T835T-6I [STMICROELECTRONICS]
Snubberlessâ¢, logic level and standard 8 A Triacs; Snubberlessâ ?? ¢ ，逻辑层次和水平8的三端双向可控硅
| 型号： | T835T-6I |
| 厂家： | 
ST |
| 描述： | Snubberlessâ¢, logic level and standard 8 A Triacs |
| 文件： | 总9页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T8T
Snubberless™, logic level and standard 8 A Triacs
Features
A2
■ Medium current Triac
■ High static and dynamic commutation
■ Low thermal resistance with clip bonding
■ Packages is RoHS (2002/95/EC) compliant
G
A1
■ 600 V V
RM
■ UL certified (ref. file E81734)
A1
A2
G
Applications
TO-220AB insulated
(T8xxT-6I)
■ Value sensitive application
■ General purpose ac line load switching
■ Motor control circuits in power tools
■ Small home appliances, lighting
■ Inrush current limiting circuits
■ Overvoltage crowbar protection
Table 1.
Device summary
Order code
Symbol
Value
IGT 3Q
logic level
T810T-6I
10 mA
T820T-6I
T835T-6I
IGT 3Q
Snubberless
20 / 35 mA
25 mA
Description
Available in through-hole, the T8T series of Triacs
can be used as on/off or phase angle control
function in general purpose ac switching where
high commutation capability is required.
IGT 4Q
standard
T825T-6I
This series can be designed-in in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
TM: Snubberless is a trademark of STMicroelectronics
September 2011
Doc ID 16192 Rev 3
1/9
www.st.com
9
Characteristics
T8T
1
Characteristics
Table 2.
Symbol
Absolute ratings (limiting values; T = 25 °C, unless otherwise specified)
j
Parameter
Value
Unit
IT(RMS) On-state rms current (full sine wave)
Tc = 97 °C
tp = 20 ms
tp = 16.7 ms
tp = 10 ms
8
A
A
F = 50 Hz
F = 60 Hz
60
63
26
Non repetitive surge peak on-state current
(full cycle, Tj initial = 25 °C)
ITSM
²
²
²
I t
I t Value for fusing
A s
Critical rate of rise of on-state current IG = 2 x IGT
tr ≤ 100 ns
dI/dt
F = 60 Hz
Tj = 125 °C
Tj = 25 °C
50
A/µs
V
VDSM
/
Non repetitive surge peak off-state
VRSM voltage
VDRM/VRRM
+ 100
tp = 10 ms
tp = 20 µs
IGM
Peak gate current
Tj = 125 °C
Tj = 125 °C
4
A
PG(AV) Average gate power dissipation
1
W
°C
°C
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
2/9
Doc ID 16192 Rev 3
T8T
Characteristics
Unit
Table 3.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
T8xxT
Test conditions
Quadrant
T810T T820T T825T T835T
I - II - III
IV
10
20
25
40
35
(1)
IGT
VD = 12 V, RL = 30 Ω
MAX.
MAX.
mA
V
VD = VDRM, RL = 30 Ω,
Tj = 25 °C
VGT
ALL
ALL
1.3
0.2
VD = VDRM, RL = 3.3 kΩ,
Tj = 125 °C
VGD
MIN.
V
(2)
IH
IT = 500 mA
MAX.
15
20
25
35
30
40
40
50
mA
I - III
IL
IG = 1.2 IGT
IV
II
MAX.
MIN.
40
mA
25
100
50
5.4
2
40
70
70
Tj = 125 °C
Tj = 150 °C(3)
750
500
500
300
2000
1000
dV/dt (2) VD = 67% VDRM, gate open
V/µs
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
Tj = 125 °C
4.5
2
Without snubber
(di/dt)c (2)
3.4
2
8
MIN.
A/ms
(dV/dt)c = 0.1 V/µs
2.5
1
Tj = 150 °C(3)
(dV/dt)c = 10 V/µs
Without snubber
6.5
1. Minimum I
is guaranted at 5% of I
max.
GT
GT
2. For both polarities of A2 referenced to A1.
3. Derating information for excess temperature above Tj max.
Table 4.
Symbol
Static characteristics
Test conditions
Value
Unit
(1)
VT
ITM = 11.3 A, tp = 380 µs
Threshold voltage
Tj = 25 °C
MAX.
1.60
0.87
60
V
V
(1)
VTO
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
MAX.
MAX.
(1)
RD
Dynamic resistance
mΩ
µA
5
VDRM = VRRM
MAX.
TYP.
IDRM
IRRM
Tj = 125 °C
Tj = 150 °C(2)
1
mA
VD = 0.9 x VDRM
1.9
1. For both polarities of A2 referenced to A1.
2. Derating information for excess temperature above Tj max.
Doc ID 16192 Rev 3
3/9
Characteristics
T8T
Table 5.
Symbol
Thermal resistance
Parameter
Value
Unit
Rth(j-c) Junction to case (AC)
2.8
60
°C/W
°C/W
Rth(j-a) Junction to ambient (DC)
Figure 1.
Maximum power dissipation versus Figure 2.
rms on-state current
On-state rms current versus case
temperature
P(W)
10
I
(A)
T(RMS)
10
9
9
α = 180°
α = 180°
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
180°
1
I
(A)
T (°C)
C
T(RMS)
0
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
Figure 3.
On-state rms current versus
ambient temperature
Figure 4.
Relative variation of thermal
impedance versus pulse duration
(free air convection)
I
(A)
K = [Z / R
th
]
T(RMS)
th
1.0E+00
1.0E-01
1.0E-02
2.5
2.0
1.5
1.0
0.5
Z
th(j-c)
Z
α = 180°
th(j-a)
TO-220AB
TO-220AB
T
(s)
T (°C)
p
a
0.0
0
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
25
50
75
100
125
Figure 5.
On-state characteristics
(maximum values)
Figure 6.
Surge peak on state current versus
number of cycles
I
(A)
I
(A)
TM
TSM
100
10
1
70
60
50
40
30
20
10
0
t = 20 ms
Non repetitive
One cycle
T initial = 25 °C
j
Repetitive
= 97 °C
T
c
T max:
j
V
R
= 0.87 V
=6 0 mΩ
to
Number of cycles
d
V
(V)
TM
1
1000
0
2
3
4
5
1
10
100
4/9
Doc ID 16192 Rev 3
T8T
Characteristics
Figure 7.
Non repetitive surge peak on-state Figure 8.
current for a sinusoidal
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
I
, V [T ] / I , V [T = 25 °C]
GT GT
j
GT GT
j
I
(A), I²t (A²s)
TSM
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
typical values
T initial = 25 °C
j
I
Q3
GT
I
Q1-Q2
GT
I
TSM
dl /dt limitation: 50 A / µs
100
I
Q1-Q2-Q3
GT
I²t
t (ms)
p
T (°C)
pulse with width tp<10 ms, and corresponding value of I²t
j
10
0.01
0.10
1.00
10.00
-50
-25
0
25
50
75
100
125
Figure 9.
Relative variation of holding
current and latching current versus
junction temperature
Figure 10. Relative variation of static dV/dt
immunity versus junction
temperature
I
, I [T ] / I , I [T = 25 °C]
H
L
j
H L j
dV / dt [T ] / dV / dt [T = 125 °C]
j
j
2.0
1.5
1.0
0.5
0.0
7
6
5
4
3
2
1
0
typical values
V
= V = 402 V
R
D
I
L
I
H
T (°C)
T (°C)
j
j
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Figure 11. Relative variation of critical rate of Figure 12. Relative variation of leakage
decrease of main current versus
junction temperature
current versus junction
temperature
I
/I
[T ;V
/ V ] / I /I
DRM RRM
j
DRM RRM DRM RRM
(dl / dt) [T ] / (dl / dt) [T = 125 °C]
c
j
c
j
[T = 125 °C; 600 V]
j
6
5
4
3
2
1
0
1.0E+00
1.0E-01
1.0E-02
1.0E-03
V
= V
= 600 V
RRM
DRM
V
= V
= 400 V
RRM
DRM
V
= V
= 200 V
RRM
DRM
for different values of blocking voltage
T (°C)
j
T (°C)
j
25
50
75
100
125
25
50
75
100
125
Doc ID 16192 Rev 3
5/9
Ordering information scheme
T8T
2
Ordering information scheme
Figure 13. Ordering information scheme
T
8
10
T
-
6
I
TRIAC
Current
8 = 8 A
Sensitivity
10 = 10 mA
20 = 20 mA
25 = 25 mA
35 = 35 mA
Application specific
Voltage
6 = 600 V
Package
I = TO-220AB-Ins.
6/9
Doc ID 16192 Rev 3
T8T
Package mechanical data
3
Package mechanical data
●
●
Epoxy meets UL94, V0
Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
Table 6.
TO-220AB Insulated dimensions
Dimensions
Millimeters
Min. Typ. Max. Min. Typ. Max.
Ref.
Inches
A
15.20
15.90 0.598
0.625
a1
3.75
0.147
C
B
a2 13.00
10.00
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
Ø I
b2
B
L
F
b1 0.61
b2 1.23
A
I4
C
4.40
l3
c1 0.49
c2 2.40
c2
a1
l2
a2
e
F
2.40
6.20
M
c1
b1
ØI 3.75
e
I4 15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
l2
l3
M
2.60
0.102
Doc ID 16192 Rev 3
7/9
Ordering information
T8T
4
Ordering information
Table 7.
Order code
T810T-6I
Ordering information
Marking
Package
Weight
Base qty Delivery mode
T810T-6I
T820T-6I
T825T-6I
T835T-6I
T820T-6I
T825T-6I
T835T-6I
TO-220AB-Ins.
2.3 g
50
Tube
5
Revision history
Table 8.
Date
Document revision history
Revision
Changes
10-Sep-2009
18-Jan-2010
20-Sep-2011
1
2
3
First issue.
Updated pag.1.
Updated: Features.
8/9
Doc ID 16192 Rev 3
T8T
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Doc ID 16192 Rev 3
9/9
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