STPR1020CB [STMICROELECTRONICS]
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES; 高效快速恢复整流二极管
| 型号： | STPR1020CB |
| 厂家： | 
ST |
| 描述： | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
| 文件： | 总3页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPR1020CB(-TR)
®
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
PRELIMINARY DATASHEET
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
2 x 5 A
200 V
35 ns
trr (max)
2, 4(TAB)
1
3
FEATURES AND BENEFITS
4
SUITED FOR SMPS AND DRIVES
SURFACE MOUNT
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
SURFACE MOUNT DEVICE
2
3
1
TAPE AND REEL OPTION : -TR
DESCRIPTION
DPAK
Dual rectifier suited for Switch Mode and high fre-
quency converters.
(Plastic)
Packaged in DPAK, this surface mount device is
intended for use in low voltage, high frequency in-
verters, free wheeling and polarity protection appli-
cations.
ABSOLUTE MAXIMUM RATINGS
Symbol
VRRM
Parameter
Repetitive Peak Reverse Voltage
Non Repetitive Surge Reverse Voltage
Value
200
220
10
Unit
V
VRSM
V
IF(RMS) RMS Forward Current
IF(AV) Average Forward Current
Per diode
A
Per diode
5
A
δ
Tcase = 130°C
= 0.5
Per device
10
IFSM
Surge Non Repetitive Forward Current
tp = 10 ms Sinusoidal
Per diode
70
A
°
C
Tstg
Tj
Storage Temperature Range
Max. Junction Temperature
- 40 to + 150
150
°C
February 1999 - Ed : 2B
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STPR1020CB(-TR)
THERMAL RESISTANCES
Symbol
Parameter
Value
5
Unit
Rth (j-c) Junction to Case Thermal Resistance
Per diode
Total
°C/W
2.7
Rth (c)
Coupling
°C/W
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode) x Rth (per diode) + P(diode 2) x Rth (c)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Tests Conditions
Symbol
Tests Conditions
Reverse leakage Current Tj = 25 C
Min. Typ. Max.
Unit
°
µ
A
IR *
VR = VRRM
20
°
Tj = 100 C
0.15
0.8
0.5
mA
V
VF **
Forward Voltage drop
Tj = 25°C
IF = 10 A
IF = 5 A
1.25
0.85
°
Tj = 100 C
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2%
To evaluate the maximum conduction losses use the following equation :
2
P = 0.7 x IF(AV) + 0.030 IF (RMS)
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
IF = 1A
Min.
Typ.
Max.
Unit
Α
trr
Tj = 25°C
Tj = 25°C
Tj = 25°C
dIF/dt = -50 /ms
35
ns
VF = 30V
tfr
IF = 1A
tr = 10 ns
tr = 10 ns
20
5
ns
V
VFR = 1.1 x VF
VFP
IF = 1A
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STPR1020CB(-TR)
PACKAGE MECHANICAL DATA
DPAK
DIMENSIONS
Millimeters Inches
Min. Typ. Max Min. Typ. Max.
REF.
A
A1
A2
B
2.20
0.90
0.03
0.64
5.20
0.45
2.40 0.086
1.10 0.035
0.23 0.001
0.90 0.025
5.40 0.204
0.60 0.017
0.60 0.018
6.20 0.236
6.60 0.251
4.60 0.173
10.10 0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
B2
C
C2 0.48
D
E
6.00
6.40
4.40
9.35
G
H
L2
L4
V2
0.80
0.031
0.60
0°
1.00 0.023
0.039
8°
8°
0°
FOOT PRINT
in millimeters
6.7
6.7
6.7
3
1.6
1.6
2.3 2.3
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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相关型号：
STPR1020CT
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。
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