STPS1545CG-TR [STMICROELECTRONICS]
POWER SCHOTTKY RECTIFIER; 功率肖特基整流器
| 型号： | STPS1545CG-TR |
| 厂家： | 
ST |
| 描述： | POWER SCHOTTKY RECTIFIER |
| 文件： | 总7页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS1545CT/CF/CG
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
2 x 7.5 A
45 V
A1
K
A2
Tj (max)
VF (max)
175 °C
0.57 V
K
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
EXTREMELYFAST SWITCHING
INSULATEDPACKAGE:ISOWATT220AB
Insulatingvoltage = 2000V DC
Capacitance= 12pF
A2
A2
K
K
A1
A1
TO-220AB
ISOWATT220AB
STPS1545CF
STPS1545CT
K
DESCRIPTION
Dualcenter tap Schottkyrectifiersuited for Switch-
Mode Power Supplyand high frequencyDC to DC
converters.
A2
A1
Packaged either in TO-220AB, ISOWATT220AB
or D2PAK, this device is especially intended for
use in low voltage, high frequency inverters, free
wheeling and polarityprotection applications.
D2PAK
STPS1545CG
ABSOLUTE RATINGS (limitingvalues, per diode)
Symbol
Parameter
Value
45
Unit
V
VRRM
Repetitivepeak reverse voltage
IF(RMS) RMSforward current
20
A
IF(AV)
Averageforwardcurrent
δ = 0.5
TO-220AB/
D2PAK
Tc = 157°C Per diode
7.5
A
ISOWATT220AB Tc = 130°C Per device
15
IFSM
IRRM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
150
A
A
A
µ
Repetitivepeak reverse current
tp = 2 s square
1
2
F = 1kHz
IRSM
Tstg
Tj
Non repetitive peak reverse current
Storage temperaturerange
µ
tp = 100 s square
-65 to +175 °C
Maximum operatingjunction temperature*
Critical rateof rise of reverse voltage
175
°C
µ
V/ s
dV/dt
10000
dPtot
dTj
1
* :
<
thermal runawayconditionfor a diode on its own heatsink
Rth(j−a)
June 1999 - Ed: 4B
1/7
STPS1545CT/CF/CG
THERMAL RESISTANCES
Symbol
Parameter
TO-220AB/ D2PAK
Value
Unit
°
C/W
Rth (j-c) Junctionto case
Per diode
Total
3.0
1.7
ISOWATT220AB
Per diode
Total
5.5
4.2
Rth (c)
TO-220AB/ D2PAK
ISOWATT220AB
Coupling
0.35
2.9
When the diodes1 and 2 are used simultaneously:
∆ Tj(diode 1) = P (diode1)x Rth(j-c) (per diode) + P (diode2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS
(Perdiode)
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
°
µ
A
IR *
Reverse leakage current
Tj = 25 C
VR = VRRM
100
Tj = 125°C
5
15
mA
V
°
VF *
Forward voltagedrop
Tj = 125 C
IF = 7.5 A
IF = 15 A
IF = 15 A
0.5
0.57
0.84
0.72
Tj = 25°C
Tj = 125°C
0.65
Pulse test : * tp = 380 s, < 2%
µ
δ
To evaluate the conductionlosses use the following equation:
2
P = 0.42x IF(AV) + 0.020 IF (RMS)
2/7
STPS1545CT/CF/CG
Fig. 1:
Average forward power dissipation versus
Fig. 2:
Average current versus ambient
averageforward current (per diode).
temperature (δ= 0.5, per diode).
PF(av)(W)
IF(av)(A)
6
δ = 0.1 δ = 0.2
δ = 0.5
9
TO-220AC
D PAK
δ = 0.05
Rth(j-a)=Rth(j-c)
8
7
6
5
4
3
2
1
0
5
δ = 1
ISOWATT220AC
4
3
2
Rth(j-a)=15°C/W
Rth(j-a)=40°C/W
T
T
1
IF(av) (A)
tp
=tp/T
δ
Tamb(°C)
75 100
tp
=tp/T
δ
0
0
1
2
3
4
5
6
7
8
9
10
0
25
50
125
150
175
Fig. 3-2:
Nonrepetitivesurgepeak forwardcurrent
Fig.3-1:
Nonrepetitivesurgepeak forwardcurrent
versus overload duration (maximum values, per
diode) (ISOWATT220AB).
versus overload duration (maximum values, per
diode)(TO-220AB and D2PAK).
IM(A)
IM(A)
80
70
60
120
100
80
50
Tc=50°C
Tc=50°C
40
60
40
20
0
Tc=100°C
Tc=100°C
30
Tc=150°C
20
IM
IM
Tc=150°C
t
t
10
δ=0.5
t(s)
δ=0.5
t(s)
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 4-2:
Relative variation of thermal transient
Fig. 4-1:
Relative variation of thermal transient
impedance junction to case versus pulse duration
(per diode) (ISOWATT220AB).
impedance junction to case versus pulse duration
(perdiode) (TO-220ABand D2PAK).
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.8
0.8
δ = 0.5
0.6
δ = 0.5
0.6
0.4
0.4
δ = 0.2
T
T
δ = 0.2
0.2
δ = 0.1
0.2
δ = 0.1
Single pulse
tp(s)
=tp/T
δ
tp
tp
tp(s)
=tp/T
δ
Single pulse
0.0
1E-3
0.0
1E-4
1E-2
1E-1
1E+0
1E+1
3/7
1E-3
1E-2
1E-1
1E+0
STPS1545CT/CF/CG
Fig. 5:
Fig. 6:
Junction capacitance versus reverse
voltageapplied (typical values, per diode).
Reverse leakage current versus reverse
voltage applied (typical values, per diode).
C(pF)
IR(µA)
1000
5E+4
F=1MHz
Tj=25°C
Tj=150°C
1E+4
Tj=125°C
500
200
1E+3
Tj=100°C
Tj=75°C
1E+2
Tj=50°C
1E+1
Tj=25°C
1E+0
VR(V)
VR(V)
1E-1
100
0
5
10 15 20 25
30 35 40 45
1
2
5
10
20
50
Fig. 8:
Thermal resistance junction to ambient
Fig. 7:
Forward voltage drop versus forward
versus copper surface under tab (Epoxy printed
circuit board, copper thickness:35µm).
current (maximum values, per diode).
IFM(A)
Rth(j-a) (°C/W)
100.0
80
70
60
50
40
30
20
Tj=125°C
Typical values
Tj=25°C
10.0
Tj=125°C
1.0
10
S(Cu) (cm )
VFM(V)
0
0.1
0
2
4
6
8
10 12 14 16 18 20
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
4/7
STPS1545CT/CF/CG
PACKAGE MECHANICAL DATA
D2PAK
DIMENSIONS
Millimeters Inches
Min. Min.
REF.
A
Max.
4.60
2.69
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
1.40
1.75
3.20
Max.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
0.409
0.208
0.624
0.055
0.069
0.126
E
A
A1
A2
B
4.40
2.49
0.03
0.70
1.14
0.45
1.23
8.95
10.00
4.88
15.00
1.27
1.40
2.40
0.173
0.098
0.001
0.027
0.045
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
C2
L2
D
L
B2
C
L3
A1
C2
D
B2
R
C
B
E
G
G
A2
L
L2
L3
M
M
*
V2
* FLAT ZONE NO LESSTHAN 2mm
R
0.40 typ.
0.016 typ.
V2
0°
8°
0°
8°
FOOTPRINT DIMENSIONS
(in millimeters)
16.90
10.30
5.08
1.30
3.70
8.90
5/7
STPS1545CT/CF/CG
PACKAGE MECHANICAL DATA
TO-220AB
DIMENSIONS
Millimeters Inches
Min. Min.
REF.
Max.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
Max.
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
A
C
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
A
H2
D
Dia
C
E
L5
F
L7
F1
F2
G
L6
L2
F2
G1
H2
L2
L4
L5
L6
L7
L9
M
D
F1
L9
L4
16.4typ.
0.645 typ.
F
13
14
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
M
G1
E
2.65
15.25
6.20
3.50
2.95
15.75
6.60
3.93
G
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
6/7
STPS1545CT/CF/CG
PACKAGE MECHANICAL DATA
ISOWATT220AB
DIMENSIONS
Millimeters Inches
Min. Min.
REF.
Max.
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
10.40
Max.
0.181
0.106
0.108
0.028
0.039
0.067
0.067
0.205
0.106
0.409
A
B
4.40
2.50
2.50
0.40
0.75
1.15
1.15
4.95
2.40
10.00
0.173
0.098
0.098
0.016
0.030
0.045
0.045
0.195
0.094
0.394
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
16.00 typ.
0.630 typ.
28.60
9.80
30.60
10.60
16.40
1.125
0.386
0.626
1.205
0.417
0.646
15.90
Type
Marking
Package
Weight
Base qty
50
Deliverymode
Tube
STPS1545CT
STPS1545CF
STPS1545CT
TO-220AB
2.23 g.
2.08 g.
1.48 g.
1.48 g.
STPS1545CF ISOWATT220AB
50
Tube
STPS1545CG STPS1545CG
STPS1545CG-TR STPS1545CG
D2PAK
D2PAK
50
Tube
1000
Tape & reel
Cooling method:by conduction(C)
Expoxy meets UL94,V0
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all informationpreviously supplied.
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proval of STMicroelectronics.
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