STV9379 [STMICROELECTRONICS]
VERTICAL DEFLECTION BOOSTER; 垂直偏转助推器
| 型号： | STV9379 |
| 厂家： | 
ST |
| 描述： | VERTICAL DEFLECTION BOOSTER |
| 文件： | 总5页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STV9379
VERTICAL DEFLECTION BOOSTER
.
.
.
.
.
.
POWER AMPLIFIER
FLYBACK GENERATOR
THERMAL PROTECTION
OUTPUT CURRENT UP TO 2.0APP
FLYBACK VOLTAGE UP TO 90V (on Pin 5)
SUITABLEFOR DC COUPLING APPLICATION
HEPTAWATT
(Plastic Package)
DESCRIPTION
ORDER CODE :
STV9379
Designed for monitors and high performance TVs,
the STV9379 vertical deflection booster delivers
flyback voltages close to 90V.
TheSTV9379operateswith suppliesup to 42Vand
provides up to 2APP output current to drive the
yoke.
The STV9379 is offered in HEPTAWATT package.
PIN CONNECTIONS
7
6
5
4
3
2
1
Non-inverting Input
Output Stage Supply
Output
GND
Flyback Generator
Supply Voltage
Inverting Input
Tab connected to pin 4
1/5
August 1998
STV9379
BLOCK DIAGRAM
OUTPUT
STAGE
SUPPLY
SUPPLY
VOLTAGE
FLYBACK
GENERATOR
2
6
3
FLYBACK
GENERATOR
1
7
INVERTING INPUT
POWER
AMPLIFIER
5
OUTPUT
NON-INVERTING INPUT
THERMAL
PROTECTION
STV9379
4
GROUND OR NEGATIVE SUPPLY
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Supply Voltage (Pin 2) (see note 1)
Value
50
Unit
V
VS
V6
Flyback Peak Voltage (Pin 6) (see note 1)
Amplifier Input Voltage (Pins 1-7) (see note 1)
Maximum Output Peak Current (see notes 2 and 3)
Maximum Sink Current (first part of flyback) (t < 1ms)
Maximum Source Current (t < 1ms)
100
V
V1 , V7
IO
- 0.3, + VS
1.5
V
A
I3
1.5
A
I3
1.5
A
VESD
Toper
Tstg
Tj
ESD susceptibility : EIAJ Norm (200pF discharged through 0Ω)
Operating Ambient Temperature
300
V
- 20, + 75
- 40, + 150
+150
oC
oC
oC
Storage Temperature
Junction Temperature
Notes : 1.
Versus Pin 4.
2.
3.
The output current can reach 4A peak for t ≤ 10µs (up to 120Hz).
Provided SOAR is respected (see Figures 1 and 2).
THERMAL DATA
Symbol
Parameter
Junction-case Thermal Resistance
Temperature for Thermal Shutdown
Value
3
Unit
oC/W
oC
oC
oC
Rth (j-c)
Tt
Max.
150
10
∆Tt
Tjr
Hysteresis on Tt
Recommended Max. Junction Temperature
120
2/5
STV9379
ELECTRICAL CHARACTERISTICS
(VS = 42V, TA = 25oC, unless otherwise specified)
Symbol
VS
Parameter
Operating Supply Voltage Range
Pin 2 Quiescent Current
Test Conditions
Versus Pin 4
I3 = 0, I5 = 0
Min.
Typ.
Max.
42
20
30
1
Unit
V
10
I2
10
10
mA
mA
A
I6
Pin 6 Quiescent Current
I3 = 0, I5 = 0
5
IO
Max. Peak Output Current
Amplifier Bias Current
I1
V1 = 25V, V7 = 26V
V1 = 26V, V7 = 25V
- 0.15
- 0.15
- 1
- 1
7
µA
µA
mV
µV/oC
dB
V
I7
Amplifier Bias Current
VIO
Offset Voltage
∆VIO/dt
GV
Offset Drift versus Temperature
Voltage Gain
- 10
80
V5L
V5H
VD5 - 6
VD3 - 2
V3L
V3SH
Output Saturation Voltage to GND (Pin 4)
Output Saturation Voltage to Supply (Pin 6)
Diode Forward Voltage between Pins 5-6
Diode Forward Voltage between Pins 3-2
Saturation Voltage on Pin 3
I5 = 1A
1
1.5
2.1
2
I5 = - 1A
I5 = 1A
1.6
1.5
1.5
0.8
2.1
V
V
I3 = 1A
2
V
I3 = 20mA
1.2
2.9
V
Saturation Voltage to Pin 2 (2nd part of flyback) I3 = - 1A
V
APPLICATION CIRCUITS
AC COUPLING
+VS
3
CF
2
6
FLYBACK
GENERATOR
R5
1
7
POWER
AMPLIFIER
5
Ly
Yoke
Rd (*)
THERMAL
PROTECTION
VREF
STV9379
4
R3
R2
R4
CL
R1
Ly
50µs
Ly
20µs
< Rd <
(*)
3/5
STV9379
APPLICATION CIRCUITS (continued)
DC COUPLING
+VS
3
CF
2
6
FLYBACK
GENERATOR
R5
1
POWER
5
AMPLIFIER
VREF+
Vertical
Position
Adjustment
7
Ly
Yoke
Rd (*)
THERMAL
PROTECTION
STV9379
4
-VEE
R2
R1
Ly
50µs
Ly
20µs
< Rd <
(*)
Figure 1 :
Figure 2 :
Output Transistors SOA
(for secondary breakdown)
SecondaryBreakdown Temperature
Derating Curve
(ISB = secondarybreakdown current)
ISB (%)
100
IC (A)
10
@ T
= 25°C
case
90
80
70
1
-1
10
t = 1ms
t = 10ms
t = 100ms
V
(V)
CE
Tcase (°C)
-2
10
60
25
2
1
10
10
50
75
100
125
4/5
STV9379
PACKAGE MECHANICAL DATA :
7 PINS - PLASTICHEPTAWATT
Dimensions
Millimeters
Inches
Typ.
Min.
Typ.
Max.
4.8
1.37
2.8
1.35
0.55
08
Min.
Max.
0.189
0.054
0.110
0.053
0.022
0.031
0.035
0.105
0.205
0.307
0.409
0.409
A
C
D
D1
E
F
2.4
1.2
0.35
0.6
0.094
0.047
0.014
0.024
F1
G
0.9
2.41
4.91
7.49
2.54
5.08
7.62
2.67
5.21
7.8
10.4
10.4
0.095
0.193
0.295
0.100
0.200
0.300
G1
G2
H2
H3
L
L1
L2
L3
L5
L6
L7
M
10.05
0.396
16.97
14.92
21.54
22.62
0.668
0.587
0.848
0.891
2.6
15.1
6
3
15.8
6.6
0.102
0.594
0.236
0.118
0.622
0.260
2.8
5.08
0.110
0.200
M1
Dia.
3.65
3.85
0.144
0.152
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previouslysupplied. STMicroelectronics products are notauthorizedfor use as criticalcomp onentsin lifesupport devicesor systems
without express written approval of STMicroelectronics.
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Rights to use these components in a I2C system, is granted provided that the system conforms to
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