STH16NA40 [STMICROELECTRONICS]
N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS; N - CHANNEL 400V - 0.21ohm - 16A - TO- 247 / ISOWATT218功率MOS晶体管
| 型号： | STH16NA40 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS |
| 文件： | 总6页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW16NA40
STH16NA40FI
®
N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218
POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
400 V
400V
< 0.3 Ω
< 0.3 Ω
16 A
10 A
STW16NA40
STH16NA40FI
■
■
■
■
■
TYPICAL RDS(on) = 0.21 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
APPLICATION ORIENTED
3
3
2
2
1
CHARACTERIZATION
1
APPLICATIONS
TO-247
ISOWATT218
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLY (SMPS)
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW16NA40 STH16NA40FI
VDS
VDGR
VGS
ID
400
400
± 30
V
V
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
V
o
16
10
10
7
A
Drain Current (continuous) at Tc = 25 C
o
ID
A
Drain Current (continuous) at Tc = 100 C
I
DM(•)
64
64
A
Drain Current (pulsed)
o
Ptot
180
1.44
70
W
W/oC
V
oC
oC
Total Dissipation at Tc = 25 C
0.56
4000
Derating Factor
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/6
October 1998
STW16NA40-STH16NA40FI
THERMAL DATA
TO-247
ISOWATT218
Rthj-case
0.69
1.78
oC/W
Thermal Resistance Junction-case
Max
Rthj-amb
Rthc-sink
Tl
30
0.1
300
oC/W
oC/W
oC
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
16
A
(pulse width limited by Tj max, δ < 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
(starting Tj = 25 C, ID = IAR, VDD = 50 V)
435
23
mJ
mJ
A
o
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
10
o
(Tc = 100 C, pulse width limited by Tj max, δ < 1%)
(Tcase = 25 oC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Parameter
Test Conditions
D = 250 µA VGS = 0
Min.
Typ.
Max.
Unit
400
V
I
IDSS
25
250
µA
µA
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 100 oC
IGSS
Gate-body Leakage
VGS = ± 30 V
±100
nA
Current (VDS = 0)
ON ( )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
2.25
3
3.75
V
VDS = VGS ID = 250 µA
RDS(on)
ID(on)
0.21
0.3
0.6
Ω
Ω
Static Drain-source On VGS = 10V ID = 8 A
Resistance
V
GS = 10V ID = 8 A
Tc = 100oC
VDS > ID(on) x RDS(on)max
16
A
On State Drain Current
V
GS = 10 V
DYNAMIC
Symbol
Parameter
Test Conditions
VDS > ID(on) x RDS(on)max
Min.
Typ.
Max.
Unit
gfs ( )
Forward
Transconductance
9
12
S
ID = 8 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
2600
390
120
3500
540
160
pF
pF
pF
V
DS = 25 V f = 1 MHz VGS = 0
2/6
®
STW16NA40-STH16NA40FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
DD = 200 V
Min.
Typ.
Max.
Unit
td(on)
tr
V
ID = 8 A
20
18
25
24
ns
ns
Rise Time
RG = 4.7 Ω
VGS = 10 V
(di/dt)on
VDD = 320 V
ID = 16 A
380
A/µs
Turn-on Current Slope
RG = 47 Ω
VGS = 10 V
Qg
Qgs
Qgd
145
15
50
nC
nC
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 320 V ID = 16 A VGS = 10 V
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
25
20
45
35
25
60
ns
ns
ns
V
DD = 320 V
ID = 16 A
VGS = 10 V
Off-voltage Rise Time
Fall Time
Cross-over Time
RG = 4.7 Ω
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
16
64
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( )
trr
1.6
V
Forward On Voltage
ISD = 16 A
VGS = 0
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
550
9.6
35
ns
I
SD = 16 A
di/dt = 100 A/µs
Qrr
µC
VDD = 100 V
Tj = 150 oC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
®
STW16NA40-STH16NA40FI
TO-247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
5.3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
A
D
4.7
2.2
0.4
1
2.6
E
0.8
F
1.4
F3
F4
G
2
2.4
3
3.4
10.9
0.429
H
15.3
19.7
14.2
15.9
20.3
14.8
0.602
0.776
0.559
0.626
0.779
0.582
L
L3
L4
L5
M
0.413
1.362
0.217
34.6
5.5
2
3
0.079
0.140
0.118
0.144
Dia
3.55
3.65
P025P
4/6
®
STW16NA40-STH16NA40FI
ISOWATT218 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
5.35
3.3
TYP.
MAX.
5.65
3.8
MIN.
0.210
0.130
0.114
0.074
0.029
0.041
0.425
0.622
0.818
0.752
0.897
1.594
0.190
0.797
0.137
0.082
MAX.
0.222
0.149
0.122
0.081
0.039
0.049
0.441
0.637
0.834
0.783
0.929
1.673
0.206
0.817
0.145
0.090
A
C
D
2.9
3.1
D1
E
1.88
0.75
1.05
10.8
15.8
20.8
19.1
22.8
40.5
4.85
20.25
3.5
2.08
1
F
1.25
11.2
16.2
21.2
19.9
23.6
42.5
5.25
20.75
3.7
G
H
L1
L2
L3
L4
L5
L6
M
N
2.1
2.3
U
4.6
0.181
L3
N
L2
L5
L6
M
1
2
3
L1
L4
P025C
5/6
®
STW16NA40-STH16NA40FI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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6/6
®
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