STX3N4 [STMICROELECTRONICS]
3000mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT PACKAGE-3;
| 型号： | STX3N4 |
| 厂家： | 
ST |
| 描述： | 3000mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT PACKAGE-3 开关 晶体管 |
| 文件： | 总8页 (文件大小：484K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STX3N4
Medium voltage fast-switching NPN power transistor
Features
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
Application
■ Electronic ballast for fluorescent lighting
Description
TO-92
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
Figure 1.
Internal schematic diagram
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STX3P3, its
complementary PNP transistor.
Table 1.
Order code
STX3N4
Device summary
Marking
Package
Packing
X3N4
TO-92
Bag
October 2009
Doc ID 16301 Rev 1
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www.st.com
8
Electrical ratings
STX3N4
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VCES
VCEO
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
400
200
V
V
Emitter-base voltage
VEBO
V(BR)EBO
V
(IC = 0, IB = 1.5 A, tp < 100 µs, TJ < 150 °C)
IC
ICM
IB
Collector current
3
A
A
Collector peak current (tP < 5 ms)
Base current
6
1.5
A
IBM
PTOT
TSTG
TJ
Base peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
3
A
1.5
W
°C
°C
-65 to 150
150
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
RthJC
Thermal resistance junction-case
_max
83.3
°C/W
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STX3N4
Electrical characteristics
2
Electrical characteristics
T
= 25°C unless otherwise specified
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
CE = 400 V
Min. Typ. Max. Unit
Collector cut-off current
(VBE = 0)
V
0.1
0.5
mA
mA
ICES
VCE = 400 V
TC = 125 °C
Emitter-base breakdown
voltage (IC = 0)
V(BR)EBO
IE = 10 mA
9
18
V
Collector-emitter
sustaining voltage
(1)
VCEO(sus)
IC = 10 mA
200
V
(IB = 0)
IC = 0.7 A _ IB = 0.1 A
IC = 1 A _ IB = 0.2 A
0.4
0.5
V
V
Collector-emitter
saturation voltage
(1)
VCE(sat)
IC = 0.5 A__ IB = 0.1 A
IC = 1 A ____ IB = 0.2 A
IC = 2 A ____ IB = 0.4 A
1
V
V
V
Base-emitter saturation
voltage
(1)
VBE(sat)
1.1
1.3
IC = 10 mA
IC = 0.75 A
IC = 2 A
VCE = 5 V
VCE = 5 V
VCE = 5 V
10
22
4
hFE
DC current gain
28
36
Resistive load
Rise time
80
1.2
100
ns
µs
ns
tr
ts
tf
IC = 0.7 A _ VCC = 150 V
IB(on) = - IB(off) = 140 mA
Tp = 30 µs
1.6
Storage time
Fall time
130
Inductive load
Storage time
Fall time
IC = 1 A _ _ IB(on) = 100 mA
VBE(off) = - 5 V RBB = 0
Vclamp = 150 V L = 1 mH
ts
tf
120
50
200
90
ns
ns
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
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Electrical characteristics
STX3N4
2.1
Test circuits
Figure 2.
Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
Figure 3.
Inductive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
3. Fast recovery rectifier
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STX3N4
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
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Package mechanical data
STX3N4
TO-92 bulk shipment mechanical data
mm.
DIM.
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
TYP
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
A
b
D
E
e
e1
L
R
S1
W
V
o
5
0102782 D
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STX3N4
Revision history
4
Revision history
Table 5.
Date
01-Oct-2009
Document revision history
Revision
Changes
1
Initial release.
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STX3N4
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