STL80N3LLH6 [STMICROELECTRONICS]
21A, 30V, 0.0076ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8;
| 型号： | STL80N3LLH6 |
| 厂家： | 
ST |
| 描述： | 21A, 30V, 0.0076ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：862K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STL80N3LLH6
N-channel 30 V, 0.0046 Ω, 21 A PowerFLAT™ 5x6
STripFET™ VI DeepGATE™ Power MOSFET
Features
RDS(on)
max
Order code
VDSS
ID
STL80N3LLH6
30 V
0.0052 Ω 21 A (1)
1. The value is rated according R
thj-pcb
1
2
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
3
4
PowerFLAT™ 5x6
■ Low gate drive power losses
■ Very low switching gate charge
Applications
Figure 1.
Internal schematic diagram
■ Switching applications
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Description
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This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
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Table 1.
Order code
STL80N3LLH6
Device summary
Marking
Package
Packaging
Tape and reel
80N3LLH6
PowerFLAT™ 5x6
December 2011
Doc ID 16773 Rev 4
1/13
www.st.com
13
Contents
STL80N3LLH6
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
Doc ID 16773 Rev 4
STL80N3LLH6
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
30
20
Unit
VDS
VGS
Drain-source voltage
V
V
Gate-source voltage
(1)
ID
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 70 °C
Drain current (continuous) at TC = 100 °C
Drain current (continuous) at Tpcb = 25 °C
Drain current (continuous) at Tpcb=70 °C
Drain current (continuous) at Tpcb=100 °C
Drain current (pulsed)
80
60
A
(1)
ID
A
(1)
ID
51
A
(2)
ID
21
A
(2)
ID
15.7
13.1
84
A
(2)
ID
A
(3)
IDM
A
(1)
PTOT
Total dissipation at TC = 25 °C
Total dissipation at Tpcb = 25 °C
Derating factor
60
W
W
W/°C
(2)
PTOT
4
0.03
TJ
Operating junction temperature
Storage temperature
-55 to 150
°C
Tstg
1. The value is rated according to R
2. The value is rated according to R
.
thj-c
thj-pcb.
3. Pulse width limited by safe operating area.
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case (drain, steady state)
Thermal resistance junction-ambient
2.08
31.3
°C/W
°C/W
(1)
Rthj-pcb
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Doc ID 16773 Rev 4
3/13
Electrical characteristics
STL80N3LLH6
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min. Typ.
Max.
Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250 µA, VGS= 0
30
V
VDS = 30 V,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = 30 V at TC =125 °C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS = 20 V
100
2.5
nA
V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
1
1.7
VGS= 10 V, ID= 10.5 A
VGS= 4.5 V, ID= 10.5 A
0.0046 0.0052
0.0067 0.0076
Ω
Ω
Static drain-source on
resistance
RDS(on)
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Output capacitance
Ciss
Coss
Crss
1350 1690 2030
pF
pF
pF
V
DS = 25 V, f=1 MHz,
230
140
290
176
350
210
VGS=0
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 21 A
VGS =4.5 V
17
8
nC
nC
nC
(see Figure 14)
6
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
RG
Gate input resistance
1.25
1.7
2
Ω
4/13
Doc ID 16773 Rev 4
STL80N3LLH6
Electrical characteristics
Table 6.
Switching times
Parameter
Symbol
Test conditions
Min.
Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
9.5
30
37
12
ns
ns
ns
ns
VDD=15 V, ID= 10.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
-
-
Turn-off delay time
Fall time
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min
Typ. Max
Unit
ISD
Source-drain current
-
-
-
21
84
A
A
V
(1)
ISDM
Source-drain current (pulsed)
Forward on voltage
(2)
VSD
ISD = 21 A, VGS=0
1.1
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10.5 A,
24
16.8
1.4
ns
nC
A
Qrr
di/dt = 100 A/µs,
-
IRRM
VDD=25 V
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Doc ID 16773 Rev 4
5/13
Electrical characteristics
STL80N3LLH6
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM08914v1
PCB for PowerFLAT
I
D
(A)
K
Tj=150°C
Tc=25°C
δ=0.5
Single pulse
0.2
0.1
100
10-1
10ms
10
1
0.05
0.02
100ms
1s
10-2
0.01
Zth-pcb=k*Rthj-pcb,
Rthj-pcb=63.5°C/W
0.1
Single pulse
10-3
10-3
0.01
100
10-2
101
102
10-1
10
V
DS(V)
p(s)
t
0.1
1
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM08915v1
AM08916v1
I
D
(A)
I
D
(A)
VGS=10V
VDS=3V
6V
250
200
150
200
150
100
5V
4V
100
50
0
50
0
3V
1
1
4
5
V
DS(V)
4
5
VGS(V)
0
2
3
0
2
3
Figure 6.
Normalized BVDSS vs temperature Figure 7.
Static drain-source on resistance
AM08917v1
AM08918v1
BVDSS
R
DS(on)
(mΩ)
(norm)
1.06
1.04
5.5
VGS=10V
ID=1mA
5.0
4.5
4.0
3.5
1.02
1.00
0.98
3.0
2.5
2.0
0.96
0.94
0.92
20
30
10
-50
-25
0
25 50 75
T
J
(°C)
0
ID
(A)
100
6/13
Doc ID 16773 Rev 4
STL80N3LLH6
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM08919v1
AM08920v1
V
GS
C
(V)
(pF)
V
DD=15V
=17A
12
10
8
2500
I
D
2000
1500
Ciss
6
1000
500
0
4
2
0
Coss
Crss
20
40
0
50
Q
g
(nC)
VDS(V)
0
10
30
10
20
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
AM08921v1
AM08922v1
V
GS(th)
(norm)
R
DS(on)
(norm)
ID=250µA
1.8
1.2
1.0
0.8
0.6
I
D
=10.5A
1.6
1.4
V
GS=10V
1.2
1.0
0.8
0.6
0.4
0.4
0.2
0.2
0
-50
-25
-50
-25
0
25 50 75
TJ(°C)
0
25 50 75
TJ(°C)
100
100
Figure 12. Source-drain diode forward
characteristics
AM08923v1
VSD
(V)
1.0
TJ=-55°C
0.9
0.8
0.7
0.6
TJ=25°C
TJ=150°C
0.5
0.4
0
60 70
10
20
30 40 50
ISD(A)
Doc ID 16773 Rev 4
7/13
Test circuits
STL80N3LLH6
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
100nF
1kΩ
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
μF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
S
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
8/13
Doc ID 16773 Rev 4
STL80N3LLH6
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 16773 Rev 4
9/13
Package mechanical data
STL80N3LLH6
Table 8.
Dim.
PowerFLAT 5x6 type S-R mechanical data
mm
Min.
Typ.
Max.
A
A1
A2
b
0.80
0.02
1.00
0.05
0.25
0.30
0.50
D
5.20
6.15
E
D2
E2
e
4.11
3.50
4.31
3.70
1.27
L
0.50
0.80
K
1.275
1.575
Figure 19. PowerFLAT 5x6 type S-R drawing
Bottom View
Top View
Side View
8231817_Rev_D
10/13
Doc ID 16773 Rev 4
STL80N3LLH6
Package mechanical data
Figure 20. PowerFLAT™ 5x6 recommended footprint (dimensions in mm)
5.35
4.41
0.62
1.27
Footprint
Doc ID 16773 Rev 4
11/13
Revision history
STL80N3LLH6
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
12-Nov-2009
30-Mar-2010
1
2
First release.
DS(on) values changed in Table 4: On/off states
R
– Document status promoted from preliminary data to datasheet;
26-Sep-2011
02-Dec-2011
3
4
– Inserted ID value @ 70 °C, in Table 2: Absolute maximum ratings.
Section 4: Package mechanical data has been updated.
Minor text changes.
12/13
Doc ID 16773 Rev 4
STL80N3LLH6
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Doc ID 16773 Rev 4
13/13
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