TIP121 [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS; 互补硅功率达林顿晶体管
| 型号： | TIP121 |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 文件： | 总4页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIP120/121/122
TIP125/126/127
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The TIP120, TIP121 and TIP122 are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications.
The complementary PNP types are TIP125,
TIP126 and TIP127, respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
TIP120
TIP125
60
TIP121
TIP122
TIP127
100
TIP126
VCBO
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
80
80
5
V
V
V
A
A
A
60
100
5
ICM
Collector Peak Current
Base Current
8
IB
0.1
o
Ptot
65
2
W
W
Total Dissipation at Tcase ≤ 25 C
o
Tamb ≤ 25 C
Tstg
Tj
Storage Temperature
-65 to 150
150
oC
oC
Max. Operating Junction Temperature
* For PNP types voltage and current values are negative.
1/4
March 2000
TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
1.92
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEO
Collector Cut-off
Current (IB = 0)
for TIP120/125
for TIP121/126
for TIP122/127
VCE = 30 V
VCE = 40 V
VCE = 50 V
0.5
0.5
0.5
mA
mA
mA
ICBO
Collector Cut-off
Current (IB = 0)
for TIP120/125
for TIP121/126
for TIP122/127
VCB = 60 V
VCB = 80 V
VCB = 100 V
0.2
0.2
0.2
mA
mA
mA
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
2
mA
V
CEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 30 mA
for TIP120/125
for TIP121/126
for TIP122/127
60
80
100
V
V
V
VCE(sat)
*
Collector-Emitter
Saturation Voltage
IC = 3 A
IC = 5 A
IB = 12 mA
IB = 20 mA
2
4
V
V
VBE(on)
hFE
*
Base-Emitter Voltage
DC Current Gain
IC = 3 A
VCE = 3 V
2.5
V
*
IC = 0.5 A
IC = 3 A
VCE = 3 V
VCE = 3 V
1000
1000
Pulsed: Pulse duration = 300 µs, duty cycle < 2 %
For PNP types voltage and current values are negative.
2/4
TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
P011C
3/4
TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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4/4
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