TDA2050 [STMICROELECTRONICS]

32W Hi-Fi AUDIO POWER AMPLIFIER; 32W高保真音频功率放大器
TDA2050
型号: TDA2050
厂家: ST    ST
描述:

32W Hi-Fi AUDIO POWER AMPLIFIER
32W高保真音频功率放大器

放大器 功率放大器
文件: 总13页 (文件大小:187K)
中文:  中文翻译
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TDA2050  
32W Hi-Fi AUDIO POWER AMPLIFIER  
HIGH OUTPUT POWER  
(50W MUSIC POWER IEC 268.3 RULES)  
HIGH OPERATING SUPPLY VOLTAGE (50V)  
SINGLE OR SPLIT SUPPLY OPERATIONS  
VERY LOW DISTORTION  
SHORT CIRCUIT PROTECTION (OUT TO  
GND)  
THERMAL SHUTDOWN  
Pentawatt  
ORDERING NUMBERS: TDA2050V  
DESCRIPTION  
TDA2050H  
The TDA 2050 is a monolithic integrated circuit in  
Pentawatt package, intended for use as an audio  
class AB audio amplifier. Thanks to its high power  
capability the TDA2050 is able to provide up to  
35W true rms power into 4 ohm load @ THD =  
10%, VS = ±18V, f = 1KHz and up to 32W into  
8ohm load @ THD = 10%, VS = ±22V, f = 1KHz.  
Moreover, the TDA 2050 delivers typically 50W  
music power into 4 ohm load over 1 sec at VS=  
22.5V, f = 1KHz.  
The high power and very low harmonic and cross-  
over distortion (THD = 0.05% typ, @ VS = ±22V,  
PO = 0.1 to 15W, RL=8ohm, f = 100Hz to 15KHz)  
make the device most suitable for both HiFi and  
high class TV sets.  
TEST AND APPLICATION CIRCUIT  
March 1995  
1/13  
This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  
TDA2050  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
VS  
Vi  
Supply Voltage  
±25  
V
Input Voltage  
VS  
Vi  
Differential Input Voltage  
±15  
V
A
IO  
Output Peak Current (internally limited)  
Power Dissipation TCASE = 75°C  
5
25  
Ptot  
Tstg, Tj  
W
°C  
Storage and Junction Temperature  
-40 to 150  
PIN CONNECTION (Top view)  
SCHEMATIC DIAGRAM  
THERMAL DATA  
Symbol  
Description  
Value  
Unit  
Rth j-case Thermal Resistance junction-case  
Max  
3
°C/W  
2/13  
TDA2050  
ELECTRICAL CHARACTERISTICS (Refer to the Test Circuit, VS = ±18V, Tamb = 25°C, f = 1 kHz; un-  
less otherwise specified)  
Symbol  
Parameter  
Supply Voltage Range  
Quiescent Drain Current  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
VS  
Id  
±4.5  
±25  
V
VS = ±4.5V  
S = ±25V  
30  
55  
50  
90  
mA  
mA  
V
Ib  
Input Bias Current  
Input Offset Voltage  
Input Offset Current  
RMS Output Power  
VS = ±22V  
VS = ±22V  
VS = ±22V  
0.1  
0.5  
±15  
µA  
mV  
nA  
VOS  
IOS  
PO  
±200  
d = 0.5%  
RL = 4Ω  
RL = 8Ω  
24  
22  
28  
18  
25  
W
W
W
V
S = ±22V RL = 8Ω  
d = 10%  
RL = 4Ω  
RL = 8Ω  
35  
22  
32  
W
W
W
V
S = ±22V RL = 8Ω  
d = 10%; T = 1s  
S = ±22.5V; RL = 4Ω  
Music Power  
IEC268.3 RULES  
V
50  
W
d
Total Harmonic Distortion  
RL = 4Ω  
f = 1kHz, PO = 0.1 to 24W  
f = 100Hz to 10kHz, PO = 0.1 to 18W  
0.03  
0.5  
0.5  
%
%
VS = ±22V RL = 8Ω  
f = 1kHz, PO = 0.1 to 20W  
f = 100Hz to 10kHz, PO = 0.1 to 15W  
0.02  
%
%
0.5  
SR  
GV  
GV  
BW  
eN  
Slew Rate  
5
8
80  
V/µs  
dB  
Open Loop Voltage Gain  
Closed Loop Voltage Gain  
Power Bandwidth (-3dB)  
Total Input Noise  
30  
30.5  
31  
10  
dB  
RL = 4Vi = 200mV  
20 to 80,000  
Hz  
curve A  
B = 22Hz to 22kHz  
4
5
µV  
µV  
Ri  
Input Resistance (pin 1)  
Supply Voltage Rejection  
500  
kΩ  
SVR  
Rs = 22k; f = 100Hz;  
V
ripple = 0.5Vrms  
45  
65  
dB  
%
η
Efficiency  
PO = 28W; RL = 4Ω  
PO = 25W; RL = 8;  
V
S = ±22V  
67  
%
Tsd-j  
Thermal Shut-down  
150  
°C  
Junction Temperature  
3/13  
TDA2050  
Figure 1: Split Supply Typical Application Circuit  
Figure 2: P.C. Board and ComponentsLayout of the Circuit of Fig. 1 (1:1)  
TDA2050  
RL  
R4  
R3  
R2  
+Vs  
C7  
C5  
C2  
C3  
R1  
C4  
C6  
C1  
-Vs  
Vi  
4/13  
TDA2050  
of fig. 2. Different values can be used. The follow-  
ing table can help the designer.  
SPLIT SUPPLY APPLICATION SUGGESTIONS  
The recommended values of the external compo-  
nents are those shown on the application circuit  
Recommended  
Larger than  
Recommended Value  
Smaller than  
Recommended Value  
Component  
Purpose  
Value  
R1  
22kΩ  
Input Impedance  
Increase of Input  
Impedance  
Decrease of Input  
Impedance  
R2  
R3  
R4  
C1  
680Ω  
22kΩ  
2.2Ω  
1µF  
Feedback Resistor  
Decrease of Gain (*)  
Increase of Gain  
Increase of Gain  
Decrease of Gain (*)  
Frequency Stability  
Input Decoupling DC  
Danger of Oscillations  
Higher Low-frequency  
cut-off  
C2  
22µF  
100nF  
220µF  
0.47µF  
Inverting Input  
DC Decoupling  
Increase of Switch  
ON/OFF Noise  
Higher Low-frequency  
cut-off  
C3  
C4  
Supply Voltage Bypass  
Supply Voltage Bypass  
Frequency Stability  
Danger of Oscillations  
Danger of Oscillations  
Danger of Oscillations  
C5  
C6  
C7  
(*) The gain must be higher than 24dB  
ground points of input 1 and input 2 must be well  
decoupled from the ground return of the output in  
which a high current flows.  
PRINTED CIRCUIT BOARD  
The layout shown in fig. 2 should be adopted by  
the designers. If different layouts are used, the  
5/13  
TDA2050  
Figure 3: Single Supply Typical Application Circuit  
Figure 4: P.C. Board and ComponentsLayout of the Circuit of Fig. 3 (1:1)  
6/13  
TDA2050  
SINGLE SUPPLY APPLICATION SUGGESTIONS  
of fig. 3. Different values can be used. The follow-  
ing table can help the designer.  
The recommended values of the external compo-  
nents are those shown on the application circuit  
Recommended  
Larger than  
Recommended Value  
Smaller than  
Recommended Value  
Component  
Purpose  
Biasing Resistor  
Value  
22kΩ  
22kΩ  
680Ω  
2.2Ω  
R1, R2, R3  
R4  
R5  
R6  
C1  
Increase of Gain  
Decrease of Gain (*)  
Increase of Gain  
Feedback Resistors  
Decrease of Gain (*)  
Danger of Oscillations  
Frequency Stability  
Input Decoupling DC  
2.2µF  
Higher Low-frequency  
cut-off  
C2  
C3  
100µF  
Supply Voltage Rejection  
Supply Voltage Bypass  
Worse Turn-off Transient  
Worse Turn-on Delay  
1000µF  
Danger of Oscillations  
Worse of Turn-off  
Transient  
C4  
22µF  
Inverting Input DC  
Decoupling  
Increase of Switching  
ON/OFF  
Higher Low-frequency  
cut-off  
C5  
C6  
C7  
100nF  
0.47µF  
1000µF  
Supply Voltage Bypass  
Frequency Stability  
Danger of Oscillations  
Danger of Oscillations  
Output DC Decoupling  
Higher Low-frequency  
cut-off  
(*) The gain must be higher than 24dB  
be used (i.e. 22µF).  
NOTE  
C7 can be larger than 1000uF only if the supply  
voltage does not exceed 40V.  
If the supply voltage is lower than 40V and the  
load is 8ohm (or more) a lower value of C2 can  
TYPICAL CHARACTERISTICS (Split Supply Test Circuit unless otherwise specified)  
Figure 5: Output Power vs. Supply Voltage  
Figure 6: Distortion vs. Output Power  
7/13  
TDA2050  
Figure 8: Distortion vs. Output Power  
Figure 7: Output Power vs. Supply Voltage  
Figure 10: Distortion vs. Frequency  
Figure. 9: Distortion vs. Frequency  
Figure 12: SupplyVoltageRejection vs.Frequency  
Figure 11: QuiescentCurrent vs. Supply Voltage  
8/13  
TDA2050  
Figure 13: SupplyVoltage Rejection vs. Fre-  
quency (Single supply) for Different  
values of C2 (circuit of fig. 3)  
Figure 16: Total Power Dissipation and Effi-  
ciency vs. Output Power  
Figure 14: SupplyVoltage Rejection vs. Fre-  
quency (Single supply) for Different  
values of C2 (circuit of fig. 3)  
SHORT CIRCUIT PROTECTION  
The TDA 2050 has an original circuit which limits  
the current of the output transistors. The maxi-  
mum output current is a function of the collector  
emitter voltage; hence the output transistors work  
within their safe operating area. This function can  
therefore be considered as being peak power lim-  
iting rather than simple current limiting.  
It reduces the possibility that the device gets  
damaged during an accidental short circuit from  
AC output to ground.  
THERMAL SHUTDOWN  
The presence of a thermal limiting circuit offers  
the following advantages:  
Figure 15: Total Power Dissipation and Effi-  
ciency vs. Output Power  
1)An overload on the output (even if it is perma-  
nent), or an above limit ambient temperature  
can be easily tolerated since the Tj cannot be  
higher than 150°C.  
2)The heatsink can have a smaller factor of  
safety compared with that of a conventional  
circuit. There is no possibility of device dam-  
age due to high junction temperature. If for  
any reason, the junction temperature in-  
creases up to 150°C, the thermal shutdown  
simply reduces the power dissipation and the  
current consumption.  
The maximum allowable power dissipation de-  
pends upon the thermal resistance junction-ambi-  
9/13  
TDA2050  
ent. Fig. 17 shows this dissipable power as a  
function of ambient temperature for different ther-  
mal resistance.  
cient. Between the heatsink and the package is  
better to insert a layer of silicon grease, to opti-  
mize the thermal contact; no electrical isolation is  
needed between the two surfaces. Fig. 18 shows  
an example of heatsink.  
Figure 17: Maximum Allowable Power Dissipa-  
tion vs. Ambient Temperature  
Dimension suggestion  
The following table shows the length that the  
heatsink in fig. 18 must have for several values  
of Ptot and Rth.  
Ptot (W)  
12  
60  
8
6
Lenght of heatsink (mm)  
Rth of heatsink (°C/W)  
40  
6.2  
30  
8.3  
4.2  
Figure 18: Example of heat-sink  
MOUNTING INSTRUCTIONS  
The power dissipated in the circuit must be re-  
moved by adding an external heatsink.  
Thanks to the PENTAWATT package, the  
heatsink mounting operation is very simple, a  
screw or a compression spring (clip) being suffi-  
APPENDIX A  
A.1 - MUSIC POWER CONCEPT  
The target of this method is to avoid excessive  
dissipation in the amplifier.  
MUSIC POWER is (according to the IEC clauses  
n.268-3 of Jan 83) the maximum power which the  
amplifier is capable of producing across the rated  
load resistance (regardless of non linearity) 1 sec  
after the application of a sinusoidal input signal of  
frequency1 KHz.  
A.2 - INSTANTANEOUS POWER  
Another power measurement (MAXIMUM IN-  
STANTANEOUS OUTPUT POWER) was pro-  
posed by IEC in 1988 (IEC publication 268-3 sub-  
clause 19.A).  
We give here only a brief extract of the concept,  
and a circuit useful for the measurement.  
According to this definition our method of meas-  
urement comprises the following steps:  
- Set the voltage supply at the maximum oper-  
ating value;  
The supply voltage is set at the maximum operat-  
ing value.  
- Apply a input signal in the form of a 1KHz tone  
burst of 1 sec duration: the repetition period  
of the signal pulses is 60 sec;  
The test signal consists of a sinusoidal signal  
whose frequency is 20 Hz, to which are added al-  
ternate positive and negative pulses of 50 µs du-  
ration and 500 Hz repetition rate. The amplitude  
of the 20 Hz signal is chosen to drive the amplifier  
to its voltage clipping limits, while the amplitude of  
the pulses takes the amplifier alternately into its  
current-overload limits.  
- The output voltage is measured 1 sec from the  
start of the pulse;  
- Increase the input voltage until the output sig-  
nal shows a THD=10%;  
- The music power is then V2  
/RL, where  
out  
Vout is the output voltage measured in the  
condition of point 4 and RL is the rated load  
impedance;  
10/13  
TDA2050  
power of the amplifier, because the duty-cycle of  
the high output current is low.  
A circuit for generating the test signal is given in  
fig. 19.  
By feeding the amplifier output voltage to the X-  
plates of an oscilloscope, and the voltage across  
the 1 ohm resistor (representing the output cur-  
rent) to the Y=plates, it is possible to read on the  
display the value of the maximum instantaneous  
output power.  
The load network consists of a 40 µF capacitor, in  
series with a 1 ohm resistor. The capacitor limits  
the current due to the 20 Hz signal to a low value,  
whereas for he short pulses the effective load im-  
pedance is of the order of 1 ohm, and a high out-  
put current is produced.  
Using this signal and load network the measure-  
ment may be made without causing excessive  
dissipation in the amplifier. The dissipation in the  
1 ohm resistor is much lower than a rated output  
The result of this test applied at the TDA 2050 is:  
PEAK POWER = 100W typ  
Figure 19: Test circuit for peak power measurement  
11/13  
TDA2050  
PENTAWATT PACKAGE MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
4.8  
MIN.  
MAX.  
0.189  
0.054  
0.110  
0.053  
0.022  
0.041  
0.055  
0.142  
0.276  
0.409  
0.409  
A
C
1.37  
2.8  
D
2.4  
1.2  
0.35  
0.8  
1
0.094  
0.047  
0.014  
0.031  
0.039  
0.126  
0.260  
D1  
E
1.35  
0.55  
1.05  
1.4  
F
F1  
G
3.4  
6.8  
0.134  
0.268  
G1  
H2  
H3  
L
10.4  
10.4  
10.05  
0.396  
17.85  
15.75  
21.4  
0.703  
0.620  
0.843  
0.886  
L1  
L2  
L3  
L5  
L6  
L7  
M
22.5  
2.6  
15.1  
6
3
0.102  
0.594  
0.236  
0.118  
0.622  
0.260  
15.8  
6.6  
4.5  
4
0.177  
0.157  
M1  
Dia  
3.65  
3.85  
0.144  
0.152  
L
L1  
L2  
L3  
L5  
Dia.  
L7  
L6  
12/13  
TDA2050  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No  
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications men-  
tioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without ex-  
press written approval of SGS-THOMSON Microelectronics.  
1994 SGS-THOMSON Microelectronics - All RightsReserved  
PENTAWATT is a Registered Trademark of SGS-THOMSON Microelectronics  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore -  
Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.  
13/13  

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