STPR1520 [STMICROELECTRONICS]

ULTRA-FAST RECOVERY RECTIFIER DIODES; 超快恢复整流二极管
STPR1520
型号: STPR1520
厂家: ST    ST
描述:

ULTRA-FAST RECOVERY RECTIFIER DIODES
超快恢复整流二极管

整流二极管 快速恢复二极管
文件: 总6页 (文件大小:78K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STPR1520D/F  
ULTRA-FAST RECOVERY RECTIFIER DIODES  
MAIN PRODUCTS CHARACTERISTICS  
IF(AV)  
VRRM  
30 A  
200 V  
150°C  
0.99 V  
30 ns  
Tj (max)  
VF (max)  
trr (max)  
A
A
K
K
FEATURES  
TO-220AC  
STPR1520D  
ISOWATT220AC  
STPR1520F  
SUITED FOR SMPS  
LOW LOSSES  
LOW FORWARD AND REVERSE RECOVERY  
TIME  
HIGH SURGE CURRENT CAPABILITY  
HIGH AVALANCHEENERGY CAPABILITY  
Low cost single chip rectifier suited for switchmode  
power supply and high frequency DC to DC  
converters.  
Packagedin TO-220ACandISOWATT220AC,this  
device is intended for use in low voltage, high  
frequency inverters, free wheeling and polarity  
protectionapplications.  
Symbol  
VRRM  
Parameter  
Repetitivepeak reverse voltage  
Value  
200  
15  
Unit  
V
RMS forward current  
IF(RMS)  
IF(AV)  
A
Average forward current  
TO-220AC  
Tc = 115°C  
Tc = 70°C  
5
A
δ = 0.5  
ISOWATT220AC  
Surge non repetitiveforward current  
Tp = 10 ms  
Sinusoidal  
IFSM  
150  
A
Storage temperaturerange  
Tstg  
Tj  
- 65 to + 150  
+ 150  
°C  
Maximum operating junction temperature  
October 1999 - Ed: 2B  
1/6  
STPR1520D/F  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
2
Unit  
Junction to case  
TO-220AC  
Rth(j-c)  
°C/W  
ISOWATT220AC  
4.5  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
Parameters  
Test conditions  
Min. Typ. Max.  
Unit  
Reverse leakage current  
Tj = 25°C  
VR = VRRM  
µ
A
IR *  
50  
1
Tj = 100°C  
Tj = 125°C  
mA  
V
Forward voltage drop  
IF = 15 A  
IF = 30 A  
IF = 30 A  
VF **  
0.99  
1.20  
1.25  
°
Tj = 125 C  
°
Tj = 25 C  
Pulse test : * tp = 5 ms, δ < 2 %  
** tp = 380 µs, δ < 2 %  
To evaluate the conductionl2osses use the following equation:  
P = 0.78 x IF(AV) + 0.014 x IF (RMS)  
RECOVERY CHARACTERISTICS  
Symbol  
trr  
Test conditions  
Min. Typ. Max.  
Unit  
Tj = 25°C  
Tj = 25°C  
IF = 0.5A Irr = 0.25A IR = 1A  
IF = 1A tr = 10 ns VFR = 1.1x VF  
IF = 1A tr = 10 ns  
30  
ns  
tfr  
20  
3
°
Tj = 25 C  
VFP  
V
Fig. 1:  
average forward current.  
Fig. 2:  
Peakcurrent versus form factor.  
Average forward power dissipation versus  
2/6  
STPR1520D/F  
Fig. 3:  
temperature.  
Fig. 4:  
temperature.  
Average current versus ambient  
Average current versus ambient  
Fig. 5: Non repetitive surge peak forward current  
versus overload duration (maximum values)  
(TO-220AC)  
Fig. 6: Non repetitive surge peak forward current  
versus overload duration (maximum values)  
(ISOWATT220AC).  
Fig. 7: Relative variation of thermal transient  
impedance junction to case versus pulse duration  
(TO-220AC).  
Fig. 8: Relative variation of thermal transient  
impedance junction to case versus pulse duration  
(ISOWATT220AC).  
3/6  
STPR1520D/F  
Fig. 9:  
current.  
Fig. 10:  
Junction capacitance versus reverse  
voltage applied (typical values).  
Forward voltage drop versus forward  
Fig. 11: Recovery charge versus dIF/dt.  
Fig. 12: Peak reverse current versus dIF/dt.  
Fig. 13:  
temperature.  
Dynamic parameters versus junction  
4/6  
STPR1520D/F  
PACKAGE MECHANICAL DATA  
TO-220AC  
DIMENSIONS  
Millimeters Inches  
REF.  
Min.  
Max.  
Min.  
Max.  
A
C
4.40  
1.23  
2.40  
0.49  
0.61  
1.14  
4.95  
10.00  
4.60  
1.32  
2.72  
0.70  
0.88  
1.70  
5.15  
10.40  
0.173  
0.048  
0.094  
0.019  
0.024  
0.044  
0.194  
0.393  
0.181  
0.051  
0.107  
0.027  
0.034  
0.066  
0.202  
0.409  
H2  
A
C
D
E
L5  
L7  
F
Ø I  
F1  
G
L6  
L2  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
M
D
16.40 typ.  
0.645 typ.  
L9  
13.00  
2.65  
14.00  
2.95  
0.511  
0.104  
0.600  
0.244  
0.137  
0.551  
0.116  
0.620  
0.259  
0.154  
F1  
L4  
15.25  
6.20  
15.75  
6.60  
M
F
E
3.50  
3.93  
G
2.6 typ.  
0.102 typ.  
Diam. I  
3.75  
3.85  
0.147  
0.151  
5/6  
STPR1520D/F  
PACKAGE MECHANICAL DATA  
ISOWATT220AC  
A
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
H
B
REF.  
A
B
D
E
F
4.40  
2.50  
2.40  
0.40  
0.75  
4.60 0.173  
2.70 0.098  
2.75 0.094  
0.70 0.016  
1.00 0.030  
1.70 0.045  
5.20 0.195  
10.40 0.394  
0.181  
0.106  
0.108  
0.028  
0.039  
0.067  
0.205  
0.409  
L6  
L7  
L2  
F1 1.15  
L3  
G
H
4.95  
10.00  
F1  
L2  
16.00  
0.630  
L3 28.60  
L6 15.90  
L7 9.00  
30.60 1.125  
16.40 0.626  
9.30 0.354  
3.20 0.118  
1.205  
0.646  
0.366  
0.126  
Diam 3.00  
F
D
E
G
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
1999 STMicroelectronics - Printed inItaly - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
6/6  

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