T835-XXXB [STMICROELECTRONICS]
HIGH PERFORMANCE TRIACS; 高性能双向可控硅
| 型号： | T835-XXXB |
| 厂家： | 
ST |
| 描述： | HIGH PERFORMANCE TRIACS |
| 文件： | 总5页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T810-xxxB
T835-xxxB
®
HIGH PERFORMANCE TRIACS
FEATURES
ITRMS = 8 A
SENSITIVE GATE : IGT ≤ 10mA and 35mA
HIGH COMMUTATION TECHNOLOGY
HIGH ITSM CAPABILITY
A2
G
DESCRIPTION
A2
The T810-xxxB and T835-xxxB series are using
high performance TOPGLASS PNPN technology.
These devices are intented for AC control applica-
tions, using surface mount technology where high
commutating and surge performances are re-
quired (like power tools, Solid State Relay).
A1
DPAK
(Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IT(RMS)
Tc =110 °C
8
A
RMS on-state current
(360° conduction angle)
ITSM
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
85
80
32
20
A
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2t
A2s
I2t value for fusing
dI/dt
Repetitive
F = 50 Hz
A/µs
Critical rate of rise of on-state current
IG = 50mA diG/dt = 0.1A/µs
Non
100
Repetitive
Tstg
Tj
- 40 to + 150
- 40 to + 125
°C
°C
Storage temperature range
Operating junction temperature range
T
260
°C
Maximum temperature for soldering during 10 s
Symbol
Parameter
T810-/T835-
Unit
400B
400
600B
600
VDRM
VRRM
V
Repetitive peak off-state voltage
Tj = 125 °C
1/5
May 1998 Ed : 1A
T810-xxxB / T835-xxxB
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-c)
2.1
°C/W
Junction to case for DC
Rth (j-c)
Rth (j-a)
1.6
70
°C/W
°C/W
Junction to case for AC 360° conduction angle ( F= 50 Hz)
Junction to ambient (S = 0.5 cm2)
GATE CHARACTERISTICS (maximum values)
PG(AV) = 1 W PGM= 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
Unit
T810
T835
IGT
VGT
VGD
IL
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
I-II-III
I-II-III
I-II-III
I-II-III
MAX
MAX
MIN
10
35
mA
V
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
IG=1.2 IGT
1.3
0.2
V
MAX
MAX
MAX
MAX
MAX
MIN
25
15
60
35
mA
mA
V
IH
*
IT= 100mA gate open
VTM
*
1.5
10
2
I
TM= 11A tp= 380µs
IDRM
IRRM
µA
mA
V/µs
VDRM Rated
VRRM Rated
dV/dt *
50
500
Linear slope up to
VD=67%VDRM
gate open
(dI/dt)c *
Tj=125°C
Tj=125°C
MIN
MIN
5.4
2.7
9
A/ms
A/ms
(dV/dt)c = 0.1V/µs
4.5
(dV/dt)c = 15V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment
T 8 10 - 600 B
TRIAC
VOLTAGE
PACKAGE
B = DPAK
CURRENT
SENSITIVITY
2/5
T810-xxxB / T835-xxxB
Fig 1a: Maximum power dissipation versus RMS
on-state current (T810 only).
Fig 1b: Maximum power dissipation versus RMS
on-state current. (T835 only)
P(W)
10
P(W)
10
α
α
8
8
α
α
α
α
6
6
α
α
4
4
180°
α
180°
α
α
α
α
2
2
α
I
T(RMS)(A)
I
T(RMS)(A)
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Fig 2: Correlation between maximum power dissi-
pation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink+contact.
Fig 3: RMS on-state current versus ambient tem-
perature.
I
T(RMS)(A)
Tcase (°C)
9
8
7
6
5
4
3
2
1
0
P(W)
10
110
Rth=5°C/W
Rth=10 °C/W
8
6
4
2
0
Rth=0°C/W
α
115
120
Rth=15 °C/W
α
Tamb(°C)
50
Tamb(°C)
25
125
0
25
75
100
125
0
50
75
100
125
Fig 4: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature (typi-
cal values).
I
GT,IH[Tj]/IGT,IH[Tj=25°C]
K=[Zth(j-c)/Rth(j-c)]
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.5
0.2
I
GT
I
H
Tj(°C)
20 40
tp(s)
0.1
1E-3
1E-2
1E-1
1E+0
-40 -20
0
60
80 100 120 140
3/5
T810-xxxB / T835-xxxB
Fig 6: Non repetitive surge peak on-state current
versus number of cycles.
Fig 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I2t.
I
TSM(A),I²t(A²s)
I
TSM(A)
500
100
80
70
60
50
40
30
20
10
0
Tj initial=25°C
F=50Hz
Tj initial=25°C
ITSM
I²t
Number of cycles
10 100
tp(ms)
10
1
1000
1
2
5
10
Fig 8: On-state characteristics (maximum values).
Fig 9: Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm).
I
TM(A)
Rth(j-a) (°C/W)
100.0
10.0
1.0
100
Tj max.:
Vto=0.8V
Rt=60mΩ
80
60
40
Tj=Tj max.
Tj=25°C
20
S(Cu) (cm²)
V
TM(V)
0
0.1
0
2
4
6
8
10 12 14 16 18 20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
4/5
T810-xxxB / T835-xxxB
PACKAGE MECHANICAL DATA
DPAK Plastic
REF.
A
DIMENSIONS
Millimeters
Inches
Min. Typ. Max Min. Typ. Max.
E
A
2.20
2.40 0.086
1.10 0.035
0.23 0.001
0.90 0.025
5.40 0.204
0.60 0.017
0.60 0.018
6.20 0.236
6.60 0.251
4.60 0.173
10.10 0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
B2
C2
A1 0.90
A2 0.03
L2
B
0.64
B2 5.20
0.45
C2 0.48
D
H
C
L4
D
E
6.00
6.40
4.40
9.35
A1
B
G
C
G
H
A2
L2
0.80
0.031
0.60 MIN.
L4 0.60
V2 0°
1.00 0.023
0.039
8°
8°
0°
V2
FOOT PRINT (millimeters)
WEIGHT : 0.30g
6.7
MARKING
TYPE
MARKING
6.7
T8
1040
T810-400B
6.7
3
T8
T810-600B
T835-400B
T835-600B
1060
T8
3540
1.6
1.6
T8
3560
2.3 2.3
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
© 1998 STMicroelectronics - Printed in Italy - All rights reserved.
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