STW88N65M5 [STMICROELECTRONICS]
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh⢠V Power MOSFET in TO-247 and TO-247 long leads packages; N沟道650 V， 0.024 I© （典型值） ， 84 A， MDmeshâ ?? ¢采用TO- 247和TO- 247长引线封装V功率MOSFET
| 型号： | STW88N65M5 |
| 厂家： | 
ST |
| 描述： | N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh⢠V Power MOSFET in TO-247 and TO-247 long leads packages |
| 文件： | 总15页 (文件大小：1206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW88N65M5
STWA88N65M5
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ V
Power MOSFET in TO-247 and TO-247 long leads packages
Datasheet
-
production data
Features
VDSS
@Tjmax.
Order codes
RDS(on) max.
ID
STW88N65M5
STWA88N65M5
710 V
< 0.029 Ω
84 A
3
• Worldwide best RDS(on) in TO-247
• Higher VDSS rating
2
1
TO-247
TO-247 long leads
• Higher dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
Figure 1. Internal schematic diagram
Applications
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• High efficiency switching applications:
– Servers
– PV inverters
– Telecom infrastructure
– Multi kW battery chargers
*ꢅꢁꢇ
Description
6ꢅꢈꢇ
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
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resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STW88N65M5
STWA88N65M5
TO-247
88N65M5
Tube
TO-247 long leads
April 2013
DocID022522 Rev 4
1/15
This is information on a product in full production.
www.st.com
15
Contents
STW88N65M5, STWA88N65M5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
DocID022522 Rev 4
STW88N65M5, STWA88N65M5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
VGS
ID
Gate- source voltage
±25
84
V
A
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
ID
50.5
336
450
A
(1)
IDM
A
PTOT Total dissipation at TC = 25 °C
W
Max current during repetitive or single pulse avalanche
IAR
15
A
(pulse width limited by TJMAX
)
Single pulse avalanche energy
EAS
2000
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
dv/dt (2) Peak diode recovery voltage slope
15
- 55 to 150
150
V/ns
°C
Tstg
Tj
Storage temperature
Max. operating junction temperature
°C
1. Pulse width limited by safe operating area
2. ≤ 84 A, di/dt = 400 A/µs, peak V < V , V = 400 V
(BR)DSS DD
I
SD
DS
Table 3. Thermal data
Parameter
Symbol
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
0.28
50
°C/W
°C/W
°C
Tl
Maximum lead temperature for soldering purpose
300
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3/15
Electrical characteristics
STW88N65M5, STWA88N65M5
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V(BR)DSS
ID = 1 mA, VGS = 0
VDS = 650 V
650
V
breakdown voltage
Zero gate voltage
1
µA
µA
IDSS
drain current (VGS = 0) VDS = 650 V, TC=125 °C
100
Gate-body leakage
VGS = ± 25 V
IGSS
± 100 nA
current (VDS = 0)
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
3
4
5
V
Static drain-source on
V
GS = 10 V, ID = 42 A
0.024 0.029
Ω
resistance
Table 5. Dynamic
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
Input capacitance
Ciss
Coss
Crss
8825
223
11
pF
V
V
DS = 100 V, f = 1 MHz,
GS = 0
Output capacitance
-
-
-
pF
pF
Reverse transfer
capacitance
Equivalent
capacitance time
related
(1)
Co(tr)
VGS = 0, VDS = 0 to 520 V
-
778
pF
Equivalent
capacitance energy
related
(2)
Co(er)
VGS = 0, VDS = 0 to 520 V
f = 1 MHz open drain
-
-
202
-
-
pF
Intrinsic gate
resistance
RG
1.79
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 42 A,
VGS = 10 V
204
51
nC
nC
nC
-
-
(see Figure 16)
84
1.
2.
C
is a constant capacitance value that gives the same charging time as C
while V is rising from 0
oss DS
o(tr)
to 80% V
.
DSS
C
is a constant capacitance value that gives the same stored energy as C
while V is rising from 0
oss DS
o(er)
to 80% V
.
DSS
4/15
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STW88N65M5, STWA88N65M5
Electrical characteristics
Min. Typ. Max. Unit
Table 6. Switching times
Test conditions
Symbol
Parameter
td(V)
tr(V)
tf(i)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 56 A,
141
16
ns
ns
ns
ns
RG = 4.7 Ω, VGS = 10 V
-
-
(see Figure 17)
29
tc(off)
(see Figure 20)
56
Table 7. Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
ISD
Source-drain current
84
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
336
(2)
VSD
Forward on voltage
ISD = 84 A, VGS = 0
SD = 84 A,
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
544
14
ns
µC
A
I
di/dt = 100 A/µs
Qrr
-
-
VDD = 100 V (see Figure 17)
IRRM
50
I
SD = 84 A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
660
20
ns
µC
A
di/dt = 100 A/µs
Qrr
VDD = 100 V, Tj = 150 °C
(see Figure 17)
IRRM
60
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID022522 Rev 4
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Electrical characteristics
STW88N65M5, STWA88N65M5
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM10392v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
100
10µs
100µs
10
1ms
10ms
1
0.1
10
VDS(V)
0.1
1
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM10393v1
AM10394v1
I
D
(A)
I
D
(A)
V
DS=30V
225
V
GS=10V
250
200
200
175
150
125
100
8V
150
100
7V
75
50
50
0
6V
25
0
5
3
4
20
25
V
DS(V)
7
8
9
VGS(V)
0
10
15
5
6
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on resistance
AM10395v1
AM10396v1
V
(V)
GS
R
DS(on)
(Ω)
V
DS (V)
V
GS=10V
V
DD=520V
=42A
14
I
D
500
VDS
0.026
12
400
300
200
10
8
0.024
0.022
0.020
6
4
100
0
2
0
70 80
50 60
20 30 40
10
100
200
0
50
150
Q
g
(nC)
0
ID(A)
6/15
DocID022522 Rev 4
STW88N65M5, STWA88N65M5
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
AM10397v1
AM10398v1
E
(µJ)
oss
C
(pF)
40
100000
10000
35
30
Ciss
25
20
1000
100
Coss
Crss
15
10
10
1
5
0
0
0.1
100
200
400 500
600
1
10
V
DS(V)
100
300
VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on resistance vs
temperature
AM04972v1
AM05501v2
V
GS(th)
R
DS(on)
(norm)
(norm)
1.10
ID=250µA
2.1
I
D
= 42 A
1.9
1.7
V
GS= 10 V
1.00
0.90
1.5
1.3
1.1
0.9
0.80
0.70
0.7
0.5
-50
-25
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
TJ(°C)
125
100
100
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized VDS vs temperature
AM04974v1
AM10399v1
V
(V)
SD
VDS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.04
1.02
1.00
1.0
0.8
TJ=25°C
0.6
0.4
TJ=150°C
0.98
0.96
0.2
0
0.94
0.92
0
-50
-25
10
20
30
40
50 ISD(A)
0
25 50 75
TJ(°C)
100
DocID022522 Rev 4
7/15
Electrical characteristics
STW88N65M5, STWA88N65M5
Figure 14. Switching losses vs gate resistance
(1)
AM11171v1
E
(μJ)
Eon
VDD=400V
VGS=10V
TJ=25°C
ID=56A
3000
2000
1000
0
Eoff
20
30
40
10
RG(Ω)
0
1. Eon including reverse recovery of a SiC diode
8/15
DocID022522 Rev 4
STW88N65M5, STWA88N65M5
Test circuits
3
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
100nF
1kΩ
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
μF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
VDD
μF
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
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AM01472v1
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DocID022522 Rev 4
9/15
Package mechanical data
STW88N65M5, STWA88N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 8. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅P
∅R
S
3.55
4.50
5.30
3.65
5.50
5.70
10/15
DocID022522 Rev 4
STW88N65M5, STWA88N65M5
Package mechanical data
Figure 21. TO-247 drawing
0075325_G
DocID022522 Rev 4
11/15
Package mechanical data
STW88N65M5, STWA88N65M5
Table 9. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
D
4.90
1.85
0.55
1.07
1.90
2.87
5.15
2.10
0.67
1.32
2.38
3.38
E
F
F1
F2
G
10.90 BSC
H
15.77
20.82
4.16
16.02
21.07
4.47
L
L1
L2
L3
L4
L5
M
5.49
5.74
20.05
3.68
20.30
3.93
6.04
6.29
2.25
2.55
V
10°
3°
V1
V3
Dia.
20°
3.55
3.66
12/15
DocID022522 Rev 4
STW88N65M5, STWA88N65M5
Package mechanical data
Figure 22. TO-247 long leads drawing
7395426_G
DocID022522 Rev 4
13/15
Revision history
STW88N65M5, STWA88N65M5
5
Revision history
Table 10. Document revision history
Changes
Date
Revision
23-Nov-2011
09-Dec-2011
12-Jun-2012
1
2
3
First release.
Document status promoted from preliminary data to datasheet.
Updated title on the coverpage.
Added new part number: STWA88N65M5
30-Nov-2012
4
Updated: Section 4: Package mechanical data
14/15
DocID022522 Rev 4
STW88N65M5, STWA88N65M5
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