STRH60N20FSY3 [STMICROELECTRONICS]
53A, 200V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED PACKAGE-3;
| 型号： | STRH60N20FSY3 |
| 厂家： | 
ST |
| 描述： | 53A, 200V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总13页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STRH60N20FSY1
STRH60N20FSY3
N-channel 200V - 0.044Ω - TO-254AA
Rad-hard low gate charge STripFET™ Power MOSFET
Features
Type
VDSS
STRH60N20FSY1
STRH60N20FSY3
200V
200V
■ Low R
DS(on)
3
2
■ Fast switching
1
■ Single event effect (SEE) hardned
■ Low total gate charge
O-254AA
■ Light weight
■ 100% avalanche tested
■ Application oriented characterization
■ Hermetically sealed
Figure 1.
Internal schematic diagram
■ Heavy ion SOA
■ 100kRad TID
■ SEL & SEGR with 34Mev/cm²/mg LET ions
Applications
■ Satellite
■ High reliabiliy
Description
Ts Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to sustain hgh TID and
provide immunity to heavy ion effects. It is
therefore suitable as power switch in mainly high-
efficiency DC-DC converters. It is also intended
for any application with low gate charge drive
requirements.
Table 1.
Device summary
Order codes
Marking
Package
TO-254AA
TO-254AA
Packaging
STRH60N20FSY1 (1)
STRH60N20FSY3 (2)
1. Mil temp range
RH60N20FSY1
RH60N20FSY3
Individual strip pack
Individual strip pack
2. Space flights parts (full ESCC flow screening)
November 2007
Rev 5
1/13
www.st.com
13
Contents
STRH60N20FSY1 - STRH60N20FSY3
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
2.3
Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Post-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STRH60N20FSY1 - STRH60N20FSY3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings (pre-irradiation)
Parameter
Value
Unit
VDS
VGS
Drain-source voltage (VGS = 0)
200
V
Gate-source voltage
16
53
V
A
(1)
ID
Drain current (continuous) at TC= 25°C
Drain current (continuous) at TC= 100°C
Drain current (pulsed)
(1)
ID
38
A
(2)
IDM
160
312
4
A
(1)
PTOT
Total dissipation at TC= 25°C
Peak diode recovery voltage slope
Storage temperature
W
dv/dt (3)
Tstg
V/ns
–5o 150
150
°C
°C
Tj
Max. operating junction temperature
1. Rated according to the Rthj-case
2. Pulse width limited by safe operating area
3. ISD ≤ 45 A, di/dt ≤ 400 A/µs, VDD = 80 %V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthc-s Case-to-sink typ
0.4
0.21
48
°C/W
°C/W
°C/W
Rthj-amb Thermal resistance junction -amb max
Tale 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
IAR
40
A
Single pulse avalanche energy
EAS
360
20
mJ
mJ
(starting Tj=2 5°C, ID=IAR, VDD= 50 V)
(1)
EAR
Repetitive avalanche
1. Pulse number = 10; f= 10 KHz; D.C. = 50%
3/13
Electrical characteristics
STRH60N20FSY1 - STRH60N20FSY3
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
CASE
2.1
Pre-irradiation
Table 5.
Symbol
On/off states
Parameter
Test conditions
80% BVDss
Min.
Typ. Max. Unit
Zero gate voltage drain
current (VGS = 0)
IDSS
10
µA
nA
Gate body leakage current
(VDS = 0)
IGSS
VGS = 16 V
±100
Drain-to-source breakdown
voltage
BVDSS
ID = 1 mA, VGS = 0
VDS =VGS, ID = 1 mA
VGS = 12 V, ID = 20 A
200
2
V
V
Ω
VGS(th) Gate threshold voltage
4.5
Static drain-source on
resistance
RDS(on)
0.044 0.050
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ. Max. Unit
Input capacitance
Ciss
Coss
Crss
9280 11600 13920
pF
pF
pF
VGS = 0, VDS = 25 V,
f= 1MHz
Output capacitance
732
915
22
1098
26.4
Reverse transfer
capacitance
17.6
Qg
Qgs
Qgd
Total te charge
17.4
37.6
50.4
218
47
261.6
56.4
75.6
nC
nC
nC
VDD = 160 V, ID = 20 A,
VGS=12 V
G-to-source charge
Gate-to-drain charge
63
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
RG
Gate input resistance
0.88
1.1
1.32
Ω
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
32.8
56
41
70
49.2
84
ns
ns
ns
ns
VDD = 100 V, ID = 40 A
Turn-off-delay time
Fall time
RG = 4.7 Ω, VGS = 10 V
87.2
53.6
109
67
131
80.4
4/13
STRH60N20FSY1 - STRH60N20FSY3
Electrical characteristics
Min. Typ. Max Unit
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
53
A
A
(1)
ISDM
Source-drain current (pulsed)
160
(2)
VSD
Forward on voltage
ISD = 40 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
413 516 619
ns
µC
A
ISD = 40 A, di/dt = 100 A/µs
VDD= 60 V, Tj=25°C
Qrr
11.6
45
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
486 608 729
ns
µC
A
ISD = 40 A, di/dt = 100 A/µs
VDD= 60 V, Tj=150 °C
Qrr
15.8
468
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2.2
Post-irradiation
The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The
technology is extremely resistant to assurance well functioning of the device inside the
radiation environments. Every manufacturing lot is tested for total ionizing dose.
(a)
(@Tj=25 °C up to 100 Krad
)
Table 9.
Symbol
On/off states
Parameter
Test conditions
80% BVDss
Min. Typ. Max Unit
Zero gate voltage drain current
(VGS = 0)
IDSS
10
µA
nA
Gate dy leakage current
(VDS = 0)
IGSS
VGS = 16 V
±100
Drain-to-source breakdown
voltage
BVDSS
ID = 1 mA, VGS = 0
VDS =VGS, ID = 1mA
200
2
V
V
Ω
VGS(th) Gate threshold voltage
4.5
Static drain-source on
resistance
RDS(on)
VGS = 12 V, ID = 20 A
0.044 0.050
a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.
5/13
Electrical characteristics
STRH60N20FSY1 - STRH60N20FSY3
(1)
Single event effect, SOA
VDS (V) @VGS0V
Ion
Let (Mev/(mg/cm2))
Energy (MeV)
Range (µm)
Kr
34
316
459
43
43
200
195
Xe
55.9
1. Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect
(SEE). Single event effect characterization is illustred
Figure 2.
Bias condition during radiation
Table 10. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
Source-drain current
ISD
53
A
A
Source-drain current
(pulsed)
(1)
ISDM
160
(2)
VSD
Forwad on voltage
ISD = 40 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
413 516 619 ns
ISD = 40 A, di/dt = 100 A/µs
VDD= 60 V, Tj=25°C
Qrr
11.6
45
µC
A
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
486 608 729 ns
ISD = 40 A, di/dt = 100 A/µs
VDD= 60 V, Tj=150°C
Qrr
15.8
468
µC
A
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
6/13
STRH60N20FSY1 - STRH60N20FSY3
Electrical characteristics
2.3
Electrical characteristics (curves)
Figure 3.
Safe operating area
Figure 4.
Thermal impedance
Figure 5.
Output characteristics
Figure 6.
Transfer characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Capacitance variations
7/13
Electrical characteristics
STRH60N20FSY1 - STRH60N20FSY3
Figure 9.
Normalized BV
vs temperature Figure 10. Static drain-source on resistance
DSS
Figure 11. Normalized gate threshold voltage Figure 12. Normalized oesistance vs
vs temperature
temperaure
Figure 13. Source drain-diode forward
characteristics
8/13
STRH60N20FSY1 - STRH60N20FSY3
Test circuit
3
Test circuit
(1)
Figure 14. Switching times test circuit for resistive load
1. Max driver VGS slope = 1V/ns (no DUT)
Figure 15. Unclamped inductive load test circuit (single pulse and repetitive)
9/13
Package mechanical data
STRH60N20FSY1 - STRH60N20FSY3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STRH60N20FSY1 - STRH60N20FSY3
Package mechanical data
Table 11. TO-254AA mechanical data
mm.
TYP
inch
DIM.
MIN.
MAX.
MIN.
TYP.
MAX.
A
B
13.59
13.59
20.07
6.32
13.84
13.84
20.32
6.60
0.535
0.535
0.790
0.249
0.040
0.139
0.665
0.545
0.545
0.80
C
D
E
0.260
0.050
0.149
0.685
1.02
1.27
F
3.53
3.78
G
H
I
16.89
17.40
6.86
0.270
0.89
1.14
0.035
0.510
0.045
0.570
J
3.81
3.81
0.150
0.150
K
L
12.95
14.50
M
N
R1
R2
3.05
0.120
0.065
.71
1.0
0.025
0.040
1.65
Figure 16. Mechanical drawing
11/13
Revision history
STRH60N20FSY1 - STRH60N20FSY3
5
Revision history
Table 12. Revision history
Date
Revision
Changes
23-Jun-2006
18-Dec-2006
26-Mar-2007
22-Oct-2007
1
2
3
4
First release
New value on On/off states
Complete version
Note 2 on device summary has been updated
Added figures: 2 and 15.
15-Nov-2007
5
Updated values on tables: 6, 7, 8 and 10
Minor text changes to improve readability
12/13
STRH60N20FSY1 - STRH60N20FSY3
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13/13
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