj initial=25°C
I
TSM
I²t
Number of cycles
10 100
tp(ms)
10
1
1000
1
2
5
10
Fig 9:
Fig 10:
Thermal resistance junction to ambient
On-state characteristics (maximum values).
versus copper surface under tab (Epoxy printed
µ
circuit board FR4, copper thickness: 35 m).
I
TM(A)
Rth(j-a) (°C/W)
100.0
10.0
1.0
100
Tj max.:
Vto=0.85V
Rt=31mΩ
80
60
40
Tj=Tj max.
Tj=25°C
20
S(Cu) (cm²)
V
TM(V)
0
0.1
0
2
4
6
8
10 12 14 16 18 20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
4/5
TS1220-600B
PACKAGE MECHANICAL DATA
DPAK (Plastic)
DIMENSIONS
Millimeters Inches
Min. Typ. Max Min. Typ. Max.
REF.
A
2.20
2.40 0.086
1.10 0.035
0.23 0.001
0.90 0.025
5.40 0.204
0.60 0.017
0.60 0.018
6.20 0.236
6.60 0.251
4.60 0.173
10.10 0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
A1 0.90
A2 0.03
B
0.64
B2 5.20
0.45
C2 0.48
C
D
E
6.00
6.40
4.40
9.35
G
H
L2
0.80
0.031
L4 0.60
1.00 0.023
0.039
8°
V2
0°
8°
0°
MARKING
FOOT PRINT DIMENSIONS
(in millimeters)
TYPE
TS1220-600B
MARKING
6.7
TS
1220
6
6.7
6.7
3
1.6
1.6
2.3 2.3
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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