TLPXXM [STMICROELECTRONICS]
TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE; 电信线路三极过压保护型号: | TLPXXM |
厂家: | ST |
描述: | TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE |
文件: | 总14页 (文件大小:158K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLPxxM/G/G-1
TRIPOLAR OVERVOLTAGE
PROTECTION for TELECOM LINE
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Any sensitive telecom equipment requiring protec-
tion against lightning :
GND
TIP
TIP
RING
RING
RING
Analog and ISDN line cards
Main Distribution Frames
TIP
TIP
TIP
RING
RING
Terminal and transmission equipment
Gas-tube replacement
PowerSO-10TM TLPxxM
DESCRIPTION
The TLPxxM/G/G-1 series are tripolar transient
surge arrestors used for primary and secondary
protectionin sensitivetelecom equipment.
GND
TAB
FEATURES
GND
TRIPOLAR CROWBAR PROTECTION
TIP
RING
VOLTAGE
TELECOMAPPLICATIONS
RANGE
SELECTED
FOR
D2PAK TLPxxG
REPETITIVE PEAK PULSE CURRENT :
IPP = 100 A (10 / 1000 s)
µ
HOLDINGCURRENT : IH = 150 mA
LOW CAPACITANCE : C = 110 pF typ.
LOW LEAKAGE CURRENT : I = 5 A max
µ
R
GND
TA B
BENEFITS
No ageing and no noise.
TIP GND RING
If destroyed, the TLPxxM/G/G-1 falls into short
circuit, still ensuringprotection.
I2PAK TLPxxG-1
Access to Surface Mount applications thanks to
the PowerSO-10TM and D2PAK package.
TM: ASD and PowerSO-10 are trademarks of ST Microelectronics.
September 1998 - Ed : 3C
1/14
TLPxxM/G/G-1
Peak Surge
Voltage
(V)
Voltage
Waveform
(µs)
Current
Waveform
(µs)
Admissible Necessary
COMPLIESWITH THE
FOLLOWING STANDARDS:
Ipp
(A)
Resistor
(Ω)
CCITT K20
VDE0433
4000
4000
4000
10/700
10/700
1.2/50
5/310
5/310
1/20
100
100
100
-
-
-
VDE0878
IEC-1000-4-5
level 4
level 4
10/700
1.2/50
5/310
8/20
100
100
-
-
FCC Part 68, lightning surge
type A
1500
800
10/160
10/560
10/160
10/560
200
100
-
-
FCC Part 68, lightning surge
type B
1000
5/320
5/320
25
-
BELLCORETR-NWT-001089
FIRST LEVEL
2500
1000
2/10
10/1000
2/10
10/1000
500
100
-
-
BELLCORETR-NWT-001089
SECOND LEVEL
5000
2/10
2/10
500
-
CNET I31-24
4000
0.5/700
0.8/310
100
-
TYPICAL APPLICATION
Primaryprotection module
TLPxxM/G/G-1
Analog
Line
Card
Main Distribution Frame
Analog line card protection
- Vbat
LCP1511D
TLPxxM/G/G-1
PTC
LINE A
RING
RELAY
SLIC
nF
220
LINE B
PTC
2/14
TLPxxM/G/G-1
TYPICAL APPLICATION
ISDN: U interface protection
1/2 DA108S1
TLPxxM/G/G-1
R3
R4
Internal
circuitry
R5
Power
Feeder
PARAMETER MEASUREMENT INFORMATION
Symbol
IPP
Description
Peak pulse current
IPP
ITSM
IR
IRM
IH
Maximum peak on-state current
Leakage current
IH
IR
Leakage current
IRM
Holding current
VRM
VR VBO
VBR
VR
Breakdown voltage
Continuous reverse voltage
Maximum stand-off voltage
Breakovervoltage
VRM
VBO
C
Capacitance
ABSOLUTE MAXIMUM RATINGS
Symbol
(Tamb = 25°C)
Parameter
Value
Unit
IPP
Peak pulse current(longitudinal& transversalmode) :
10/1000 µs (open circuit voltage waveform 1 kV 10/1000 µs)
100
250
500
A
A
A
8/20 s
(open circuit voltage waveform 4 kV 1.2/50 s)
(opencircuit voltage waveform 2.5kV 2/10 µs)
µ
µ
2/10 µs
ITSM
Mains power induction
VRMS = 300V, R = 600Ω
t = 200ms
0.7
A
Mains power contact
V
RMS = 220V,R = 10Ω (Fail-Safe threshold)
t = 200 ms
t = 15 mn
31
0.42
A
VRMS = 220V, R = 600
A
Ω
Tstg
Tj
Storagetemperature range
- 55 to + 150
150
°C
°C
°C
°C
Maximum operating junction temperature
Maximum lead temperature for soldering during 10 s
Operatingtemperaturerange
TL
260
TOP
- 40 to + 85
3/14
TLPxxM/G/G-1
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
C/W
Rth (j-c)
Junction to case
TLPxxM
TLPxxG
TLPxxG-1
1.0
1.0
1.0
°
Rth (j-a)
Junction to ambient
TLPxxM
TLPxxG
TLPxxG-1
see table page 14 °C/W
see table page 14
see table page 14
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND RING
IRM @ VRM
(Tamb = 25°C)
IR @ VR
C
typ.
note
pF
max.
max.
Type
µA
5
V
µA
50
50
50
V
TLP140M/G/G-1
TLP200M/G/G-1
TLP270M/G/G-1
120
180
230
140
200
270
35
5
35
5
35
Note : V = 50 V bias,
V
RMS
= 1V, F = 1 MHz.
R
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND GND, RING AND GND(Tamb = 25°C)
VBO
IBO
@
I
RM @ VRM
IR @ VR
IH
C @ VR
typ.
max.
max.
note 1
max.
max.
min.
Type
note 2
V
note 3 note 4 note 5
µA
5
V
120
µA
50
50
50
V
mA
500
500
500
mA
150
150
150
pF
pF
40
40
40
TLP140M/G/G-1
TLP200M/G/G-1
TLP270M/G/G-1
140
200
270
200
290
400
110
110
110
5
180
5
230
Note 1: I measured at V guarantees V
> V .
R
R
R
BR min
Note 2: Measured at 50 Hz.
Note 3: See functional holding current test circuit.
Note 4: V = 0V bias, V = 1V, F = 1 MHz.
R
RMS
Note 5: V = 50V bias, V
= 1V, F = 1 MHz (TIP or RING (-) / GND (+)).
RMS
R
4/14
TLPxxM/G/G-1
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT: GO-NO GO TEST
R
- V
P
V
- 48 V
BAT
D.U.T.
=
generator
Surge
This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functionaltest circuit.
TEST PROCEDURE :
- Adjust the current level at the IH value by short circuiting the D.U.T.
- Firethe D.U.T. with a surge current : IPP = 10A, 10/1000 s.
µ
- The D.U.T. will come back to the off-state within a duration of 50ms max.
MARKING
Package
Types
Marking
PowerSO-10 TLP140M
TLP200M
TLP140M
TLP200M
TLP270M
TLP270M
D2PAK
TLP140G
TLP200G
TLP270G
TLP140G
TLP200G
TLP270G
I2PAK
TLP140G-1
TLP200G-1
TLP270G-1
TLP140G
TLP200G
TLP270G
ORDER CODE
TPL 270 M TR
-
Packaging:
-TR= tapeandreelonlyfor”M”version(600pcs)
= tube (50 pcs)
Tripolar Line Protection
BreakdownVoltage
Package:
M : Power SO10
G : D2PAK
G-1 : I2PAK
5/14
TLPxxM/G/G-1
Fig. 1: Maximum peak on-statecurrent versus
Fig. 2: Relative variation of IH versus Tamb.
pulse duration.
ITSM(A)
IH (Tamb) / IH (25°C)
100
2
90
1.8
1.6
1.4
1.2
1
TIP or RING
vs GND
F=50Hz
Tj initial=25°C
80
70
60
50
40
30
20
10
0
0.8
0.6
Tamb (°C)
t(s)
0.4
-40
0.01
0.1
1
10
100
1000
-20
0
20
40
60
80
Fig. 3-1 :junction capacitanceversus applied re-
verse voltage (typical values) (TLP140M/G/G-1).
Fig. 3-2 :
junction capacitanceversus appliedre-
verse voltage (typical values) (TLP200M/G/G-1).
C(pF)
C(pF)
200
200
F=1MHz
Vosc=1VRMS
Tj=25°C
F=1MHz
Vosc=1VRMS
Tj=25°C
LINE+ / GND-
100
LINE+ / GND-
100
LINE / LINE
50
LINE / LINE
50
LINE- / GND+
LINE- / GND+
20
20
VR(V)
VR(V)
10
10
1
10
100 200
1
10
100 200
Fig. 3-3 :junction capacitanceversus applied re-
verse voltage (typical values) (TLP270M/G/G-1).
Fig. 4: Test diagram for breakover voltage
measurement.
C(pF)
200
TIP
F=1MHz
Vosc=1VRMS
Tj=25°C
VBO
TIP - GND
100
10 / 1000 µs
100 A
surge generator
VBO
TIP RING
LINE+ / GND-
GND
50
LINE / LINE
RING
LINE- / GND+
20
VR(V)
10
1
10
100
300
6/14
TLPxxM/G/G-1
Fig. 5-1 : Breakovervoltage measurement
(TLP140M/G/G-1).
Fig. 5-2 :
Breakovervoltage measurement
(TLP200M/G/G-1).
Vbr/Vbr
Vbo/Vbr
2.6
2.6
2.4
2.4
2.2
2
TIP RING
2.2
2
TIP RING
1.8
1.6
1.4
1.2
1
1.8
1.6
1.4
1.2
1
TIP+ GND -
TIP+ GND -
TIP- GND +
1,000 10,000 100,000
TIP- GND +
1,000 10,000 100,000
0.01
0.1
1
10
100
0.01
0.1
1
10
100
dV/dt
dV/dt
Fig. 5-3 : Breakovervoltage measurement
(TLP270M/G/G-1).
Vbo/Vbr
2.6
2.4
TIP RING
2.2
2
1.8
1.6
1.4
1.2
1
TIP+ GND -
TIP- GND +
1,000 10,000 100,000
0.01
0.1
1
10
100
dV/dt
7/14
TLPxxM/G/G-1
PACKAGE MECHANICAL DATA
D2PAK Plastic
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
E
C2
A
4.30
4.60 0.169
2.69 0.098
0.23 0.001
0.93 0.027
0.181
0.106
0.009
0.037
L2
A1 2.49
A2 0.03
D
B
B2
C
0.70
L
1.40
0.055
L3
0.45
0.60 0.017
1.36 0.047
9.35 0.352
10.28 0.393
5.28 0.192
15.85 0.590
1.40 0.050
1.75 0.055
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
A1
C2 1.21
B2
B
D
E
G
L
8.95
10.00
4.88
R
C
G
15.00
A2
L2 1.27
L3 1.40
R
2.0 MIN.
FLAT ZONE
0.40
0.016
V2
V2
0°
8°
0°
8°
FOOT-PRINT D2PAK
16.90
10.30
5.08
1.30
3.70
8.90
8/14
TLPxxM/G/G-1
PACKAGE MECHANICAL DATA
I2PAK Plastic
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
4.30
4.60 0.169
2.69 0.098
0.93 0.028
1.38 0.047
0.181
0.106
0.037
0.054
A1 2.49
0.70
B
B1 1.20
B2 1.25 1.40
0.049 0.055
C
0.45
0.60 0.018
1.36 0.048
9.35 0.352
2.64 0.096
10.28 0.394
13.60 0.516
3.78 0.137
1.40 0.050
0.024
0.054
0.368
0.104
0.405
0.535
0.149
0.055
C2 1.21
D
e
8.95
2.44
E
L
10.00
13.10
L1 3.48
L2 1.27
V
5°
5°
V4
45°
45°
9/14
TLPxxM/G/G-1
PACKAGE MECHANICAL DATA
Power-SO10
B
0.10 A B
10
6
E3 E1
E
H
E2
1
5
SEATING
PLANE
A
e
B
DETAIL ”A”
C
0.25 M
Q
D
h
D1
A
F
SEATING
PLANE
A1
A1
L
DETAIL”A”
a
E4
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
REF.
A
3.35
3.65 0.131
0.10 0.00
0.60 0.0157
0.55 0.0137
9.60 0.370
7.60 0.291
9.50 0.366
7.40 0.283
7.60 0.283
0.143
0.0039
0.0236
0.0217
0.378
0.299
0.374
0.291
0.299
E3 6.10
6.35 0.240
6.10 0.232
0.250
0.240
A1 0.00
E4 5.90
e
B
C
D
0.40
0.35
9.40
1.27
0.05
F
H
h
1.25
1.35 0.0492
14.40 0.543
0.0531
0.567
13.80
D1 7.40
9.30
0.50
1.70
0.019
0.067
E
L
1.20
1.80 0.0472
0.0708
E1 7.20
E2 7.20
Q
a
0°
8°
0°
8°
10/14
TLPxxM/G/G-1
FOOT PRINT
Power-SO10
HEADER SHAPE
MOUNTING PAD LAYOUT
RECOMMENDED
Dimensions in millimeters
Dimensions in millimeters
SHIPPING TUBE
DIMENSIONS (mm)
C
TYP
B
A
B
18
12
C
0,8
532
Length tube
Quantity per tube
50
A
Surface mount film taping : contact sales office
11/14
TLPxxM/G/G-1
SOLDERING RECOMMENDATION
Voids pose a difficult reliability problem for large
surface mount devices. Such voids under the
package result in poor thermal contact and the
high thermal resistance leads to component fail-
ures. The PowerSO-10 is designedfromscratch to
be solelya surfacemount package, hence symme-
try in the x- and y-axis gives the package excellent
weight balance.Moreover, the PowerSO-10 offers
the unique possibility to control easily the flatness
and quality of the soldering process. Both the top
and the bottom soldered edges of thepackage are
accessible for visual inspection (soldering menis-
cus).
Coplanarity between the substrate and the pack-
age can be easily verified. The qualityof the solder
joints is very important for two reasons : (I) poor
quality solder joints result directly in poor reliability
and (II) solder thickness affects the thermal resis-
tance significantly. Thus a tight control of this pa-
rameter results in thermally efficient and reliable
solder joints.
The soldering process causes considerable ther-
mal stress to a semiconductor component. This
has to be minimized to assure a reliable and ex-
tended lifetime of the device. The PowerSO-10
package can be exposed to a maximum tempera-
ture of 260°C for 10 seconds. However a proper
soldering of the package could be done at 215°C
for 3 seconds. Any solder temperature profile
should be within these limits. As reflow techniques
are most common in surface mounting, typical
heating profiles are given in Figure 1,either for
mounting on FR4 or on metal-backed boards. For
each particular board, the appropriate heat profile
has to be adjusted experimentally. The present
proposal is just a startingpoint. In anycase, the fol-
lowing precautions have to be considered :
- always preheat the device
- peak temperatureshould be at least30 °C
higherthan the melting point of the solder
alloy chosen
- thermal capacityof the base substrate
Fig. 1 : Typical reflow soldering heat profile
Temperature (o C)
250
245oC
215oC
200
Soldering
Epoxy FR4
150
100
50
board
Preheating
Cooling
Metal-backed
board
0
0
40
80
120 160 200 240 280 320 360
Time (s)
12/14
TLPxxM/G/G-1
SUBSTRATES AND MOUNTINGINFORMATION
decrease thermal resistance accordingly. Using
a configurationwith 16 holesunder the spreaderof
the package with a pitch of 1.8 mm and a diameter
of 0.7 mm, the thermal resistance (junction -
heatsink) can be reduced to 12°C/W (see fig. 3).
Beside the thermal advantage, this solution allows
multi-layer boards to be used. However, a draw-
back of this traditional material prevents its use in
veryhigh power,high currentcircuits. For instance,
it is not advisable to surface mount devices with
currents greater than 10 A on FR4 boards. A
Power Mosfetor Schottkydiode in a surfacemount
power package can handle up to around 50 A if
better substratesare used.
The use of epoxy FR4 boards is quite common for
surface mounting techniques, however, their poor
thermal conduction compromises the otherwise
outstandingthermalperformanceof the PowerSO-
10. Some methods to overcome this limitation are
discussed below.
One possibility to improve the thermal conduction
is the use of large heat spreader areas at the cop-
per layer of the PC board.This leadsto a reduction
of thermal resistance to 35 °C for 6 cm2 of the
board heatsink(see fig. 2).
Use of copper-filledthrough holes on conventional
FR4 techniqueswill increase the metallization and
Fig. 2 :
Mountingon epoxy FR4 head dissipation by extending the area of the copper layer
Copper foil
FR4 board
Fig. 3 :
Mounting on epoxy FR4 by using copper-filled through holes for heat transfer
Copper foil
FR4 board
heatsink
heat transfer
13/14
TLPxxM/G/G-1
A new technologyavailable today is IMS - an Insu-
lated Metallic Substrate. This offers greatly en-
hanced thermal characteristics for surface
mount components. IMS is a substrate consisting
of threedifferent layers, (I) the basematerialwhich
is available as an aluminium or a copper plate, (II)
a thermal conductive dielectrical layer and (III) a
copper foil, which can be etched as a circuit layer.
Using this material a thermal resistance of 8°C/W
with 40 cm2 of board floating in air is achievable
(see fig. 4). If evenhigherpower is to be dissipated
an externalheatsink could be applied which leads
to an Rth(j-a) of 3.5°C/W (see Fig. 5), assuming
that Rth (heatsink-air) is equal to Rth (junction-
heatsink). This is commonly applied in practice,
leading to reasonable heatsink dimensions. Often
power devices are defined by considering the
maximum junction temperature of the device. In
practice , however, this is far from being exploited.
A summary of various power management capa-
bilities is made in table 1 based on a reasonable
delta T of 70°C junction to air.
The PowerSO-10 concept also represents an
attractive alternative to C.O.B. techniques.
PowerSO-10 offers devices fully tested at low
and high temperature. Mounting is simple - only
conventional SMT is required - enabling the users
to getrid ofbond wire problemsand the problem to
control the high temperaturesoft soldering as well.
An optimized thermal management is guaranteed
through PowerSO-10 as the power chips must in
any case be mounted on heat spreaders before
being mounted onto the substrate.
Fig. 4 : Mounting on metal backed board
Fig. 5 :
Mounting on metal backed board with an
external heatsinkapplied
Copperfoil
FR4board
Copper foil
Insulation
Aluminium
Aluminium
heatsink
TABLE 1
Printed circuit board material
1.FR4 using the recommended pad-layout
2.FR4 with heatsink on board (6cm2)
Rth (j-a)
50 °C/W
35 °C/W
12 °C/W
8 °C/W
P Diss
1.5 W
2.0 W
5.8 W
8.8 W
20 W
3.FR4 with copper-filled through holes and external heatsink applied
4. IMS floating in air (40 cm2)
5. IMS with external heatsink applied
3.5 °C/W
Informationfurnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor forany infringementof patents or other rights of thirdparties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics - Printed in Italy - All rights reserved.
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14/14
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