STW27NM60ND [STMICROELECTRONICS]
Automotive-grade N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh II Power MOSFET (with fast diode) in TO-247 package;
| 型号： | STW27NM60ND |
| 厂家： | 
ST |
| 描述： | Automotive-grade N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh II Power MOSFET (with fast diode) in TO-247 package 局域网 开关 脉冲 晶体管 |
| 文件： | 总19页 (文件大小：915K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB27NM60ND,
STW27NM60ND
Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II
Power MOSFETs (with fast diode) in D2PAK and TO-247 packages
Datasheet production data
-
Features
Order codes
VDS@ Tjmax RDS(on) max
650 V 0.16 Ω
ID
STB27NM60ND
STW27NM60ND
TAB
21 A
• Designed for automotive applications and
3
3
2
1
AEC-Q101 qualified
1
D2PAK
• The worldwide best RDS(on)*area amongst the
TO-247
fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Figure 1. Internal schematic diagram
• Extremely high dv/dt and avalanche
capabilities
$ꢅ4!"ꢆ ꢇꢈ
Applications
• Switching applications
'ꢅꢁꢈ
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
3ꢅꢉꢈ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STB27NM60ND
STW27NM60ND
27NM60ND
27NM60ND
D²PAK
Tape and reel
Tube
TO-247
October 2013
DocID15406 Rev 4
1/19
This is information on a product in full production.
www.st.com
Contents
STB27NM60ND, STW27NM60ND
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
DocID15406 Rev 4
STB27NM60ND, STW27NM60ND
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
VDS
VGS
ID
Drain-source voltage
600
25
V
V
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
21
A
ID
13
A
(1)
IDM
84
A
PTOT
dv/dt(2)
Tstg
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
Storage temperature
160
W
V/ns
°C
°C
40
–55 to 150
150
TJ
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ≤ 21 A, di/dt ≤ 600 A/µs, V = 80% V
(BR)DSS
I
SD
DD
Table 3. Thermal data
Parameter
Symbol
D²PAK
TO-247
Unit
Rthj-case
Rthj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-ambient max
0.78
°C/W
°C/W
°C/W
50
(1)
Rthj-pcb
30
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Avalanche characteristics
Symbol
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
IAS
10
A
Single pulse avalanche energy
EAS
850
mJ
(starting TJ = 25 °C, ID = IAS, VDD = 50 V)
DocID15406 Rev 4
3/19
19
Electrical characteristics
STB27NM60ND, STW27NM60ND
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified).
Table 5. On/off states
Value
Unit
Typ. Max.
Symbol
Parameter
Test conditions
Min.
Drain-source
V(BR)DSS
ID = 1 mA, VGS = 0
600
V
breakdown voltage
V
V
DD= 480 V, ID= 21 A,
GS= 10 V
dv/dt(1) Drain source voltage slope
48
V/ns
V
V
DS = 600 V
1
µA
µA
Zero gate voltage
IDSS
drain current (VGS = 0)
DS = 600 V @TC= 125 °C
100
Gate-body leakage
IGSS
VGS
=
20 V
100
nA
V
current (VDS = 0)
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 10.5 A
3
4
5
RDS(on) Static drain-source
on- resistance
0.13
0.16
Ω
1. Characteristic value at turn off on inductive load.
Table 6. Dynamic
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
(1)
gfs
Forward transconductance VDS = 15 V, ID = 10.5 A
Input capacitance
-
-
-
17
-
-
-
S
Ciss
2400
150
pF
pF
VDS = 50 V, f = 1 MHz,
GS = 0
Coss
Output capacitance
V
Reverse transfer
capacitance
Crss
-
-
15
-
-
pF
pF
Coss
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
VDD = 300 V, ID = 10.5 A
320
(2)
eq.
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
-
-
-
-
60
30
50
40
-
-
-
-
ns
ns
ns
ns
RG = 4.7 Ω VGS = 10 V
(see Figure 21),
Turn-off delay time
Fall time
(see Figure 16)
4/19
DocID15406 Rev 4
STB27NM60ND, STW27NM60ND
Electrical characteristics
Min. Typ. Max. Unit
Table 6. Dynamic (continued)
Parameter Test conditions
Symbol
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
-
-
-
80
15
40
-
-
-
nC
nC
nC
VDD = 480 V, ID = 21 A,
VGS = 10 V,
(see Figure 17)
f = 1 MHz, gate DC
Bias = 0,
Rg
Gate input resistance
-
1.6
-
Ω
test signal level = 20 mV,
ID = 0
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. . is defined as a constant equivalent capacitance giving the same charging time as C when V
DS
C
oss eq
oss
increases from 0 to 80% V
DSS
DocID15406 Rev 4
5/19
19
Electrical characteristics
Symbol
STB27NM60ND, STW27NM60ND
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
-
-
-
-
-
-
-
-
21
84
A
A
(1)
ISDM
Source-drain current (pulsed)
Forward on voltage
(2)
VSD
trr
ISD = 21 A, VGS = 0
1.3
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
160
1
ns
µC
A
ISD = 21 A, VDD = 60 V
di/dt=100 A/µs
Qrr
IRRM
trr
(see Figure 18)
15
230
2
ISD = 21 A,VDD = 60 V
di/dt=100 A/µs,
ns
µC
Qrr
TJ = 150 °C
IRRM
Reverse recovery current
-
19
A
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
6/19
DocID15406 Rev 4
STB27NM60ND, STW27NM60ND
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for D²PAK
Figure 4. Safe operating area for TO-247
Figure 6. Output characteristics
Figure 3. Thermal impedance for D²PAK
Figure 5. Thermal impedance for TO-247
Figure 7. Transfer characteristics
DocID15406 Rev 4
7/19
19
Electrical characteristics
STB27NM60ND, STW27NM60ND
Figure 8. Transconductance
Figure 9. Static drain-source on-resistance
Figure 10. Gate charge vs gate-source voltage
Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs
temperature
Figure 13. Normalized on-resistance vs
temperature
8/19
DocID15406 Rev 4
STB27NM60ND, STW27NM60ND
Electrical characteristics
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized V(BR)DSS vs temperature
DocID15406 Rev 4
9/19
19
Test circuits
STB27NM60ND, STW27NM60ND
3
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
μF
3.3
μF
RL
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
μF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
10/19
DocID15406 Rev 4
STB27NM60ND, STW27NM60ND
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID15406 Rev 4
11/19
19
Package mechanical data
STB27NM60ND, STW27NM60ND
Table 8. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
12/19
DocID15406 Rev 4
STB27NM60ND, STW27NM60ND
Package mechanical data
Figure 22. D²PAK (TO-263) drawing
0079457_T
Figure 23. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
DocID15406 Rev 4
13/19
19
Package mechanical data
STB27NM60ND, STW27NM60ND
Table 9. TO-247 mechanical data
mm.
Typ.
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅P
∅R
S
3.55
4.50
5.30
3.65
5.50
5.70
14/19
DocID15406 Rev 4
STB27NM60ND, STW27NM60ND
Package mechanical data
Figure 24. TO-247 drawing
0075325_G
DocID15406 Rev 4
15/19
19
Packing mechanical data
STB27NM60ND, STW27NM60ND
5
Packing mechanical data
Table 10. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
16/19
DocID15406 Rev 4
STB27NM60ND, STW27NM60ND
Packing mechanical data
Figure 25. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
Top cover
tape
P2
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 26. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
DocID15406 Rev 4
17/19
19
Revision history
STB27NM60ND, STW27NM60ND
6
Revision history
Table 11. Document revision history
Date
Revision
Changes
02-Mar-2009
08-Mar-2011
1
2
First release.
Document status promoted from preliminary data to datasheet.
Inserted new device in D2PAK.
Updated Table 1: Device summary, Table 3: Thermal data,
Section 3: Test circuits and Section 4: Package mechanical
data
28-Nov-2011
31-Oct-2013
3
4
Inserted Section 5: Packing mechanical data.
– Minor text changes.
– Updated: title and features in cover page
– Updated: Section 4: Package mechanical data and Section 5:
Packing mechanical data
– Minor text changes
18/19
DocID15406 Rev 4
STB27NM60ND, STW27NM60ND
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DocID15406 Rev 4
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